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MIT - CSAIL - 6.012
6.012 - Electronic Devices and CircuitsLecture 22 - Bounding the Mid-band Range - Outline AnnouncementsHandouts - Lecture Outline and Summary Design Problem - Due next week Wed.; answer sheet posted after Lec. Review - Multistage amplifiers; Sp
MIT - CSAIL - 6.012
Small Signal Models of the Bipolar Transistor 6.301 - Spring 2002 Massachusetts Institute of Technology(Courtesy of Michael Perrott. Used with permission.)General Thevenin Resistance ViewMichael PerrottRthc RB IC RB Rthb RE RC Rthc Rthb rRC
MIT - CSAIL - 6.012
Small Signal Models of the MOSFET Transistor 6.301 - Spring 2002 Massachusetts Institute of Technology Michael Perrott(Courtesy of Michael Perrott. Used with permission.)General Thevenin Resistance ViewID RG RthgRD Rthd RG Rthg Rths RS Rths vs
MIT - CSAIL - 6.012
6.012 - Electronic Devices and CircuitsLecture 23 - The Cascode and the A741 - Outline Announcements Handouts - Lecture Outline and Summary; Cascode Design Problem - Due tomorrow Review - Bounding mid-band OCTC/SCTC methods: ti = RiCi; estimat
MIT - CSAIL - 6.012
16.012 - Electronic Devices and Circuits Fall 2003The marvelous CASCODE:V+ RLQ1+ vout -RS Q2 vS + V-cascode a two-transistor configuration formed of a common-emitter/ -source stage followed by a commonbase/-gate stage The cascode is a v
MIT - CSAIL - 6.012
6.012 - Electronic Devices and CircuitsLecture 24 - Intrinsic Limits of Transistor Speed - Outline AnnouncementsHandouts - Lecture Outline and Summary Problem Set No. 10 - Don't forget, there is one, and it is due Friday! Final - Monday, Dec.
MIT - CSAIL - 6.012
6.012 - Electronic Devices and CircuitsLecture 25 - CMOS Scaling Rules - Outline AnnouncementsHandouts - Lecture Outline and Summary; on web: CMOS scaling Course evaluation - at the end of lecture today (approx. 11:45) Final - Monday, Dec. 15, 9:
MIT - CSAIL - 6.012
1 6.012 - Electronic Devices and Circuits, Fall 2003CMOS Gate Delays, Power, and ScalingGATE DELAYS Earlier in the term (Lec. 16) we calculated the gate delay for a symmetrical CMOS inverter with* * * VTn = |VTp| VT, Co xn = Co xp Co x, and Kn
MIT - CSAIL - 6.012
6.012 - Electronic Devices and CircuitsLecture 26 - The Current State-of-the-Art - Outline AnnouncementsHandouts - Lecture Outline and Summary, Life after 6.012 Final - Monday, Dec. 15, 9:00 am to 12 noon, duPont GymnasiumCovering all the course
MIT - CSAIL - 6.012
1 MASSACHUSETTS INSTITUTE OF TECHNOLOGY Department of Electrical Engineering and Computer Science6.012 ELECTRONIC DEVICES AND CIRCUITSProblem Set No. 7 Issued: October 17, 2003 Reading Assignments: Lecture 14 (10/21/03) Lecture 15 (10/23/03) Lectu
MIT - CSAIL - 6.012
1 MASSACHUSETTS INSTITUTE OF TECHNOLOGY Department of Electrical Engineering and Computer Science6.012 ELECTRONIC DEVICES AND CIRCUITSProblem Set No. 8 Issued: October 24, 2003 Reading Assignments: Lecture 15 (10/26/03) Lecture 16 (10/28/03) Lectu
MIT - CSAIL - 6.012
Courtesy of Michael Perrott. Used with permissionHSPICE Toolbox for MATLABMichael Perrott http:/www-mtl.mit.edu/perrott Copyright 1999 by Silicon Laboratories, Inc. 3 June 2003Note: This software is distributed under the terms of the GNU Public
MIT - CSAIL - 6.012
1 MASSACHUSETTS INSTITUTE OF TECHNOLOGY Department of Electrical Engineering and Computer Science6.012 ELECTRONIC DEVICES AND CIRCUITSProblem Set No. 9 Issued: October 31, 2003 Reading Assignments: Lecture 18 (11/4/03) Lecture 19 (11/6/03) Lecture
MIT - CSAIL - 6.012
Concise SPICEIhsan Djomehri, Spring 19991Introduction to Circuit SimulationDeveloped at Berkeley in the 70s, SPICE has evolved into the tool of choice for circuit level simulation. This handout seeks to provide a concise, fairly comprehensive
MIT - ELECTRICAL - 6.012
Fall 20056.012 Microelectronic Devices and CircuitsProf. J. A. del AlamoOptical Receiver Design Project November 18, 2005 Due: December 6, 2005 on the MIT course website (no later than 12:55PM) (late project reports not accepted)1. Overview T
