3_1_Homework Questions1-6
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3_1_Homework Questions1-6

Course Number: EE 3, Winter 2010

College/University: UCLA

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UCLA - EE - 3
By KVL: v t Ri t L L di t =0 dtdi t Ri t = v t dt By Laplace Transform: da t = sA s a 0 dt di t = sI s , i 0 =0 dt and cfw_ i t = I s So LsI s RI s = V s I s [ Ls R ] = V s I s 1 = V s Ls Rcfw_ cfw_We know from Pblm 1 that2 Y s s 2 2 2 = = = X s 1 s
UCLA - EE - 3
EETimes.com - IBM demos 100-GHz graphene transistorSaturday06/Feb/2010 10:15 AMFlashEE Times :IBM demos 100-GHz graphene transistorR. Colin Johnson (02/05/2010 12:01 AM EST) URL: http:/www.eetimes.com/showArticle.jhtml?articleID=222601227 PORTLAND, O
UCLA - EE - 3
IEEE Spectrum: Quantum Chip Helps Crack CodeSaturday12/Sep/2009 1:10 PMCOMPUTING/ HARDWARENEWSQuantum Chip Helps Crack CodeExperimental chip does part of code-cracking quantum algorithmBY ANNE-MARIE CORLEY / SEPTEMBER 20093 September 2009Modern cr
UCLA - EE - 3
BASIC COMPUTER ORGANIZATIONCONTROL UNITCONTROL BUSCONTROL BUSI/OARITHMETIC & LOGIC UNIT (ALU)MCUMEMORYMEMORY BUSCENTRAL PROCESSING UNIT (CPU)FRONT SIDE BUSA simple example arithmetic logic unit (2-bit ALU) that does AND, OR, XOR, and addition
UCLA - EE - 3
Recap of Prof. Abidi LectureDopingAdding special impurities to an intrinsic semiconductorN-type: Add Group V element (extra electron) Immobilized impurity becomes positive when electron leaves Increases electron density (orders of magnitude higher) A
UCLA - EE - 3
Field Effect TransistorsMany types: JFET (Junction FET) MOSFET (metal-oxide-semiconductor FET) DGMOSFET (Dual Gate MOSFET) MESFET (Metal-Semiconductor FET) HFET, MODFET, IGBT, FREDFET, ISFET, DNAFETMOSFETs rule.Start with an Analogysmall signalLARG
UCLA - EE - 3
EE3 Module 2: Logic and ComputersThe Binary Number SystemWhy binary? It's easy to design electronic circuits with 2 states (high and low) Each digit in a binary number is a binary digit (or BIT) Each bit can take on only two values (1 and 0). Ex:Binar
UCLA - EE - 3
UCLA - EE - 3
h ttp:/www.op.gatech.edu/about/Overview of Optics and PhotonicsThe field of optics and photonics is all about lightpervasive, primordial, and lifegiving. It is what enables us to see, and a source of energy and life. From mirrors, first used thousands o
UCLA - EE - 3
Photonics.com Printer Friendly ViewWednesday16/Sep/2009 6:52 PMadvertisementfrom photonics.com: 08/31/2009 http:/www.photonics.com/Content/ReadArticle.aspx?ArticleID=39622Plasma Probes Pulp PainlesslyLOS ANGELES, Aug. 31, 2009 - For some, nothing is
UCLA - EE - 3
IEEE Spectrum: Speed Bumps Ahead for Electric-Vehicle ChargingThursday31/Dec/2009 10:10 AMGREEN TECH/ ADVANCED CARSNEWSSpeed Bumps Ahead for Electric-Vehicle ChargingPlugging in cars, even overnight, will strainlocal grids and could boost pollution
UCLA - EE - 101
EE1011/6/10 Homework #1Engineering ElectromagneticsWinter 2010Due: Wednesday Jan 13 2:00 PM Hand in to the TA at beginning of class. No late homework is accepted (see grading policy posted on web). If you cannot make it to class, you must slip the HW
UCLA - EE - 101
UCLA - EE - 101
UCLA - EE - 101
UCLA - EE - 101
EE1012/9/10 Homework #5Engineering ElectromagneticsWinter 2010Due: Wednesday Feb 17 2:00 PM Hand in to the TA at beginning of class. No late homework is accepted (see grading policy posted on web). If you cannot make it to class, you must slip the HW
UCLA - EE - 101
