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Iowa State - EE - 330
EE 330 Laboratory 5 Creating bonding padsSpring 2011Objective: The objective of this experiment is investigate the design of a basic bonding pad andsimple ESD protection circuitry.Part 1: Layout of a resistorThe first step of this lab is to learn how
Iowa State - EE - 330
EE 330 Laboratory 6 Models for MOS DevicesSpring 2011Part 1: IntroductionThe mathematical relationship between the terminal currents and voltages for a device is termed the device model. Although the basic operation of the MOS transistor is quite strai
Iowa State - EE - 330
EE 330 Laboraory 7 MOSFET Device Characterization and ApplicationsFall 2010 Objective: The objective of this laboratory experiment is to become more familiar with the operation of the MOS transistor, to develop methods for measuring key parameters of the
Iowa State - EE - 330
EE 330 Laboraory 8 Thyristor Device Characterization and ApplicationsFall 2011Objective: The objective of this laboratory experiment is to become familiar with the operation thyristors, to develop methods for measuring key parameters of thyristors, , an
Iowa State - EE - 330
EE 330 Laboratory 9 Semiconductor Parameter Measurement and Thyristor ApplicationsSpring 2011Objective: The objective of this laboratory experiment is to become familiar with using a semiconductor parameter analyzer for extracting model parameters for d
Iowa State - EE - 330
EE 330 Laboratory 10 Bipolar Devices and ApplicationsFall 2010Objective:The objective of this laboratory is to investigate applications of BJTsDiscussion:Although the major emphasis in this course has been on integrated devices, discrete transistors
Iowa State - EE - 330
EE 330 Laboratory Experiment Number 11 Design, Simulation and Layout of Digital Circuits using Hardware Description LanguagesPurpose: The purpose of this experiment is to develop methods for using HardwareDescription Languages for the design of digital
Iowa State - EE - 330
EE 330 Fall 2011Integrated ElectronicsLecture Instructor: Randy Geiger 2133 Coover rlgeiger@iastate.edu 294-7745Lab Instructors: Rui Bai Yongjie Jiang Curtis Mayberry Srijita Patra Brian Modtland bairui@iastate.edu yjjiang@iastate.edu curtisma@iastate.
Iowa State - EE - 330
EE 330 Fall 2009Integrated ElectronicsLecture Instructor: Randy Geiger 2133 Coover rlgeiger@iastate.edu 294-7745 Sheng-Huang (Alex) Lee and Dan Congreve http:/class.ece.iastate.edu/ee330/ 1012 CooverLab Instructors: Web Site: Lecture: MWF 9:00 Lab: Sec
Iowa State - EE - 330
EE 330 Lecture 2Basic ConceptsReview from Last TimeChallenges Managing increasing device count Short lead time from conception to marketplace Process technology advances Device Performance Degradation Increasing variability Increasing pressure for cos
Iowa State - EE - 330
EE 330 Lecture 2Basic ConceptsQuiz 1The International Technology Roadmap for Semiconductors (ITRS) makes predictions on challenges and trends in the semiconductor industry. What is the ITRS projecting for the supply voltage of digital ICs in 10 years?
Iowa State - EE - 330
EE 330 Lecture 3Basic ConceptsHistorical Background, Feature Sizes and YieldReview from Last Time Sophisticated Integrated CAD Toolsets are extensively used in the industry to design integrated circuits Minimize the chances of an error Real asset to
Iowa State - EE - 330
EE 330 Lecture 3Basic ConceptsHistorical Background, Feature Sizes and YieldQuiz 2How many minimum-sized MOS transistors can be placed on a square die that is 1000 on a side in a 65nm process? (Neglect any bonding pads needed to get the signals to the
Iowa State - EE - 330
EE 330 Lecture 4Statistical ConceptsHistorical Background, Feature Sizes and Yield Digital Systems A previewReview from Last TimeDefects in a WaferDefect Dust particles and other undesirable processes cause defects Defects in manufacturing cause yie
Iowa State - EE - 330
EE 330 Lecture 4Statistical ConceptsHistorical Background, Feature Sizes and Yield Digital Systems A previewQuiz 3The defect density is often considered as proprietary information. Assume, however, that a process engineer had a lapse of thought and di
