458.3
Communication EE Electronics Assignment #6
Assigned: Due:
26 February 2009 10 March 2009
- ADS assignment - you may work in groups of 2 if you wish, or do it on your own. If you work in groups of 2, clearly indicate to the marker who your partner is !!
Use the NEC BJT S-Parameter model (sp_nec_NE02100_1_19940401, bias Vce=10V, Ic=5 mA) from the library (click Library button at the top, then S-parameter Library -> NEC) to design a 1 GHz RF amplifier using the unilateral constant gain circle procedure described in class. A template (assign6_templ_prj) with 2 schematics is available on the website. Some desired features of the design are as follows: the amplifier gain required at 1 GHz is 2 dB less than GT,max (bilateral) or GMSG (bilateral) the desired gain must be obtained using a matching circuit on either the source load or side but not both (ie: terminate the other side in 50 ).
I suggest doing 2 schematics (like in Assign. 5), one to plot stability, the desired constant gain circles, and determine the gamma required for the desired unilateral gain termination. The other schematic can be used to terminate the transistor in the required passive circuits. For the 2nd schematic, measure the S-parameters from 0.5 to 1.5 GHz and comment on the value dB(S21) obtained at 1 GHz. Is this the same gain as predic...