EE1012/17/10 Homework #6Engineering ElectromagneticsWinter 2010Due: Wednesday Feb 25 2:00 PM Hand in to the TA at beginning of class. No late homework is accepted (see grading policy posted on web). If you cannot make it to class, you must slip the HW
UCLA - EE - 101
UCLA - EE - 101
EE1012/24/10 Homework #7Engineering ElectromagneticsWinter 2010Due: Wednesday March 3 2:00 PM Hand in to the TA at beginning of class. No late homework is accepted (see grading policy posted on web). If you cannot make it to class, you must slip the H
UCLA - EE - 101
UCLA - EE - 101
EE1013/3/10 Homework #8Engineering ElectromagneticsWinter 2010Due: Friday March 12 2:00 PM Hand in to my office before 2:00 PM. Problem #1 (25 points)(a) Consider the following transmission line with the reactance X1 placed across the input. It is be
UCLA - EE - 101
UCLA - EE - 101
UCLA - EE - 141
EE141 Principles of Feedback Control (Fall 2009) Solutions to Homework 2 Problem 3.19 (a)Figure 1: Block diagram for 3.19(a)Y G1 = G2 + R 1 + G1 (b)Figure 2: Block diagram for 3.19(b) Reduce the original diagram to:Figure 3: Reduced block diagram for
UCLA - EE - 141
EE141 Principles of Feedback Control (Fall 2009) Solutions to Homework 4 Problem 4.12 (a) 1 (D(R Y ) + W KY ) s2 (s2 + K + D)Y = DR + W 1 D R+ 2 W Y= 2 s +K +D s +K +D Y= In order to track a ramp reference input with constant steady-state error, R(s) = Y=
UCLA - EE - 141
EE141 Principles of Feedback Control (Fall 2009) Solutions to Homework 6 Problem 9.2 (a) The equilibrium pairs for u = 1 is di = i + v = 0 dt dv = i + g (1 v ) = i + (1 v )(1 v 1)(1 v 4) = 0 dt which gives v = 1 3Thus the other two equilibrium pairs are
UCLA - EE - 141
EE141PrinciplesofFeedbackControl(Fall2009) Homework1Solution 2.1b)xaxis k1 x1 k2 x2 k3 ym1Friction,b1m2 m1m2_2.1c)xaxis k1 x1 b1 x2 m1k2m2F m1m2 _ 1 EE141PrinciplesofFeedbackControl(Fall2009) Homework1Solution 2.10) Foranidealop
UCLA - EE - 141
EE141 Principles of Feedback Control (Fall 2009) Solutions to Homework 3 _3.38) 2signchangesinthefirstcolumn=>2rootsintheRHP=>unstable.2signchangesinthefirstcolumn=>2rootsintheRHP=>unstable.3.39) 2signchangesinthefirstcolumn=>2rootswithpositivere
UCLA - EE - 141
EE141 Principles of Feedback Control (Fall 2009) Solutions to Homework 5 5.2d) 5.2e) Assumingthepoleslieat1,2+2iand22i: Centerofasymptotes=1 Anglesofasymptotes=60,180 Angleofdeparture:56.3EE141 Principles of Feedback Control (Fall 2009) Solutions to
UCLA - EE - 141
EE141 Principles of Feedback Control (Fall 2009) Solutions to Homework 7 6.4c) Magnitude: Atw=1,theasymptoteapproaches12.3dB. Breakpointsat:1,2,5,6,and10rad/sec. Startingslope:20dB/dec. Endingslope:40dB/dec. Phase: Startingphase:90degrees. Endingphase:180
USC - EE - 338
For reprint orders, please contact: reprints@futuremedicine.comE DITORIALPotential uses of carbon nanotubes in the medical field: how worried should patients be?the same novel properties that make CNTs interesting raise concerns about their potential a
USC - BME - 302L
CascadedTransistorAmplifiersCascadedTransistorAmplifiersObjective: after learning this section, you will be able to: Explain the rationale for using cascaded transistor amplifiers. Compute the input resistance, output resistance, voltage gain and load v
USC - BME - 302L
CommonCollectorandCommon BaseAmplifiersCommonCollectorandCommonBase AmplifiersObjective: after learning this section, you will be able to: Draw a common-collector (CC) amplifier; Derive the ac equivalent of a CC amplifier; Retrieve the input resistance,
USC - BME - 302L