Iowa State - EE - 330
EE 330 Lecture 5Digital Systems A previewStatic CMOS Gates Other Logic Styles Improved Device ModelsReview from Last TimeStatistics ReviewfN fx N , y N 0,1x y 0 1+x f x dx 1yxy fN y dy 1If the random variable x in Normally distributed wi
Iowa State - EE - 330
EE 330 Lecture 5Digital Systems A previewStatic CMOS Gates Other Logic Styles Improved Device ModelsQuiz 4Determine VH and VL at the C output for the Static CMOS NOR gate shown. Use the switch-level model for the transistors introduced in the last lec
Iowa State - EE - 330
EE 330 Lecture 6Improved Device Models Stick Diagrams Technology FilesReview from Last TimeMOS TransistorQualitative Discussion of n-channel OperationSource Bulk Gate DrainDrainGaten-channel MOSFETSourceEquivalent Circuit for n-channel MOSFETD
Iowa State - EE - 330
EE 330 Lecture 6Improved Device Models Stick Diagrams Technology FilesQuiz 5Design, using the Complex Logic Gates approach, a logic circuit that implements the Boolean function Y=AB+C Assume the input variables available are A, B, and C. How many trans
Iowa State - EE - 330
EE 330 Lecture 7Delay Calculations Stick Diagrams Technology Files - Design RulesReview from Last TimeMOS TransistorQualitative Discussion of n-channel OperationSource Bulk Insulator Gate DrainDrainFor VGS smalln-channel MOSFETGateBulkSourceSo
Iowa State - EE - 330
EE 330 Lecture 7Technology Files - Design RulesQuiz 6Determine the LH propagation time if a minimum-sized CMOS inverter is driving a capacitive load of 200pF. Use typical values for modeling the CMOS inverter but state what values you use.AY 100pfAn
Iowa State - EE - 330
EE 330 Lecture 8IC Fabrication Technology Part 1Review from Last TimeTechnology Files Provide Information About Process Process Flow (Fabrication Technology) Model Parameters Design Rules Serve as Interface Between Design Engineer and Process Engine
Iowa State - EE - 330
EE 330 Lecture 8IC Fabrication Technology Part 1Quiz 7The layout of the cascade of two CMOS inverters is shown. It has some layout errors. Identify them.And the number is .183546972And the number is .1749638542Quiz 7 Solution:- B
Iowa State - EE - 330
EE 330 Lecture 9IC Fabrication Technology Part 2Review from Last TimeTechnology Files Design Rules Process Flow (Fabrication Technology) Model Parameters (will discuss in substantially moredetail after device operation and more advanced models are i
Iowa State - EE - 330
EE 330 Lecture 9IC Fabrication Technology Part 2Quiz 8A 2m silicon crystal is cut into wafers using a wire saw. If the wire diameter is 220um and the wafer thickness is 350um, how many wafers will this 2m crystal provide? In solving this problem you ma
Iowa State - EE - 330
EE 330 Lecture 10IC Fabrication Technology Part IIIEpitaxy Polysilicon Interconnects Back-end ProcessesReview from Last TimeIC Fabrication Technology Crystal Preparation Masking Photolithographic Process Deposition Implantation Etching Diffusion Oxid
Iowa State - EE - 330
EE 330 Lecture 10IC Fabrication Technology Part III- Interconnects - Back-end ProcessesQuiz 9What is the major reason shallow trench isolation (STI) is used instead of Local Oxidation to create the field oxide in a MOS process?Silicon Nitride Etched
Iowa State - EE - 330
EE 330 Lecture 11IC Fabrication Technology Part IV- Back-end ProcessesDevices in Semiconductor ProcessesReview from Last Time Contacts usually of a fixed size All etches reach bottom at about the same time Multiple contacts widely used Contacts not
Iowa State - EE - 330
EE 330 Lecture 11IC Fabrication Technology Part IV- Back-end ProcessesDevices in Semiconductor ProcessesQuiz 10What is the major reason contacts of metal to poly are not allowed in the gate region of a transistor?AA'Unacceptable ContactAnd the nu
Iowa State - EE - 330
EE 330 Lecture 12Devices in Semiconductor ProcessesReview from Last TimeBack-End Process FlowWafer Probe Wafer Dicing Die AttachWire Attach (bonding)PackageTestShipReview from Last TimeWafer Dicingwww.renishaw.comReview from Last TimeDie Atta
Iowa State - EE - 330
