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of Department Electrical and Computer Engineering, Cornell University ECE 407: Physics of Semiconductor and Nanostructures Spring 2009 Homework 5 ` Due on Feb. 24, 2009 at 5:00 PM Suggested Readings: a) Lecture notes Problem 5.1 (1D lattice energy bands outside the FBZ) In the last homework, in problem 4.1, you found the exact solution for an electron in a periodic 1D lattice. You will consider the same problem again here. Consider a 1D lattice of lattice constant a equal to 5 Angstroms. Suppose the potential has the form: 2 4 V (x ) = 2V1 cos x + 2V2 cos x a a Where V1 equals 0.3 eV and V2 also equals 0.3 eV. The exact solution for any wavevector k in the FBZ can be written as a superposition of plane waves in the form: k = Where: m = c k (Gm ) k + Gm = m = c (Gm ) 1 i (k + Gm ) x e L 2 a A good approximation to the exact solution can be obtained by terminating the series above at both ends, as follows: Gm = m k = m = N c k (Gm ) k + Gm N Where N is some large number, say 10. The way you hopefully solved the problem in homework 4 was to first choose a value of the wavevector k in the FBZ, then setup a matrix, and then find its three smallest eigenvalues. The question is what if one chooses a value of the wavevector k that is not in the FBZ? Would one end up with some new energy eigenvalues and new energy eigenfunctions? The goal of the problem is to explore this point. **If you are not confident of your answer in homework 4, you can download a matlab routine from the course website that will plot the first three energy bands in the FBZ** a) Choose values of the wavevector k between 3 a and + 3 a , and for each chosen value of wavevector k find the smallest three energy eigenvalues by repeating the same procedure as you followed in problem 4.1 the only difference being that now your range of wavevector values include higher order BZs. What do you find? How do the energy bands look like outside the first BZ? Do you think it makes sense to restrict the k values to the first BZ? Hand in your plots. 1 Problem 5.2 (Ethene (or Ethylene) molecule: LCAO) Two carbon atoms and four hydrogen atoms form an ethene molecule with the chemical formula C2H4. It is the most manufactured hydrocarbon in the world. The structure of the ethene molecule is shown below: H =120o C C H =120o H H a) Convince yourself that the 2p-orbitals on C atoms oriented out of the plane of the paper do not have a non-zero energy matrix element with any of the 1s-orbitals, or 2s-orbitals, or any of the 2p-orbitals that are in the plane of the paper. Explain why this is so. For parts (b) and (c) you can ignore the 2p-orbitals on C atoms that are oriented out of the plane of the paper. You are then left with 4 1s orbitals one on each H atom, 2 2s-orbitals one on each C-atom, and 4 2p-orbitals two on each C atom that are in the plane of the paper. What b) is the hybridization scheme (sp3 or sp2) for each C atom? c) Write an appropriate trial solution for the wavefunction of the electron using LCAO (remember to ignore the 2p-orbitals on C atoms that are oriented out of the plane of the paper). Use the result from part (b) to guide you. d) Using your solution in part (b), solve for the eigenenergies. Show all the eigenenergies and the corresponding degeneracies going from the atomic orbitals to the molecular orbitals in an energy level diagram. Use values of energy matrix elements given in the handouts (e.g. Vss , Vsp , etc). Now we will consider what the 2p-orbitals on C atoms oriented out of the plane of the paper do. They are going to form molecular orbitals of their own. e) Write an appropriate trial solution for the wavefunction of the electron using LCAO using only the 2porbitals on C atoms oriented out of the plane of the paper. f) Using your solution in part (e), solve for the eigenenergies. Show all the eigenenergies and the corresponding degeneracies going from the atomic orbitals to the molecular orbitals in an energy level diagram. Use values of energy matrix elements given in the handouts (e.g. Vss , Vsp , etc). What type of bond is made by the 2p-orbitals on C atoms oriented out of the plane of the paper (sigma or pi)? g) Combine your results from part (d) and part (f) and draw an energy level diagram that shows all the energies and the corresponding degeneracies going from the atomic orbitals to the molecular orbitals (and remember this time ALL atomic orbitals are being included). On the energy level diagram indicate (by black dots) the electron occupation of each molecular orbital (you have a total of 12 electrons participating in bonding). 2 Problem 5.3 (Energy bands for a simple cubic lattice) a a FBZ R ( /a, /a, /a) X ( /a, 0, 0) a Consider a 3D crystal with a simple cubic lattice of lattice constant a. At each lattice point there is an atom that has one s-orbital and three p-orbitals (px, py, and pz) that can participate in bonding and energy band formation. The orbitals and the corresponding energies are as follows: s (r ) r r px (r ) r py (r ) r pz (r ) Es Ep Ep Ep r a) Write a trial tight-binding wavefunction for the Bloch state with eigenvector k . b) Write down the matrix equation that results when the trial solution is plugged into the Schrodinger equation. Use values of energy matrix elements as given in the lecture handouts (e.g. Vss , Vsp , etc). c) Find the energies at the zone center ( -point) for all the energy bands, and remark of which atomic orbitals the corresponding Bloch states are made up of. d) Find the energies at the zone edge ( a ,0,0 ) for all the energy bands, and remark of which atomic orbitals the corresponding Bloch states are made up of. e) Find the energies at the zone edge ( a , a , a ) for all the energy bands, and remark of which atomic orbitals the corresponding Bloch states are made up of. 3
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Cornell >> ECE >> 4070 (Spring, 2008)
ECE407 Homework 4 Solutions (By Farhan Rana) Problem 5.1 (1D lattice energy bands outside the FBZ) a) Lesson: The lesson is that if one chooses a value of the wavevector outside the FBZ for numerical solution then one does not obtain any new energy ...