MIT - ELECTRICAL - 6.012
~ AMPLIFIERS ~For calculations of:Intrinsic voltage gain ("open-circuit," "unloaded"): Avo = vout/vin, set RL = , Rs = 0 Intrinsic current gain ("short-circuit"): Aio = iout/iin, set RL = 0, Rs = Intrinsic transconductance: Gmo = iout/vin, set RL
MIT - ELECTRICAL - 6.012
6.012 Microelectronics Devices and Circuits Fall 20051Cadence Tutorial (Part One)By Kerwin Johnson Version: 10/24/05 (based on 6.776 setup by Mike Perrott)Table of ContentsIntroduction. ..2 Shorthand Conventions.4 Getting Help within Cadenc
MIT - ELECTRICAL - 6.012
Fall 20056.012 Microelectronic Devices and CircuitsProf. J. A. del AlamoDecember 19, 2005 - Final ExamName:Recitation:problem grade 1 2 3 4 totalGeneral guidelines (please read carefully before starting): Make sure to write your name
MIT - ELECTRICAL - 6.012
Spring 20016.012 Microelectronic Devices and CircuitsProf. J. A. del AlamoMay 24, 2001 - Final ExamName:Recitation:problem grade 1 2 3 4 5 totalGeneral guidelines (please read carefully before starting): Make sure to write your name o
MIT - ELECTRICAL - 6.012
Fall 20056.012 Microelectronic Devices and CircuitsProf. J. A. del AlamoHomework #1 - September 9, 2005 Due: September 16, 2005 at recitation ( 2 PM latest) (late homework will not be accepted)Please write your recitation session time on your
MIT - ELECTRICAL - 6.012
Fall 20056.012 Microelectronic Devices and CircuitsProf. J. A. del AlamoHomework #2 September 16, 2005 Due: September 23, 2005 at recitation ( 2 PM latest) (late homework will not be accepted)Please write your recitation session time on your
MIT - ELECTRICAL - 6.012
Fall 20056.012 Microelectronic Devices and CircuitsProf. J. A. del AlamoHomework #3 - September 23, 2005 Due: September 30, 2005 at recitation ( 2 PM latest) (late homework will not be accepted)Please write your recitation session time on you
MIT - ELECTRICAL - 6.012
Fall 20056.012 Microelectronic Devices and CircuitsProf. J. A. del AlamoHomework #4 September 30, 2005 Due: October 7, 2005 at recitation ( 2 PM latest) (late homework will not be accepted)Please write your recitation session time on your pr
MIT - ELECTRICAL - 6.012
Fall 20056.012 Microelectronic Devices and CircuitsProf. J. A. del AlamoHomework #5 - October 14, 2005 Due: October 21, 2005 at recitation ( 2 PM latest) (late homework will not be accepted)Please write your recitation session time on your pr
MIT - ELECTRICAL - 6.012
Fall 20056.012 Microelectronic Devices and CircuitsProf. J. A. del AlamoHomework #6 - October 21, 2005 Due: October 28, 2005 at recitation ( 2 PM latest) (late homework will not be accepted)Please write your recitation session time on your pr
MIT - ELECTRICAL - 6.012
Fall 20056.012 Microelectronic Devices and CircuitsProf. J. A. del AlamoHomework #7 October 28, 2005 Due: November 4, 2005 at recitation ( 2 PM latest) (late homework will not be accepted)Please write your recitation session time on your pro
MIT - ELECTRICAL - 6.012
Fall 20056.012 Microelectronic Devices and CircuitsProf. J. A. del AlamoHomework #8 November 4, 2005 Due: November 10, 2005 at lecture ( noon latest) (late homework will not be accepted)Please write your recitation session time on your probl
MIT - ELECTRICAL - 6.012
Fall 20056.012 Microelectronic Devices and CircuitsProf. J. A. del AlamoHomework #9 - November 18, 2005 Due: November 30, 2005 at recitation ( 2 PM latest) (late homework will not be accepted)Please write your recitation session time on your
MIT - ELECTRICAL - 6.012
Fall 20056.012 Microelectronic Devices and CircuitsProf. J. A. del AlamoHomework #10 December 2, 2005 Optional homework. No due date. Do not turn in.In Howe & Sodini, please note difference between Exercises, labeled Ex.y, and Problems, labe
MIT - ELECTRICAL - 6.012
