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handout16 Cornell ECE 4070
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  • Title: handout16
  • Type: Notes
  • School: Cornell
  • Course: ECE 4070
  • Term: Spring

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Handout 16 Conductivity of Electrons in Energy Bands In this lecture you will learn: Inversion symmetry of energy bands The conductivity of electrons in energy bands The electron-hole transformation The conductivity tensor Examples Bloch oscillations ECE 407 Spring 2009 Farhan Rana Cornell University Inversion Symmetry of Energy Bands - I Recall that a Bloch function can be written as: r r n,k (r ) = e i k . r un,k (r ) r rr r Where the periodic part satisfied a Schrodinger-like equation: r r P2 P r h 2k 2 r r r r r r + . hk + + V r un ,k (r ) = E n k un,k (r ) 2m m 2m r r Now let k go to k in the above equation: r r P2 P r h2k 2 r r r r r r . hk + + V r un , k (r ) = E n k un, k (r ) 2m m 2m () () (1) () () And then take the complex conjugate of the whole equation to get: r r P2 P r h 2k 2 r r rr rr + . hk + + V r u * n , k (r ) = E n k u * n , k (r ) 2m m 2m r rr r u * n , k (r ) = un ,k (r ) Comparing (1) and (2) we get the results: r r En k = En k () () (1) () () ECE 407 Spring 2009 Farhan Rana Cornell University 1 Inversion Symmetry of Energy Bands - II r rr r u * n , k (r ) = un ,k (r ) One can also write: r * n, k (r ) = n,k (r ) r r r En k = En k () () () Energy r r r r En k = En k () Recall that: Now let k go to k in the above equation: r r r rr 1r v n k = k En k h () () () () () a r r r 1 r v n k = k En k h r 1r = k En k h r 1r = k En k h rr = v n k r r rr v n k = v n k () () () () kx a ECE 407 Spring 2009 Farhan Rana Cornell University Current Density for Energy Bands In Drude model, the electron current density was given as: Energy r r J = n ( e ) v For a free electron gas the current density was given as: r r r rr r rr 2 d 3k J = ( e ) rf k v k = 2 e fk vk 3 V all k (2 ) ()() ()() Now we want to find the current density due to electrons in energy bands The current density due to electrons in the n-th band can be written in a manner similar to the free-electron case: a kx a r rr r 2 J n = ( e ) r fn k v n k V k in FBZ r rr r d 3k = 2 e f k vn k 3n FBZ (2 ) () () () () ECE 407 Spring 2009 Farhan Rana Cornell University 2 Current Density for a Completely Filled or Empty Bands Consider a completely filled band for which fn k = 1 for r all k in FBZ: () r Energy r J n = 2 e r d 3k FBZ (2 ) 3 rr r fn k v n k = 2 e () () r d 3k FBZ (2 ) 3 rr vn k = 0 Ef () where I have used the fact: r r rr v n k = v n k () () Completely filled bands do not contribute to electrical current or to electrical conductivity Of course, if fn k = 0 for all k in FBZ: () r r r J n = 2 e r d 3k 3 FBZ (2 ) rr r fn k v n k = 0 () () a kx a Completely empty bands do not contribute to electrical current or to electrical conductivity Only partially filled bands contribute to electrical current and to electrical conductivity ECE 407 Spring 2009 Farhan Rana Cornell University Current Density and Electron-Hole Transformation Consider the expression for the current density: r J n = 2 e = 2e r d 3k FBZ r d 3k (2 ) 3 f 3n r (k ) v n (k ) r r (1) 0 r r rrr d 3k r r d 3k = 2 e 1 fn k v n k vn k + 2 e 3 3 FBZ (2 ) FBZ (2 ) r 3 rrr dk = +2 e 1 fn k v n k (2 )3 FBZ FBZ (2 ) r rr [1 fn (k ) 1] v n (k ) () [ ( )] ( ) (2) [ ( )] ( ) The final result implies that since the current density of a filled band is zero, the current density for any band can always be expressed in two ways: a) As an integral over all the occupied states assuming negatively charged particles (as in (1) above) b) As an integral over all the unoccupied states assuming positively charged particles (as in (2) above) ECE 407 Spring 2009 Farhan Rana Cornell University 3 Current Density and Electron-Hole Transformation Consider the current density for a completely filled band with just r one missing electron with wavevector k ' and spin up, as shown. The Electron Choice: The current density is given by: 1 r rr r 1 J n = 2 e r fn k v n k V k in FBZ r 1 = e vn k' V r 1 = e vn k' V Energy r ko r k () () r k' r k' () () The Hole Choice: The current density is given by: 1 r rrr 1 Jn = 2 e r 1 fn k v n k V k in FBZ r 1 = e vn k' V [ ( )] ( ) () ECE 407 Spring 2009 Farhan Rana Cornell University Metals, Semiconductors, and Insulators Materials can be classified into three main categories w.r.t. their electrical properties: Metals: In metals, the highest filled band is partially