CommonEmitterAmplifierCommonEmitterAmplifierObjective: after learning this section, you will be able to: Draw a common-emitter (CE) amplifier; Derive the dc equivalent of a CE amplifier and compute the dc currents and voltages; Derive the ac equivalent
USC - BME - 302L
SmallSignalTransistorAmplifiersSmallSignalTransistorAmplifiersObjective: after learning this section, you will be able to: Use the proper notations for ac transistor currents and voltages; Explain small-signal operation; Derive the dc and ac equivalents
USC - BME - 302L
LAB 6: BIPOLAR JUNCTION TRANSISTOR TRANSISTOR SWITCH I Purpose and BackgroundThis laboratory has three objectives: 1. To measure the collector characteristic (VCE - IC curve) for a bipolar junction transistor; 2. To build and test three transistor switch
USC - BME - 302L
TransistorBiasCircuitsLesson 7TransistorBiasCircuitsObjective: after learning this section, you will be able to: Explain dc bias; Derive the dc load line and the Q point; Explain linear operation and distortion; Analyze a base bias circuit and explain
USC - BME - 302L
MedicalTransducersLesson 11MedicalTransducersObjective: After learning this section, you will be able to: Explain the operation of a bioelectrode; Compute the impedance of an electric model of a bioelectrode; Explain the operation of a thermistor; Com
USC - EE - 357
Chapter 5: BJT Small-Signal AnalysisSemI0809/rosdiyanaContents CommonEmitterfixedbiasconfiguration Voltagedividerbias CEEmitterbias Emitterfollowerconfiguration Commonbaseconfiguration Collectorfeedbackconfiguration HybridequivalentcircuitandmodelBJT
USC - BME - 302L
Memo To: From: Date: Re: Martha J. Townsend Lauren Hickey April 2, 2010 Status Report on spcaLA projectProjectWe recently discussed the scope of our project with you and how we should not limit our vision to their resources. With this in mind when we vi
USC - EE - 338
Department of Biomedical EngineeringPetition Form for BS, MS, and PhD studentsTodays Date: Name: Email: Semester Entered: Affiliated Department: circle one BME Other: Degree Program: circle one BMEBME(Biochemical)Catalog Year: 10 digit USC ID: Local P
USC - EE - 357
EE 357 Unit 4b EE 357 Unit 4bCF Assembly BasicsOPERATIONS AND AND INSTRUCTIONS Mark Redekopp, All rights reserved Mark Redekopp, All rights reservedColdfire Instruction Classes Instruction Classes Data Transfer Move data between processor & memory M
USC - EE - 357
EE 357 Unit 4aInstruction Set Architecture Mark Redekopp, All rights reservedInstruction Set Architecture (ISA) Defines the software interface of the computer system Instruction set is the vocabulary that the HW can understand and that SW is composed
USC - EE - 357
Instruction Set Architecture (ISA) Set Architecture (ISA) Defines the software interface of the computer system Instruction set is the _ that the HW can understand and that SW is composed with 2 approaches CISC = Complex instruction set computer _EE 35
USC - EE - 357
EE 357 Unit 3IEEE 754 Floating Point Representation Floating Point Arithmetic Mark Redekopp, All rights reservedFloating Point Used to represent very small numbers (fractions) and very large numbers Avogadros Number: +6.0247 * 1023 Plancks Constant:
USC - EE - 357
Floating Point Point Used to represent very small numbers to represent very small numbers (fractions) and very large numbersEE 357 Unit EE 357 Unit 3IEEE 754 Floating Point Representation Floating Point Arithmetic Avogadros Number: +6.0247 * 1023 Plan
USC - EE - 357
EE 357 Unit 2bDivision Techniques Mark Redekopp, All rights reservedRestoring Division Non-Restoring DivisionDIVISION TECHNIQUES Mark Redekopp, All rights reservedBinary Division Performed using same rules as decimal divisionQuotientDivisor0100
