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TheScienceandEngineeringof Materials,4thed DonaldR.AskelandPradeepP.Phul Chapter3AtomicandIonic Arrangements 1 ObjectivesofChapter3 Tolearnclassificationofmaterialsbased onatomic/ionicarrangements Todescribethearrangementsincrystalline solidsbasedonlattice,basis,andcrystal structure 2 ChapterOutline 3.1ShortRangeOrderversusLongRange Order 3.2AmorphousMaterials:Principlesand...

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TheScienceandEngineeringof Materials,4thed DonaldR.AskelandPradeepP.Phul Chapter3AtomicandIonic Arrangements 1 ObjectivesofChapter3 Tolearnclassificationofmaterialsbased onatomic/ionicarrangements Todescribethearrangementsincrystalline solidsbasedonlattice,basis,andcrystal structure 2 ChapterOutline 3.1ShortRangeOrderversusLongRange Order 3.2AmorphousMaterials:Principlesand TechnologicalApplications 3.3Lattice,UnitCells,Basis,andCrystal Structures 3.4AllotropicorPolymorphic Transformations 3.5Points,Directions,andPlanesinthe UnitCell 3.6InterstitialSites 3.7CrystalStructuresofIonicMaterials 3.8CovalentStructures 3 Section3.1Short RangeOrderversusLongRange Order ShortrangeorderTheregularandpredictablearrangementof theatomsoverashortdistanceusuallyoneortwoatom spacings. Longrangeorder(LRO)Aregularrepetitivearrangementof atomsinasolidwhichextendsoveraverylargedistance. BoseEinsteincondensate(BEC)Anewlyexperimentally verifiedstateofamatterinwhichagroupofatomsoccupythe samequantumgroundstate. 4 Figure3.1Levelsof atomicarrangementsin materials:(a)Inert monoatomicgaseshave noregularorderingof atoms:(b,c)Some materials,includingwater vapor,nitrogengas, amorphoussiliconand silicateglasshaveshort rangeorder.(d)Metals, alloys,manyceramicsand somepolymershave regularorderingof atoms/ionsthatextends throughthematerial. (c) 2003 Brooks/Cole Publishing / Thomson Learning 5 Figure3.2BasicSi0 tetrahedroninsilicate glass. (c) 2003 Brooks/Cole Publishing / Thomson Learning 6 Figure3.3Tetrahedral arrangementofCHbondsin polyethylene. (c) 2003 Brooks/Cole Publishing / Thomson Learning 7 Figure3.4(a)Photographofasilicon singlecrystal.(b)Micrographofa polycrystallinestainlesssteelshowing grainsandgrainboundaries(Courtesy Dr.M.Hua,Dr.I.Garcia,andDr.A.J. Deardo.) 8 Figure3.5Liquidcrystaldisplay.Thesematerialsareamorphous inonestateandundergolocalizedcrystallizationinresponseto anexternalelectricfieldandarewidelyusedinliquidcrystal displays.(CourtesyofNickKoudis/PhotoDisc/GettyImages.) 9 (c) 2003 Brooks/Cole Publishing / Thomson Learning Figure3.7Classificationofmaterialsbasedonthetypeofatomicorder. 10 Section3.2 AmorphousMaterials:Principlesand TechnologicalApplications AmorphousmaterialsMaterials,includingglasses,thathaveno longrangeorder,orcrystalstructure. GlassesSolid,noncrystallinematerials(typicallyderivedfrom themoltenstate)thathaveonlyshortrangeatomicorder. GlassceramicsAfamilyofmaterialstypicallyderivedfrom molteninorganicglassesandprocessedintocrystallinematerials withveryfinegrainsizeandimprovedmechanicalproperties. 11 (c) 2003 Brooks/Cole Publishing / Thomson Learning Figure3.9(b)Thisfigureshowsaschematicoftheblowstretchprocess usedforfabricationofastandardtwoliterPET(polyethyleneterephthalate) bottlefromapreform.Thestressinducedcrystallizationleadsto formationofsmallcrystalsthathelpreinforcetheremainingamorphous matrix. 12 (c) 2003 Brooks/Cole Publishing / Thomson Learning Figure3.10Atomicarrangementsincrystallinesiliconandamorphous silicon.(a)Amorphoussilicon.(b)Crystallinesilicon.Notethe variationintheinteratomicdistanceforamorphoussilicon. 13 Section3.3 Lattice,UnitCells,Basis,andCrystal Structures LatticeAcollectionofpointsthatdividespaceintosmaller equallysizedsegments. BasisAgroupofatomsassociatedwithalatticepoint. UnitcellAsubdivisionofthelatticethatstillretainstheoverall characteristicsoftheentirelattice. AtomicradiusTheapparentradiusofanatom,typically calculatedfromthedimensionsoftheunitcell,usingclose packeddirections(dependsuponcoordinationnumber). PackingfactorThefractionofspaceinaunitcelloccupiedby atoms. 14 Figure3.11The fourteentypesof Bravaislattices groupedinseven crystalsystems.The actualunitcellfora hexagonalsystemis showninFigures3.12 and3.16. (c) 2003 Brooks/Cole Publishing / Thomson Learning 15 16 Figure3.12 Definitionofthe latticeparameters andtheirusein cubic, orthorhombic,and hexagonalcrystal systems. (c) 2003 Brooks/Cole Publishing / Thomson Learning 17 Figure3.13(a) Illustrationshowing sharingoffaceand corneratoms.