Cornell >> ECE >> 4070 (Spring, 2008)
Department of Electrical and Computer Engineering, Cornell University ECE 407: Physics of Semiconductor and Nanostructures Spring 2009 Homework 6 ` Due on March 10, 2009 at 5:00 PM Suggested Readings: a) Lecture notes Problem 6.1 (Energy bands in G...
Cornell >> ECE >> 4070 (Spring, 2008)
...
Cornell >> ECE >> 4070 (Spring, 2008)
Department of Electrical and Computer Engineering, Cornell University ECE 407: Physics of Semiconductor and Nanostructures Spring 2009 Homework 7 ` Due on March 24, 2009 at 5:00 PM Suggested Readings: a) Lecture notes b) Start homework early. Probl...
Cornell >> ECE >> 4070 (Spring, 2008)
ECE 407: Homework 7 Solutions (By Farhan Rana) Problem 7.1 a) The answer follows from elementary vector calculus result that that the gradient of any function is perpendicular to the surface of constant value of the function. In the present case, the...
Cornell >> ECE >> 4070 (Spring, 2008)
Department of Electrical and Computer Engineering, Cornell University ECE 407: Physics of Semiconductor and Nanostructures Spring 2009 Homework 8 Due on March 31, 2009 at 5:00 PM Suggested Readings: a) Lecture notes Problem 8.1: (Motion in magnetic...
Cornell >> ECE >> 4070 (Spring, 2008)
Department of Electrical and Computer Engineering, Cornell University ECE 407: Physics of Semiconductor and Nanostructures Spring 2009 Homework 9 Due on April 7, 2009 at 5:00 PM Suggested Readings: a) Lecture notes Problem 9.1: (Phonons bands in gr...
Cornell >> ECE >> 4070 (Spring, 2008)
Department of Electrical and Computer Engineering, Cornell University ECE 407: Physics of Semiconductor and Nanostructures Spring 2009 Exam 1 ` Feb. 26, 2009 INSTRUCTIONS: Every problem must be done in the blue booklet Only work done on the blue e...
Cornell >> ECE >> 4070 (Spring, 2008)
ECE407 Exam 1 Solutions (By Farhan Rana) Problem 1 (2D lattice) 30 points y a x r a1 r a2 a A B C a 2 a a a) Note that the B atoms (or the C atoms) form a centered rectangular Bravais lattice. The primitive r r a a a 2 = ax y vectors ar...
Cornell >> ECE >> 5360 (Fall, 2008)
5360 Final Take Home Exam-Version 1 For the final exam your take home problem is to design a Si Based Radio isotope battery. The general structure is shown in figure 1. The battery consists of a radioisotope source and a thin P+N junction to convert ...
Cornell >> ECE >> 5360 (Fall, 2008)
5360 Exam I Problems and Solutions 1. (15pts) MOS devices have been scaled from minium dimensions of .5-1 micron down to dimensions of 450 angstroms. Discuss the major technology issues that needed and it many ways have been addressed in the unit pr...
