Documents about Chemical Vapor Deposition
CLEO2004
Georgia Tech, GTG 432
Excerpt: ... Optimizing the Third-Order Optical Susceptibility of Pt-doped BaTi03 Grown by Combustion Chemical Vapor Deposition Stephen E. Ralph', Zhiyong Zhao', David Mattox', Ketan M. Patel', Kenneth B Wise', Amp Polley' . I School ofElectrical and Computer Engineering, Georgia Institute o Technology, Atlanta, f USA Tel: 404-894-5168; Fax: 404-894-4700; stephen.ralph@ece.gatech.edu ' Micrmoatrng Technologies,Inc., 5315 Peachtree Industrial Blvd.Atlanta, GA 30341 Abstract: Optimization of the nonlinear optical properties of metal nano-cluster films imbedded in a nonlinear host is demonstrated using combustion chemical vapor deposition and subsequent 2-scan analysis. 02003 Optical Society of America O C I S codes: (190 4400, 190.3970) 1. Introduction The dramatic enhancement of the nonlinear optical (NLO) properties o f these metal nanocluster films has been reported and the effects have been associated with the metaldielectric interface including plasmon effects.[l]. The inclusion of metal nano-clusters in a nonli ...
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Lecture01d
Texas Tech, PHYS 5335
Excerpt: ... Another "Periodic" Table! Growth Techniques Ch. 1, Sect. 2, YC Czochralski Method (LEC) (Bulk Crystals) Dash Technique Bridgeman Method Chemical Vapor Deposition (CVD) (Thin films; epitaxial film growth) Metal-Organic Chemical Vapor Deposition (MOCVD) Molecular Beam Epitaxy (MBE) (Thin films) Liquid Phase Epitaxy (LPE) (Thin films) Czochralski Method Bridgeman Method a temperature gradient along the crucible growth speed ~ 2 - 3 mm/minute O, C are contaminants! Thin Film Growth (General) High Quality Film (1m or less thickness) deposited on high quality substrate. To minimize strain, need crystal structure of film & substrate to be ~ same (at least very similar) Terminology (epitaxial growth): Homoepitaxy: same structure as substrate Heteroepitaxy: different structure than substrate Thin Film Growth Oh, its your standard "boy meets girl, boy loses girl, boy invents a new deposition technique for ultra-thin film semiconductors, boy gets girl back" story. Chemical Vapor ...
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novellus
Oregon, FINL 473
Excerpt: ... FINANCIAL ANALYSIS NOVELLUS CHEMICAL VAPOR DEPOSITION SYSTEM Ink-Jet Supplies Business Unit (IJBU) is considering installation of a new Chemical Vapor Deposition (CVD) system in its thin-film process. The equipment vendor has represented that the IJBU wafer fab process should realize several important benefits from conversion to the CVD process. In addition to expected improvements in yields, the new equipment should generate savings on ancillary equipment and supplies required in the deposition process. Existing ASM equipment was purchased two years ago for $600,000. It is being depreciated using the Sum-of-the-Years Digits (SYD) method. A five-year life and $60,000 salvage value are being used. Although the existing equipment has a depreciable life of only three more years, its physical (useful) life is expected to extend for five more years. Operating costs of the existing equipment, exclusive of supplies, total $90,000 per year. It could be sold today for $130,000, net of removal and disposition costs. P ...
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Lecture_note_on_CNT
UCSD, ECE 198
Excerpt: ... CNT Synthesis General synthesis Laser Ablation ase blation Arc Discharge Chemical Vapor Deposition Control on CNT morphologies Smallest CNTs Y-shape CNTs Bending CNTs Challenges on CNT synthesis Single wall CNTs vs Multi-wall CNTs Crystalline Carbon The structure of the buckyballs is a spherical polyhedron in which there are 32 faces with 20 hexagonal (6-angled) and 12 pentagonal (5-angled) surfaces. Carbon bonding SP2 orbital - bonds Graphene sheets Graphene If carbon forms bonds with only three other atoms (sp2 hybridization), the remaining valence electron forms a double-bond, also known as a bond. bonds b d are d l delocalized. That i they can b shared over an entire molecule lik li d h is, h be h d i l l like the valence electrons of metal can be shared by all atoms. Ethane is an example, benzene, and conjugated polymers. Delocalized b d provide interesting electrical and optical properties. D l li d bonds id i t ti l t i l d ti l ti Fullerenes and nanotubes have each carbon bonded to three near ...