(b)The modelsforsimple cubic(SC),body centeredcubic(BCC), andfacecentered cubic(FCC)unitcells, assumingonlyone atomperlatticepoint. (c) 2003 Brooks/Cole Publishing / Thomson Learning 18 Example3.1Determining theNumberofLatticePointsinCubicCrystal Systems Determinethenumberoflatticepointspercellinthecubiccrystal systems.Ifthereisonlyoneatomlocatedateachlatticepoint,calculate thenumberofatomsperunitcell. Example3.1SOLUTION IntheSCunitcell:latticepoint/unitcell=(8corners)1/8=1 InBCCunitcells:latticepoint/unitcell=(8 corners)1/8+(1center)(1)=2 InFCCunitcells:latticepoint/unitcell=(8 corners)1/8+(6faces)(1/2)=4 Thenumberofatomsperunitcellwouldbe1,2,and4,forthesimple cubic,bodycenteredcubic,andfacecenteredcubic,unitcells, respectively. 19 Example3.2 DeterminingtheRelationshipbetweenAtomic RadiusandLatticeParameters Determinetherelationshipbetweentheatomicradiusandthe latticeparameterinSC,BCC,andFCCstructureswhenone atomislocatedateachlatticepoint. (c) 2003 Brooks/Cole Publishing / Thomson Learning Figure3.14TherelationshipsbetweentheatomicradiusandtheLattice parameterincubicsystems(forExample3.2). 20 Example3.2SOLUTION ReferringtoFigure3.14,wefindthatatomstouchalongthe edgeofthecubeinSCstructures. a0 = 2r InBCCstructures,atomstouchalongthebodydiagonal.There aretwoatomicradiifromthecenteratomandoneatomicradius fromeachofthecorneratomsonthebodydiagonal,so a0 4r = 3 InFCCstructures,atomstouchalongthefacediagonalofthe cube.Therearefouratomicradiialongthislengthtworadii fromthefacecenteredatomandoneradiusfromeachcorner, so: a0 4r = 2 21 (c) 2003 Brooks/Cole Publishing / Thomson Learning Figure3.15Illustrationofcoordinationsin(a)SCand(b)BCCunitcells. SixatomstoucheachatominSC,whiletheeightatomstoucheach atomintheBCCunitcell. 22 Example3.3 CalculatingthePackingFactor CalculatethepackingfactorfortheFCCcell. Example3.3SOLUTION InaFCCcell,therearefourlatticepointspercell;ifthereisoneatom perlatticepoint,therearealsofouratomspercell.Thevolumeofone atomis4r3/3andthevolumeoftheunitcellis. a 3 0 43 (4 atoms/cell)( r ) 3 Packing Factor = a03 Since, for FCC unit cells, a 0 = 4r/ 43 (4)( r ) 3 Packing Factor = = 3 ( 4r / 2 ) 23 2 0.74 18 Example3.4Determining theDensityofBCCIron DeterminethedensityofBCCiron,whichhasalatticeparameterof 0.2866nm. Example3.4SOLUTION Atoms/cell=2,a0=0.2866nm=2.866 108cm Atomicmass=55.847g/mol 3 Volumeofunitcell==(2.866 0 a 108cm)3=23.54 1024cm3/cell AvogadrosnumberNA=6.02 1023atoms/mol (number of atoms/cell)(atomic mass of iron) Density = (volume of unit cell)(Avogadro' s number) (2)(55.847) 3 = = 7.882 g / cm (23.54 10 24 )(6.02 10 23 ) 24 (c) 2003 Brooks/Cole Publishing / Thomson Learning Figure3.16Thehexagonalclosepacked(HCP)structure(left)andits unitcell. 25 26 Section3.4 AllotropicorPolymorphic Transformations AllotropyThecharacteristicofanelementbeingabletoexistin morethanonecrystalstructure,dependingontemperatureand pressure. PolymorphismCompoundsexhibitingmorethanonetypeof crystalstructure. 27 Figure3.17Oxygengassensorsusedincarsand otherapplicationsarebasedonstabilizedzirconia compositions.(ImagecourtesyofBoschRobert BoschGmbH.) 28 Example3.5Calculating VolumeChangesinPolymorphsofZirconia Calculatethepercentvolumechangeaszirconiatransformsfrom atetragonaltomonoclinicstructure.[9]Thelatticeconstantsforthe monoclinicunitcellsare:a=5.156,b=5.191,andc=5.304, respectively.Theangleforthemonoclinicunitcellis98.9.The latticeconstantsforthetetragonalunitcellarea=5.094andc= 5.304,respectively.[10]Doesthezirconiaexpandorcontract duringthistransformation?Whatistheimplicationofthis transformationonthemechanicalpropertiesofzirconiaceramics? 29 Example3.5SOLUTION ThevolumeofatetragonalunitcellisgivenbyV=a2c= (5.094)2(5.304)=134.333. ThevolumeofamonoclinicunitcellisgivenbyV=abcsin =(5.156)(5.191)(5.304)sin(98.9)=140.253. Thus,thereisanexpansionoftheunitcellasZrO2transformsfroma tetragonaltomonoclinicform. Thepercentchangeinvolume =(finalvolumeinitialvolume)/(initialvolume)100 =(140.25134.333)/140.253*100=4.21%. Mostceramicsareverybrittleandcannotwithstandmorethana 0.1%changeinvolume.TheconclusionhereisthatZrO2ceramicscannot beusedintheirmonoclinicformsince,whenzirconiadoestransformtothe tetragonalform,itwillmostlikelyfracture.Therefore,ZrO2isoftenstabilized inacubicformusingdifferentadditivessuchasCaO,MgO,andY2O3. 30 Example3.6Designing aSensortoMeasureVolume Change Tostudyhowironbehavesatelevatedtemperatures,wewouldliketo designaninstrumentthatcandetect(witha1%accuracy)thechange involumeofa1cm3ironcubewhentheironisheatedthroughits polymorphictransformationtemperature.At911oC,ironisBCC,witha latticeparameterof0.2863nm.At913oC,ironisFCC,withalattice parameterof0.3591nm.Determinetheaccuracyrequiredofthe measuringinstrument. Example3.6SOLUTION ThevolumeofaunitcellofBCCironbeforetransformingis: VBCC==(0.2863nm)3=0.023467nm3 3 a0 31 Example3.6SOLUTION(Continued) ThevolumeoftheunitcellinFCCironis: 3 VFCC==(0.3591nm)3=0.046307nm3 a 0 Butthisisthevolumeoccupiedbyfourironatoms,as therearefouratomsperFCCunitcell.Therefore,wemust