EE 330 Lecture 12Devices in Semiconductor ProcessesQuiz 11A wire obtained with a ball bond is shown sitting on a bonding pad. What is a typical value for the dimension d1 shown?d1=?And the number is .183546972And the number is .174963
Iowa State - EE - 330
EE 330 Lecture 13Devices in Semiconductor ProcessesDiodes Capacitors MOS TransistorsBasic Devices Standard CMOS Process MOS Transistors n-channel p-channel Primary Consideration in This Course Capacitors Resistors Diodes BJT (in some processes) n
Iowa State - EE - 330
EE 330 Lecture 13Devices in Semiconductor ProcessesQuiz 11Consider a p-n junction comprised of uniformly doped p-type and n-type materials where the doping density of the p-type material is 5 times that of the n-type material. If under zero bias the de
Iowa State - EE - 330
EE 330 Lecture 14Devices in Semiconductor ProcessesMOS TransistorsReview from Last Time Lets study the diode equation a little further Vd Vt d S I I e 1 Diode Characteristics10000 100 1 0.01 0.0001 1E-06 1E-08 1E-10 1E-12 0 0.2 0.4 0.6 0.8 1 Vd (v
Iowa State - EE - 330
EE 330 Lecture 14Devices in Semiconductor ProcessesDiodes Capacitors MOS TransistorsReview from Last TimeReview from Last Timehttp:/www.oftc.usyd.edu.au/edweb/devices/semicdev/doping4.htmlReview from Last TimeReview from Last TimeReview from Last
Iowa State - EE - 330
EE 330 Lecture 15Devices in Semiconductor Processesthe MOS TransistorReview from Last Timen-Channel MOSFETGate Source L DrainWLEFFBulkReview from Last Timen-Channel MOSFET Operation and ModelVDS VGS VBSID IGIBApply small VGS (VDS and VBS ass
Iowa State - EE - 330
EE 330 Lecture 15Devices in Semiconductor Processesthe MOS TransistorReview from Last TimeFringe CapacitorsCdA C dA is the area where the two plates are parallelOnly a single layer is needed to make fringe capacitorsReview from Last TimeCapacit
Iowa State - EE - 330
EE 330 Lecture 16MOS Device Modelingp-channel . n-channel comparisons Model consistency and relationshipsCMOS Process FlowReview from Last TimeOperation Regions by Applications300 250 200 150 100 50 0 0 1 2 Vds 3 4 5IDTriode Region Saturation Reg
Iowa State - EE - 330
EE 330 Lecture 16MOS Transistor Models CMOS Process FlowReview from Last TimeGraphical Interpretation of MOS Model 0 V W I C V V V L 2 W V V C 2LDS D OX GS T 2 OX GS TV VGS GSTDSV VTV V VDS GSTV VGSTV V VDS GSTReview from Last TimeMo
Iowa State - EE - 330
EE 330 Lecture 17CMOS Process Flow Characteristics of Finer Feature Size ProcessesBipolar ProcessReview from Last TimeOperation Regions by Applications300250IDTriode Region Saturation RegionAnalog Circuits200Id150 100 50 0 0 1 2Cutoff Region
Iowa State - EE - 330
EE 330 Lecture 18Characteristics of Finer Feature Size Processes Bipolar ProcessHow does the inverter delay compare between a 0.5u process and a 0.13u process?VDDVINVOUTVINVOUTVSSHow does the inverter delay compare between a 0.5u process and a 0.
Iowa State - EE - 330
EE 330 Lecture 19Bipolar Device Modeling Bipolar ProcessReview from Last LectureBasic Devices and Device Models Resistor Diode Capacitor MOSFET BJTReview from Last LectureBipolar Junction TransistorsOperation and ModelingReview from Last LectureB
Iowa State - EE - 330
EE 330 Lecture 19Characteristics of Finer Feature Size Processes Bipolar ProcessBasic Devices and Device Models Resistor Diode Capacitor MOSFET BJTBipolar Junction Transistors Operation ModelingCarriers in Doped Semiconductorsn-typep-typeCarriers
Iowa State - EE - 330
EE 330 Lecture 20Bipolar ProcessesBipolar Devices BJT JFET Thyristors SCR TRIACReview from Last LectureSimple dc modelTypical Output CharacteristicsSaturation300 250 200 150 100 50 0 0 1 2 Vds 3 4 5ICForward ActiveVBE or IBIdVCECutoffForward
Iowa State - EE - 330
EE 330 Lecture 20Bipolar Device Modeling Bipolar ProcessReview from Last LectureBasic Devices and Device Models Resistor Diode Capacitor MOSFET BJTReview from Last LectureBipolar Junction TransistorsOperation and ModelingReview from Last LectureB
Iowa State - EE - 330
