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P7_04

Course: E 344, Fall 2009
School: Stevens
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diffusivity The of Boron in Silicon at 1200oC is 7x10-13 cm2/sec. At 1000oC it is 2x10-15 cm2/sec. (a) Determine the diffusivity of B in Si at T=1150oC. (b) B Is a p-type dopant or an n-type dopant in Si? () What is the majority carrier in pure Si before B doping? (d) What is the majority carrier after B doping?

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diffusivity The of Boron in Silicon at 1200oC is 7x10-13 cm2/sec. At 1000oC it is 2x10-15 cm2/sec. (a) Determine the diffusivity of B in Si at T=1150oC. (b) B Is a p-type dopant or an n-type dopant in Si? () What is the majority carrier in pure Si befo...

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The diffusivity of Arsenic (As) in Silicon (Si) at T=1200oC is 5x10-13 cm2/sec. At T=1000oC it is 3x10-15 cm2/sec. (a) Determine the diffusivity of As in Si at T=1100oC. (b) Is As a p-type dopant or an n-type dopant in Si? () What is the majority car
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