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Course: MDL 112, Fall 2009School: Allan Hancock College
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stresses Residual and optical properties of Ta2O5 thin films prepared by dual ionbeam sputtering deposition S. G. Yoon and D. H. Yoon* Department of Advanced Materials Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do 440-746, Korea Tantalum pentaoxide (Ta2O5) dielectric thin films have attracted a great deal of interest for applications in optical communications due to their excellent transparency,...
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stresses Residual and optical properties of Ta2O5 thin films prepared by dual ionbeam sputtering deposition
S. G. Yoon and D. H. Yoon*
Department of Advanced Materials Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do 440-746, Korea
Tantalum pentaoxide (Ta2O5) dielectric thin films have attracted a great deal of interest for applications in optical communications due to their excellent transparency, chemical and thermal stability, large refractive index difference and compatibility with standard microelectronic processes. The optical thin films of current technological and economic interest are ultra-high-precision band pass filters used in dense wavelength division multiplexing (DWDM) systems. Ta2O5 thin films are deposited by dual ion beam sputtering (DIBS). Two Kaufman-type ion sources are used for DIBS process. In DIBS processes, the beam voltage beam and current of the sputtering ion source are 1250 V and 600 mA, respectively. Argon gas is used as a working gas and oxygen gas is fed near the target. The base pressure is about 2 X10-8 torr. In the DIBS process, the beam voltage and beam current of the assist ion source are 550 V and 150 mA, respectively. A mixture of oxygen and argon are fed into the assist ion source. The optical properties and intrinsic stress of Ta2O5 thin films were studied as a function of the assist ion beam voltage (250 ~ 650 ...
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