comparetwoBCCcells(withavolumeof2(0.023467)= 0.046934nm3)witheachFCCcell.Thepercentvolumechange duringtransformationis: (0.046307 - 0.046934) Volume change = 100 = 1.34% 0.046934 The1cm3cubeofironcontractsto10.0134=0.9866 cm3aftertransforming;therefore,toassure1%accuracy,the instrumentmustdetectachangeof: V=(0.01)(0.0134)=0.000134cm3 32 Section3.5Points, Directions,andPlanesintheUnitCell MillerindicesAshorthandnotationtodescribecertain crystallographicdirectionsandplanesinamaterial.Denotedby []brackets.Anegativenumberisrepresentedbyabaroverthe number. DirectionsofaformCrystallographicdirectionsthatallhavethe samecharacteristics,althoughtheirsenseisdifferent.Denoted byhibrackets. RepeatdistanceThedistancefromonelatticepointtothe adjacentlatticepointalongadirection. LineardensityThenumberoflatticepointsperunitlengthalong adirection. PackingfractionThefractionofadirection(linearpacking fraction)oraplane(planarpackingfactor)thatisactually coveredbyatomsorions. 33 Figure3.18Coordinatesofselectedpointsin theunitcell.Thenumberreferstothe distancefromtheoriginintermsoflattice parameters. 34 Example3.7 DeterminingMillerIndicesofDirections DeterminetheMillerindicesofdirectionsA,B,andCin Figure3.19. Figure3.19Crystallographic directionsandcoordinates(for Example3.7). (c) 2003 Brooks/Cole Publishing / Thomson Learning 35 Example3.7SOLUTION DirectionA 1.Twopointsare1,0,0,and0,0,0 2.1,0,0,0,0,0=1,0,0 3.Nofractionstoclearorintegerstoreduce 4.[100] DirectionB 1.Twopointsare1,1,1and0,0,0 2.1,1,1,0,0,0=1,1,1 3.Nofractionstoclearorintegerstoreduce 4.[111] DirectionC 1.Twopointsare0,0,1and1/2,1,0 2.0,0,11/2,1,0=1/2,1,1 3.2(1/2,1,1)=1,2,2 4. [ 1 2 2] 36 (c) 2003 Brooks/Cole Publishing / Thomson Learning Figure3.20Equivalencyofcrystallographicdirectionsofaformin cubicsystems. 37 38 Figure3.21 Determiningthe repeatdistance, lineardensity,and packingfraction for[110]direction inFCCcopper. (c) 2003 Brooks/Cole Publishing / Thomson Learning 39 Example3.8 DeterminingMillerIndicesofPlanes DeterminetheMillerindicesofplanesA,B,andCinFigure3.22. Figure3.22 Crystallographicplanes andintercepts(forExample 3.8) (c) 2003 Brooks/Cole Publishing / Thomson Learning 40 Example3.8SOLUTION PlaneA 1.x=1,y=1,z=1 2.1/x=1,1/y=1,1/z=1 3.Nofractionstoclear 4.(111) PlaneB 1.Theplaneneverinterceptsthezaxis,sox=1,y=2,andz= 2.1/x =1,1/y=1/2,1/z=0 3.Clearfractions: 1/x=2,1/y=1,1/z=0 4.(210) PlaneC 1.Wemustmovetheorigin,sincetheplanepassesthrough0,0, 0.Letsmovetheoriginonelatticeparameterintheydirection.Then,x =,y=1,andz= 2.1/x=0,1/y=1,1/z=0 3.Nofractionstoclear. 4. ( 0 1 0) 41 42 Example3.9Calculating thePlanarDensityandPackingFraction Calculatetheplanardensityandplanarpackingfractionforthe (010)and(020)planesinsimplecubicpolonium,whichhasa latticeparameterof0.334nm. Figure3.23The planerdensitiesofthe (010)and(020)planes inSCunitcellsare notidentical(for Example3.9). (c) 2003 Brooks/Cole Publishing / Thomson Learning 43 Example3.9SOLUTION Thetotalatomsoneachfaceisone.Theplanardensityis: atom per face 1 atom per face Planar density (010) = = 2 area of face (0.334) = 8.96 atoms/nm 2 = 8.96 1014 atoms/cm 2 Theplanarpackingfractionisgivenby: area of atoms per face (1 atom) (r ) Packing fraction (010) = = area of face (a 0) 2 r 2 = = 0.79 2 ( 2r ) However,noatomsarecenteredonthe(020)planes.Therefore, theplanardensityandtheplanarpackingfractionarebothzero. The(010)and(020)planesarenotequivalent! 44 2 Example3.10Drawing DirectionandPlane [12 1] [ 2 10] Draw(a)thedirectionand(b)theplaneinacubicunit cell. Figure3.24 Constructionofa (a)directionand (b)planewithina unitcell(for Example3.10) (c) 2003 Brooks/Cole Publishing / Thomson Learning 45 Example3.10SOLUTION a.Becauseweknowthatwewillneedtomoveinthenegativey direction,letslocatetheoriginat0,+1,0.Thetailofthe directionwillbelocatedatthisneworigin.Asecondpointonthe directioncanbedeterminedbymoving+1inthexdirection,2in theydirection,and+1inthezdirection[Figure3.24(a)]. b.Todrawintheplane,firsttakereciprocalsoftheindices [ 2 10] toobtaintheintercepts,thatis: x=1/2=1/2y=1/1=1z=1/0= Sincethexinterceptisinanegativedirection,andwewishto drawtheplanewithintheunitcell,letsmovetheorigin+1inthe xdirectionto1,0,0.Thenwecanlocatethexinterceptat1/2 andtheyinterceptat+1.Theplanewillbeparalleltothezaxis [Figure3.24(b)]. 46 Figure3.25MillerBravaisindices areobtainedforcrystallographic planesinHCPunitcellsbyusinga fouraxiscoordinatesystem.The planeslabeledAandBandthe directionlabeledCandDarethose discussedinExample3.11. (c) 2003 Brooks/Cole Publishing / Thomson Learning 47 (c) 2003 Brooks/Cole Publishing / Thomson Learning Figure3.26TypicaldirectionsintheHCPunitcell,usingboththreeand fouraxissystems.Thedashedlinesshowthatthe[1210]directionis equivalenttoa[010]direction. 