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6 Pages

2N4416a

Course: PHYS 3330, Fall 2008
School: Colorado
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Word Count: 1131

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Siliconix N-Channel 2N4416/2N4416A/SST4416 Vishay JFETs PRODUCT SUMMARY Part Number 2N4416 2N4416A SST4416 VGS(off) (V) v6 2.5 to 6 v6 V(BR)GSS Min (V) 30 35 30 gfs Min (mS) 4.5 4.5 4.5 IDSS Min (mA) 5 5 5 FEATURES D Excellent High-Frequency Gain: 2N4416/A, Gps 13 dB (typ) @ 400 MHz D Very Low Noise: 3 dB (typ) @ 400 MHz D Very Low Distortion D High AC/DC Switch Off-Isolation BENEFITS D D D D D Wideband...

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Siliconix N-Channel 2N4416/2N4416A/SST4416 Vishay JFETs PRODUCT SUMMARY Part Number 2N4416 2N4416A SST4416 VGS(off) (V) v6 2.5 to 6 v6 V(BR)GSS Min (V) 30 35 30 gfs Min (mS) 4.5 4.5 4.5 IDSS Min (mA) 5 5 5 FEATURES D Excellent High-Frequency Gain: 2N4416/A, Gps 13 dB (typ) @ 400 MHz D Very Low Noise: 3 dB (typ) @ 400 MHz D Very Low Distortion D High AC/DC Switch Off-Isolation BENEFITS D D D D D Wideband High Gain Very High System Sensitivity High Quality of Amplification High-Speed Switching Capability High Low-Level Signal Amplification APPLICATIONS D D D D High-Frequency Amplifier/Mixer Oscillator Sample-and-Hold Very Low Capacitance Switches DESCRIPTION The 2N4416/2N4416A/SST4416 n-channel JFETs are designed to provide high-performance amplification at high frequencies. The TO-206AF (TO-72) hermetically-sealed package is available with full military processing (see Military Information.) The TO-236 (SOT-23) package provides a low-cost option and is available with tape-and-reel options (see Packaging Information). For similar products in the TO-226AA (TO-92) package, see the J304/305 data sheet. TO-206AF (TO-72) TO-236 (SOT-23) S 1 4 C D 1 3 S 2 D Top View 2N4416 2N4416A 3 G 2 G Top View SST4416 (H1)* *Marking Code for TO-236 For applications information see AN104. Document Number: 70242 S-04028Rev. F, 04-Jun-01 www.vishay.com 7-1 2N4416/2N4416A/SST4416 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage : (2N/SST4416) . . . . . . . . . . . . . . . . . . . . . 30 V (2N4416A) . . . . . . . . . . . . . . . . . . . . . . . . . 35 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 _C Storage Temperature : (2N Prefix) . . . . . . . . . . . . . . . . . . 65 to 200 _C (SST Prefix) . . . . . . . . . . . . . . . . . 65 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . 55 to 150 _C Power Dissipation : (2N Prefix)a . . . . . . . . . . . . . . . . . . . . . . 300 mW (SST Prefix)b . . . . . . . . . . . . . . . . . . . . 350 mW Notes a. Derate 2.4 mW/_C above 25_C b. Derate 2.8 mW/_C above 25_C SPECIFICATIONS (TA = 25_C UNLESS NOTED) Limits 2N4416 2N4416A SST4416 Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Symbol Test Conditions Typa Min Max Min Max Min Max Unit V(BR)GSS VGS(off) IDSS IG = 1 mA , VDS = 0 V VDS = 15 V, ID = 1 nA VDS = 15 V, VGS = 0 V VGS = 20 V, VDS = 0 V (2N) 36 3 10 2 4 0.002 0.6 20 2 150 0.7 30 6 5 15 100 100 35 2.5 5 6 15 100 100 30 6 5 15 V mA pA Gate Reverse Current IGSS TA = 150_C VGS = 15 V, VDS = 0 V (SST) TA = 125_C VDG = 10 V, ID = 1 mA VDS = 10 V, VGS = 6 V VGS = 0 V, ID = 1 mA IG = 1 mA , VDS = 0 V 1 nA Gate Operating Current Drain Cutoff Currentc Drain-Source On-Resistancec Gate-Source Forward Voltagec IG ID(off) rDS(on) VGS(F) pA W V Dynamic Common-Source Forward Transconductanceb Common-Source Output Conductanceb Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Common-Source Output Capacitance Equivalent Input Noise Voltagec gfs gos