6.012 Microelectronic Devices and Circuits Fall 2005Lecture 11Lecture 1 6.012 Overview September 8, 2005Contents: 1. The microelectronics revolution 2. Keys to the microelectronics revolution 3. Contents of 6.012Reading assignment: Howe a
MIT - ELECTRICAL - 6.012
6.012 - Microelectronic Devices and Circuits - Fall 2005Lecture 2-1Lecture 2 - Semiconductor Physics (I) September 13, 2005Contents: 1. Silicon bond model: electrons and holes 2. Generation and recombination 3. Thermal equilibrium 4. Intrinsic
MIT - ELECTRICAL - 6.012
6.012 - Microelectronic Devices and Circuits - Fall 2005Lecture 3-1Lecture 3 - Semiconductor Physics (II) Carrier Transport September 15, 2005Contents: 1. Thermal motion 2. Carrier drift 3. Carrier diffusionReading assignment: Howe and Sodini
MIT - ELECTRICAL - 6.012
6.012 - Microelectronic Devices and Circuits - Fall 2005Lecture 4-1Lecture 4 - PN Junction and MOS Electrostatics (I) Semiconductor Electrostatics in Thermal Equilibrium September 20, 2005 Contents: 1. Non-uniformly doped semiconductor in thermal
MIT - ELECTRICAL - 6.012
6.012 - Microelectronic Devices and Circuits - Fall 2005Lecture 5-1Lecture 5 - PN Junction and MOS Electrostatics (II) pn Junction in Thermal Equilibrium September 22, 2005 Contents: 1. Introduction to pn junction 2. Electrostatics of pn junction
MIT - ELECTRICAL - 6.012
6.012 - Microelectronic Devices and Circuits - Fall 2005Lecture 6-1Lecture 6 - PN Junction and MOS Electrostatics (III) Electrostatics of pn Junction under Bias September 27, 2005 Contents: 1. electrostatics of pn junction under bias 2. depletion
MIT - ELECTRICAL - 6.012
6.012 - Microelectronic Devices and Circuits - Fall 2005Lecture 7-1Lecture 7 - PN Junction and MOS Electrostatics (IV) Electrostatics of Metal-Oxide-Semiconductor Structure September 29, 2005 Contents: 1. Introduction to MOS structure 2. Electros
MIT - ELECTRICAL - 6.012
6.012 Microelectronic Devices and Circuits Fall 2005Lecture 81Lecture 8 PN Junction and MOS Electrostatics (V) Electrostatics of MetalOxideSemiconductor Structure (cont.) October 4, 2005 Contents: 1. Overview of MOS electrostatics under bi
MIT - ELECTRICAL - 6.012
6.012 - Microelectronic Devices and Circuits - Fall 2005Lecture 9-1Lecture 9 - MOSFET (I) MOSFET I-V Characteristics October 6, 2005 Contents: 1. MOSFET: cross-section, layout, symbols 2. Qualitative operation 3. I-V characteristics Reading assig
MIT - ELECTRICAL - 6.012
6.012 Microelectronic Devices and Circuits Fall 2005Lecture 101Lecture 10 MOSFET (II) MOSFET IV Characteristics (cont.) October 13, 2005 Contents: 1. The saturation regime 2. Backgate characteristics Reading assignment: Howe and Sodini, Ch. 4
MIT - ELECTRICAL - 6.012
6.012 - Microelectronic Devices and Circuits - Fall 2005Lecture 11-1Lecture 11 - MOSFET (III) MOSFET Equivalent Circuit Models October 18, 2005Contents: 1. Low-frequency small-signal equivalent circuit model 2. High-frequency small-signal equiv
MIT - ELECTRICAL - 6.012
6.012 - Microelectronic Devices and Circuits - Fall 2005Lecture 12-1Lecture 12 - Digital Circuits (I) The inverter October 20, 2005Contents: 1. Introduction to digital electronics: the inverter 2. NMOS inverter with resistor pull up Reading ass
MIT - ELECTRICAL - 6.012
6.012 - Microelectronic Devices and Circuits - Fall 2005Lecture 13-1Lecture 13 - Digital Circuits (II) MOS Inverter Circuits October 25, 2005Contents: 1. NMOS inverter with resistor pull-up (cont.) 2. NMOS inverter with current-source pull-up 3
MIT - ELECTRICAL - 6.012
6.012 Microelectronic Devices and Circuits Fall 2005Lecture 141Lecture 14 Digital Circuits (III) CMOS October 27, 2005 Contents: 1. Complementary MOS (CMOS) inverter: introduction 2. CMOS inverter: noise margins 3. CMOS inverter: propagation
MIT - ELECTRICAL - 6.012
6.012 - Microelectronic Devices and Circuits - Fall 2005Lecture 15-1Lecture 15 - The pn Junction Diode (I) I-V Characteristics November 1, 2005Contents: 1. pn junction under bias 2. I-V characteristicsReading assignment: Howe and Sodini, Ch.
