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EE 330 Lect 7 Fall 2011

Course: EE 330, Fall 2011
School: Iowa State
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330 EE Lecture 7 Delay Calculations Stick Diagrams Technology Files - Design Rules Review from Last Time MOS Transistor Qualitative Discussion of n-channel Operation Source Bulk Insulator Gate Drain Drain For VGS small n-channel MOSFET Gate Bulk Source Source Bulk Gate Drain Insulator Source Bulk Gate Drain Insulator Resistor n-channel MOSFET For VGS large Review from Last Time Improved...

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330 EE Lecture 7 Delay Calculations Stick Diagrams Technology Files - Design Rules Review from Last Time MOS Transistor Qualitative Discussion of n-channel Operation Source Bulk Insulator Gate Drain Drain For VGS small n-channel MOSFET Gate Bulk Source Source Bulk Gate Drain Insulator Source Bulk Gate Drain Insulator Resistor n-channel MOSFET For VGS large Review from Last Time Improved Switch-Level Model G D RSW CGS VGS Drain Gate Source Switch closed for VGS="1" S Switch-level model including gate capacitance and drain resistance CGS and RSW dependent upon device sizes and process For minimum-sized devices in a 0.5u process CGS 1.5fF R sw 2K n channel 6K p channel Considerable emphasis will be placed upon device sizing to manage CGS and RSW Review from Last Time Drain Model Summary 1, Switch-Level model D D G=1 G=0 Gate Source S S 2, Improves switch-level model G RSW CGS VG S S D Switch closed for VGS= large Switch open for VGS= small Other models will be developed later Review from Last Time Response time of logic gates (inverter) A With improved model Y CL t HL R C SWn SWp L t LH R C L - Logic Circuits can operate very fast - Extremely small parasitic capacitances play key role in speed of a circuit Review from Last Time Summary: What is the delay of a minimum-sized inverter driving a 1pF load? X Y X 1pF Y t t HL R C SWn L 2K 1 pF 6K 1 pF 2n sec 6n sec LH R C SWp L Drain Improved switch-level model G RSW CGS VG S S D Gate Source Switch closed for VGS= large Switch open for VGS= small Previous example showed why RSW in the model was important But of what use is the CGS which did not enter the previous calculations? For minimum-sized devices in a 0.5u process CGS 1.5fF R sw 2K n channel 6K p channel One gate often drives one or more other gates ! A Y What are tHL and tLH? Example: What is the delay of a minimum-sized inverter driving another identical device? X Y G p-channel Model D RSWp ? Load on first inverter CGSp Y G VDD n-channel Model Y S D RSWn CGSn CGSn S CGSn 1.5fF Y Loading effects same whether CGSp connected to VDD or GND Y CGSp+CGSn For convenience, will reference both to ground Y 3fF Example: What is the delay of a minimum-sized inverter driving another identical device? Assume VDD=5V X Y X 3fF Y Example: What is the delay of a minimum-sized inverter driving another identical device? X Y X 3fF Y t t HL R C SWn L 2K 3 fF 6K 3 fF 6 p sec 18 p sec LH R C SWp L Note this is very fast but even the small 1.5fF capacitors are not negligable ! Stick Diagrams It is often necessary to obtain information about placement, interconnect and physical-layer structure Stick diagrams are often used for small component-count blocks Approximate placement, routing, and area information can be obtained rather quickly with the use of stick diagrams Stick Diagrams Metal 1 poly n-diffusion p-diffusion Metal 2 Contact Additional layers can be added and color conventions are peronal Stick Diagram A B A VDD B A B A stick diagram is not a layout but gives the basic structure (including location,, orientation and interconnects) that will be instantiated in the actual layout itself Modifications can be made much more quickly on a stick diagram than on a layout Iteration may be needed to come up with a good layout structure Stick Diagram A B Alternate Representation A B A B Technology Files Provide Information About Process Process Flow (Fabrication Technology) Model Parameters Design Rules Serve as Interface Between Design Engineer and Process Engineer Insist on getting information that is deemed important for a design Limited information available in academia Foundries often sensitive to who gets access to information Customer success and satisfaction is critical to foundries Technology Files Design Rules Process Flow (Fabrication Technology) next (will discuss ) Model Parameters (will discuss in substantially