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Fabrication_lec6-1
Berkeley, EE 130
Excerpt: ... a doped solid film (SiGe or oxide) into Si. In-Situ Doping : Used to dope deposited films during film deposition. Dopant Diffusion Junction depth, xj SiO 2 n-type diffusion layer p-type Si No x 2 / 4 Dt N ( x, t ) = e Dt N : Nd or Na (cm-3) No : dopant atoms per cm2 t : diffusion time D : diffusivity, Dt is the approximate distance of dopant diffusion Dopant Diffusion D increases with increasing temperature. Some applications need very deep junctions (high T, long t). Others need very shallow junctions (low T, short t). Dopant Diffusion Shallow Junction and Rapid Thermal Annealing After ion implantation, thermal annealing is required. Furnace annealing causes too much diffusion of dopant for some applications. In rapid thermal annealing (RTA), the wafer is heated to high temperature in seconds by a bank of heat lamps. Also RTO (oxidation), RTCVD ( chemical vapor deposition ), RTP (processing). Thin-Film Deposition Three Kinds of Solid Crystalline Polycrystalline Amorphous Si ...
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e495out02
Sveriges lantbruksuniversitet, E 495
Excerpt: ... uttering systems Week 9: Thin Film Deposition: Chemical Vapor Deposition ! Theory and operation of Chemical Vapor Deposition (CVD), Plasma Enhanced CVD ! Film thickness measurement and film problems Week 10: Expitaxy CVD and Dry Etching Processes ! Expitaxy (deposition with same crystal structure) & laser CVD ! dry etching processes (Plasma, Sputtering and Reactive Ion) Week 11: Packaging, Yields, Processing Facility Setup and Silicon Foundries ! Testing, dicing of wafers, packaging, bonding, yield theory and measurements. ! Measurement techniques: Optical microscope, Scanning Electron Microscope, energy dispersive analysis of X-rays, Augue analysis, Secondary Ion Mass Spectroscopy (SIMS), Laser Ion Mass Spectroscopy (LIMS), Rutherford Backscatter Spectroscopy (RBS), X-ray diffraction. ! Silicon Foundries Week 12: CMOS and Bipolar Process Integration in practice ! Layer by layer process of sample CMOS and Bipolar structures showing all the processes discussed taking place. ! Yield Analysis ! Using mask design ...
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e495outy
Sveriges lantbruksuniversitet, E 495
Excerpt: ... position: Chemical Vapor Deposition Theory and operation of Chemical Vapor Deposition (CVD), Plasma Enhanced CVD Film thickness measurement and film problems Week 10: Expitaxy CVD and Dry Etching Processes Expitaxy (deposition with same crystal structure) & laser CVD dry etching processes (Plasma, Sputtering and Reactive Ion) Week 11: Packaging, Yields, Processing Facility Setup and Silicon Foundries Testing, dicing of wafers, packaging, bonding, yield theory and measurements. Measurement techniques: Optical microscope, Scanning Electron Microscope, energy dispersive analysis of X-rays, Augue analysis, Secondary Ion Mass Spectroscopy (SIMS), Laser Ion Mass Spectroscopy (LIMS), Rutherford Backscatter Spectroscopy (RBS), X-ray diffraction. Silicon Foundries Week 12: CMOS and Bipolar Process Integration in practice Layer by layer process of sample CMOS and Bipolar structures showing all the processes discussed taking place. Yield Analysis Using mask design tools Wee ...