filled (usually half-filled) Semiconductors: In semiconductors, the highest filled band is completely filled (at least at zero temperature) Insulators: Insulators are like semiconductors but usually have a much larger bandgap Energy Energy Energy Ef Ef Ef kx FBZ Metal FBZ Semiconductor kx FBZ Insulator kx ECE 407 Spring 2009 Farhan Rana Cornell University 4 Inclusion of Scattering in the Dynamical Equation In the presence of a uniform electric field the crystal momentum satisfies the dynamical equation: Energy r r d hk (t ) = e E dt r r r r h k (t ) k d hk (t ) = e E dt r r The boundary condition is that: k (t = 0 ) = k Now we need to add the effect of electron scattering. As in the free-electron case, we assume that scattering adds damping: Conduction band [ ] hh valence band kx Note: the damping term ensures that when the field is turned off, the crystal momentum of the electron goes back to its original value Steady State Solution: h valence band Ex r r e r k (t = ) = k E h In the presence of an electric field, the crystal momentum of every electron is shifted by an equal amount that is determined by the scattering time and the field strength ECE 407 Spring 2009 Farhan Rana Cornell University electrical conductivity : Conduction Band Consider a solid in which the energy dispersion for conduction band near a band minimum is given by: Energy Conduction band r r h2 r r Ec k = E c k o + k ko 2 () () ( )T . M 1 . (k ko ) r r The velocity of electrons is: rr rr v c k = M 1 . h k ko The current density is: () ( ) r r r ko r k r Jc = 2 e r near ko r d 3k (2 ) f 3c r (k ) v c (k ) In equilibrium, for every state with crystal momentum k ko that is occupied, the rr state k ko is also occupied and these two states have opposite velocities. ( ) ( r r ) Therefore in equilibrium: r Jc = 2 e r near ko r d 3k (2 ) f 3c r (k ) v c (k ) = 0 r r ECE 407 Spring 2009 Farhan Rana Cornell University 5 electrical conductivity : Conduction Band Now assume that an electric field is present that shifts the crystal momentum of all electrons: Conduction band Energy ky r fc k () r ko r r e r k (t = ) = k E h kx e r E h ky r ko r ko kx r E r k r E = Ex x Electron distribution in k-space when E-field is zero Distribution function: fc k () r Electron distribution is shifted in k-space when E-field is not zero Distribution function: fc k + r e r E h Since the wavevector of each electron is shifted by the same amount in the presence of the E-field, the net effect in k-space is that the entire electron distribution is shifted as shown ECE 407 Spring 2009 Farhan Rana Cornell University electrical conductivity : Conduction Band Current Density: r Jc = 2 e r near ko r d 3k r e r r r fc k + E vc k h (2 )3 r d 3k () e r E h ky r E = Ex x r ko Do a shift in the integration variable: r Jc = 2 e r Jc = 2 e r near ko (2 )3 r d 3k r r r e r fc k v c k E h () () kx r e r r r f k M 1 . h k ko E r 3c h near ko (2 ) r r r v d 3k Jc = e 2 2 f k M 1 . E r 3c near ko (2 ) r 2 1 v Jc = n e M . E r = .E r e r fc k + E h () Where the conductivity is now a tensor given by: = n e 2 M 1 ECE 407 Spring 2009 Farhan Rana Cornell University 6 electrical conductivity Example: Conduction Band of GaAs Consider the conduction band of GaAs near the -point: 1 me M 1 = 0 0 This implies: 0 1 me 0 0 0 1 me Isotropic! r v Jc = n e 2 M 1 . E J x ,c 2 J y ,c = n e J z ,c = 1 me 0 0 0 1 me 0 0 0 1 me E x E y Ez E x r n e 2 Ey = E me Ez = n e 2 me ECE 407 Spring 2009 Farhan Rana Cornell University electrical conductivity Example: Conduction Band of Silicon In Silicon there are six conduction band minima (valleys) that occur along the six -X directions. For the one that occurs along the -X(2 /a,0,0) direction: r 2 ko = 0.85 ,0,0 a M 1 0 1 ml 1 mt = 0 0 0 0 0 1 mt Not isotropic! m = 0.92 m mt = 0.19 m This implies that for this valley: r v n Jc = e 2 M 1 . E 6 J x ,c 0 1 ml n2 1 mt J y ,c = 6 e 0 J z ,c 0 0 0 0 1 mt E x E y Ez The factor of 6 is there because only 1/6th of the total conduction electron density in Silicon is in one valley ECE 407 Spring 2009 Farhan Rana Cornell University 7 electrical conductivity Example: Conduction Band of Silicon To find the conductivity tensor for Silicon one needs to sum over the current density contributions from all six valleys: J x ,c n2 J y ,c = 6 e J z ,c = 2 ml + 4 mt 0 0 0 2 ml + 4 mt 0 0 0 2 ml + 4 mt E x E y Ez Isotropic! E x r n e 2 E = E y me Ez 1 1 1 2 = Conductivity effective mass = + me 3 ml mt After adding the current density contributions from all six valleys, the resulting conductivity tensor in