48 Example3.11Determining theMillerBravaisIndicesforPlanesand Directions DeterminetheMillerBravaisindicesforplanesAandBand directionsCandDinFigure3.25. Figure3.25MillerBravais indicesareobtainedfor crystallographicplanesinHCP unitcellsbyusingafouraxis coordinatesystem.Theplanes labeledAandBandthe directionlabeledCandDare thosediscussedinExample 3.11. (c) 2003 Brooks/Cole Publishing / Thomson Learning 49 Example3.11SOLUTION PlaneA 1.a1=a2=a3=,c =1 2.1/a1=1/a2=1/a3=0,1/c=1 3.Nofractionstoclear 4.(0001) PlaneB 1.a1=1,a2=1,a3=1/2,c=1 2.1/a1=1,1/a2=1,1/a3=2,1/c=1 3.Nofractionstoclear (11 2 1) 4. DirectionC 1.Twopointsare0,0,1and1,0,0. 2.0,0,1,1,0,0=1,0,1 3.Nofractionstoclearorintegerstoreduce. [ 1 01] or [2113] 4. 50 Example3.11SOLUTION(Continued) DirectionD 1.Twopointsare0,1,0and1,0,0. 2.0,1,0,1,0,0=1,1,0 3.Nofractionstoclearorintegerstoreduce. 4. [ 1 10] or [ 1 100] 51 52 Figure3.27The ABABABstacking sequenceofclose packedplanes producestheHCP structure. (c) 2003 Brooks/Cole Publishing / Thomson Learning 53 (c) 2003 Brooks/Cole Publishing / Thomson Learning Figure3.28TheABCABCABCstackingsequenceofclose packedplanesproducestheFCCstructure. 54 Section3.6Interstitial Sites InterstitialsitesLocationsbetweenthenormalatomsorions inacrystalintowhichanotherusuallydifferentatomorionis placed.Typically,thesizeofthisinterstitiallocationissmaller thantheatomorionthatistobeintroduced. CubicsiteAninterstitialpositionthathasacoordinationnumber ofeight.Anatomorioninthecubicsitetoucheseightother atomsorions. OctahedralsiteAninterstitialpositionthathasacoordination numberofsix.Anatomorionintheoctahedralsitetouchessix otheratomsorions. TetrahedralsiteAninterstitialpositionthathasacoordination numberoffour.Anatomorioninthetetrahedralsitetouches fourotheratomsorions. 55 (c) 2003 Brooks/Cole Publishing / Thomson Learning Figure3.29Thelocationoftheinterstitialsitesincubicunitcells.Only representativesitesareshown. 56 Example3.12Calculating OctahedralSites Calculatethenumberofoctahedralsitesthatuniquelybelongto oneFCCunitcell. Example3.12SOLUTION Theoctahedralsitesincludethe12edgesoftheunitcell,with thecoordinates 1 ,0,0 2 1 0, ,0 2 1 0,0, 2 1 1 1 ,1,0 ,0,1 ,1,1 2 2 2 1 1 1 1, ,0 1, ,1 0, ,1 2 2 2 1 1 1 1,0, 1,1, 0,1, 2 2 2 plusthecenterposition,1/2,1/2,1/2. 57 Example3.12SOLUTION(Continued) Eachofthesitesontheedgeoftheunitcellissharedbetween fourunitcells,soonly1/4ofeachsitebelongsuniquelytoeach unitcell. Therefore,thenumberofsitesbelonginguniquelytoeachcellis: (12edges)(1/4percell)+1centerlocation =4octahedralsites 58 59 Example3.13Designof aRadiationAbsorbingWall Wewishtoproducearadiationabsorbingwallcomposedof10,000 leadballs,each3cmindiameter,inafacecenteredcubic arrangement.Wedecidethatimprovedabsorptionwilloccurifwe fillinterstitialsitesbetweenthe3cmballswithsmallerballs.Design thesizeofthesmallerleadballsanddeterminehowmanyare needed. Figure3.30Calculationofan octahedralinterstitialsite(for Example3.13). (c) 2003 Brooks/Cole Publishing / Thomson Learning 60 Example3.13SOLUTION First,wecancalculatethediameteroftheoctahedral siteslocatedbetweenthe3cmdiameterballs.Figure3.30shows thearrangementoftheballsonaplanecontaininganoctahedral site. LengthAB=2R+2r=2R 2 r=RR=(1)R 2 r/R=0.414 2 ThisisconsistentwithTable36.Sincer=R=0.414,theradiusof thesmallleadballsis r=0.414*R=(0.414)(3cm/2)=0.621cm. FromExample312,wefindthattherearefouroctahedralsitesin theFCCarrangement,whichalsohasfourlatticepoints. Therefore,weneedthesamenumberofsmallleadballsaslarge leadballs,or10,000smallballs. 61 Section3.7Crystal StructuresofIonicMaterials Factorsneedtobeconsideredinordertounderstandcrystal structuresofionicallybondedsolids: IonicRadii ElectricalNeutrality ConnectionbetweenAnionPolyhedra VisualizationofCrystalStructuresUsingComputers 62 (c) 2003 Brooks/Cole Publishing / Thomson Learning Figure3.31Connectionbetweenanionpolyhedra.Differentpossible connectionsincludesharingofcorners,edges,orfaces.Inthisfigure, examplesofconnectionsbetweentetrahedraareshown. 63 (c) 2003 Brooks/Cole Publishing / Thomson Learning Figure3.32(a)Thecesiumchloridestructure,aSCunitcellwithtwo ions(Cs+andCI)perlatticepoint.(b)Thesodiumchloridestructure,a FCCunitcellwithtwoions(Na++CI)perlatticepoint.Note:Ionsizes nottoscale. 64 Example3.14Radius RatioforKCl Forpotassiumchloride(KCl),(a)verifythatthecompoundhasthe cesiumchloridestructureand(b)calculatethepackingfactorforthe compound. Example3.14SOLUTION a.FromAppendixB,rK+=0.133nmandrCl=0.181nm,so: rK+/rCl=0.133/0.181=0.735 Since0.732<0.735<1.000,thecoordinationnumberforeachtype ofioniseightandtheCsClstructureislikely. 