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Michigan - EECS - 216
Frequency Response Functionsand Transfer FunctionsProfessor J. W. GrizzleEECS DepartmentSummary of What You Have to Know Definition of the Frequency Response FunctionH ( j ) =e j h( )d Response of an LTI system to a phasor, ejty (t ) = e jt H ( j
Michigan - EECS - 216
1Impulse Response of a LTI SystemJ.W. GrizzleLet y (t) = T [x, t] be a LTI system.Def: The impulse response of y (t) = T [x, t] is h(t) := T [, t]Very Important Fact (Theorem) Under certain technical conditions [thatessentially mean, whenever the im
Michigan - EECS - 216
1Introduction to the Fourier TransformContents: Brief summary of key results so far How to go from Fourier series to theFourier Transform2Summary of Where We Are So Far(Signals & Systems):System mapping inputs to outputs, y (t) = T [x, t], may be
Michigan - EECS - 216
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Michigan - EECS - 216
EECS 216Signals and SystemsSupplement for Lecture OneProfessor J.W. Grizzle(Section 2)Course Comments Attendance of lecture is expected;discussion sections are optional, but highlyrecommended. Syllabus and much more are posted on theclass web si
Michigan - EECS - 216
1Spectra of Fourier SeriesConsider x(t) = ck ejkw0 t . The SPECTRUM of x(t) is a plot of |ck | and ckk=versus either k or w = kw0 . Often one just plots the magnitude.Example: x(t) = square wave,ck = k evenk odd02j k10.80.60.40.200.20.4
Michigan - EECS - 216
1Spectra of a Sqaure WaveConsider a signal written as an exponential Fourier series: x(t) = ck ejkw0 t .k=The SPECTRUM of x(t) is a plot of |ck | and ck versus either k or w = kw0 . This isillustrated here for a square wave.32x(t)10123012
Michigan - EECS - 216
1System Analysis with Fourier Series (&$ #!'% " Fig. 1. LTI BIBO stable system.x(t) = jkw0 tk = ck ec0 +k =1 2|ck | cos(kw0 t+ k ), where k = ckHow to compute y (t)? Let H (jw) be the frequency response function. We know thatck ejkw0 t ck
Michigan - EECS - 216
216F07-Sec001: Lecture 29/6/07ToDo Today Logistics O ffic e h o u r s E xam 2 You are here This is where we are goingOffice hours Strategy: Homework is due at thebeginning of class on TuesdaysMTWTh1 1 -1 2 P M (A J )3 :3 0 - 4 :3 0 P M ( J
Michigan - EECS - 216
Five Steps to Graphical Convolution anda Couple of Ways to Turn Old Results into NewG. WakeeldEECS 216 Fall 2007September 20, 2007As promised, please consider the following as you read the material in the book andwork through the homework problems.
Michigan - EECS - 216
EECS 216: Signals and SystemsL[f ]+L1[F ]+ab+pz+ode+ic+roc+pfeG. Wakeeld1Facts1. L[f ] : causal (e.g., strictly zero for t < 0) signals only.2. LB [f ]: causal, anticausal (e.g., strictly zero for t 0, or noncausal signals.3. ROC is required for co
Michigan - EECS - 216
FRF, ODE, and Complex ExponentialsG. Wakeeldfor EECS 216F071The Frequency Response FunctionIn class on September 25, we re-visited what the output of a linear, time-invariant (LTI)system H is when the input is a complex exponential. Setting the inte
Michigan - EECS - 320
EECS 3201 Class OverviewFirst announcement Course website: ctools, EECS 320 001 F07Please read the syllabus (in course website) for other course info.Important announcement will be posted sometimes on the coursewebsite. Check frequently!No late hom
Michigan - EECS - 320
EECS 32002 Diodes and Transistors in Circuits Blackbox ModelLinear circuits in EECS 215R1iLvin(t)iCL++ vL 2iLR2CvC-No traffic control.Ku/EECS 320Diodes and transistorsDiodes and transistors add traffic controlcapabilities to the linear
Michigan - EECS - 320
EECS 32003 Diodes Toy ModelHow to implement a diode?A one way valve for current flowIdealIVVelectronPauli Exclusion Principle & ElectronsElectron energy (eV)Atomvalence electronelectronE3E2E1Similar pictureholds for solidsKu/EECS 320Me
Michigan - EECS - 320
EECS 32004 Semiconductors: A General Introduction(chapter 1)Metals, semiconductors, & insulatorsbandgapmetalfree moving electronsemiconductorinsulatorKu/EECS 320Semiconductors (for devices) aresingle crystalline solidsTypes of solidsAmorphous
Michigan - EECS - 320
