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Avila University - ARABIC - Arab120
Avila University - ARABIC - Arab120
Avila University - ARABIC - Arab120
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Avila University - ARABIC - Arab120
Avila University - ARABIC - Arab120
Avila University - ARABIC - Arab120
Avila University - ARABIC - Arab120
Avila University - ARABIC - Arab120
Avila University - ARABIC - Arab120
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Avila University - ARABIC - Arab120
Avila University - ARABIC - Arab120
Avila University - ARABIC - Arab120
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Avila University - ARABIC - Arab120
Avila University - ARABIC - Arab120
Avila University - ARABIC - Arab120
Avila University - ARABIC - Arab120
Avila University - ARABIC - Arab120
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Cornell - ECE - 5360
ECE 407: Physics of Semiconductors and NanostructuresK M KECE 407 Spring 2009 Farhan Rana Cornell UniversityECE 407: Physics of Semiconductors and NanostructuresInstructor: Farhan Rana Office: PH316 Email: fr37@cornell.edu Syllabus: The c
Cornell - ECE - 4070
Handout 2 Sommerfeld Model for Metals Free Fermion GasIn this lecture you will learn: Sommerfeld theory of metalsArnold Sommerfeld (1868-1951)ECE 407 Spring 2009 Farhan Rana Cornell UniversityProblems with the Drude Theory Does not say
Cornell - ECE - 4070
Handout 3 Free Electron Gas in 2D and 1DIn this lecture you will learn: Free electron gas in two dimensions and in one dimensionECE 407 Spring 2009 Farhan Rana Cornell UniversityElectron Gases in 2D In several physical systems electron ar
Cornell - ECE - 4070
Handout 4 Lattices in 1D, 2D, and 3DIn this lecture you will learn: Bravais lattices Primitive lattice vectors Unit cells and primitive cells Lattices with basis and basis vectors August Bravais (1811-1863)ECE 407 Spring 2009 Farhan Rana
Cornell - ECE - 4070
Handout 5 The Reciprocal LatticeIn this lecture you will learn: Fourier transforms of lattices The reciprocal lattice Brillouin Zones X-ray diffraction Fourier transforms of lattice periodic functionsECE 407 Spring 2009 Farhan Rana Corne
Cornell - ECE - 4070
Handout 6 Electrons in Periodic PotentialsIn this lecture you will learn: Blochs theorem and Bloch functions Electron Bragg scattering and opening of bandgaps Free electron bands and zone folding Energy bands in 1D, 2D, and 3D latticesECE 40
Cornell - ECE - 4070
Handout 7 Properties of Bloch Functions and Electron Statistics in Energy BandsIn this lecture you will learn:Energy Properties of Bloch functions Periodic boundary conditions for Bloch functions Density of states in k-space Electron occupatio
Cornell - ECE - 4070
Handout 8 Linear Combination of Atomic Orbitals (LCAO)In this lecture you will learn: H An approach to energy states in molecules based on the linear combination of atomic orbitalsH HC HECE 407 Spring 2009 Farhan Rana Cornell University
Cornell - ECE - 4070
Handout 9 Application of LCAO to Energy Bands in Solids and the Tight Binding MethodIn this lecture you will learn: An approach to energy bands in solids using LCAO and the tight binding methodEnergyEs4VssaakECE 407 Spring 2009
Cornell - ECE - 4070
Handout 10 The Tight Binding Method (Contd)In this lecture you will learn: The tight binding method (contd) The -bands in conjugated hydrocarbonsEnergyEs4VssaakECE 407 Spring 2009 Farhan Rana Cornell UniversityTight Binding
Cornell - ECE - 4070
Handout 11 Energy Bands in Graphene: Tight Binding and the Nearly Free Electron ApproachIn this lecture you will learn: Energy The tight binding method (contd) The -bands in grapheneFBZECE 407 Spring 2009 Farhan Rana Cornell UniversityGr
Cornell - ECE - 4070