Cornell >> ECE >> 5360 (Fall, 2008)
Important topics and ideas I. General semiconductor and devices physics a. Understanding of semiconductor properties i. Band representation ii. Conductivity 1. Measurement of conductivity 2. Measurement of doping iii. Electron transport b. Understand...
Cornell >> ECE >> 5360 (Fall, 2008)
Practice Exam and Solutions 1. Lithography often has to be done over underlying topography on a silicon chip. This can result in variations in the resist thickness as the underlying topography goes up and down. This can sometimes cause some parts of ...
Cornell >> ECE >> 5360 (Fall, 2008)
5360 Nanofabrication Review of basic semiconductor concepts 1 Semiconductors are the class of material where the conductivity of the material can be controlled to vary a large orders of magnitude. Elemental semiconductor: Si, Ge Compound semicon...
Cornell >> ECE >> 5360 (Fall, 2008)
Doping Diffusion, Implantation and Annealing Introduction Dopant atoms move through Si at significant rates at high temperatures diffusion Useful for moving dopants from surface to desired depth Diffusion is a limitation in design of shallow j...
Cornell >> ECE >> 5360 (Fall, 2008)
Photo-Lithography ES174 Photonic and Electronic Device Laboratory Lecture # 7 Text Book: Jaeger, Chap. 2 Other Sources: Plummer Chap. 5 Tropical Cyclone Larry Mar. 19, 2006 ; 180 mph Harvard_Fabrication_ES174Si4.ppt 2006 2 Photolithography (A Sim...
Cornell >> ECE >> 5360 (Fall, 2008)
Oxidation ECE 5360 Use of Chemical Vapor Deposition Dielectrics and Insulators SiO2 Si3N4 Conductors Poly-Silicon (doped and undoped) Tungsten Copper Harvard_Fabrication_2+3.ppt 2006 2 Chemical Vapor Deposition (CVD) Atmospheric Pressure C...
Cornell >> ECE >> 5360 (Fall, 2008)
Transfer of Patterns: Wet and Dry Etching ES174 Photonic and Electronic Device Laboratory Lecture #8 Text Book: Plummer, Chap. 10 Other Sources: Jaeger, Chap. 2.2 Key Ideas mask material thin film being etched substrate Anisotropic/Directional Etch ...
Cornell >> ECE >> 5360 (Fall, 2008)
Instructions for the Filmetrics Spectroscopic Reflectometer Film Thickness Measurement system. 1. Turn on the Measurement Unit: Flip on the toggle switch on the main unit, and wait 5 minutes for the lamp to warm up. 2. Start the Software: On the comp...
Cornell >> ECE >> 5360 (Fall, 2008)
Resist Application 1. Place your wafer on the spinner chuck. Assure that you are running program 2, by pressing recipe, and then 2. Make sure the wafer is centered. 2. Press the green switch on the foot pedal to start your wafer spinning. 3. Spray th...
Cornell >> ECE >> 5360 (Fall, 2008)
CVDdepositSi3N4layer Dryetch28mholesinSi3N4 KOHetchthroughSi Spindepositcollagenorcellulose ...
Cornell >> ECE >> 5360 (Fall, 2008)
ECE 5360, Fall 2008 Lab Session 1 Lab Safety/Chemical Handling, Wafer Prep, & Substrate Resistivity Pre-lab: Complete the Reading Assignment especially materials in chapter 3 of your text on the 4 point probe technique which appears in Section 3.4.1....
Cornell >> ECE >> 5360 (Fall, 2008)
Lab # 3: Field Oxide Characterization, Patterning & Etching In this lab, you will receive your wafers back after they have been oxidized in the wet furnace in CNF. You will characterize the oxide by using a spectrophotometer. This will yield the oxid...
Cornell >> ECE >> 5360 (Fall, 2008)
Lab # 4 Patterning the Source/Drain Ion Implant In this lab, you will receive your wafers back in the same condition as you left them in Lab # 3. You will then apply photoresist on top of your patterned Field Oxide using the spinner and then pattern ...
Cornell >> ECE >> 5360 (Fall, 2008)
Lab # 5 Patterning the Source/Drain Contact Windows In this lab, you will receive your wafers back after a series of process steps have been completed for you. Since lab #4, these wafers have undergone: i) ion implantation, ii) a resist strip in a re...
Cornell >> ECE >> 5360 (Fall, 2008)
Lab # 6: Sputter Deposition, Patterning and Annealing the Al Contacts In this lab, you will receive your wafers back with 3 process steps added after Lab #5. Recall that after Lab # 5, the contact holes were opened through the gate oxide. In the firs...