Silicon is isotropic and described by a conductivity effective mass ECE 407 Spring 2009 Farhan Rana Cornell University electrical conductivity : Valence Band Consider a solid in which the energy dispersion for valence band near a band maximum is given by: Energy r r h2 r r Ev k = Ev ko + k ko 2 () () ( )T rr . M 1 . k ko ( ) Valence band r ko r k The velocity of electrons is: rr rr v v k = M 1 . h k ko r d 3k () ( ) The current density is (using the electron-hole transformation): r Jv = 2 e r near ko (2 ) 3 rr r fv k v v k = 2 e () () r d 3k r near ko (2 ) 3 rrr [1 fv (k )] vv (k ) In equilibrium, for every state with crystal momentum k ko that is unoccupied, rr the state k ko is also unoccupied and these two states have opposite velocities. ( ) ( r r ) Therefore in equilibrium: r Jv = 2 e r near ko r d 3k (2 ) 3 rrr [1 fv (k )] vv (k ) = 0 ECE 407 Spring 2009 Farhan Rana Cornell University 8 electrical conductivity : Valence Band Now assume that an electric field is present that shifts the crystal momentum of all electrons in the valence band: Energy r ko r k r E ky r 1 fv k () r ko r r e r k (t = ) = k E h e r E h ky Valence band kx r E = Ex x r ko kx Hole distribution in k-space when E-field is zero Distribution function: 1 fv k () r Hole distribution is shifted in k-space when E-field is not zero Distribution function: 1 fv k + r e r E h Since the wavevector of each electron is shifted by the same amount in the presence of the E-field, the net effect in k-space is that the entire electron distribution (and hole distribution) is shifted as shown ECE 407 Spring 2009 Farhan Rana Cornell University electrical conductivity : Valence Band Current Density: r Jv = 2 e r dk r e r r r 1 fv k + E vv k r 3 h near ko (2 ) 3 () e r E h ky r E = Ex x r ko Do a shift in the integration variable: r Jv = 2 e r Jv = 2 e r near ko r near ko r d 3k (2 )3 r d 3k [ r r r e r 1 fv k v v k E h ( )] kx (2 ) r rr r [1 fv (k )] M 1 . h k ko eh E 3 r e r E 1 fv k + h r r v Jv = e 2 2 r 1 fv k M 1 . E 3 near k o (2 ) r 2 1 v Jv = p e M . E r = .E r d 3k [ ( )] Where the conductivity is now a tensor given by: = p e 2 M 1 ECE 407 Spring 2009 Farhan Rana Cornell University 9 electrical conductivity Example: Heavy-Hole Band of GaAs Consider the heavy-hole band of GaAs near the -point: 1 mhh M 1 = 0 0 This implies: 0 1 mhh 0 0 0 1 mhh Isotropic! r v J hh = phh e 2 M 1 . E J x ,hh 1 mhh 2 J y ,hh = phh e 0 J z ,hh 0 E x r p e 2 Ey = E = hh mhh Ez = phh e 2 mhh 0 1 mhh 0 0 0 1 mhh E x E y Ez ECE 407 Spring 2009 Farhan Rana Cornell University electrical conductivity Example: Light-Hole Band of GaAs Consider the light-hole band of GaAs near the -point: 1 mlh M 1 = 0 0 This implies: 0 1 mlh 0 0 0 1 mlh Isotropic! r r v J lh = plh e 2 M 1 . E = E = plh e 2 mlh The total valence band conductivity of GaAs can be written as the sum of the contributions from the heavy-hole and the light-hole bands: = phh e 2 plh e 2 + mhh mlh ECE 407 Spring 2009 Farhan Rana Cornell University 10 The Case of No Scattering: Bloch Oscillations Consider an electron in a 1D crystal subjected to a uniform electric field. The energy band dispersion and velocity are: E n (k x ) = E s 2 Vss cos(k x a ) v n (k x ) = Energy 1 dE n (k x ) = 2a Vss sin(k x a ) h dk x In the absence of scattering, the crystal momentum satisfies the dynamical equation: The time-dependent velocity of the electron is: d hk x (t ) = eEo dt eEo k x (t ) = t + k x (t = 0 ) h a FBZ kx a v n (t ) = 2a Vss sin(k x (t )a ) e a Eo = 2a Vss sin t + k x (t = 0 )a h Periodic! ECE 407 Spring 2009 Farhan Rana Cornell University r E = Eo x The Case of No Scattering: Bloch Oscillations A periodic velocity means that the electron motion in real space is also periodic: dx (t ) e a Eo t + k x (t = 0 )a = v n (t ) = 2a Vss sin dt h T dx o (t ) dt = x (t = T ) x (t = 0 ) = 0 where the period T is: dt T= 2 h e a Eo Reciprocal space: a kx t =0 a a T t= 4 kx a a T t= 2 kx a a 3T t= 4 kx a a kx t =T a Real space: t =0 t =T 0 T 4 3T t= 4 t= ECE 407 Spring 2009 Farhan Rana Cornell University t= T 2 x 11 The Phenomenology Of Transport: Basic Equations The presence of external fields, and scattering, the following relations work for electrons in any energy band near the band edge: r r r r r r r h k (t ) k d hk (t ) = e E ev n k B dt r r r r v n k (t ) = M 1 . h k (t ) ko r r r rr r rrr d 3k d 3k J n (t ) = 2 e fn k v n k (t ) = +2 e 1 fn k v n k (t ) 3 3 FBZ (2 ) FBZ (2 ) () [ ] ( ) ( ) () ( ) [ ( )] ( ) The first two can also be written as: M. rr rr rr r r M . v n k (t ) v n k rr d v n k (t ) = e