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2n5486

Course: GEL 21947, Fall 2009
School: Northwestern State...
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/ 2N5484 5485 / 5486 / MMBF5484 / 5485 / 5486 2N5484 2N5485 2N5486 MMBF5484 MMBF5485 MMBF5486 G S G S TO-92 D SOT-23 Mark: 6B / 6M / 6H D NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed primarily for electronic switching applications such as low On Resistance analog switching. Sourced from Process 50. Absolute Maximum Ratings* Symbol VDG VGS IGF TJ ,Tstg...

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/ 2N5484 5485 / 5486 / MMBF5484 / 5485 / 5486 2N5484 2N5485 2N5486 MMBF5484 MMBF5485 MMBF5486 G S G S TO-92 D SOT-23 Mark: 6B / 6M / 6H D NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed primarily for electronic switching applications such as low On Resistance analog switching. Sourced from Process 50. Absolute Maximum Ratings* Symbol VDG VGS IGF TJ ,Tstg Drain-Gate Voltage Gate-Source Voltage Forward Gate Current TA = 25C unless otherwise noted Parameter Value 25 - 25 10 -55 to +150 Units V V mA C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJC RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N5484-5486 350 2.8 125 357 Max *MMBF5484-5486 225 1.8 556 Units mW mW/C C/W C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 1997 Fairchild Semiconductor Corporation 2N5484 / 5485 / 5486 / MMBF5484 / 5485 / 5486 N-Channel RF Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Typ Max Units OFF CHARACTERISTICS V(BR)GSS IGSS VGS(off) Gate-Source Breakdown Voltage Gate Reverse Current Gate-Source Cutoff Voltage IG = - 1.0 A, VDS = 0 VGS = - 20 V, VDS = 0 VGS= - 20 V, VDS= 0, TA= 100C 5484 VDS = 15 V, ID = 10 nA 5485 5486 - 25 - 1.0 - 0.2 - 3.0 - 4.0 - 6.0 V nA A V V V - 0.3 - 0.5 - 2.0 ON CHARACTERISTICS IDSS Zero-Gate Voltage Drain Current* VDS = 15 V, VGS = 0 5484 5485 5486 1.0 4.0 8.0 5.0 10 20 mA mA mA SMALL SIGNAL CHARACTERISTICS gfs Forward Transfer Conductance VDS = 15 V, VGS = 0, f = 1.0 kHz 5484 5485 5486 VDS = 15 V, VGS = 0, f = 100 MHz 5484 VDS = 15 V, VGS = 0, f = 400 MHz 5485 / 5486 VDS = 15 V, VGS = 0, f = 1.0 kHz 5484 5485 5486 VDS = 15 V, VGS = 0, f = 100 MHz 5484 VDS = 15 V, VGS = 0, f = 400 MHz 5485 / 5486 VDS = 15 V, VGS = 0, f = 100 MHz 5484 VDS = 15 V, VGS = 0, f = 400 MHz 5485 5486 VDS = 15 V, VGS = 0, f = 1.0 MHz VDS = 15 V, VGS = 0, f = 1.0 MHz VDS = 15 V, VGS = 0, f = 1.0 MHz VDS= 15 V, RG = 1.0 k, 5484 f = 100 MHz VDS= 15 V, RG = 1.0 k, 5484 f = 400 MHz VDS= 15 V , RG = 1.0 k, 5485 / 5486 f = 100 MHz VDS= 15 V, RG = 1.0 k, 5485 / 5486 f = 400 MHz 3000 3500 4000 6000 7000 8000 100 1000 50 60 75 75 100 2500 3000 3500 5.0 1.0 2.0 3.0 4.0 2.0 4.0 mhos mhos mhos mhos mhos mhos mhos mhos mhos mhos mhos mhos mhos pF pF pF dB dB dB dB Re(yis) Input Conductance gos Output Conductance Re(yos) Output Conductance Re(yfs) Forward Transconductance 5 Ciss Crss Coss NF Input Capacitance Reverse Transfer Capacitance Output Capacitance Noise Figure *Pulse Test: Pulse Width 300 ms, Duty Cycle 2% 2N5484 / 5485 / 5486 / MMBF5484 / 5485 / 5486 N-Channel RF Amplifier (continued) Typical Characteristics Transfer Characteristics 20 Channel Resistance vs Temperature 1000 r DS - DRAIN ON