65 Example3.14SOLUTION(Continued) b.Theionstouchalongthebodydiagonaloftheunitcell,so: a0=2rK++2rCl=2(0.133)+2(0.181)=0628nm a0=0.363nm 43 43 rK + (1 K ion) + rCl (1 Cl ion) 3 Packing factor = 3 3 a0 4 4 3 (0.133) + (0.181) 3 3 =3 = 0.725 3 (0.363) 66 Example3.15 IllustratingaCrystalStructureandCalculating Density ShowthatMgOhasthesodiumchloridecrystalstructureand calculatethedensityofMgO. Example3.15SOLUTION FromAppendixB,rMg+2=0.066nmandrO2=0.132nm,so: rMg+2/rO2=0.066/0.132=0.50 Since0.414<0.50<0.732,thecoordinationnumberfor eachionissix,andthesodiumchloridestructureispossible. 67 Example3.15SOLUTION Theatomicmassesare24.312and16g/molformagnesiumand oxygen,respectively.Theionstouchalongtheedgeofthecube, so: a0 =2rMg+2+2rO2=2(0.066)+2(0.132) =0.396nm=3.96 108cm (4Mg +2 )(24.312) + (4O -2 )(16) = = 4.31g / cm3 (3.96 10 8 cm)3 (6.02 10 23 ) 68 (c) 2003 Brooks/Cole Publishing / Thomson Learning Figure3.33(a)Thezincblendeunitcell,(b)planview. 69 Example3.16 CalculatingtheTheoreticalDensityof GaAs Thelatticeconstantofgalliumarsenide(GaAs)is5.65. ShowthatthetheoreticaldensityofGaAsis5.33g/cm3. Example3.16SOLUTION ForthezincblendeGaAsunitcell,therearefourGaand fourAsatomsperunitcell. Fromtheperiodictable(Chapter2): Eachmole(6.023 1023atoms)ofGahasamassof69.7g. Therefore,themassoffourGaatomswillbe(4*69.7/6.023 1023)g. 70 Example3.16SOLUTION(Continued) Eachmole(6.023 1023atoms)ofAshasamassof74.9g. Therefore,themassoffourAsatomswillbe(4* 74.9/6.023 1023)g.Theseatomsoccupyavolumeof(5.65 108)3cm3. mass 4(69.7 + 74.9) / 6.023 10 23 density = = volume (5.65 10 8 cm)3 Therefore,thetheoreticaldensityofGaAswillbe5.33g/cm3. 71 (c) 2003 Brooks/Cole Publishing / Thomson Learning Figure3.34(a)Fluoriteunitcell,(b)planview. 72 (c) 2003 Brooks/Cole Publishing / Thomson Learning Figure3.35TheperovskiteunitcellshowingtheAandBsitecationsand oxygenionsoccupyingthefacecenterpositionsoftheunitcell.Note: Ionsarenotshowtoscale. 73 Figure3.36CrystalstructureofanewhighTcceramic superconductorbasedonayttriumbariumcopperoxide. Thesematerialsareunusualinthattheyareceramics,yetat lowtemperaturestheirelectricalresistancevanishes.(Source: ill.fr/dif/3Dcrystals/superconductor.html;M.Hewat1998.) 74 (c) 2003 Brooks/Cole Publishing / Thomson Learning Figure3.37Corundumstructureofalphaalumina(AI203). 75 Section3.8Covalent Structures Covalentlybondedmaterialsfrequentlyhavecomplexstructures inordertosatisfythedirectionalrestraintsimposedbythe bonding. Diamondcubic(DC)Aspecialtypeoffacecenteredcubic crystalstructurefoundincarbon,silicon,andothercovalently bondedmaterials. 76 (c) 2003 Brooks/Cole Publishing / Thomson Learning Figure3.38(a)Tetrahedronand(b)thediamondcubic(DC)unit cell.Thisopenstructureisproducedbecauseoftherequirementsof covalentbonding. 77 Example3.17 DeterminingthePackingFactorforDiamond CubicSilicon Determinethepackingfactorfordiamondcubicsilicon. (c) 2003 Brooks/Cole Publishing / Thomson Learning Figure3.39Determining therelationshipbetween latticeparameterand atomicradiusinadiamond cubiccell(forExample 3.17). 78 Example3.17SOLUTION Wefindthatatomstouchalongthebodydiagonalofthecell (Figure3.39).Althoughatomsarenotpresentatalllocations alongthebodydiagonal,therearevoidsthathavethesame diameterasatoms.Consequently: 3a 0 = 8r 4 (8 atoms/cell)( r 3 ) 3 Packing factor = 3 a0 43 (8)( r ) 3 = (8r / 3 ) 3 = 0.34 Comparedtoclosepackedstructuresthisisarelativelyopenstructure. 79 Example3.18 CalculatingtheRadius,Density,andAtomic MassofSilicon ThelatticeconstantofSiis5.43.Whatwillbetheradiusof asiliconatom?Calculatethetheoreticaldensityofsilicon. TheatomicmassofSiis28.1gm/mol. Example3.18SOLUTION Forthediamondcubicstructure, 3 0 = 8r Therefore,substitutinga=5.43,the radiusofsiliconatom=1.176. a ThereareeightSiatomsperunitcell. mass 8(28.1) / 6.023 10 23 density = = = 2.33 g / cm3 volume (5.43 10 8 cm)3 80 (c) 2003 Brooks/Cole Publishing / Thomson Learning Figure3.40Thesiliconoxygentetrahedronandtheresultant cristobaliteformofsilica. 81 (c) 2003 Brooks/Cole Publishing / Thomson Learning Figure3.41Theunitcellofcrystallinepolyethylene. 82 Example3.19 CalculatingtheNumberofCarbonandHydrogen AtomsinCrystallinePolyethylene Howmanycarbonandhydrogenatomsareineachunitcellof crystallinepolyethylene?Therearetwiceasmanyhydrogenatoms ascarbonatomsinthechain.Thedensityofpolyethyleneisabout 0.9972g/cm3. Example3.19SOLUTION Ifweletxbethenumberofcarbonatoms,then2xisthenumberof hydrogenatoms.FromthelatticeparametersshowninFigure3.41: ( x)(12 g / mol ) + (2 x)(1g / mol ) = (7.41 10 8 cm)(4.94 10 8 cm)(2.55 10 8 cm)(6.02 10 23 ) x=4carbonatomspercell 2x=8hydrogenatomspercell 83 Section3.9 DiffractionTechniquesforCrystal StructureAnalysis DiffractionTheconstructiveinterference,orreinforcement,ofa beamofxraysorelectronsinteractingwithamaterial.The diffractedbeamprovidesusefulinformationconcerningthe structureofthematerial. BraggslawTherelationshipdescribingtheangleatwhicha beamofxraysofaparticularwavelengthdiffractsfrom crystallographicplanesofagiveninterplanarspacing. Inadiffractometeramovingxraydetectorrecordsthe2yangles atwhichthebeamisdiffracted,givingacharacteristicdiffraction pattern 84 (c) 2003 Brooks/Cole Publishing / Thomson Learning Figure3.43(a) Destructiveand(b) reinforcinginteractions betweenxraysandthe crystallinematerial. Reinforcementoccursat anglesthatsatisfy Braggslaw. 