EECS 32005 Carrier Modeling band structure(chapter 2.1-2.3.2)OutlineSemiconductor is a single crystalline solid.What is its band structure?is its band structure?Electron energystates for electrons to occupybandgapReality?semiconductorKu/EECS 3
Michigan - EECS - 320
EECS 32006 Carrier Modeling Carrier Density(chapter 2.3.3 2.3.5)CarriersCarriers are electrons or holes that canconduct (carry) currentconduct (carry) currentNotation:n = number of (conducting) electrons/cm3p = number of (conducting) holes/cm3ro
Michigan - EECS - 320
EECS 32007 Carrier Modeling Carrier Distribution(chapter 2.4 2.5)OutlineHow do carriers distribute inenergy?Carriers are not localized in thesense that they move aroundthe silicon lattice.They cannot all occupy thelowest conduction band statesl
Michigan - EECS - 320
EECS 32008 Carrier Action Drift and Diffusion(chapter 3.1 3.2)Diode model not so toy-like anymoreRelative position?ECnEFEFEVpxP-siliconN-siliconVKu/EECS 320Thermal Motion Of CarriersCarriers move randomly in crystal withzero net displace
Michigan - EECS - 320
EECS 32009 Carrier Action Recombination and Generation(chapter 3.3)OutlineSo far, everything is under thermal equilibrium.electrondriftECdiffusionnEFEFEVpUnder external bias:nECEFEFEVpKu/EECS 320Generation and RecombinationECEVWe
Michigan - EECS - 320
EECS 32010 Carrier Action Equation of State(chapter 3.4)OutlineUnder external bias:nECEFEFEVpWe need an equation to describe what we have learned so far:need an equation to describe what we have learned so far:Equation of State!Ku/EECS 320C
Michigan - EECS - 320
EECS 32011 PN Junction Electrostatics(chapter 5)OutlineUnder external bias:nECEFEFEVpNow we are ready to apply what we have learned to develop awe are ready to apply what we have learned to developreal diode model.Ku/EECS 320How is PN junct
Michigan - EECS - 320
EECS 32012 PN Junction I-V Characteristics Ideal(chapter 6.1)Forward BiasKu/EECS 320Reverse BiasKu/EECS 320Steady State I-V CharacteristicsDetermine current flow assuming steady state, low-level injectiondepletionregionE0E=0-xpquasi-neutral
Michigan - EECS - 320
EECS 32013 PN Junction I-V Characteristics Non-Ideal(chapter 6.2)Ideal Diode EquationAssumption: G-R negligible in depletion regionResult: JN and JP constant in depletion regionRelate JN(-xP) and JP(xN) for total diode currentI = A J n ( x p ) + J
Michigan - EECS - 320
EECS 32014 PN Junction Transient(chapter 7 & 8)Transient ResponseWhich side is P?VAIIVAV?LargeSmall signalHow fast can the diode respond?fast can the diode respond?Small Signal AC ResponseDetermine equivalent RC circuit to represent diode
Michigan - EECS - 320
EECS 32015 MS Contacts and Schottky Diodes(chapter 14)Metal-Semiconductor JunctionsMetals are used for:Device-level interconnectsinterconnectsComponent-levelinterconnectsDeviceshttp:/www.fibics.com/LargeEELS.htmlMicroprocessor Top View64 Mbit
Michigan - EECS - 320
EECS 32016 Diodes in Optoelectronics(chapter 9)Optoelectronics?Light-emitting DiodeSemiconductor LaserVisible Light SensorSemiconductor Optoelectronic DiodesDetectors convert opticalsignals into electricalsignalsPhotodetectors: primarypurpose
Michigan - EECS - 320
EECS 32017 MOS Fundamentals(chapter 16)Diode versus TransistorTransistorDiodeValve Controls FlowOffOffVariable apertureapertureOnKu/EECS 320TransistorsBipolar (BJT)Field-effect (FET)A transistor in which the output current is controlled by
Michigan - EECS - 320
EECS 32018 MOSFETs IV and device scaling(chapter 17, skip 17.2.3, 17.2.4, 17.3.3)MOSFETFor VG < VT (accumulation &depletion), the carriers in the p-Si areththholes. Because of the reverse biasbetween G-S and G-D, there is noconductance betweenc
Michigan - EECS - 320
EECS 32019 BJT Fundamentals(chapter 10)NPN BJTEmitterCICIBnBasepCollectornBIEEECnnEFpEVPNP BJTEmitterEIEIBpBaseCollectornpBICECnCEFEVppConceptual Operation Of NPN BJT Forward bias base-emitter junction Reverse bi
Michigan - EECS - 320
EECS 32020 BJT Static Characteristics(chapter 11)pnp BJT Ideal I-VReminder:1. Outside the depletion region, no driftOutside the depletion region no driftcurrent.2. Diffusion current satisfies the minoritycarrier diffusion equation for ideal I-V.