E ev n k (t ) B dt ( ) ( ) [( ) ( )] Problem: One needs simple models for current transport so that non-specialists, like circuit designers, can understand devices and circuits without having to understand energy bands ECE 407 Spring 2009 Farhan Rana Cornell University The Phenomenology Of Transport: Electrons in Conduction Band We define the drift velocity for the electrons in conduction band as: r rr rr v e (t ) = v c k (t ) v c k ( ) () (1) The drift velocity is independent of wavevector and satisfies the equation: M. r r r r M . v e (t ) r d v e (t ) = e E ev e (t ) B dt Once the drift velocity is calculated, the electron current density is: r Je (t ) = 2 e r d 3k FBZ (2 ) f 3c r (k ) v c (k (t )) = n ( e ) ve (t ) r r (2) Electrons in conduction band are to be thought of as negatively charged particles with a mass replaced by a mass tensor and that satisfy (1) and (2). In case of multiple conduction band minima, as in silicon and germanium, individual contributions of each minima (or valley) to the current density are calculated separately and added in the end. ECE 407 Spring 2009 Farhan Rana Cornell University 12 The Phenomenology Of Transport: Holes in Valence Band We define the drift velocity for the holes in valence band as: r rr rr v h (t ) = v v k (t ) v v k ( ) () (1) The drift velocity is independent of wavevector and satisfies the equation: ( M ) . r r r r ( M ) . v h (t ) r d v h (t ) = + e E + ev h (t ) B dt Where realizing that the inverse effective mass tensor will have negative diagonal terms for valence band, I have multiplied throughout by a negative sign, with the result that the charge -e becomes +e Once the drift velocity is calculated, the hole current density is: r J h (t ) = +2 e r d 3k FBZ (2 ) 3 rrr [1 fv (k )] vv (k (t )) = p (+ e ) v h (t ) (2) Holes in valence band are to be thought of as positively charged particles with a mass replaced by a mass tensor and that satisfy (1) and (2). In case of degenerate valence band maxima, the heavy and light hole current density contributions are calculated separately and added in the end. ECE 407 Spring 2009 Farhan Rana Cornell University 13

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handout17
Path: Cornell >> ECE >> 4070 Spring, 2008

Description: Handout 17 Lattice Waves (Phonons) in a 1D Crystal: Monoatomic Basis and Diatomic Basis In this lecture you will learn: Equilibrium bond lengths Atomic motion in lattices Lattice waves (phonons) in a 1D crystal with a monoatomic basis Lattice wa...
handout18
Path: Cornell >> ECE >> 4070 Spring, 2008
Description: Handout 18 Lattice Waves (Phonons) in 2D Crystals: Monoatomic Basis and Diatomic Basis In this lecture you will learn: Lattice waves (phonons) in a 2D crystal with a monoatomic basis Lattice waves (phonons) in a 2D crystal with a diatomic basis D...
handout19
Path: Cornell >> ECE >> 4070 Spring, 2008
Description: Handout 19 Lattice Waves (Phonons) in 3D Crystals Group IV and Group III-V Semiconductors and Macroscopic Models of Acoustic Phonons in Solids In this lecture you will learn: Lattice waves (phonons) in 3D crystals Phonon bands in group IV and grou...
handout20
Path: Cornell >> ECE >> 4070 Spring, 2008
Description: Handout 20 Quantization of Lattice Waves: From Lattice Waves to Phonons In this lecture you will learn: Simple harmonic oscillator in quantum mechanics Classical and quantum descriptions of lattice wave modes Phonons what are they? ECE 407 Spr...
homework1
Path: Cornell >> ECE >> 4070 Spring, 2008
Description: Department of Electrical and Computer Engineering, Cornell University ECE 407: Physics of Semiconductor and Nanostructures Spring 2009 Homework 1 Due on Jan. 27, 2009 at 5:00 PM Suggested Readings: a) Revise Fourier transforms from your favorite boo...
homework1sol
Path: Cornell >> ECE >> 4070 Spring, 2008
Description: ...
homework2
Path: Cornell >> ECE >> 4070 Spring, 2008
Description: Department of Electrical and Computer Engineering, Cornell University ECE 407: Physics of Semiconductor and Nanostructures Spring 2009 Homework 2 Due on Feb. 03, 2009 at 5:00 PM Suggested Readings: a) Lecture notes b) Chapter 1 and Chapter 2 in Kitt...
homework2sol
Path: Cornell >> ECE >> 4070 Spring, 2008
Description: ...
homework3
Path: Cornell >> ECE >> 4070 Spring, 2008
Description: Department of Electrical and Computer Engineering, Cornell University ECE 407: Physics of Semiconductor and Nanostructures Spring 2009 Homework 3 ` Due on Feb. 10, 2009 at 5:00 PM Suggested Readings: a) Lecture notes b) Chapter 2 in Kittel (Introduc...