MIT - ELECTRICAL - 6.012
6.012 - Microelectronic Devices and Circuits - Fall 2005Lecture 16-1Lecture 16 - The pn Junction Diode (II) Equivalent Circuit Model November 3, 2005Contents: 1. I-V characteristics (cont.) 2. Small-signal equivalent circuit model 3. Carrier ch
MIT - ELECTRICAL - 6.012
6.012 - Microelectronic Devices and Circuits - Fall 2005Lecture 17-1Lecture 17 - The Bipolar Junction Transistor (I) Forward Active Regime November 8, 2005 Contents: 1. BJT: structure and basic operation 2. I-V characteristics in forward active r
MIT - ELECTRICAL - 6.012
6.012 - Microelectronic Devices and Circuits - Fall 2005Lecture 18-1Lecture 18 - The Bipolar Junction Transistor (II) Regimes of Operation November 10, 2005 Contents: 1. Regimes of operation. 2. Large-signal equivalent circuit model. 3. Output ch
MIT - ELECTRICAL - 6.012
6.012 Microelectronic Devices and Circuits Fall 2005Lecture 191Lecture 19 Transistor Amplifiers (I) CommonSource Amplifier November 15, 2005 Contents: 1. Amplifier fundamentals 2. Commonsource amplifier 3. Commonsource amplifier with currents
MIT - ELECTRICAL - 6.012
6.012 Microelectronic Devices and Circuits Fall 2005Lecture 201Lecture 20 Transistor Amplifiers (II) Other Amplifier Stages November 17, 2005 Contents: 1. Commonsource amplifier (cont.) 2. Commondrain amplifier 3. Commongate amplifierReadin
MIT - ELECTRICAL - 6.012
6.012 - Microelectronic Devices and Circuits - Fall 2005Lecture 21-1Lecture 21 - Multistage Amplifiers (I) Multistage Amplifiers November 22, 2005 Contents: 1. Introduction 2. CMOS multistage voltage amplifier 3. BiCMOS multistage voltage amplif
MIT - ELECTRICAL - 6.012
6.012 Microelectronic Devices and Circuits Fall 2005Lecture 221Lecture 22 Multistage Amplifiers (II) DC Voltage and Current Sources November 29, 2005Contents: 1. DC voltage sources 2. DC current sources and sinksReading assignment: Howe a
MIT - ELECTRICAL - 6.012
6.012 Microelectronic Devices and Circuits Fall 2005Lecture 231Lecture 23 Frequency Response of Amplifiers (I) CommonSource Amplifier December 1, 2005 Contents: 1. Introduction 2. Intrinsic frequency response of MOSFET 3. Frequency response o
MIT - ELECTRICAL - 6.012
6.012 Microelectronic Devices and Circuits Fall 2005Lecture 241Lecture 24 Frequency Response of Amplifiers (II) OpenCircuit TimeConstant Technique December 6, 2005 Contents: 1. Opencircuit timeconstant technique 2. Application of OCT to commo
MIT - ELECTRICAL - 6.012
6.012 - Microelectronic Devices and Circuits - Fall 2005Lecture 25-1Lecture 25 - Frequency Response of Amplifiers (III) Other Amplifier Stages December 8, 2005 Contents: 1. Frequency response of common-drain amplifier 2. Cascode amplifier Reading
MIT - ELECTRICAL - 6.012
6.012 Microelectronic Devices and Circuits Fall 2005Lecture 261Lecture 26 6.012 Wrapup December 13, 2005 Contents: 1. 6.012 wrapupAnnouncements:Final exam TA review session: December 16, 7:309:30PM, Final exam: December 19, 1:304:30 PM,
MIT - ELECTRICAL - 6.012
6.012 - Microelectronic Devices and Circuits - Fall 2005Lecture 2-1Lecture 2 - Semiconductor Physics (I) September 13, 2005Contents: 1. Silicon bond model: electrons and holes 2. Generation and recombination 3. Thermal equilibrium 4. Intrinsic
MIT - ELECTRICAL - 6.012
6.012 - Microelectronic Devices and Circuits - Fall 2005Lecture 3-1Lecture 3 - Semiconductor Physics (II) Carrier Transport September 15, 2005Contents: 1. Thermal motion 2. Carrier drift 3. Carrier diffusionReading assignment: Howe and Sodin
MIT - ELECTRICAL - 6.012
6.012 - Microelectronic Devices and Circuits - Fall 2005Lecture 4-1Lecture 4 - PN Junction and MOS Electrostatics (I) Semiconductor Electrostatics in Thermal Equilibrium September 20, 2005 Contents: 1. Non-uniformly doped semiconductor in th
MIT - ELECTRICAL - 6.012
6.012 - Microelectronic Devices and Circuits - Fall 2005Lecture 5-1Lecture 5 - PN Junction and MOS Electrostatics (II) pn Junction in Thermal Equilibrium September 22, 2005 Contents: 1. Introduction to pn junction 2. Electrostatics of pn jun