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DK590X D. CRESSLER GEORGIA INSTITUTE OF TECHNOLOGY, ATLANTA, USA A COMPREHENSIVE AND UP-TO-DATE GUIDE CONTENTS
Edited by
TO ALL ASPECTS OF SILICON HETEROSTRUCTURES
An extraordinary combination of material science, manufacturing processes, and innovative thinking spurred the development of SiGe heterojunction devices that offer a wide array of functions, unprecedented levels of performance, and low manufacturing costs. While there are many books on specific aspects of Si heterostructures, the Silicon Heterostructure Handbook: Mat e ri a l s , Fabri c at i o n , Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy is the first book to bring all aspects together in a single source. Featuring broad, comprehensive, and in-depth discussion, this handbook distills the current state of the field in areas ranging from materials to fabrication, devices, CAD, circuits, and applications. The editor includes "snapshots" of the industrial state-of-the-art fo r devices and circuits, presenting a novel perspective for comparing the present status with future directions in the field. With each chapter contributed by expert authors from leading industrial and research institutions worldwide, the book is unequalled not only in breadth of scope, but also in depth of coverage, timeliness of results, and authority of references. It also includes a foreword by Dr. Bernard S. Meyerson, a pioneer in SiGe technology. Containing nearly 1000 figures along with valuable appendices, the Silicon Hetero s t ructure Handbook authoritative ly survey s m at e rials, fabrication, d evice phy s i c s , transistor optimization, optoelectronics components, measurement, compact modeling, circuit design, and device simulation.
FEATURES
Provides broad, comprehensive, in-depth, and authoritative coverage of the current state of the field Features a global "who's who" of expert contributors, each from a leading industrial or research organization from around the world Presents up-to-date research results, a comprehensive list of seminal references, and state-of-the-art devices and circuits Includes a foreword by Dr. Bernard S. Meyerson, nearly 1000 figures, and indispensable appendices Catalog no. DK590X, July 2005, c. 1224 pp. ISBN: 0-8493-3559-0, $149.95 / 85.00
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Preface Foreword; B. Meyerson INTRODUCTION; J.D. Cressler The Big Picture A Brief History of the Field SiGe AND Si STRAINEDLAYER EPITAXY Overview; J.D. Cressler Strained SiGe and Si Epitaxy; B. Tillack and P. Zaumseil Si/SiGe:C Epitaxy by RTCVD; D. Dutartre, F. Delglise, C. Fellous, L. Rubaldo, and A. Talbot MBE Growth Techniques; M. Oehme and E. Kasper UHV/CVD Growth Techniques; T.N. Adam Defects and Diffusion in Strained SiGe and Si; A. Peaker and V.P. Markevich Stability Constraints in SiGe Epitaxy; A. Fischer Electronic Properties of Strained Si/SiGe and Si1-yCy Alloys; J.L. Hoyt Carbon Doping of SiGe; H.J. Osten Contact Metallization on SiGe; C.K. Maiti Selective Etching Techniques for SiGe/Si; S. Monfray, S. Borel, and T. Skotnicki FABRICATION OF SiGe HBT BiCMOS TECHNOLOGY Overview; J.D. Cressler Device Structures and BiCMOS Integration Issues; D.L. Harame
Fabricating SiGe HBTs on CMOS-Compatible SOI; J. Cai and T.H. Ning Passive Components; J.N. Burghartz Industry Examples at the State-of-the-Art: IBM; A.J. Joseph and J.S. Dunn Industry Examples at the State-of-the-Art: Jazz; P.H.G. Kempf Industry Examples at the State-of-the-Art: Hitachi; K. Washio Industry Examples at the State-of-the-Art: Infineon; T. Meister, H. Schfer, W. Perndl, and J. Bck Industry Examples at the Stateof-the-Art: IHP; D. Knoll Industry Examples at the Stateof-the-Art: ST; A. Chantre, A.M. Laurens, B. Szelag, H. Baudry, P. Chevalier, J. Mourier, G. Troillard, B. Martinet, M. Marty, and A. Monroy Industry Examples at the Stateof-the-Art: TI; B. El-Kareh, S. Balster, P. Steinmann, and H. Yasuda Industry Examples at the State-of-the-Art: Philips; P. Deixler and R. Colclaser SiGe HBTs Overview; J.D. Cressler Device Physics; J.D. Cressler Second-Order Effects; J.D. Cressler Low-Frequency Noise; G. Niu Broadband Noise; D.R. Greenberg Microscopic Noise Simulation; G. Niu Linearity; G. Niu
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Contents continued...