Handout 12 Energy Bands in Group IV and III-V SemiconductorsIn this lecture you will learn: The tight binding method (contd) The energy bands in group IV and group III-V semiconductors with FCC lattice structureECE 407 Spring 2009 Farhan Ran
Cornell - ECE - 4070
Handout 13 Properties of Electrons in Energy BandsIn this lecture you will learn: Properties of Bloch functions Average momentum and velocity of electrons in energy bands Energy band dispersion near band extrema Effective mass tensor Crystal
Cornell - ECE - 4070
Handout 14 Statistics of Electrons in Energy BandsIn this lecture you will learn:ECE 407 Spring 2009 Farhan Rana Cornell UniversityExample: Electron Statistics in GaAs - Conduction BandConsider the conduction band of GaAs near the band botto
Cornell - ECE - 4070
Handout 15 Dynamics of Electrons in Energy BandsIn this lecture you will learn: The behavior of electrons in energy bands subjected to uniform electric fields The dynamical equation for the crystal momentum The effective mass tensor and inertia
Cornell - ECE - 4070
Handout 16 Conductivity of Electrons in Energy BandsIn this lecture you will learn: Inversion symmetry of energy bands The conductivity of electrons in energy bands The electron-hole transformation The conductivity tensor Examples Bloch osci
Cornell - ECE - 4070
Handout 17 Lattice Waves (Phonons) in a 1D Crystal: Monoatomic Basis and Diatomic BasisIn this lecture you will learn: Equilibrium bond lengths Atomic motion in lattices Lattice waves (phonons) in a 1D crystal with a monoatomic basis Lattice wa
Cornell - ECE - 4070
Handout 18 Lattice Waves (Phonons) in 2D Crystals: Monoatomic Basis and Diatomic BasisIn this lecture you will learn: Lattice waves (phonons) in a 2D crystal with a monoatomic basis Lattice waves (phonons) in a 2D crystal with a diatomic basis D
Cornell - ECE - 4070
Handout 19 Lattice Waves (Phonons) in 3D Crystals Group IV and Group III-V Semiconductors and Macroscopic Models of Acoustic Phonons in SolidsIn this lecture you will learn: Lattice waves (phonons) in 3D crystals Phonon bands in group IV and grou
Cornell - ECE - 4070
Handout 20 Quantization of Lattice Waves: From Lattice Waves to PhononsIn this lecture you will learn: Simple harmonic oscillator in quantum mechanics Classical and quantum descriptions of lattice wave modes Phonons what are they?ECE 407 Spr
Cornell - ECE - 4070
Department of Electrical and Computer Engineering, Cornell University ECE 407: Physics of Semiconductor and Nanostructures Spring 2009 Homework 1 Due on Jan. 27, 2009 at 5:00 PMSuggested Readings:a) Revise Fourier transforms from your favorite boo
Cornell - ECE - 4070
Department of Electrical and Computer Engineering, Cornell University ECE 407: Physics of Semiconductor and Nanostructures Spring 2009 Homework 2 Due on Feb. 03, 2009 at 5:00 PMSuggested Readings:a) Lecture notes b) Chapter 1 and Chapter 2 in Kitt
Cornell - ECE - 4070
Department of Electrical and Computer Engineering, Cornell University ECE 407: Physics of Semiconductor and Nanostructures Spring 2009 Homework 3 ` Due on Feb. 10, 2009 at 5:00 PMSuggested Readings:a) Lecture notes b) Chapter 2 in Kittel (Introduc
Cornell - ECE - 4070
Department of Electrical and Computer Engineering, Cornell University ECE 407: Physics of Semiconductor and Nanostructures Spring 2009 Homework 4 ` Due on Feb. 17, 2009 at 5:00 PMSuggested Readings:a) Lecture notesProblem 4.1 (1D lattice)Consid
Cornell - ECE - 4070
ECE407 Homework 4 Solutions (By Farhan Rana) Problem 4.1 (1D lattice)a) See plot below.a) V1=0.2 eV and V2 = 0.0 eVb) The size of the bandgap that opens at ka= is approximately 0.4 eV which equals 2V1 as predicted by the nearly free electron mode
Cornell - ECE - 4070
Department of Electrical and Computer Engineering, Cornell University ECE 407: Physics of Semiconductor and Nanostructures Spring 2009 Homework 5 ` Due on Feb. 24, 2009 at 5:00 PMSuggested Readings:a) Lecture notesProblem 5.1 (1D lattice energy
