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### lecture2122-mosfundamentals

Course: ECE 335, Fall 2009
School: Wisconsin
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Word Count: 178

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MOS Topic: Capacitor Exact Solution x 10 12 Semiconductor Charge Ns vs. Surface Potential 10 9 8 7 10 9 8 7 x 10 12 Semiconductor Charge Ns vs. Gate Voltage accumulation N (cm-2) accumulation Ns(cm-2) 6 5 4 3 2 1 -0.2 0 6 5 4 3 2 inversion depletion threshold! -2 -1 0 1 2 3 4 5 depletion 0.2 0.4 0.6 0.8 1 s inversion 1 0 -3 s (V) V (V) G Note how in accumulation and strong inversion the sheet...

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MOS Topic: Capacitor Exact Solution x 10 12 Semiconductor Charge Ns vs. Surface Potential 10 9 8 7 10 9 8 7 x 10 12 Semiconductor Charge Ns vs. Gate Voltage accumulation N (cm-2) accumulation Ns(cm-2) 6 5 4 3 2 1 -0.2 0 6 5 4 3 2 inversion depletion threshold! -2 -1 0 1 2 3 4 5 depletion 0.2 0.4 0.6 0.8 1 s inversion 1 0 -3 s (V) V (V) G Note how in accumulation and strong inversion the sheet charge density depends almost linearly on the applied voltage just like the sheet charge density of a parallel plate capacitor depends linearly on the voltage across the capacitor. ECE 335, Spring 2008 Surface Potential vs. Gate Voltage Depletion Width vs. Gate Voltage 0.5 0.45 1 0.4 0.8 0.35 W( m) 0.6 0.3 0.2 0.25 0.15 0.1 0.05 s (V) 0.4 0.2 0 -0.2 -0.4 -5 -4 -3 -2 -1 0 VG (V) 1 2 3 4 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 V (V) G Note how the surface potential is nearly constant in accumulation and inversion, and significantly varies only in depletion. Note how the depletion region width indeed increases with the applied gate bias until a threshold value is reached, and remains constant afterwards (for VG>VT). ...

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