Cornell >> ECE >> 5360 (Fall, 2008)
Lab #7 The Final Fabrication Step Today, you will complete the fabrication of the devices youve been working on all semester. In the second half of class, you will begin to measure the electrical properties of the devices youve made. You will finish...
Cornell >> ECE >> 5360 (Fall, 2008)
Lab # 7.5/ 8 - Device Measurements Part I: Resistors, TLMs, Diodes, and MOSFETs Having completed your fabrication process with the final anneal earlier this afternoon, you will bring your wafers to a probe station in the Phillips Hall Semiconductor T...
Cornell >> ECE >> 5360 (Fall, 2008)
Lab # 8 Device Measurements II CV on Diodes and MOS Capacitors In this lab, you will continue testing the MOS capacitors and diodes on your wafer using the probe station and the LCR Analyzer. A total of 2 probes are required: the LCR signal lead, a...
Cornell >> ECE >> 5360 (Fall, 2008)
Format for Lab reports-Version 1 This the format for your lab final report on which your lab grade will be based. 50% of the grade will be given for lab participation and the other 50% based on the accuracy style and readability of this report Abstr...
Cornell >> ECE >> 5360 (Fall, 2008)
Lab Analysis: 1. Uniformity of Field Oxide: Determine the thickness uniformity of the Field Oxide on your wafer based on your measurements at the 5 points. 2. Uniformity of Photoresist : Determine the thickness uniformity of the resist on your wafer ...
Cornell >> ECE >> 5360 (Fall, 2008)
November 29, 2006 ECE 536 Homework # 6 Solutions (Rev. 0) Fall 2006 1. Show that the ideality factor of a diode can be calculated from measured forward IV curve according to: kT q 1 = dI dV 1 I. (6.1) Starting with the diode equation which re...
Cornell >> ECE >> 5360 (Fall, 2008)
ECE 536 Problem Set 1 Due Monday Sept. 29 1. Assuming dopant atoms are universally distributed in a silicon crystal, how far apart are these atoms when the doping concentration is (a) 1015cm-3 (b) 5x1020cm-3 2. Estimate the resistivity of pure silic...
Cornell >> ECE >> 5360 (Fall, 2008)
ECE 536 Problem Set 2 Due Monday Oct. 6 1. Consider an abrupt P+N junction with Na=2x1018cm-3 and ND =1x1015cm-3. If the minority carrier lifetime is p=1x10-6sec. a) Calculate and graph the pn(x) for a long diode of length L=100um (boundary condition...
Cornell >> ECE >> 5360 (Fall, 2008)
ECE 5360 Problem Set 3 Due Wednesday October 22 1. Your field oxidation process is carried out in the CNF using a furnace tube at 1 atm pressure of wet oxide (steam) at 1100C . Using the Deal Grove Model and the following expressions for the rate co...
Cornell >> ECE >> 5360 (Fall, 2008)
ECE 5360 Homework Set 7 Due Monday December 1, 2008 1. Show that the transconductance for the n channel MOSFET in saturation is given by : Also note that the tranconductance parameter is given by The measurement software produces both of these pl...
Cornell >> ECE >> 5360 (Fall, 2008)
ECE 5360 Problem Set 4 Due Monday (Nov 3, 2008) 1. The structure shown below is implanted with oxygen using a 1 x 1018 cm-2 implant at 200 keV (RP = 0.35 m) . The left hand side is masked from the implant. Following the implant, a high temperature ...
Cornell >> ECE >> 5360 (Fall, 2008)
Problem Set 4 Soln 1. The structure shown below is implanted with oxygen using a 1 x 1018 cm-2 implant at 200 keV (RP = 0.35 m) . The left hand side is masked from the implant. Following the implant, a high temperature anneal is performed which for...
Cornell >> ECE >> 5360 (Fall, 2008)
Due Wednesday November 19th 2008 ECE 5360 Problem Set 5 and 6 ...
Cornell >> ECE >> 5360 (Fall, 2008)
PD F-XChange PD F-XChange ! W N O y bu to k C lic m C lic k to bu y N O .c W w ! .d o w o .d o c u-tra c k c u-tra c k .c 1. Consider an abrupt P+N junction with Na=2x1018cm-3 and ND =1x1015cm-3. If the minority carrier lif...