Cornell - ECE - 4070
ECE407 Homework 4 Solutions (By Farhan Rana) Problem 5.1 (1D lattice energy bands outside the FBZ)a) Lesson: The lesson is that if one chooses a value of the wavevector outside the FBZ for numerical solution then one does not obtain any new energy
Cornell - ECE - 4070
Department of Electrical and Computer Engineering, Cornell University ECE 407: Physics of Semiconductor and Nanostructures Spring 2009 Homework 6 ` Due on March 10, 2009 at 5:00 PMSuggested Readings:a) Lecture notesProblem 6.1 (Energy bands in G
Cornell - ECE - 4070
Department of Electrical and Computer Engineering, Cornell University ECE 407: Physics of Semiconductor and Nanostructures Spring 2009 Homework 7 ` Due on March 24, 2009 at 5:00 PMSuggested Readings:a) Lecture notes b) Start homework early.Probl
Cornell - ECE - 4070
ECE 407: Homework 7 Solutions (By Farhan Rana) Problem 7.1a) The answer follows from elementary vector calculus result that that the gradient of any function is perpendicular to the surface of constant value of the function. In the present case, the
Cornell - ECE - 4070
Department of Electrical and Computer Engineering, Cornell University ECE 407: Physics of Semiconductor and Nanostructures Spring 2009 Homework 8 Due on March 31, 2009 at 5:00 PMSuggested Readings:a) Lecture notesProblem 8.1: (Motion in magnetic
Cornell - ECE - 4070
Department of Electrical and Computer Engineering, Cornell University ECE 407: Physics of Semiconductor and Nanostructures Spring 2009 Homework 9 Due on April 7, 2009 at 5:00 PMSuggested Readings:a) Lecture notesProblem 9.1: (Phonons bands in gr
Cornell - ECE - 4070
Department of Electrical and Computer Engineering, Cornell University ECE 407: Physics of Semiconductor and Nanostructures Spring 2009 Exam 1 ` Feb. 26, 2009INSTRUCTIONS: Every problem must be done in the blue booklet Only work done on the blue e
Cornell - ECE - 4070
ECE407 Exam 1 Solutions (By Farhan Rana) Problem 1 (2D lattice) 30 pointsyaxr a1 r a2aA B Ca 2aaa) Note that the B atoms (or the C atoms) form a centered rectangular Bravais lattice. The primitive r r a a a 2 = ax y vectors ar
Cornell - ECE - 5360
5360 Final Take Home Exam-Version 1For the final exam your take home problem is to design a Si Based Radio isotope battery. The general structure is shown in figure 1. The battery consists of a radioisotope source and a thin P+N junction to convert
Cornell - ECE - 5360
5360 Exam I Problems and Solutions1. (15pts) MOS devices have been scaled from minium dimensions of .5-1 micron down to dimensions of 450 angstroms. Discuss the major technology issues that needed and it many ways have been addressed in the unit pr
Cornell - ECE - 5360
Important topics and ideasI. General semiconductor and devices physics a. Understanding of semiconductor properties i. Band representation ii. Conductivity 1. Measurement of conductivity 2. Measurement of doping iii. Electron transport b. Understand
Cornell - ECE - 5360
Practice Exam and Solutions1. Lithography often has to be done over underlying topography on a silicon chip. This can result in variations in the resist thickness as the underlying topography goes up and down. This can sometimes cause some parts of
Cornell - ECE - 5360
5360 NanofabricationReview of basic semiconductor concepts1 Semiconductors are the class of material where the conductivity of the material can be controlled to vary a large orders of magnitude. Elemental semiconductor: Si, Ge Compound semicon
Cornell - ECE - 5360
Doping Diffusion, Implantation and AnnealingIntroduction Dopant atoms move through Si at significant rates at high temperaturesdiffusion Useful for moving dopants from surface to desired depth Diffusion is a limitation in design of shallow j