RESISTANCE ( ) 500 300 200 100 V GS(OFF) = -4.5V TA = -55 C T A = +25 C O O V DS = 15V ID - DRAIN CURRENT (mA) 16 V GS(OFF) = -1.0V -2.5 V -5.0V -8.0 V 12 T A = +125O C TA = -55 C T A = +25 C T A = +125O C O O 8 50 30 20 10 4 V DS V -50 GS = 100mV =0V 150 -2.5 V 0 0 -1 -2 -3 -4 VGS- GATE-SOURCE VOLTAGE(V) -5 0 50 100 T A - AMBIENT TEMPERATURE (C) Transconductance Characteristics gfs -- TRANSCONDUCTANCE (mmhos) 7 6 5 4 3 2 1 0 0 Common Drain-Source Characteristics I D -- DRAIN CURRENT (mA) DS TA = -55 C T A = +25 C T A = +125O C O O V = 15V 5 4 TYP V 3 T A = +25 C GS(OFF) O = -5.0V = 0V 5V .0V -0. -1 V -1.5 -2.0V TA = -55 C T A = +25 C T A = +125O C V GS(OFF) = -4.5V O O V GS -2.5V -3.0V -3.5V 2 1 -2.5 V -1 -2 -3 -4 VGS- GATE-SOURCE VOLTAGE(V) -5 -4.0V 0 0 0.2 0.4 0.6 0.8 VDS - DRAIN-SOURCE VOLTAGE(V) 1 gos -- OUTPUT CONDUCTANCE (u mhos) T A = +25 C f = 1.0 kHz 20 10 5 O V GS(OFF) = -5.5V 5.0V 10V 15V 20V gfs, I DSS @ V DS = 15 V, V r DS @ VDS= 100mV, V GS = 0 PULSE GS = 0 100 50 30 20 10 5 V DG = 5v 10 20 15 5 10 15 20 V GS(OFF) 1 0.5 = -3.5V V 0.1 0.01 0.02 GS(OFF) = -1.5V 5 10 20 10 -1 VGS(OFF) @ VGS = 15V, I D= 1nA -2 -3 -5 -7 V - GATE-SOURCE VOLTAGE(V) GS 3 2 1 - 10 0.05 0.1 0.2 0.5 1 2 I D -- DRAIN CURRENT (mA) gfs --- TRANSCONDUCTANCE ( mmhos ) I -- DRAIN CURRENT ( mA ) DSS Output Conductance vs Drain Current r DS -- DRAIN "ON" RESISTANCE ( ) Transconductance Parameter Interactions 2N5484 / 5485 / 5486 / MMBF5484 / 5485 / 5486 N-Channel RF Amplifier (continued) Typical Characteristics (continued) Transconductance vs Drain Current gfs -- TRANSCONDUCTANCE (mmhos) 10 5 e n- NOISE VOLTAGE ( nV/ Noise Voltage vs Frequency V DG = 15V BW = 6.0 Hz @ f = 10 Hz, 100 Hz = 0.2 f @ f > 1.0 kHz Hz ) V GS(OFF) = - 1.5V O TA = -55 C T A = +25 C T A = +125 C O O 1 0.5 TA = -55 C V GS(OFF) T A = +25 C T A = +125 O C = - 5V V DG = 15V f = 1.0 kHz O O 10 5 I D = 0.5 mA I D = 3 mA 0.1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 I D - DRAIN CURRENT (mA) 5 10 1 0.01 0.03 0.1 0.3 1 3 10 f -- FREQUENCY (kHz) 30 100 Capacitance vs Voltage 10 ) -- CAPACITANCE (pF) f = 0.1 - 1.0 MHz NF -- NOISE FIGURE (dB) 5 C is ( V DS = 15 V) 1 C rs ( V DS = 0 V) 4 5 Noise Figure Frequency V DS I D = 15V = 5.0 mA 3 R g = 1.0 k O T A = +25 C 2 C is( C rs 1 0 -5 -10 -15 VGS-- GATE-SOURCE VOLTAGE(V) -20 0 10 20 30 50 100 200 300 f -- FREQUENCY (MHz) 500 1000 5 Power Dissipation vs. Ambient Temperature P D - POWER DISSIPATION (mW) 350 300 250 200 150 100 50 0 0 25 50 75 100 TEMPERATURE (C) 125 150 TO-92 SOT-23 2N5484 / 5485 / 5486 / MMBF5484 / 5485 / 5486 N-Channel RF Amplifier (continued) Common Source Characteristics Input Admittance Yiss -- INPUT ADMITTANCE (mmhos) 10 5 V DS = 15V V GS = 0 (CS) -- OUTPUT CONDUCTANCE (mmhos) 1 Output Admittance b OSS (x 10) g OSS 1 b iss g iss V DS = 15V V GS = 0 (CS) 100 200 300 500 f -- FREQUENCY (MHz) 700 1000 100 200 300 500 f -- FREQUENCY (MHz) 700 1000 Forward Transadmittance Yfss -- FORWARD TRANSFER (mmhos) Y rss-- REVERSE TRANSFER (mmhos) Y OSS Reverse Transadmittance 10 5 10 5 +g fss -b fss 1 - b rss 1 -g V DS = 15V V GS = 0 (CS) 100 rss ( X 0.1) V DS = 15V V GS = 0 (CS) 100 200 300 500 f -- FREQUENCY (MHz) 700 1000 200 300 500 f -- FREQUENCY (MHz) 700 1000 2N5484 / 5485 / 5486 / MMBF5484 / 5485 / 5486 N-Channel RF Amplifier (continued) Common Gate Characteristics Input Admittance Y ogs-- OUTPUT CONDUCTANCE (mmhos) Y -- INPUT ADMITTANCE (mmhos) igs 1 Output Admittance V DS = 15V V GS = 0 (CG) b OgS (x 10) g Ogs 10 5 g igs b igs V DS = 15V V GS = 0 (CG) 100 200 300 500 f -- FREQUENCY (MHz) 700 1000 1 100 200 300 500 f -- FREQUENCY (MHz) 700 1000 Forward Transadmittance Y rgs-- REVERSE TRANSFER (mmhos) Yfgs -- FORWARD TRANSFER (mmhos) 10 5 Reverse Transadmittance 1 V DS = 15V V GS = 0 (CG) g rgs +g fgs -b fgs 1 - b rgs V DS = 15V V GS = 0 (CG) 100 200 300 500 f -- FREQUENCY (MHz) 700 1000 5 100 200 300 500 f -- FREQUENCY (MHz) 700 1000 TO-92 Tape and Reel Data TO-92 Packaging Configuration: Figure 1.0 TAPE and REEL OPTION FSCINT Label sample FAIRCHILD SEMICONDUCTOR CORPORATION LOT: CBVK741B019 HTB:B QTY: 10000 See Fig 2.0 for various Reeling Styles NSID: PN2222N SPEC: D/C1: D9842 SPEC REV: QA REV: B2 FSCINT Label (FSCINT) 5 Reels per Intermediate Box F63TNR Label Customized Label 375mm x 267mm x 375mm Intermediate Box F63TNR Label sample LOT: CBVK741B019 FSID: PN222N D/C1: D9842 D/C2: QTY1: QTY2: QTY: 2000 SPEC: SPEC REV: CPN: N/F: F Customized Label (F63TNR)3 TO-92 TNR/AMMO PACKING INFROMATION Packing Reel Style A E Ammo M P Quantity 2,000 2,000 2,000 2,000 EOL code D26Z D27Z D74Z D75Z AMMO PACK OPTION See Fig 3.0 for 2 Ammo Pack Options Unit weight = 0.22 gm Reel weight with components = 1.04 kg Ammo weight with components = 1.02 kg Max quantity per intermediate box = 10,000 units FSCINT Label 327mm x 158mm x 135mm Immediate Box Customized Label 5 Ammo boxes per Intermediate Box F63TNR Label 333mm x 231mm x 183mm Intermediate Box Customized Label (TO-92) BULK PACKING INFORMATION EOL CODE J18Z J05Z NO EOL CODE DESCRIPTION TO-18 OPTION STD TO-5 OPTION STD TO-92 STANDARD STRAIGHT FOR: PKG 92, 94 (NON PROELECTRON SERIES), 96 TO-92 STANDARD STRAIGHT FOR: PKG 94 (PROELECTRON SERIES BCXXX, BFXXX, BSRXXX), 97, 98 LEADCLIP DIMENSION NO LEAD CLIP NO LEAD CLIP NO LEADCLIP QUANTITY 2.0 K / BOX 1.5 K / BOX 2.0 K / BOX BULK OPTION See Bulk Packing Information table Anti-static Bubble Sheets FSCINT Label L34Z NO LEADCLIP 2.0 K / BOX 2000 units per EO70 box for std option 114mm x 102mm x 51mm Immediate Box 5 EO70 boxes per intermediate Box 530mm x 130mm x 83mm Intermediate box Customized Label FSCINT Label 10,000 units maximum per intermediate box for std option 2001 Fairchild Semiconductor Corporation March Rev. 2001, B1 TO-92 Tape and Reel Data, continued TO-92 Reeling Style Configuration: Figure 2.0 Machine Option "A" (H) Machine Option "E" (J) Style "A", D26Z, D70Z (s/h) Style "E", D27Z, D71Z (s/h) TO-92 Radial Ammo Packaging Configuration: Figure 3.0 FIRST WIRE OFF IS COLLECTOR ADHESIVE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON TOP FIRST WIRE OFF IS EMITTER ADHESIVE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON BOTTOM ORDER STYLE D74Z (M) ORDER STYLE D75Z (P) FIRST WIRE OFF IS EMITTER (ON PKG. 92) ADHESIVE TAPE IS ON BOTTOM SIDE FLAT OF TRANSISTOR IS ON BOTTOM FIRST WIRE OFF IS COLLECTOR (ON PKG. 92) ADHESIVE TAPE IS ON BOTTOM SIDE FLAT OF TRANSISTOR IS ON TOP September 1999, Rev. B TO-92 Tape and Reel Data, continued TO-92 Tape and Reel Taping Dimension