more detail after device operation and more advanced models are introduced) Typical Design Rules Typical Design Rules (cont) Typical Design Rules (cont) Typical Process Description Typical Process Description (cont) Typical Process Description (cont) Typical Model Parameters Typical Model Parameters (cont) Typical Model Parameters (cont) Typical Model Parameters (cont) Typical Model Parameters (cont) Typical Model Parameters (cont) Typical Model Parameters (cont) Typical Design Rules (cont) Technology Files Design Rules Process Flow (Fabrication Technology) (will discuss next ) Model Parameters (will discuss in substantially more detail after device operation and more advanced models are introduced) Design Rules Give minimum feature sizes, spacing, and other constraints that are acceptable in a process Very large number of devices can be reliably made with the design rules of a process Yield and performance unpredictable and often low if rules are violated Compatible with design rule checker in integrated toolsets Design Rules and Layout Drain consider transistors Layer Map Drain p-active n-active Gate Gate Poly 1 Metal 1 Source Source n-well contact L W L W D G Layout S D G Layout S Layout always represented in a top view in two dimensions Design Rules and Layout Drain consider transistors Layer Map Drain p-active n-active Gate Gate Poly 1 Metal 1 Source Source n-well contact L W L W D G Layout S D G Layout S Everything useful in channel region. All other features just overhead that degrades performance Design Rules L W D G S Design rules give minimum feature sizes and spacings Designers generally do layouts to minimize size of circuit subject to design rule constraints (because yield, cost, and performance usually improve) Design Rules and Layout Drain consider transistors Layer Map Drain p-active n-active Gate Gate Bulk Poly 1 Metal 1 Source Source n-well contact L W D G S B D G S Bulk connection needed Single bulk connection can often be used for several (many) transistors Design Rules and Layout Drain consider transistors Layer Map p-active n-active Drain Gate Gate Bulk Poly 1 Metal 1 Source Source n-well contact D G S B D G S Bulk connection needed Single bulk connection can often be used for several (many) transistors is they share the same well Design Rules and Layout A Logic Circuit VDD M2 A M1 M3 M4 Y (example) Y W=0.9u L=0.6u Circuit Schematic (Including Device Sizing) A Y Stick Diagram Design Rules (example) A Y Layer Map p-active n-active Poly 1 Metal 1 n-well contact Layout Design Rules (example) Polygons merged in Geometric Description File (GDF) Separate rectangles generally more convenient to represent Design Rules (example) Design rules must be satisfied throughout the design DRC runs incrementally during layout in most existing tools to flag most problems DRC can catch layout errors but not circuit design errors Design Rules (example) What is wrong with this layout ? Bulk connections missing! Design Rules (example) Note diffusions needed for bulk connections Note p-well connections increase area a significant amount Note p-wells are both connected to VDD in this circuit Design Rules (example) Layout with shared p-well reduces area Design Rules (example) Shared p-active can be combined to reduce area Shared n-active can be combined to reduce area Design Rules Design rules can be given in absolute dimensions for every rule Design rules can be parameterized and given relative to a parameter Makes movement from one process to another more convenient Easier for designer to remember Some penalty in area efficiency Often termed -based design rules Typically is the minimum feature size in a process End of Lecture 7
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Iowa State - EE - 330
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EE 330 Lecture 34Guess Lecture by Todd Brooks and Kerry Thompson of Broadcom was given here.
Iowa State - EE - 330
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Iowa State - EE - 330
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Iowa State - EE - 330
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Iowa State - EE - 330
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Iowa State - EE - 330
EE 330 Lecture 39Digital CircuitsMultiple-input gates Propagation Delay basic characterization Device SizingReview from Last TimeTransfer characteristics of the static CMOS inverter(Neglect effects)VDDVOUTVDDCase 5 Case 4 Case 3M2 VIN M1 VOUTCa