e Sm iconductor De Mode vice ling &C haracte rization Le cture27
Profe Ronald L. Carte ssor r ronc@ du uta.e S pring 2001
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MOS FET De vice S tructre
Fig. 4-1, M& A*
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n-channe e l nh. circuit m l ode
RG C gs RB C bs
G
RDS I drain DSS DSD RB
C gd RD D C bd C gb
S
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B
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S PICE m t Mode osfe l I nstance
C ARM*, C 4, p. 290 h.
M General Form
MOSFET
M<nam e> < drain node> <gate node> < source node> + <bulk /subs trate node> <model nam e> + [L=< value> ] [W=< value> ] L = C L. [m h. ] + [AD= <value>] [AS= <value>] W = C W. [m h. ] + [PD= <value>] [PS= <value>] 2 + [NRD=< value>] [NRS =<value>] AD = Drain A [m ] + [NRG=<v alue> ] [NRB= <value>] 2 AS= S ourceA[m ] + [M= <value>] E xamples
NRD, NRS= D and Sdiff in square s
M1 14 2 13 0 PNOM L=25u W=12u M13 15 3 0 0 PSTRONG M = de m vice ultiplie r M16 17 3 0 0 PSTRONG M=2 L27 April 24 M28 0 2 100 100 NWEAK L=33u W=12u
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S PICE m t osfe m l le ls ode ve
Le l 1 is theS ve chichm an-Hodge m l s ode Le l 2 is a ge e ve om try-base analytical m l d, ode Le l 3 is a se i-e pirical, short-channe m l ve m m l ode Le l 4 is theBS ve IM1 m l ode Le l 5 is theBS ve IM2 m l, e ode tc.
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S PICE Param te e rs Le l 1 - 3 (S ve tatic)
Param. Par amet er Descr ipt ion Z er o-bias Vt hr esh VTO KP GAMMA PHI T r ansconduct ance Body-ef f ect par . Sur f ace inver sion pot . Def . 8.E- * . . . .E- * . . . T yp. .E- * . . . 8.E- * 8.E+ * 8.E+ * 8.E- * Unit s V A/ V^ V^/ V /V m cm^ - cm^ - m
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LAMBDA Channel-lengt h mod. T hin ox ide t hickness TOX NSUB NSS LD
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Subst r at e doping Sur f ace st at e densit y Lat er al dif f usion
S PICE Param te e rs Le l 1 - 3 (S ve tatic)
Param. Par amet er Descr ipt ion T ype of gat e mat er ial* TPG UO IS JS PB RD RS RSH Sur f ace mobilit y Bulk j ct n. sat . cur r . Bulk j ct n. sat . cur r . dens. Bulk j unct ion pot ent ial Dr ain ohmic r esist ance Sour ce ohmic r esist ance S/ D sheet ohmic r es. 0.8 0 0 0 0.75 10 10 10 Def . 1 600 T yp. 1 700 cm^ 2/ V-s A A/ m^ 2 V Ohms Ohms Ohms/ sq
2
7
Unit s
1.E-14 1.E-15
* 0 = alum inumgate 1 = silicon gateoppositesubstratetype , , = silicon gatesam as substrate e .
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S PICE Param te e rs Le l 1 - 3 (Q & N) ve
Param. Par amet er Descr ipt ion Z er o-bias bulk cap./ A CJ MJ CJSW MJSW FC CGBO CGDO CGSO AF KF
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Def . . . .
Typ. (.E- * . .E- * . . (.E- * .E- * (.E- * .
Unit s Fd/ m^* Fd/ m
Bulk j ct n. gr ading coef f . Z er o-bias per imet er C/ l Per . C gr ading coef f . For .-bias cap. coef f . Gat e-bulk lap over C/ L Gat e-dr ain over lap C/ L G-S over lap C/ L Flicker -noise exp. Flicker -noise coef f .
Fd/ m Fd/ m Fd/ m
.
.E- *
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Le l 1 S ve tatic Const. For De Equations vice
Vfb = -TPG*EG/2 -Vt*ln(NS UB/ni) - q*NS *TOX/e S Ox VTO = as give or n, = Vfb + PHI + GAMMA*sqrt(PHI ) KP = as give or n, = UO*e Ox/TOX C APSarespicepars., te chnological constants are lowe case r L27 April 24
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Le l 1 S ve tatic Const. For De Equations vice
= KP*[W/(L-2*LD)] = 2*K, K not spice GAMMA = as give or n, = TOX*sqrt(2*e i*q*NS S UB)/e Ox 2*phiP = PHI = as give or n, = 2*Vt*ln(NS UB/ni) I SD = as give or = JS n, *AD I SS = as give or = JS n, *AS
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Le l 1 S ve tatic De Equations vice
vgs < VTH, ids = 0 VTH < vds + VTH < vgs, id = KP*[W/(L-2*LD)]*[vgs-VTH-vds/2] *vds*(1 + LAMBDA*vds) VTH < vgs < vds + VTH, id = KP*[W/(L-2*LD)]*(vgs - VTH)^2 *(1 + LAMBDA*vds)
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S PICE Param te e rs Le l 2 ve
Param. Par amet er Descr ipt ion T ot al channel chg coef f . NEFF UCRIT UEXP UTRA Cr it ical E-f ield f or mob. Ex pon. coef f . f or mob. T r ansver se f ield coef f . Def . 1 0 0 T yp. 5 V/ cm 0.1 0.5 Unit s 1.E+04 1.E+04
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S PICE Param te e rs Le l 2 & 3 ve
Param. Par amet er Descr ipt ion Sur f ace-f ast st at e dens. NFS XJ VMAX XQC DELTA Met allur gical j ct n. dept h Max . dr if t v of car r . Coef f . of ch. Q shar e W idt h ef f . on Vt hr esh Def . 0.0 0.0 0.0 0.0 0.0 T yp. 1.E+10 1.E-06 5.E+04 0.4 1.0 Unit s cm^ -2 m m/ s
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Le l 2 S ve tatic De Equations vice
Accounts for variation of channe pote l ntial fo...