Configuration: Figure 4.0 Hd P Pd b Ha H1 HO d L L1 W1 S WO W2 W t t1 P1 F1 P2 DO ITEM DESCRIPTION PO Base of Package to Lead Bend Component Height Lead Clinch Height Component Base Height Component Alignment ( side/side ) Component Alignment ( front/back ) Component Pitch Feed Hole Pitch Hole Center to First Lead Hole Center to Component Center Lead Spread Lead Thickness Cut Lead Length Taped Lead Length Taped Lead Thickness Carrier Tape Thickness SYMBOL b Ha HO H1 Pd Hd P PO P1 P2 F1/F2 d L L1 t t1 W WO W1 W2 DO S DIMENSION 0.098 (max) 0.928 (+/- 0.025) 0.630 (+/- 0.020) 0.748 (+/- 0.020) 0.040 (max) 0.031 (max) 0.500 (+/- 0.020) 0.500 (+/- 0.008) 0.150 (+0.009, -0.010) 0.247 (+/- 0.007) 0.104 (+/- 0 .010) 0.018 (+0.002, -0.003) 0.429 (max) 0.209 (+0.051, -0.052) 0.032 (+/- 0.006) 0.021 (+/- 0.006) 0.708 (+0.020, -0.019) 0.236 (+/- 0.012) 0.035 (max) 0.360 (+/- 0.025) 0.157 (+0.008, -0.007) 0.004 (max) User Direction of Feed TO-92 Reel Configuration: Figure 5.0 Carrier Tape Width Hold - down Tape Width Hold - down Tape position Feed Hole Position Sprocket Hole Diameter Lead Spring Out Note : All dimensions are in inches. ELECT ROSTATIC SEN SITIVE D EVICES D4 D1 ITEM DESCRIPTION SYSMBOL MINIMUM MAXIMUM F63TNR Label Customized Label D2 Reel Diameter Arbor Hole Diameter (Standard) (Small Hole) Core Diameter Hub Recess Inner Diameter Hub Recess Depth Flange to Flange Inner Width W1 Hub to Hub Center Width W3 Note: All dimensions are inches D1 D2 D2 D3 D4 W1 W2 W3 13.975 1.160 0.650 3.100 2.700 0.370 1.630 14.025 1.200 0.700 3.300 3.100 0.570 1.690 2.090 W2 D3 July 1999, Rev. A TO-92 Package Dimensions TO-92 (FS PKG Code 92, 94, 96) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.1977 2000 Fairchild Semiconductor International January 2000, Rev. B SOT-23 Tape and Reel Data SOT-23 Packaging Configuration: Figure 1. 0 Customized La bel Packaging Description: SOT-23 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a m ultilayer film (Heat Activated Adhesive in na ture) primarily composed of polyester film, adhesive layer, sealan and an t, ti-static sprayed agent. These reeled pa in stan rd option are shippe with rts da d 3,000 units per 7" or 177cm diameter reel. The reels are dark blue in color an is made of polystyrene plastic (antid static coated Othe option comes in 10,000 units per 13" ). r or 330cm diameter reel. This and s ome other options are describe in the P d ackaging Information table. These full reels are individua labele an placed inside lly d d a s tanda intermediate made of recyclable corrugated rd brown pap with a Fairchil d logo printing. One pizza box er contains eight reels maximum. And thes intermed e iate boxes are placed inside a labeled shipping box which comes in different sizes depending on t e nu h mber of parts shippe d. Antistatic Cover Tape Human Readable Label Embossed Carrier Tape 3P SOT-23 Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Reel Size Box Dimension (mm) Max qty per Box Weight per unit (gm) Weight per Reel (kg) Note/Comments Standard (no flow code ) TNR 3,000 7" Dia 187x107x183 24,000 0.0082 0.1175 D87Z TNR 10,000 13" 343x343x64 30,000 0.0082 0.4006 3P 3P 3P SOT-23 Unit Orientation 343mm x 342mm x 64mm Intermediate box for L87Z Option Human Readable Label Human Readable Label sample H uman readable Label SOT-23 Tape Leader and Trailer Configuration: Figure 2. 