85 Figure3.44PhotographofaXRD diffractometer.(CourtesyofH&M AnalyticalServices.) 86 Figure3.45(a)Diagramofa diffractometer,showingpowder sample,incidentanddiffracted beams.(b)Thediffraction patternobtainedfromasample ofgoldpowder. (c) 2003 Brooks/Cole Publishing / Thomson Learning 87 Example3.20Examining XrayDiffraction Theresultsofaxraydiffractionexperimentusingxrays with=0.7107(aradiationobtainedfrommolybdenum (Mo)target)showthatdiffractedpeaksoccuratthefollowing 2angles: Determinethecrystalstructure,theindicesofthe planeproducingeachpeak,andthelatticeparameterofthe material. 88 Example3.20SOLUTION Wecanfirstdeterminethesin2valueforeachpeak,thendivide throughbythelowestdenominator,0.0308. 89 Example3.20SOLUTION(Continued) Wecouldthenuse2valuesforanyofthepeakstocalculate theinterplanarspacingandthusthelatticeparameter.Picking peak8: 2=59.42or=29.71 0.7107 d 400 = = = 0.71699 2 sin 2 sin( 29.71) a 0 = d 400 h 2 + k 2 + l 2 = (0.71699)(4) = 2.868 Thisisthelatticeparameterforbodycenteredcubiciron. 90 Figure3.46Photographofa transmissionelectronmicroscope (TEM)usedforanalysisofthe microstructureofmaterials.(Courtesy ofJEOLUSA,Inc.) 91 Figure3.47ATEMmicrographofanaluminumalloy(Al7055) sample.Thediffractionpatternattherightshowslargebright spotsthatrepresentdiffractionfromthemainaluminum matrixgrains.Thesmallerspotsoriginatefromthenano scalecrystalsofanothercompoundthatispresentinthe aluminumalloy.(CourtesyofDr.JrgM.K.Wiezorek, UniversityofPittsburgh.) 92 (c) 2003 Brooks/Cole Publishing / Thomson Learning Figure3.48DirectionsinacubicunitcellforProblem3.51 93 (c) 2003 Brooks/Cole Publishing / Thomson Learning Figure3.49Directions inacubicunitcellfor Problem3.52. 94 (c) 2003 Brooks/Cole Publishing / Thomson Learning Figure3.50PlanesinacubicunitcellforProblem3.53. 95 (c) 2003 Brooks/Cole Publishing / Thomson Learning Figure3.51PlanesinacubicunitcellforProblem3.54. 96 (c) 2003 Brooks/Cole Publishing / Thomson Learning Figure3.52Directionsin ahexagonallatticefor Problem3.55. 97 (c) 2003 Brooks/Cole Publishing / Thomson Learning Figure3.53Directionsina hexagonallatticefor Problem3.56. 98 (c) 2003 Brooks/Cole Publishing / Thomson Learning Figure3.54Planesina hexagonallatticefor Problem3.57. 99 (c) 2003 Brooks/Cole Publishing / Thomson Learning Figure3.55Planesina hexagonallatticefor Problem3.58. 100 (c) 2003 Brooks/Cole Publishing / Thomson Learning Figure3.56XRDpatternforProblem3.107. 101 (c) 2003 Brooks/Cole Publishing / Thomson Learning Figure3.57XRDpatternforProblem3.108. 102
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TheScienceandEngineeringofMaterials,4thedDonaldR.AskelandPradeepP.PhulChapter4ImperfectionsintheAtomicandIonicArrangements11ObjectivesofChapter4Introducethethreebasictypesofimperfections:pointdefects,linedefects(ordislocations),andsurfacedefects
LSU - ME - 2733
TheScienceandEngineeringofMaterials,4thedDonaldR.AskelandPradeepP.PhulChapter5AtomandIonMovementsinMaterials11ObjectivesofChapter5 Examinetheprinciplesandapplicationsofdiffusioninmaterials. Discuss,howdiffusionisusedinthesynthesisandprocessingo
LSU - ME - 2733
TheScienceandEngineeringofMaterials,4thedDonaldR.AskelandPradeepP.PhulChapter6MechanicalPropertiesandBehavior11ObjectivesofChapter6 Introducethebasicconceptsassociatedwithmechanicalpropertiesofmaterials. Evaluatefactorsthataffectthemechanicalpr
LSU - ME - 2733
TheScienceandEngineeringofMaterials,4thedDonaldR.AskelandPradeepP.PhulChapter7StrainHardeningandAnnealing11ObjectivesofChapter7 Tolearnhowthestrengthofmetalsandalloysisinfluencedbymechanicalprocessingandheattreatments. Tolearnhowtoenhancethestr
LSU - ME - 2733
TheScienceandEngineeringofMaterials,4thedDonaldR.AskelandPradeepP.PhulChapter8PrinciplesofSolidification11ObjectivesofChapter8Studytheprinciplesofsolidificationastheyapplytopuremetals.Examinethemechanismsbywhichsolidificationoccurs.Examinehowte
LSU - ME - 2733
TheScienceandEngineeringofMaterials,4thedDonaldR.AskelandPradeepP.PhulChapter9SolidSolutionsandPhaseEquilibrium11ObjectivesofChapter9Thegoalofthischapteristodescribetheunderlyingphysicalconceptsrelatedtothestructureofmatter.Toexaminetherelation
LSU - ME - 2733
TheScienceandEngineeringofMaterials,4thedDonaldR.AskelandPradeepP.PhulChapter10DispersionStrengtheningandEutecticPhaseDiagrams11ObjectivesofChapter10Discussthefundamentalsofdispersionstrengtheningtodeterminethemicrostructure.Examinethetypesofrea
LSU - ME - 2733