Ciss Crss Coss en VDS = 10 V, VGS = 0 V f = 1 kHz VDS = 15 V, VGS = 0 V f = 1 MHz VDS = 15 V, VGS = 0 V f = 1 kHz 6 15 2.2 0.7 1 6 4.5 7.5 50 4 0.8 2 4.5 7.5 50 4 0.8 2 nV Hz pF 4.5 7.5 50 mS mS www.vishay.com 7-2 Document Number: 70242 S-04028Rev. F, 04-Jun-01 2N4416/2N4416A/SST4416 Vishay Siliconix HIGH FREQUENCY SPECIFICATIONS FOR 2N4416/2N4416A (TA = 25_C UNLESS NOTED) Limits 100 MHz 400 MHz Parameter Common Source Input Conductance Common Source Input Susceptance Common Source Output Conductance Common Source Output Susceptance Common Source Forward Transconductance Common-Source Power Gain Noise Figure Symbol giss biss goss boss gfs Gps NF Test Conditions Min Max 100 2,500 Min Max 1,000 10,000 100 4,000 Unit VDS = 15 V, VGS = 0 V 75 1,000 4,000 m mS VDS = 15 V, ID = 5 mA RG = 1 kW 18 2 10 4 dB Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. c. This parameter not registered with JEDEC. NH TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage 20 IDSS Saturation Drain Current (mA) 10 rDS(on) Drain-Source On-Resistance ( gfs ) Forward Transconductance (mS) 500 On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage 100 rDS @ ID = 1 mA, VGS = 0 V 400 gos @ VDS = 10 V, VGS = 0 V f = 1 kHz 80 gos Output conductance (S) 16 IDSS 8 12 gfs 6 300 rDS gos 60 8 4 200 40 4 IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz 0 2 4 6 8 VGS(off) Gate-Source Cutoff Voltage (V) 10 2 100 20 0 0 0 0 0 4 6 8 VGS(off) Gate-Source Cutoff Voltage (V) 2 10 Output Characteristics 10 VGS(off) = 2 V 8 ID Drain Current (mA) ID Drain Current (mA) VGS = 0 V 6 0.2 V 0.4 V 4 0.6 V 0.8 V 2 1.0 V 1.2 V 1.4 V 4 6 8 VDS Drain-Source Voltage (V) 12 15 Output Characteristics VGS(off) = 3 V VGS = 0 V 9 0.3 V 0.6 V 6 0.9 V 1.2 V 1.5 V 3 1.8 V 0 0 2 10 0 0 2 4 6 8 VDS Drain-Source Voltage (V) 10 Document Number: 70242 S-04028Rev. F, 04-Jun-01 www.vishay.com 7-3 2N4416/2N4416A/SST4416 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Output Characteristics 5 VGS(off) = 2 V VGS = 0 V 4 ID Drain Current (mA) 0.2 V ID Drain Current (mA) 0.4 V 3 0.6 V 2 0.8 V 1.0 V 1 1.2 V 1.4 V 0 0 0.2 0.4 0.6 0.8 1.0 0 0 0.2 0.4 0.6 0.8 1.0 4 Output Characteristics 5 VGS(off) = 3 V 0.3 V 0.6 V 3 0.9 V 1.5 V 2 1.8 V 1 2.1 V 1.2 V VGS = 0 V VDS Drain-Source Voltage (V) VDS Drain-Source Voltage (V) Transfer Characteristics 10 VGS(off) = 2 V 8 ID Drain Current (mA) ID Drain Current (mA) TA = 55_C 6 25_C VDS = 10 V 8 10 Transfer Characteristics VGS(off) = 3 V VDS = 10 V TA = 55_C 6 25_C 4 125_C 4 125_C 2 2 0 0 0.4 0.8 1.2 1.6 2 VGS Gate-Source Voltage (V) 0 0 0.6 1.2 1.8 2.4 3 VGS Gate-Source Voltage (V) Transconductance vs. Gate-Source Voltage 10 VGS(off) = 2 V gfs Forward Transconductance (mS) 8 TA = 55_C 6 25_C VDS = 10 V f = 1 kHz gfs Forward Transconductance (mS) 8 10 Transconductance vs. Gate-Source Voltgage VGS(off) = 3 V VDS = 10 V f = 1 kHz TA = 55_C 6 25_C 4 4 125_C 125_C 2 2 0 0 0.4 0.8 1.2 1.6 2 VGS Gate-Source Voltage (V) 0 0 0.6 1.2 1.8 2.4 3 VGS Gate-Source Voltage (V) www.vishay.com 7-4 Document Number: 70242 S-04028Rev. F, 04-Jun-01 2N4416/2N4416A/SST4416 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) On-Resistance vs. Drain Current 300 rDS(on) Drain-Source On-Resistance ( ) TA = 25_C 240 AV Voltage Gain VGS(off) = 2 V 180 3 V 120 80 100 Circuit Voltage Gain vs. Drain Current g fs R L AV + 1 ) R g L os Assume VDD = 15 V, VDS = 5 V RL + 60 10 V ID 40 VGS(off) = 2 V 60 20 3 V 0 0.1 ID Drain Current (mA) 1 0 10 0.1 ID Drain Current (mA) 1 10 Common-Source Input Capacitance vs. Gate-Source Voltage 5 Crss Reverse Feedback Capacitanc...

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