pnp SiGe HBTs; J.D. Cressler Temperature Effects; J.D. Cressler Radiation Effects; J.D. Cressler Reliability Issues; J.D. Cressler Self-Heating and Thermal Effects; J-S. Rieh Device-Level Simulation; G. Niu Performance Limits; G. Freeman, A. Stricker, J-S. Rieh, and D. Greenberg HETEROSTRUCTURE FETs Overview; J.D. Cressler Biaxial Strained-Si CMOS; K. Rim Uniaxial Stressed-Si MOSFETs; S.E. Thompson SiGe-Channel HFETs; S. Banerjee Industry Examples at TheState-of-the-Art: Intel 90 nm Logic Technologies; S.E. Thompson OTHER HETEROSTRUCTURE DEVICES Overview; J.D. Cressler Resonant Tunneling Devices; S. Tsujino, D. Grtzmacher, and U. Gennser
IMPATT Diodes; E. Kasper and M. Oehme Engineered Substrates for Electronic and Optoelectronic Applications; E.A. Fitzgerald Self-Assembling Nanostructures in Ge(Si)/Si Heteroepitaxy; R. Hull OPTOELECTRONIC COMPONENTS Overview; J.D. Cressler Si/SiGe LEDs; K.L. Wang, S. Tong, and H.J. Kim Near Infrared Detectors; L. Colace, G. Masini, and G. Assanto Si-Based Photonic Transistors for Integrated Optoelectronics; W-X. Ni and A. Elfving Si/SiGe Quantum Cascade Emitters; D.J. Paul MEASUREMENT AND MODELING Overview; J.D. Cressler Best-Practice ac Measurement Techniques; R.A. Groves Industrial Application of TCAD for SiGe Development; D.C. Sheridan, J.B. Johnson, and R. Krishnasamy
Compact Modeling of SiGe HBTs: HICUM; M. Schrter Compact Modeling of SiGe HBTs: MEXTRAM; S. Mijalkovic CAD Tools and Design Kits; S.E. Strang Parasitic Modeling Noise and Mitigation Approaches in SiGe RF Designs; R. Singh Transmission Lines on Si; Y.V. Tretiakov Improved De-Embedding Techniques; Q. Liang CIRCUITS AND APPLICATIONS Overview; J.D. Cressler SiGe as an Enabler for Wireless Communications Systems; L.E. Larson and D.Y.C. Lie LNA Optimization Strategies; Q. Liang Linearization Techniques; L.C.N. de Vreede and M.P. van der Heijden SiGe MMICs; H. Schumacher SiGe mm-Wave ICs; J-F. Luy Wireless Building Blocks Using SiGe HBTs; J.R. Long
Direct Conversion Architectures for SiGe Radios; S. Chakraborty and J. Laskar RF MEMS Techniques in Si/SiGe; J. Papapolymerou Wideband Antennas on Si; M.M. Tentzeris and R. Li Packaging Issues for SiGe Circuits; K. Lim, S. Pinel, and J. Laskar Industry Examples at The-State-of-the-Art: IBM; D.J. Friedman and M. Meghelli Industry Examples at The-State-of-the-Art: Hitachi; K. Washio Industry Examples at The-State-of-the-Art: ST; D. Belot, et al. APPENDICES Properties of Si and Ge; J.D. Cressler The Generalized Moll-Ross Relations; J.D. Cressler Generalized Integral Charge Control Relations; M. Schrter Sample SiGe HBT Compact Model Parameters; R.M. Malladi INDEX
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