homework3sol
Path: Cornell >> ECE >> 4070 Spring, 2008
Description: ...
homework4
Path: Cornell >> ECE >> 4070 Spring, 2008
Description: Department of Electrical and Computer Engineering, Cornell University ECE 407: Physics of Semiconductor and Nanostructures Spring 2009 Homework 4 ` Due on Feb. 17, 2009 at 5:00 PM Suggested Readings: a) Lecture notes Problem 4.1 (1D lattice) Consid...
homework4sol
Path: Cornell >> ECE >> 4070 Spring, 2008
Description: ECE407 Homework 4 Solutions (By Farhan Rana) Problem 4.1 (1D lattice) a) See plot below. a) V1=0.2 eV and V2 = 0.0 eV b) The size of the bandgap that opens at ka= is approximately 0.4 eV which equals 2V1 as predicted by the nearly free electron mode...
homework5
Path: Cornell >> ECE >> 4070 Spring, 2008
Description: Department of Electrical and Computer Engineering, Cornell University ECE 407: Physics of Semiconductor and Nanostructures Spring 2009 Homework 5 ` Due on Feb. 24, 2009 at 5:00 PM Suggested Readings: a) Lecture notes Problem 5.1 (1D lattice energy ...
homework5sol
Path: Cornell >> ECE >> 4070 Spring, 2008
Description: ECE407 Homework 4 Solutions (By Farhan Rana) Problem 5.1 (1D lattice energy bands outside the FBZ) a) Lesson: The lesson is that if one chooses a value of the wavevector outside the FBZ for numerical solution then one does not obtain any new energy ...
homework6
Path: Cornell >> ECE >> 4070 Spring, 2008
Description: Department of Electrical and Computer Engineering, Cornell University ECE 407: Physics of Semiconductor and Nanostructures Spring 2009 Homework 6 ` Due on March 10, 2009 at 5:00 PM Suggested Readings: a) Lecture notes Problem 6.1 (Energy bands in G...
homework6sol
Path: Cornell >> ECE >> 4070 Spring, 2008
Description: ...
homework7
Path: Cornell >> ECE >> 4070 Spring, 2008
Description: Department of Electrical and Computer Engineering, Cornell University ECE 407: Physics of Semiconductor and Nanostructures Spring 2009 Homework 7 ` Due on March 24, 2009 at 5:00 PM Suggested Readings: a) Lecture notes b) Start homework early. Probl...
homework7sol
Path: Cornell >> ECE >> 4070 Spring, 2008
Description: ECE 407: Homework 7 Solutions (By Farhan Rana) Problem 7.1 a) The answer follows from elementary vector calculus result that that the gradient of any function is perpendicular to the surface of constant value of the function. In the present case, the...
homework8
Path: Cornell >> ECE >> 4070 Spring, 2008
Description: Department of Electrical and Computer Engineering, Cornell University ECE 407: Physics of Semiconductor and Nanostructures Spring 2009 Homework 8 Due on March 31, 2009 at 5:00 PM Suggested Readings: a) Lecture notes Problem 8.1: (Motion in magnetic...
homework9
Path: Cornell >> ECE >> 4070 Spring, 2008
Description: Department of Electrical and Computer Engineering, Cornell University ECE 407: Physics of Semiconductor and Nanostructures Spring 2009 Homework 9 Due on April 7, 2009 at 5:00 PM Suggested Readings: a) Lecture notes Problem 9.1: (Phonons bands in gr...
exam1
Path: Cornell >> ECE >> 4070 Spring, 2008
Description: Department of Electrical and Computer Engineering, Cornell University ECE 407: Physics of Semiconductor and Nanostructures Spring 2009 Exam 1 ` Feb. 26, 2009 INSTRUCTIONS: Every problem must be done in the blue booklet Only work done on the blue e...
exam1sol
Path: Cornell >> ECE >> 4070 Spring, 2008
Description: ECE407 Exam 1 Solutions (By Farhan Rana) Problem 1 (2D lattice) 30 points y a x r a1 r a2 a A B C a 2 a a a) Note that the B atoms (or the C atoms) form a centered rectangular Bravais lattice. The primitive r r a a a 2 = ax y vectors ar...
5360_Final_Exam_take_home
Path: Cornell >> ECE >> 5360 Fall, 2008
Description: 5360 Final Take Home Exam-Version 1 For the final exam your take home problem is to design a Si Based Radio isotope battery. The general structure is shown in figure 1. The battery consists of a radioisotope source and a thin P+N junction to convert ...
EXAM_I_Problems_and_solns
Path: Cornell >> ECE >> 5360 Fall, 2008
Description: 5360 Exam I Problems and Solutions 1. (15pts) MOS devices have been scaled from minium dimensions of .5-1 micron down to dimensions of 450 angstroms. Discuss the major technology issues that needed and it many ways have been addressed in the unit pr...
Important_topics_for_exam
Path: Cornell >> ECE >> 5360 Fall, 2008
Description: Important topics and ideas I. General semiconductor and devices physics a. Understanding of semiconductor properties i. Band representation ii. Conductivity 1. Measurement of conductivity 2. Measurement of doping iii. Electron transport b. Understand...