Michigan - EECS - 320
Duality and Quantization (EECS 320 Fall 2007)P. C. KuDuality and QuantizationAlthough we will not be teaching nor using formal quantum mechanics in EECS320, theconcept of duality and quantization is still critical and will come in handy at times in th
Michigan - EECS - 320
Fermi Function (EECS 320 Fall 2007)P. C. KuFermi Function (a.k.a. Fermi-Dirac Statistics)In this handout, we will attempt to derive the Fermi function for electrons in thesemiconductor. First lets imagine a game. The setting is as follows. N students
Indiana - ENGLISH - 104
ReferencesHeyn, Sietske. Medicine Net, "Down Syndrome at a Glance." Last modified 2011.Accessed April 9, 2012. http:/www.medicinenet.com/down_syndrome/page8.htmJilg, Justin. DownSyndrome, "History of Down Syndrome." Last modified January 14,2011. Acce
Indiana - ENGLISH - 104
Katelin McClureFIN 101: Extra CreditThe Money Class by Suze OrmanApril 13, 12Without a doubt Suze Orman is one of the most familiar faces in the popular financialmanagement and coaching press. She has her own show that she host on CNBC, and haseven
Indiana - ENGLISH - 104
Being a good parent through adolescence 1Being a Good Parent through AdolescenceKatelin McClureEnglish 104-24Dr. MatukaFebruary 24, 2012Katelin McClureBeing a good parent through adolescence 2AbstractThis paper is about how parents can be good pa
Indiana - ENGLISH - 104
Decision Making using ExcelTo accomplish this task, you will use the What-If analysis. What-if analysis is very crucial tomany business firms as it enables effective decision making to take place. What If analysis canbe performed in Excel. In this even
Indiana - ENGLISH - 104
The first clinical description of Down syndrome ever recorded was written by JohnLangdon Haydon Down in 1866. John Down was the superintendent of an institution in England,which fostered children with mental retardation. The term first given to the dise
Indiana - ENGLISH - 104
It was one of those last night of summer. Where had my summergone? It had seemed like just yesterday I was sitting at graduation, sweatingprofusely. Now, Im spending one last night of summer with the best friendsa girl could ask for.As I drove down to
Indiana - ENGLISH - 104
Annotated Bibliography: ObituaryMarguard, Bryan. "Scott Creelman; sports star became executive at Spalding." BostonGlobe October 19, 2011. early ed. n. pag. Web. 20 Oct. 2011.<http:/articles.boston.com/2011-10-19/bostonglobe/30298702_1_spaldingsports-w
Indiana - ENGLISH - 104
Katelin McClureEnglish 103: Cover LetterOctober 2, 2011Drinking and DrivingWhen writing this letter to fellow teens my age I wanted them to feel my emotion.I didnt want to come off as a negative writer, nor did I want to offend anyone. Teenagersare
Indiana - ENGLISH - 104
Dear Teenage Drivers,It only takes one sip of alcohol for you to be under the influence. Teens acrossAmerica are starting to believe that just because they only had one sip of alcohol ,hoursbefore they were to leave the party, they are suddenly okay to
Indiana - ENGLISH - 104
Katelin McClureEnglish 103: Multi GenreHomesicknessTweetKatelin McClure@KatelinMcClureAll moved in. I didnt want to let go of my parents. This is so tough.#nervous #BallStateRed FlagIs afraid to leave home, misses thecomforts of home and always
Indiana - ENGLISH - 104
Katelin McClureEnglish 103: The Final Cover LetterProfessor HartmanAsItakeastepbackandlookatthebigpictureIrealizethatItrulyam takingalotawayfromthisclass.English103wasmyfirstcollegeEnglishclass.In highschool,Englishwasablow.Nobodytookitseriously,andi
Indiana - ENGLISH - 104
Katelin McClureEnglish 103: Unfamiliar Genre ProjectFive Citations for ObituariesMarguard, Bryan. "Scott Creelman; sports star became executive at Spalding." BostonGlobe October 19, 2011. early ed. n. pag. Web. 20 Oct. 2011.Morrison, John F. "Lawyer,