Cornell >> ECE >> 5360 (Fall, 2008)
F-XChange PD w w w .d o c u-tra c k .c F-XChange PD w w w .d o c u-tra c k .c o o m m C lic C lic k k to to bu bu y y N O N O W W ! Soln set 3 1. Your field oxidation process is carried out in the CNF using a furnac...
Cornell >> ECE >> 5360 (Fall, 2008)
Homework 7 Solutions 3. An experimental MIS (I=insulator) structure is fabricated by depositing Si 3N 4 (silicon nitride) on a silicon substrate. The nitride is deposited by directing a jet of silane and ammonia at the surface 3SiH 4 + 4NH3 Si 3N...
Cornell >> ECE >> 5360 (Fall, 2008)
PD F-XChange PD F-XChange ! W N O y bu to k C lic m C lic k to bu y N O .c W w ! .d o w o .d o c u-tra c k c u-tra c k .c 1. Assuming dopant atoms are universally distributed in a silicon crystal, how far apart are these at...
Cornell >> DSOC >> 1101 (Spring, 2009)
DSOC 1101 Spring 2009 Extra-Credit #5 Gender Discrimination Due in lecture on Wednesday, April 1, 2009 Efforts to combat sexual discrimination eventually led to the passage of Title IX of the Education Act Amendments of 1972. Title IX prohibits gen...
Cornell >> DSOC >> 1101 (Spring, 2009)
ECONOMICS 1020 SPRING 2008 MACROECONOMICS Instructor: Professor Bill Schulze 301 Warren Hall (wds3@cornell.edu) Lectures are Tuesdays and Thursdays 9:05 to 9:55 a.m. in Uris Hall Auditorium Text: Principles of Macroeconomics, Karl E. Case, Ray C. Fa...
Cornell >> ECON >> 1120 (Spring, 2009)
Current Policy Short Take: What is a Toxic Mortgage? AMY GOODMAN: Lionel Ouellette, you organize homeowners, tell us some of their stories. CHAPTER 3: Demand, Supply, and Market Equilibrium LIONEL OUELLETTE: One of our members, a Latina first-time ...
Cornell >> ECON >> 1120 (Spring, 2009)
INTRODUCTION TO MACROECONOMICS CHAPTER 5: Introduction to Macroeconomics microeconomics Examines the behavior of individual decision-making unitsbusiness rms and households. macroeconomics Deals with the economy as a whole. Macroeconomics focuses o...
Cornell >> ECON >> 1120 (Spring, 2009)
CHAPTER 7: Long-Run and Short-Run Concerns: Growth, Productivity, Unemployment, and Inflation LONG-RUN AND SHORT-RUN CONCERNS: GROWTH, PRODUCTIVITY, UNEMPLOYMENT, AND INFLATION output growth The growth rate of the output of the entire economy. per-...
Cornell >> ECON >> 1120 (Spring, 2009)
What causes stock market bubbles and what do you need to know about them? The 1990s bubble and 2000 crash in the stock market along with the Nobel Prize awarded to Kahneman and Smith has caused an increased interest in BEHAVIORAL FINANCE, which was...
Cornell >> ECON >> 1120 (Spring, 2009)
MODEL 2: THE GOVERNMENT AND FISCAL POLICY CHAPTER 9: The Government and Fiscal Policy scal policy The governments spending and taxing policies. For the time being we will ignore monetary policy The behavior of the Federal Reserve concerning the na...
Cornell >> ECON >> 1120 (Spring, 2009)
MODEL 3: GOVERNMENT AND FISCAL POLICY CHAPTER 9: The Government and Fiscal Policy FIGURE 9.1 Adding Net Taxes (T) and Government Purchases (G) to the Circular Flow of Income 2007 Prentice Hall Business Publishing Principles of Economics 8e by Case...
Cornell >> ECON >> 1120 (Spring, 2009)
THE SUPPLY OF MONEY CHAPTER 10: The Money Supply and the Federal Reserve System WHAT IS MONEY? Money is anything that is generally accepted as a medium of exchange. A Means of Payment, or Medium of Exchange barter The direct exchange of goods and s...
Cornell >> ECON >> 1120 (Spring, 2009)
CHAPTER 12: Money, the Interest Rate, and Output: Analysis and Policy MONEY, THE INTEREST RATE, AND OUTPUT: Introduction to the I-S, L-M Model goods market The market in which goods and services are exchanged and in which the equilibrium level of ag...