USC - EE - 357
EE 357 Unit 2aMultiplication Techniques Mark Redekopp, All rights reservedLearning Objectives Perform by hand the different methods for unsigned and signed multiplication Understand the various digital implementations of a multiplier along with their
USC - EE - 357
Learning Objectives Objectives EE 357 Unit 2a EE 357 Unit 2aMultiplication Techniques Perform by hand the different methods for by hand the different methods for unsigned and signed multiplication Understand the various digital the various digital implem
USC - EE - 357
EE 357 Unit 1Fixed Point Systems and Arithmetic Mark Redekopp, All rights reservedLearning Objectives Understand the size and systems used by the underlying HW when a variable is declared in a SW program Understand and be able to find the decimal valu
USC - EE - 357
Learning Objectives Objectives EE 357 Unit EE 357 Unit 1Fixed Point Systems and Arithmetic Understand the size and systems used by the size and systems used by the underlying HW when a variable is declared in SW program declared in a SW program Understan
USC - EE - 357
EE 357 Unit 0Class Introduction Basic Hardware Organization Mark Redekopp, All rights reservedComputer Systems Abstractions CS 101,102 Programming with highlevel languages (HLLs) like C / C+/ JavaApplications C / C+ / Java EE 101,201 Digital hardw
USC - EE - 357
BME 402, Spring 2010 Review sheet for Exam 1 History of neuroscience You should know the main steps (and missteps) along the path to the development of the modern view of brain function, including primary discoveries and/or contributions and approximate t
USC - BME - 402
IonChannelsK+channeltop viewside viewselectivity filterSelectivityChannelaslinearresistorNotreallylinearActslikehigher conductancewhen flowingfromhigh[C]to low[C]Determining K+ channel activation curves from K+ channel currents often requires the
USC - BME - 402
Phrenology1GolgiCajal234Ondendrites56BrodmannsAreas7TheModernView8TheNeuron9GlialCellsmyelin101112ratecode131415
USC - BME - 402
Whyhaveabrain?Whohasabrain?TheBrainasTechnologySidehttp:/da-atlases.biostr.washington.edu/cgi-bin/DA/imageformLeftTheBrainasTechnologyRearTheBrainasTechnologyFrontComparingTechnologies:Computersarebuilt fromcircuits,whicharemadeoutoftransistors
USC - BME - 402
Hodgkin-Huxley model of the AP Here are the equations from which you can calculate n , n, m ,m,and h , h, wheren(V ) =0.01(V + 60) exp( (V + 60) /10) 1 0.1(V + 45) exp( (V + 45) /10) 1n(V ) = 0.125 exp( (V + 70) / 80)m(V ) =m(V ) = 4 exp( (V +
USC - BME - 402
BME 402, Hodgkin-Huxley Project Due 5 pm, Friday 3/12/10 Experiments on the Hodgkin-Huxley model of the AP The project builds on the voltage-clamp experiment of Homework 3. Conceptually, moving from voltage clamp to current clamp is like adding a new colu
USC - BME - 402
t(ms)0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 1.25 1.30 1.35 1.40 1.45 1.50 1.55 1.60 1.65 1.70 1.75 1.80 1.85 1.90 1.95 2.00 2.05 2.10 2.15 2.20 2.25 2.30 2.35 2.40 2.45
USC - BME - 302L
BME402Spring2010 Question1 @t=0,gNA=5nS C=12pF Vm@t=5ms? Rememberforadifferentialequationofthefollowingform: dV/dt=(V+V)/Tau thesolutionis: V(t)=Det/Tau+A WewillsolvetheKCLequationfordV/dt (VmEl)gl+(VmENa)gNa+C(dVm/dt)=0 dVm=Vm+(El*gl/(gl+gNa)+(ENa*gNa/(g
USC - EE - 338
*f"i.f' L.,J'a .\ il v-\+ il:1tlIti'l.ctxcfw_?'cfw_fur.GIiFnrettt-.t: 1g;t_-cfw_/\q. e,kt*q tr-rt-' t- g> L|J t Y. &'t -llt.I!tr1 folI Io.f, *,F1,.".-.cfw_I9f1r.:cfw_; ucfw_'" ,.fA-: L t,'*tl'/-0-=':t.tf"',tI ir'n,