Practice_Exam_and_Solutions
Path: Cornell >> ECE >> 5360 Fall, 2008
Description: Practice Exam and Solutions 1. Lithography often has to be done over underlying topography on a silicon chip. This can result in variations in the resist thickness as the underlying topography goes up and down. This can sometimes cause some parts of ...
536_Lecture_2_Semiconductor_and_device_lectures_v1
Path: Cornell >> ECE >> 5360 Fall, 2008
Description: 5360 Nanofabrication Review of basic semiconductor concepts 1 Semiconductors are the class of material where the conductivity of the material can be controlled to vary a large orders of magnitude. Elemental semiconductor: Si, Ge Compound semicon...
ECE_5360_Diffusion_and_Ion_Implantation_mod
Path: Cornell >> ECE >> 5360 Fall, 2008
Description: Doping Diffusion, Implantation and Annealing Introduction Dopant atoms move through Si at significant rates at high temperatures diffusion Useful for moving dopants from surface to desired depth Diffusion is a limitation in design of shallow j...
ECE_5360_Lec_12_14_lithography
Path: Cornell >> ECE >> 5360 Fall, 2008
Description: Photo-Lithography ES174 Photonic and Electronic Device Laboratory Lecture # 7 Text Book: Jaeger, Chap. 2 Other Sources: Plummer Chap. 5 Tropical Cyclone Larry Mar. 19, 2006 ; 180 mph Harvard_Fabrication_ES174Si4.ppt 2006 2 Photolithography (A Sim...
ECEC_5360_Oxidation
Path: Cornell >> ECE >> 5360 Fall, 2008
Description: Oxidation ECE 5360 Use of Chemical Vapor Deposition Dielectrics and Insulators SiO2 Si3N4 Conductors Poly-Silicon (doped and undoped) Tungsten Copper Harvard_Fabrication_2+3.ppt 2006 2 Chemical Vapor Deposition (CVD) Atmospheric Pressure C...
ETCHING
Path: Cornell >> ECE >> 5360 Fall, 2008
Description: Transfer of Patterns: Wet and Dry Etching ES174 Photonic and Electronic Device Laboratory Lecture #8 Text Book: Plummer, Chap. 10 Other Sources: Jaeger, Chap. 2.2 Key Ideas mask material thin film being etched substrate Anisotropic/Directional Etch ...
Filmetrics_operating_instructions
Path: Cornell >> ECE >> 5360 Fall, 2008
Description: Instructions for the Filmetrics Spectroscopic Reflectometer Film Thickness Measurement system. 1. Turn on the Measurement Unit: Flip on the toggle switch on the main unit, and wait 5 minutes for the lamp to warm up. 2. Start the Software: On the comp...
Resist_spinning__exposure__and_development
Path: Cornell >> ECE >> 5360 Fall, 2008
Description: Resist Application 1. Place your wafer on the spinner chuck. Assure that you are running program 2, by pressing recipe, and then 2. Make sure the wafer is centered. 2. Press the green switch on the foot pedal to start your wafer spinning. 3. Spray th...
Sample_schematic_of_fabrication_process
Path: Cornell >> ECE >> 5360 Fall, 2008
Description: CVDdepositSi3N4layer Dryetch28mholesinSi3N4 KOHetchthroughSi Spindepositcollagenorcellulose ...
ECE5360_Lab_1
Path: Cornell >> ECE >> 5360 Fall, 2008
Description: ECE 5360, Fall 2008 Lab Session 1 Lab Safety/Chemical Handling, Wafer Prep, & Substrate Resistivity Pre-lab: Complete the Reading Assignment especially materials in chapter 3 of your text on the 4 point probe technique which appears in Section 3.4.1....
ECE_5360_Lab__3
Path: Cornell >> ECE >> 5360 Fall, 2008
Description: Lab # 3: Field Oxide Characterization, Patterning & Etching In this lab, you will receive your wafers back after they have been oxidized in the wet furnace in CNF. You will characterize the oxide by using a spectrophotometer. This will yield the oxid...
ECE_5360_lab__4
Path: Cornell >> ECE >> 5360 Fall, 2008
Description: Lab # 4 Patterning the Source/Drain Ion Implant In this lab, you will receive your wafers back in the same condition as you left them in Lab # 3. You will then apply photoresist on top of your patterned Field Oxide using the spinner and then pattern ...
ECE_5360_Lab__5
Path: Cornell >> ECE >> 5360 Fall, 2008
Description: Lab # 5 Patterning the Source/Drain Contact Windows In this lab, you will receive your wafers back after a series of process steps have been completed for you. Since lab #4, these wafers have undergone: i) ion implantation, ii) a resist strip in a re...
ECE_5360_lab__6
Path: Cornell >> ECE >> 5360 Fall, 2008
Description: Lab # 6: Sputter Deposition, Patterning and Annealing the Al Contacts In this lab, you will receive your wafers back with 3 process steps added after Lab #5. Recall that after Lab # 5, the contact holes were opened through the gate oxide. In the firs...