TheScienceandEngineeringofMaterials,4thedDonaldR.AskelandPradeepP.PhulChapter11DispersionStrengtheningbyPhaseTransformationsandHeatTreatment11ObjectivesofChapter11Discussdispersionstrengtheningbystudyingavarietyofsolidstatetransformationprocesses
LSU - ME - 2733
TheScienceandEngineeringofMaterials,4thedDonaldR.AskelandPradeepP.PhulChapter12FerrousAlloys1ObjectivesofChapter12Discusshowtousetheeutectoidreactiontocontrolthestructureandpropertiesofsteelsthroughheattreatmentandalloying.Examinetwospecialclasse
LSU - ME - 2733
TheScienceandEngineeringofMaterials,4thedDonaldR.AskelandPradeepP.PhulChapter13NonferrousAlloys11ObjectivesofChapter13ExplorethepropertiesandapplicationsofCu,Al,andTialloysinloadbearingapplications.22ChapterOutline13.1AluminumAlloys13.2Magnes
LSU - ME - 2733
TheScienceandEngineeringofMaterials,4thedDonaldR.AskelandPradeepP.PhulChapter14CeramicMaterials1ObjectivesofChapter14Toexaminethesynthesis,processing,andapplicationsofceramicmaterials.Recapitulateprocessingandapplicationsofinorganicglassesandglas
LSU - ME - 2733
TheScienceandEngineeringofMaterials,4thedDonaldR.AskelandPradeepP.PhulChapter15Polymers11ObjectivesofChapter15DiscusstheclassificationofPolymersLearntwomainwaysofcreatingaPolymerStudytheeffectoftemperatureonThermoplasticsStudymechanicalpropertie
LSU - ME - 2733
TheScienceandEngineeringofMaterials,4thedDonaldR.AskelandPradeepP.PhulChapter16Composites:TeamworkandSynergyinMaterials1ObjectivesofChapter16Studydifferentcategoriesofcomposites:particulate,fiber,andlaminarFocusoncompositesusedinstructuralormech
LSU - ME - 2733
TheScienceandEngineeringofMaterials,4thedDonaldR.AskelandPradeepP.PhulChapter17ConstructionMaterials1ObjectivesofChapter17Topresentasummaryofthematerialpropertiesofwood,concrete,andasphalt.2ChapterOutline17.1TheStructureofWood17.2MoistureConten
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TheScienceandEngineeringofMaterials,4thedDonaldR.AskelandPradeepP.PhulChapter18ElectronicMaterials1ObjectivesofChapter18 Tostudyelectronicmaterialsinsulators,dielectrics,conductors,semiconductors,andsuperconductors. Tostudyconductivityinelectroni
LSU - ME - 2733
TheScienceandEngineeringofMaterials,4thedDonaldR.AskelandPradeepP.PhulChapter19MagneticMaterials1ObjectivesofChapter19Tostudythefundamentalbasisforresponsesofcertainmaterialstothepresenceofmagneticfields.Toexaminethepropertiesandapplicationsofdi
LSU - ME - 2733
TheScienceandEngineeringofMaterials,4thedDonaldR.AskelandPradeepP.PhulChapter20PhotonicMaterials1ObjectivesofChapter20Topresentasummaryoffundamentalprinciplesthathaveguidedapplicationsofopticalmaterials.Toexploretwoavenuesbywhichwecanusetheoptica
LSU - ME - 2733
TheScienceandEngineeringofMaterials,4thedDonaldR.AskelandPradeepP.PhulChapter21ThermalPropertiesofMaterials1ObjectivesofChapter21Todiscussheatcapacity,thermalexpansionproperties,andthethermalconductivityofmaterials.2ChapterOutline21.1HeatCapac
LSU - ME - 2733
TheScienceandEngineeringofMaterials,4thedDonaldR.AskelandPradeepP.PhulChapter22CorrosionandWear11ObjectivesofChapter22Tointroducetheprinciplesandmechanismsbywhichcorrosionandwearoccurunderdifferentconditions.Thisincludestheaqueouscorrosionofmeta
LSU - EE - 4580
Constant: K 20log[abs(k)] k&gt;0 0 degrees k&lt;0 -180 degrees Pole at Origin (Integrator) -20 dB/decade passing through 0 dB at w=1 -90 degrees Zero at Origin (Differentiator) +20 dB/decade passing through 0 dB at w=1 +90 degrees Real Pole
LSU - EE - 4580
MATLAB Tutorial IRepresentation of transfer function:b0 sm + b1sm,1 + bm:i T s = na0 s + a1 sn,1 + anMATLAB command isnum = b0 b1 bm ;den = a0 a1 an ;s , z1s , z2 s , zmii T s = K:s , p1s , p2 s , pnMATLAB command isK = ;Z = z1 z2 zm ;P =
LSU - EE - 4580
Classical Feedback ControlIn classical control, feedback is the key concept. In fact theconcept of feedback has been applied to many other branches ofscience.Question: Why feedback?Plant uncertainty: parameter variations, nonlinearities etc.Environm
LSU - EE - 4580
Procedure for Skecth of root locus page 260 of text:Example 1: Gs = s + 1=s2= z1 = ,1; p1 = p2 = 0 and n , m = 1.Step 1: Mark the poles and zeros on the s-plane.Step 2: Draw locus on the real axis: left of s = ,1.Step 3: Draw asymptotes: since n , m
LSU - EE - 4580
Zero-degree Loci for Negative KWe considersm + b1sm,1 + + bm :KGs = ,jK j sn + a sn,1 + + a1nBy convention, we have1 + KGs = 0; K = 0 ! ,1:The angle of Gs is 0o + 360o lChange: 180o + 360o is replaced by 0o + 360o l.On real axis: the number of p
LSU - EE - 4580
x6. Frequency-Response Design Methods1. Frequency Response:We recall inverse Laplace transform:23K5K4L,1 6 s , j! + s + j! 7 = 2jK j cos!ot + 6 K :ooConsider sinusoidal input signalut = Au cos!otapplied to a plant Gs. Then the output in s-dom
LSU - EE - 4580
GL90P.M.180