Cornell >> DSOC >> 1101 (Spring, 2009)
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Cornell >> DSOC >> 1101 (Spring, 2009)
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Cornell >> DSOC >> 1101 (Spring, 2009)
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Cornell >> ECON >> 1120 (Spring, 2009)
Behavioral Finance The 1990s bubble and 2000 crash in the stock market along with the Nobel Prize awarded to Kahneman and Smith has caused an increased interest in BEHAVIORAL FINANCE, which was already one of the hottest areas in business. Vernon s...
Cornell >> DSOC >> 1101 (Spring, 2009)
Culture and Society DSOC 1101: Introduction to Sociology February 11, 2009 (Lecture originally scheduled for 2/09/09) PrePre-Professional.Association.Towards.Careers in.Health Have you ever considered pursing a minor? Attention Science and Agricult...
Cornell >> DSOC >> 1101 (Spring, 2009)
Deviance and Social Control DSOC 1101: Introduction to Sociology February 23, 2009 1 Deviant Behavior What do insanity, emotional disorder, leprosy, senility, anatomical abnormalities, and crime all have in common? 1. They are all deviant; that is...
Cornell >> DSOC >> 1101 (Spring, 2009)
2/17/2009 Come To A Capella Night Live Buy your tickets now DSOC 1101 February 18, 2009 www.BaileyTickets.com B il Ti k t $6 in advance $8 at the door CornellFarmworker Program SummerInternshipProgram Would you like to be paid to work with the Cor...
Cornell >> DSOC >> 1101 (Spring, 2009)
Warning Concerning Copyright Restrictions The copyright law of the United States (Title 17, United States Code) governs the making of photocopies or other reproductions of copyrighted material. Under certain conditions specified in the law, libraries...
Cornell >> DSOC >> 1101 (Spring, 2009)
REVIEW FOR MIDTERM EXAM 50 MINUTE TEST OPTIONAL IF YOU WANT TO TAKE MAKE UP ON LAST DAY OF CLASS EXAM HELD IN CLASSROOM MULTIPLE CHOICE AND SHORT ANSWERS BRING A BLUEBOOK AND PENCILS INCLUDES PROBLEMS SIMILAR TO MYECONLAB Chapter 1: Review Te...
Cornell >> DSOC >> 1101 (Spring, 2009)
DSOC 1101 Response Paper #5 Due in section the week of March 2, 2009 The following two questions are based on the assigned readings for February 23 & 25, 2009. Select one and write a one-page, double-spaced response. 1. How do we know precisely what...
Cornell >> DSOC >> 1101 (Spring, 2009)
DSOC 1101 Response Paper #6 Due in section the week of March 9, 2009 The following two questions are based on the assigned readings for March 2 & 4, 2009. Select one and write a one-page, double-spaced response. 1. What is the difference between int...
Cornell >> DSOC >> 1101 (Spring, 2009)
DSOC 1101 Response Paper #7 Due in section the week of March 23, 2009 The following question is on the assigned readings for March 9, 2009. Write a one-page, double-spaced response using examples from the assigned readings. 1. There is a common view...
Cornell >> DSOC >> 1101 (Spring, 2009)
DSOC 1101 Response Paper #8 Due in section the week of March 30, 2009 The following questions are based on the assigned readings for March 23 & 25, 2009. Select one and write a one-page, double-spaced response using examples from the assigned readin...
Cornell >> DSOC >> 1101 (Spring, 2009)
DSOC 1101 Response Paper #9 Due in section the week of April 6, 2009 The following questions are based on the assigned readings for March 30 & April 1, 2009. Select one and write a one-page, double-spaced response using examples from the assigned re...
Cornell >> DSOC >> 1101 (Spring, 2009)
DSOC 1101 Response Paper #10 Due in section the week of April 13, 2009 The following questions are based on the assigned readings for April 6 & 8, 2009. Select one and write a one-page, double-spaced response using examples from the assigned reading...
Cornell >> DSOC >> 1101 (Spring, 2009)
Socialization: The Micro-Sociological Transmission of Culture DSOC 1101: Introduction to Sociology February 16, 2009 Announcements Extra-credit #2 Due in class on Wednesday, 2/18/09 Assignment #1 Due Monday, 3/2/09 Culture Culture is the know...
Cornell >> DSOC >> 1101 (Spring, 2009)
Sociological Perspectives DSOC 1101 January 28, 2009 Theory and Theoretical Approaches A theory involves constructing abstract interpretations that can be used to explain a wide variety of empirical situations. Early Sociologists: Enlightenment A...
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