0 187mm x 107mm x 183mm Intermediate Box for Stand Option ard Carrier Tape Cover Tape Components Trailer Tape 300mm minimum or 75 empt y poc kets Leader Tape 500mm minimum or 125 empty pockets 2000 Fairchild Semiconductor International September 1999, Rev. C SOT-23 Tape and Reel Data, continued SOT-23 Embossed Carrier Tape Configuration: Figure 3.0 P0 T E1 P2 D0 D1 F E2 B0 Wc W Tc K0 P1 A0 User Direction of Feed Dimensions are in millimeter Pkg type SOT-23 (8mm) A0 3.15 +/-0.10 B0 2.77 +/-0.10 W 8.0 +/-0.3 D0 1.55 +/-0.05 D1 1.125 +/-0.125 E1 1.75 +/-0.10 E2 6.25 min F 3.50 +/-0.05 P1 4.0 +/-0.1 P0 4.0 +/-0.1 K0 1.30 +/-0.10 T 0.228 +/-0.013 Wc 5.2 +/-0.3 Tc 0.06 +/-0.02 Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C). 20 deg maximum Typical component cavity center line 0.5mm maximum B0 20 deg maximum component rotation 0.5mm maximum Sketch A (Side or Front Sectional View) Component Rotation A0 Sketch B (Top View) Typical compon...

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Dijkstra's algorithm can be expressed formally as follows:G - arbitrary connected graph v0 - is the initial beginning vertex V - is the set of all vertices in the graph G S - set of all vertices with permanent labels n - number of ver
Georgia Tech - CS - 4710
CS 4710 LabAugust 27, 2002IntroductionsHeather Mahaney a PhD student in the CoC a Office: CRB 367 a Office Hours: MWF 1-2 CoC commons? a mahaneyh@cc.gatech.edua What to expectTuesdays - Lecture in CoC 102 a Thursdays - Lab in French Buil
Georgia Tech - CS - 4710
Operators and ConditionalsSeptember 10th 2002Lists vs Scalars Scalars Contain a single value types number string reference undefined Lists May contain multiple values tyoes arrays hashes any elements separated by commas in parenthese
Georgia Tech - CS - 4710
#Name, Date#Lab 5#Program Description#*##*Program Body*##*##Place main program here. Subroutines are called from this section.#**##*Subroutines*##*##Place subroutines here
Georgia Tech - CS - 4710
<?xml version="1.0" encoding="UTF-8"?><Error><Code>NoSuchKey</Code><Message>The specified key does not exist.</Message><Key>7ae83523a38a91b1ee99e963084db19ca13fcd09.txt</Key><RequestId>724DD0863105DC04</RequestId><HostId>x6YMBOzWDY2XjTm7OJDFH6PWz3YW
Washington - CEE - 517
AppendixHiram Mechling III CEE 600 - Wind Energy Independent Study Professor Dorothy Reed 4 Mar. 2009 Wind Data Reference: Energy Resources Research Laboratory(EERL), Pacific Northwest Wind Data Base http:/mime.oregonstate.edu/ERRL/WATABLE.htmlPer
Washington - CEE - 517
NBCCCommentaryMethods HW4,Spring2006 W=40ft windward face 22.5 6.50E04 3.29E01 1.57 28.21 0.08 0.24 H[m] W[m]=40ft n0[Hz] Beta(Damping) RhoB[kg/m3] D[m]=50ft 50.3 12.2 0.606 0.01 150 15.24NBCC Alongwind Vbar[m/s] C q Cee VH[m/s] K[forExposureAin NB
Washington - CEE - 517
SolariBookMethod HW4Spring2006 h[m](165ft) b[m](40ft) d[m](50ft) n1[Hz]use (0.1*N)asan estimateofthe period B[kg/m3] Cw Cl Cd 1(damping) 50.29 12.19 15.24 0.606 150 0.8 0.5 1.3 0.01 Tableeqn numberonp. 336S&S Q J B f1 x1 N(f1) CDF2 x2 M(z) C(x2) R M1
Washington - CEE - 517
Dallas - HXM - 025000