EE 330 Lecture 21Bipolar Devices ThyristorsSCRs TriacsReview from Last LectureC B EE C vertical npn B ECB B E A-A' Section C B E lateral pnp ECBCB-B' SectionReview from Last LectureD A-A' Section D S GG Sp-channel JFETB-B' SectionReview f
Iowa State - EE - 330
EE 330 Lecture 21Bipolar ProcessesReview from Last LectureSimple dc model~ IB I S eVBE Vt~ IC I S ekT Vt qVBE VtJS A E IB e VBE VtIC JS A EekT Vt qVBE VtJS is termed the saturation current density Process Parameters : JS,Design Parameters:
Iowa State - EE - 330
EE 330 Lecture 22ThyristorsSCR TriacReview from Last LectureEnhancement and Depletion MOS Devices Enhancement Mode n-channel devices VT > 0 Enhancement Mode p-channel devices VT < 0 Depletion Mode n-channel devices VT < 0 Depletion Mode p-channel dev
Iowa State - EE - 330
EE 330 Lecture 22Bipolar Processes ThyristorsReview from Last LectureC BEC vertical npn B EC B BEEA-A' Section B CC B E lateral pnp ECB-B' SectionReview from Last LectureD A-A' Section D S GGSp-channel JFETB-B' SectionReview from Last L
Iowa State - EE - 330
EE 330 Lecture 23Area Comparison between MOS and Bipolar Circuits Operating Point Characterization Amplification with Transistor CircuitsReview from Last LectureBi-directional switching with the TriacMT2n p nMT2Gn np nG MT1MT1 Has two cross-co
Iowa State - EE - 330
EE 330 Lecture 23ThyristorsReview from Last LectureThe JFETGD G S n-channel GDS DS p-channelp-channel JFETSquare-law model of n-channel JFET 0 VDS 2IDSS 2 VGS -VP VDS 2 VP 2 I 1- VGS DSS VP VGS < VP VGS > VP VGS > VP VDS < VGS -VP VDS < VGS -VP
Iowa State - EE - 330
EE 330 Lecture 24Amplification with Transistor Circuits Small Signal ModellingReview from Last LectureAmplification with TransistorsFrom Wikipedia: Generally, an amplifier or simply amp, is any device that changes, usually increases, the amplitude of
Iowa State - EE - 330
EE 330 Lecture 24Area Comparison between MOS and Bipolar Circuits Operating Point Characterization Amplification with Transistor CircuitsReview from Last LectureBi-directional switching with the TriacMT2n p nMT2Gn np nG MT1MT1 Has two cross-co
Iowa State - EE - 330
EE 330 Lecture 25Small Signal ModelingReview from Last LectureSmall signal analysis exampleVDD RAssume M1 operating in saturation regionVOUTVIN=VMsintM1VINVSSVOUTC W V V V 2L OX DD SST2 C W R V V R V sin t L OX SS T MQuiescent Outputss
Iowa State - EE - 330
EE 330 Lecture 25Amplification with Transistor CircuitsReview from Last2 LectureQuadrants of Operation Defined in VM21-VGT1 plane(not in the IT-VM21 plane)MT2ITVM21 MT1ITVM21IGG VGT1Quadrant 2Quadrant 1VGT1VM21IG4>IG3>IG2>IG1=0Quadrant 3
Iowa State - EE - 330
EE 330 Lecture 26Small Signal ModelingReview from Last LectureSmall-Signal PrincipleyQ-pointySS y=f(x) xSSf y f x xQyQxx=x QSSxQxQuiescent Output ss Gain How can a circuit be linearized at an operating point as an alternative to linearizing
Iowa State - EE - 330
EE 330 Lecture 26Amplification with Transistor CircuitsReview from Last LectureConsider the following MOSFET and BJT CircuitsBJTVCC R1 VOUT Q1 VIN(t) VEEMOSFETVDD R1 VOUT M1 VIN(t) VSS MOS and BJT Architectures often Identical Circuit are Highly N
Iowa State - EE - 330
EE 330 Lecture 27Small-signal model of BJT Small-Signal Model Extension Applications of the Small-signal ModelReview from Last Lecture4-terminal small-signal network summaryI1 I2 4-Terminal Device I3 V2 V3 V1I1 f1 V1,V 2 , V3 I2 f2 V1,V 2 , V3 I3 f
Iowa State - EE - 330
EE 330 Lecture 27Small-Signal Models of n-terminal devices Small-signal models of MOSFET and BJTReview from Last LectureSmall-Signal PrincipleyRegion around Q-Pointy=f(x)YQQ-pointXQxReview from Last LectureSmall-Signal PrincipleIiSSI i VSS
Iowa State - EE - 330
EE 330 Lecture 28Small-Signal Model Extension Applications of the Small-signal ModelReview from Last LectureSmall Signal Model of BJTi y V yV i y V y VB 11 BE 12 CEC21BE22CEi g V i g V g VB BEI g VCQtI g VmCQg OtI VCmBEOCECQAF
Iowa State - EE - 330
EE 330 Lecture 28Small-Signal Model Extension Applications of the Small-signal ModelReview from Last Lecture Consider 4-terminal networkI1 I2 4-Terminal Device I3 V2 V3 V1I1 f1 V1,V 2 , V3 I2 f2 V1,V 2 , V3 I3 f3 V1,V 2 , V3 Nonlinear network cha