ECE_5360_Lab__7
Path: Cornell >> ECE >> 5360 Fall, 2008
Description: Lab #7 The Final Fabrication Step Today, you will complete the fabrication of the devices youve been working on all semester. In the second half of class, you will begin to measure the electrical properties of the devices youve made. You will finish...
ECE_5360_Lab__8
Path: Cornell >> ECE >> 5360 Fall, 2008
Description: Lab # 7.5/ 8 - Device Measurements Part I: Resistors, TLMs, Diodes, and MOSFETs Having completed your fabrication process with the final anneal earlier this afternoon, you will bring your wafers to a probe station in the Phillips Hall Semiconductor T...
ECE_5360_Lab__9
Path: Cornell >> ECE >> 5360 Fall, 2008
Description: Lab # 8 Device Measurements II CV on Diodes and MOS Capacitors In this lab, you will continue testing the MOS capacitors and diodes on your wafer using the probe station and the LCR Analyzer. A total of 2 probes are required: the LCR signal lead, a...
Format_for_Lab_reports
Path: Cornell >> ECE >> 5360 Fall, 2008
Description: Format for Lab reports-Version 1 This the format for your lab final report on which your lab grade will be based. 50% of the grade will be given for lab participation and the other 50% based on the accuracy style and readability of this report Abstr...
Lab__2_questions
Path: Cornell >> ECE >> 5360 Fall, 2008
Description: Lab Analysis: 1. Uniformity of Field Oxide: Determine the thickness uniformity of the Field Oxide on your wafer based on your measurements at the 5 points. 2. Uniformity of Photoresist : Determine the thickness uniformity of the resist on your wafer ...
ECE5360_HW_5_and_6_soln
Path: Cornell >> ECE >> 5360 Fall, 2008
Description: November 29, 2006 ECE 536 Homework # 6 Solutions (Rev. 0) Fall 2006 1. Show that the ideality factor of a diode can be calculated from measured forward IV curve according to: kT q 1 = dI dV 1 I. (6.1) Starting with the diode equation which re...
ECE_536__Problem_Set_1
Path: Cornell >> ECE >> 5360 Fall, 2008
Description: ECE 536 Problem Set 1 Due Monday Sept. 29 1. Assuming dopant atoms are universally distributed in a silicon crystal, how far apart are these atoms when the doping concentration is (a) 1015cm-3 (b) 5x1020cm-3 2. Estimate the resistivity of pure silic...
ECE_536__Problem_Set_2
Path: Cornell >> ECE >> 5360 Fall, 2008
Description: ECE 536 Problem Set 2 Due Monday Oct. 6 1. Consider an abrupt P+N junction with Na=2x1018cm-3 and ND =1x1015cm-3. If the minority carrier lifetime is p=1x10-6sec. a) Calculate and graph the pn(x) for a long diode of length L=100um (boundary condition...
ECE_536__Problem_Set_3
Path: Cornell >> ECE >> 5360 Fall, 2008
Description: ECE 5360 Problem Set 3 Due Wednesday October 22 1. Your field oxidation process is carried out in the CNF using a furnace tube at 1 atm pressure of wet oxide (steam) at 1100C . Using the Deal Grove Model and the following expressions for the rate co...
ECE_5360_Homework_Set_7
Path: Cornell >> ECE >> 5360 Fall, 2008
Description: ECE 5360 Homework Set 7 Due Monday December 1, 2008 1. Show that the transconductance for the n channel MOSFET in saturation is given by : Also note that the tranconductance parameter is given by The measurement software produces both of these pl...
Problem_Set_4
Path: Cornell >> ECE >> 5360 Fall, 2008
Description: ECE 5360 Problem Set 4 Due Monday (Nov 3, 2008) 1. The structure shown below is implanted with oxygen using a 1 x 1018 cm-2 implant at 200 keV (RP = 0.35 m) . The left hand side is masked from the implant. Following the implant, a high temperature ...
Problem_Set_4_soln
Path: Cornell >> ECE >> 5360 Fall, 2008
Description: Problem Set 4 Soln 1. The structure shown below is implanted with oxygen using a 1 x 1018 cm-2 implant at 200 keV (RP = 0.35 m) . The left hand side is masked from the implant. Following the implant, a high temperature anneal is performed which for...
Problem_Set_5_and_6
Path: Cornell >> ECE >> 5360 Fall, 2008
Description: Due Wednesday November 19th 2008 ECE 5360 Problem Set 5 and 6 ...
Sol_set__2
Path: Cornell >> ECE >> 5360 Fall, 2008
Description: PD F-XChange PD F-XChange ! W N O y bu to k C lic m C lic k to bu y N O .c W w ! .d o w o .d o c u-tra c k c u-tra c k .c 1. Consider an abrupt P+N junction with Na=2x1018cm-3 and ND =1x1015cm-3. If the minority carrier lif...
Soln_3
Path: Cornell >> ECE >> 5360 Fall, 2008
Description: F-XChange PD w w w .d o c u-tra c k .c F-XChange PD w w w .d o c u-tra c k .c o o m m C lic C lic k k to to bu bu y y N O N O W W ! Soln set 3 1. Your field oxidation process is carried out in the CNF using a furnac...