Course Professor Term MeetingsEE 4360 001: Digital Communications Hlaing Minn Fall 2007 MW 2:30-3:45PM, ECSN 2.112Professor's Contact Information Office Phone 972 883 2889 Office Location ECSN 4.204 Email Address hlaing.minn@utdallas.edu Office H
SUNY Buffalo - CSE - 560
Iterative Modification and Incremental Evaluation of Preference QueriesJan ChomickiDept. of Computer Science and Engineering, University at Buffalo, Buffalo, NY 14260-2000 chomicki@cse.buffalo.eduAbstract. We present here a formal foundation for
SUNY Buffalo - CSE - 560
Conceptual Database DesignJan Chomicki University at BuffaloUniversity at BuffaloJan Chomicki (University at Buffalo)Conceptual database design1 / 30Outline1Entity-Relationship Data Model2Mapping E-R schemas to relations3Descrip
SUNY Buffalo - CSE - 560
Relational DatabasesJan Chomicki University at BuffaloJan Chomicki ()Relational databases1 / 49Plan of the course1Relational databases Relational database design Conceptual database design Object databases XML databases Advanced topics2
SUNY Buffalo - CSE - 560
XML databasesJan ChomickiUniversity at BuffaloJan Chomicki (University at Buffalo)XML databases1/9Outline1XML data model2XPath3XQueryJan Chomicki (University at Buffalo)XML databases2/9XML documents (simplified)XML tree
Cox School of Business - ECO - 4361
ROTTEN APPLES: AN INVESTIGATION OF THE PREVALENCE AND PREDICTORS OF TEACHER CHEATING* BRIAN A. JACOBANDSTEVEN D. LEVITTWe develop an algorithm for detecting teacher cheating that combines information on unexpected test score uctuations and suspi
Cox School of Business - ECO - 4361
RETHINKING PUBLIC EDUCATION^The Origins of State-Level Differences in the Public Provision of Higher Education: 1890-1940By CLAUDIA GOLDIN AND LAWRENCE F . KATZ *In recent years, the publicly controlled sector has accounted for about 67 percent
Cox School of Business - ECO - 4361
Cox School of Business - ECO - 4361
Cox School of Business - ECO - 4361
Cox School of Business - ECO - 4361
Cox School of Business - ECO - 4361
Cox School of Business - ECO - 4361
How Vouchers Could Change the Market for Education Derek Neal The Journal of Economic Perspectives, Vol. 16, No. 4. (Autumn, 2002), pp. 25-44.Stable URL: http:/links.jstor.org/sici?sici=0895-3309%28200223%2916%3A4%3C25%3AHVCCTM%3E2.0.CO%3B2-6 The Jo
Cox School of Business - ECO - 4361
ARTICLE IN PRESSEconomics of Education Review 26 (2007) 316 www.elsevier.com/locate/econedurevEducational vouchers for universal pre-schoolsHenry M. Levin, Heather L. SchwartzNational Center for the Study of Privatization in Education, Teachers
Cox School of Business - ECO - 4361
Cox School of Business - ECO - 4361
Cox School of Business - ECO - 4361
Cox School of Business - ECO - 4361
TEACHER QUALITY Changing Labor-Market Opportunities for Women and the Quality of Teachers, 19572000By SEAN P. CORCORAN, WILLIAM N. EVANS,The quality of teachers has been declining for decades, and no one wants to talk about it . . We need to nd a
Cox School of Business - ECO - 4351
ECO 4351 Labor EconomicsProf. Daniel L. Millimet http:/faculty.smu.edu/millimet/classes/eco4351/main.htmlINTRODUCTIONLabor Economics. study of employment, wage determination, and resulting Economics distribution of income among individuals and ho