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e495out1
Sveriges lantbruksuniversitet, E 495
Excerpt: ... tion Theory and operation of Chemical Vapor Deposition (CVD), Plasma Enhanced CVD Film thickness measurement and film problems Week 10: Expitaxy CVD and Dry Etching Processes Expitaxy (deposition with same crystal structure) & laser CVD dry etching processes (Plasma, Sputtering and Reactive Ion) Week 11: Packaging, Yields, Processing Facility Setup and Silicon Foundries Testing, dicing of wafers, packaging, bonding, yield theory and measurements. Measurement techniques: Optical microscope, Scanning Electron Microscope, energy dispersive analysis of X-rays, Augue analysis, Secondary Ion Mass Spectroscopy (SIMS), Laser Ion Mass Spectroscopy (LIMS), Rutherford Backscatter Spectroscopy (RBS), X-ray diffraction. Silicon Foundries Week 12: CMOS and Bipolar Process Integration in practice Layer by layer process of sample CMOS and Bipolar structures showing all the processes discussed taking place. Yield Analysis Using mask design tools Week 13: Future of the processing & Project Presentati ...
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Handout7_Thin Film Deposition
Johns Hopkins, ECE 495
Excerpt: ... 520/530/580.495 Microfabrication Laboratory and 520.773 Advanced Topics in Fabrication and Microengineering Lecture 6 Thin Film Deposition 1 520/530/580.495 Fall 2007 A.G. Andreou and T.H. Wang Deposition Process Physical Deposition Process Evaporation Sputtering Chemical Deposition Process Chemical Vapor Deposition (CVD) Epitaxy 2 520/530/580.495 Fall 2007 A.G. Andreou and T.H. Wang Physical Evaporation Film growth achieved by the accumulation (condensation) of vapor (e.g. Au or Al vapor) onto a cooler substrate. In order to control the composition of the deposited material, evaporation is performed under vacuum condition. Mean free path can play a significant role Vapor Generation Boiling vapor of a molten metal or dielectric materials using a heater (filament or thermal evaporation) Materials are physically knocked and bombarded using an electron-beam (EB evaporation) Deposition rate is proportional to the rate of mass transfer to the surface 520/530/580.495 Fall 2007 A.G. Andreou and T.H. Wa ...
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Exam3Soln2008
Mich Tech, CM 5300
Excerpt: ... CM 5300, Advanced Transport Phenomena Midterm Examination #3, Mass Transport Open Book/Notes Spring 2008 Wed. 30 April, 2008 1. Equations of Continuity for Mass Transfer in Multi-Component Systems For each of the following problem statements, write down the appropriate Equation of Continuity for species A and boundary/initial conditions. State clearly all assumptions and relate the flux (nA) to gradients in mass fractions. Note, use mass concentration form of the Equation of Continuity for these problems in 1. a). Evaporation of Solvent from a Polymer Film: A polymer film formed on an impermeable material contains a solvent (species A) that must be removed by evaporation into a rapidly moving gas stream as shown in Figure 1. Assume that the dimensions of the polymer film are much larger in the z and x directions than in the y direction. The solvent concentration initially in the film is dilute. gas stream y=b Figure 1 polymer/solvent material (impermeable) y=0 b) Chemical Vapor Deposition : Compound semic ...
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Homework3Solution
Georgia Tech, ECE 6450
Excerpt: ... the pressure quoted in table 4.1, the new B would be 2.87 um2/hr. Note that A remains the same (unaffected by pressure changes). Using this new value for B in the above equations, the time required is 1.48 days. Obviously, these are ridiculously long making thermal oxides of this thickness impractical. We will later discuss Chemical Vapor Deposition (CVD) deposited oxides. ...
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Presentation5
Maryland, ENEE 416
Excerpt: ... Plasma Enhanced Chemical Vapor Deposition (PECVD) Pathros Cardenas & David Tung What is Chemical Vapor Deposition ? What is Plasma Enhanced Chemical Vapor Deposition ? CVD process that uses plasma Uses cold plasma Keeps wafers at low temperatures Enhances properties of layers being deposited What is a Plasma? Ionized gas High free electron content Unique state of matter Electric fields energize plasma Cold plasma (not in thermal equilibrium) Where can we find Plasma? The Reaction Gas is introduced Ionized by plasma Diffusions of particles through sheath Electron bombardment onto substrate Absorption of particles Layer formation PECVD Reactors Parallel plate reactor Inductive coupling reactor Advanced parallel plate reactor Tubular reactor Parallel plate reactor Advanced parallel plate reactor Double sided vertical holder reactor Tubular reactor Advantages of using PECVD Low operation temperature Lower chances of cracking deposited layer Good dielectric properties of deposited layer Good step ...