LSU - EE - 4580
Example Prob. 6.50 on page 456:K:s1 + s=51 + s=20Design a compensator such thatKGs =ess 0:01 for unit ramp input.P.M.= 45o 3o.ess 1=250 for sinusoidal input with !0:2.Noise be attenuated by a factor of 100 for ! 100.Analysis:essto 1=250 for
LSU - EE - 4580
F-planes-planeD DAABCBC
LSU - EE - 4580
Modeling of Inverted PendulumWe consider line movement for simplication. This example hasapplications to the launch of rocket or missiles. We will demonstrate the use of Lagrange mechanics in modeling.vyvmvzLu(t)My Step 1: Total kinetic energy
LSU - EE - 4580
Iterative Design AlgorithmWe consider an iterative design method: (a) Design zy , z , and Ky &gt; 0, such that the three zeros of(s) = 0 are in the right locations.z5.67zy5.67 (b) Design Kgy and pg such that the roots of (s) = (s + pg )denp(s) + 3.2
LSU - EE - 4580
Course Title:Control System Design.Course Number:EE4580 | Fall 2002.Instructor:Dr. Guoxiang Gu, ECE 329, Tel : 578-5534, Email: ggu@ee.lsu.edu.O ce Hour:7:30 10:00 AM M. W. at ECE 329.Estimated ABET:Engineering Science: 1 credit; Engineering Desi
LSU - EE - 4580
LSU - EE - 4580
LSU - EE - 4580
LSU - EE - 4580
LSU - EE - 4580
Homework 1 of EE 4002 Spring 2004Solution:Solution:
LSU - EE - 4580
Solution to Homework 2 of EE4002, Spring 2004
LSU - EE - 4580
Solution to Homework 6 of EE4002 Spring 2004
LSU - EE - 4580
Solution to Homework 7EE4002, Spring 2004
LSU - EE - 4580
Solution to Homework 8 of EE4002 Spring 2004
LSU - EE - 4580
Project 2: Digital Control of the Ball-Beam SystemThis project is based on Project 1 using mainly Simulink toolbox to validate yourdesign. The project consists of the following: Program the continuous-time nonlinear ball-beam model using the Simulink t
LSU - EE - 4580
Solution to Homework 9 of EE4002 Spring 2004
LSU - EE - 4580
Solution to Midterm Test1. For the lead compensator, we havedB20.2220200degree45.2220200For the lag compensator, we havedB20.2220200220200degree.204512. (a) For the gain plot, we choose L = 0.1, and H = 1000. Hence we have at
LSU - EE - 4580
H0=zpk([],[0,-1,-5,-10],1);H1=zpk([-2],[0,-1,-5,-10],1);H2=zpk([-2,-6],[0,-1,-5,-10],1);H3=zpk([-2,-4],[0,-1,-5,-10],1);H4=tf([1],[1 3 10]);H5=tf([1],[1 3 10 0]);H6=tf([1 2 8],[1 2 10 0]);H7=tf([1 2 12],[1 2 10 0]);H8=tf([1 0 1],[1 0 4 0]);H9=tf(
LSU - EE - 4580
LSU - EE - 4580
LSU - EE - 4580
Matlab Section of Question 3.41For the lower boundary I chose the number zero to indicate that the number was stillnegative, and then I choose a number smaller than zero to prove that the roots arepositive. This helped me show that the poles are in the
LSU - EE - 4580
LSU - EE - 4580
MATLAB REQUIREMENT FOR HW#2PART 1.The code below is what I used to get the transfer function, zero/pole form, and a graph of the step function.&gt; num1=[500 2500];&gt; den1= conv([1 12 100],[1 25]);&gt; gtf1=tf(num1,den1)Transfer function:500 s + 2500-s^3
LSU - EE - 4580
MATLAB COMMANDS TO GET PLOTS ON THE NEXT PAGE FOR 4.4 a,b,c,d&gt; numA=[1];&gt; numB=[1 2];&gt; numC=[1 8 12];&gt; numD=[1 6 8];&gt; denALL=[1 16 65 50 0];&gt; sysA=tf(numA,denALL)Transfer function:1-s^4 + 16 s^3 + 65 s^2 + 50 s&gt; sysB=tf(numB,denALL)Transfer fun
LSU - EE - 4580
Solution to HW2 EE4580 Fall04
LSU - EE - 4580
Solution to Homework 3 of EE 4580 Fall 04
LSU - EE - 4580
HW #3 MATLAB SECTION OF 5.65.6-AMATLAB INSTRUCTIONS&gt; numA=[1];&gt; denA=[1 8 0 0];&gt; sysA=tf(numA,denA)Transfer function:1-s^3 + 8 s^2&gt; rlocus(sysA)RESULTING GRAPHRoot Locus1510Imag Ax is50-5-10-15-20-15-10-5Real Axis055.6-CMATLAB
LSU - EE - 4580
HW #3 MATLAB SECTION OF 5.65.7-BMATLAB INSTRUCTIONS&gt; numB=[1 2];&gt; denB=[1 16 85 250 0 0];&gt; sysB=tf(numB,denB)Transfer function:s+2-s^5 + 16 s^4 + 85 s^3 + 250 s^2&gt; rlocus(sysB)RESULTING GRAPHRoot Locus201510Imag Ax is50-5-10-15-20-20
LSU - EE - 4580
HW #3 MATLAB SECTION OF 5.85.8-BMATLAB INSTRUCTIONS&gt; numB=[1 2];&gt; denB=[1 10 -1 -10];&gt; sysB=tf(numB,denB)Transfer function:s+2-s^3 + 10 s^2 - s - 10&gt; rlocus(sysB)RESULTING GRAPHRoot Locus1510Imag Ax is50-5-10-15-10-8-6-4Real Axis-
LSU - EE - 4580
Correction to 5-11 of HW4 EE4580 Fall041) The closed-loop transfer function is10 K1Y ( s)Gc ( s ) ==(1)R( s ) s ( s + )( s + 10) + s ( s + ) + 2 K1 s + 10 K1You can use direct computation, Masons rule or block diagram simplification methodto get
LSU - EE - 4580
MATLAB PART OF 5.29PART Dsys29d2 = zpk([-1 -0.5],[0 -1 -10 -55.6 -0.04],10)rlocus(sys29d2);grid on;Root Locus1500.620.480.360.240.120.76140120100100800.886050400.97Imaginary Ax is200200.9740-50600.8880-1001001200.760.6
LSU - EE - 4580
Solution to HW5 of EE4580 Fall04
LSU - EE - 4580
6.4a6.4b6.4c6.4d
LSU - EE - 4580
6.5a6.5b6.5c6.5d6.5e-GAVE ME A WARNING SIGN6.5f- GAVE ME A WARNING SIGN
LSU - EE - 4580
6.7a6.7b6.7c6.7d6.7e