Soln_HW_7
Path: Cornell >> ECE >> 5360 Fall, 2008
Description: Homework 7 Solutions 3. An experimental MIS (I=insulator) structure is fabricated by depositing Si 3N 4 (silicon nitride) on a silicon substrate. The nitride is deposited by directing a jet of silane and ammonia at the surface 3SiH 4 + 4NH3 Si 3N...
Soln_Set_1
Path: Cornell >> ECE >> 5360 Fall, 2008
Description: PD F-XChange PD F-XChange ! W N O y bu to k C lic m C lic k to bu y N O .c W w ! .d o w o .d o c u-tra c k c u-tra c k .c 1. Assuming dopant atoms are universally distributed in a silicon crystal, how far apart are these at...
X_credit_5_DSOC_1101
Path: Cornell >> DSOC >> 1101 Spring, 2009
Description: DSOC 1101 Spring 2009 Extra-Credit #5 Gender Discrimination Due in lecture on Wednesday, April 1, 2009 Efforts to combat sexual discrimination eventually led to the passage of Title IX of the Education Act Amendments of 1972. Title IX prohibits gen...
1020macroWk1
Path: Cornell >> DSOC >> 1101 Spring, 2009
Description: ECONOMICS 1020 SPRING 2008 MACROECONOMICS Instructor: Professor Bill Schulze 301 Warren Hall (wds3@cornell.edu) Lectures are Tuesdays and Thursdays 9:05 to 9:55 a.m. in Uris Hall Auditorium Text: Principles of Macroeconomics, Karl E. Case, Ray C. Fa...
1120macroWk2
Path: Cornell >> ECON >> 1120 Spring, 2009
Description: Current Policy Short Take: What is a Toxic Mortgage? AMY GOODMAN: Lionel Ouellette, you organize homeowners, tell us some of their stories. CHAPTER 3: Demand, Supply, and Market Equilibrium LIONEL OUELLETTE: One of our members, a Latina first-time ...
1120macroWk3
Path: Cornell >> ECON >> 1120 Spring, 2009
Description: INTRODUCTION TO MACROECONOMICS CHAPTER 5: Introduction to Macroeconomics microeconomics Examines the behavior of individual decision-making unitsbusiness rms and households. macroeconomics Deals with the economy as a whole. Macroeconomics focuses o...
1120macroWk4
Path: Cornell >> ECON >> 1120 Spring, 2009
Description: CHAPTER 7: Long-Run and Short-Run Concerns: Growth, Productivity, Unemployment, and Inflation LONG-RUN AND SHORT-RUN CONCERNS: GROWTH, PRODUCTIVITY, UNEMPLOYMENT, AND INFLATION output growth The growth rate of the output of the entire economy. per-...
1120macroWk5
Path: Cornell >> ECON >> 1120 Spring, 2009
Description: What causes stock market bubbles and what do you need to know about them? The 1990s bubble and 2000 crash in the stock market along with the Nobel Prize awarded to Kahneman and Smith has caused an increased interest in BEHAVIORAL FINANCE, which was...
1120macroWk6
Path: Cornell >> ECON >> 1120 Spring, 2009
Description: MODEL 2: THE GOVERNMENT AND FISCAL POLICY CHAPTER 9: The Government and Fiscal Policy scal policy The governments spending and taxing policies. For the time being we will ignore monetary policy The behavior of the Federal Reserve concerning the na...
1120MacroWk7
Path: Cornell >> ECON >> 1120 Spring, 2009
Description: MODEL 3: GOVERNMENT AND FISCAL POLICY CHAPTER 9: The Government and Fiscal Policy FIGURE 9.1 Adding Net Taxes (T) and Government Purchases (G) to the Circular Flow of Income 2007 Prentice Hall Business Publishing Principles of Economics 8e by Case...
1120macroWk8
Path: Cornell >> ECON >> 1120 Spring, 2009
Description: THE SUPPLY OF MONEY CHAPTER 10: The Money Supply and the Federal Reserve System WHAT IS MONEY? Money is anything that is generally accepted as a medium of exchange. A Means of Payment, or Medium of Exchange barter The direct exchange of goods and s...
1120macroWk9
Path: Cornell >> ECON >> 1120 Spring, 2009
Description: CHAPTER 12: Money, the Interest Rate, and Output: Analysis and Policy MONEY, THE INTEREST RATE, AND OUTPUT: Introduction to the I-S, L-M Model goods market The market in which goods and services are exchanged and in which the equilibrium level of ag...
Assignment_1
Path: Cornell >> DSOC >> 1101 Spring, 2009
Description: ...
Assignment_2
Path: Cornell >> DSOC >> 1101 Spring, 2009
Description: ...
Assignment_3
Path: Cornell >> DSOC >> 1101 Spring, 2009
Description: ...
BehavioraFinance
Path: Cornell >> ECON >> 1120 Spring, 2009
Description: Behavioral Finance The 1990s bubble and 2000 crash in the stock market along with the Nobel Prize awarded to Kahneman and Smith has caused an increased interest in BEHAVIORAL FINANCE, which was already one of the hottest areas in business. Vernon s...

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