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Chem 298 Review-Final
Wisc Stevens Point, CHEM 298
Excerpt: ... Chem 298 Review for Final Exam The themes you will be tested on will come for the stated course objectives: Explain the interest in nanoscience from a variety of scientific perspectives. o Why would a physicist, chemist, biologist, or average c ...
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abs_106
Allan Hancock College, MDL 112
Excerpt: ... succeeded in fabricating high reliable CNWs using the radical injection plasma enhanced chemical vapor deposition (CVD) system. The initial growth process of their nanostructures is very important to control the morphology. In this study, we have investigated the initial growth process of CNWs employing spectroscopic ellipsometry and laser Raman scattering spectroscopy. It was found that the carbon thin film was first deposited on the substrate, and then the wall structure of graphene sheets was grown. Correlation between the initial growth process and the morphology of CNWs was clarified. Controlling the initial growth stage for design of CNWs morphology is discussed. ...
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psfour05
Wisconsin, ECE 528
Excerpt: ... a chance for you to delve more deeply into a topic and become an expert. A list of suggested topics follows, but you are not restricted to this list: Hot Topics Atmospheric pressure discharges for processing Nanoscale plasma applicationa Microdischarges Plasma etching for MEMS applications Etching of challenging new materials for IC fabrication Dual frequency capacitively coupled discharges Plasma Sources Magnetically enhanced sources RF Inductive Helicon ECR Plasma Torches Plasma Processing Applications Plasma Etching Plasma Polymerization Sputter deposition Plasma-assisted Chemical Vapor Deposition Plasma Spray Plasma Source Ion Implantation Plasma Modification of Surfaces Diagnostics Langmuir Probes Interferometry Optical Diagnostics (Emission, absorption, Laser Induced Flourescence, etc.) Modeling ...
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Problems5
Maryland, ENEE 416
Excerpt: ... Plasma enhanced chemical vapor deposition (PECVD) Questions. Question 1: What are the advantages of using PECVD in semiconductor processing? Question 2: We want to increase the deposition rate of the PECVD process, name a variable that can be changed to meet our goal. Question 3: What is a plasma and what type is used in PECVD process? Question 4: What is a sheath and what does it do? ...
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prelab05
Berkeley, EE 143
Excerpt: ... Prelab #5 This week of lab the TAs will deposit polysilicon on your wafers using a low pressure chemical vapor deposition (LPCVD) process. No student processing will occur this week. Instead, there will be a tour of the microlab located on the 4th floor of Cory Hall near room 406 during the regular lab sections. Updated September 20, 1996 - WAC ...
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POLYMER
Penn State, MCD 18
Excerpt: ... Polymer 46 (2005) 95449548 www.elsevier.com/locate/polymer Polymer Communication Growth of sculptured polymer submicronwire assemblies by vapor deposition Sean Pursel, Mark W. Horn, Melik C. Demirel*, Akhlesh Lakhtakia College of Engineering, Pennsylvania State University, University Park, PA 16802, USA Received 21 April 2005; received in revised form 9 June 2005; accepted 28 July 2005 Available online 18 August 2005 Abstract We have grown helical nanowire assemblies of parylene C, thereby demonstrating that polymeric sculptured thin films (STFs) can be fabricated by a combination of physical and chemical vapor deposition processes. The deposition method is explained in detail and electron micrographs of 200400 nm size sculptured thin film of parylene are given. The shapes of the submicron and nanowire assemblies can be engineered so that the polymeric STF acts as a template for preferential attachment of biomolecules. q 2005 Elsevier Ltd. All rights reserved. Keywords: Parylene; Nanowires; Chemical and ...
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243_21
Berkeley, EE 243
Excerpt: ... EECS 243 Adv. IC Processing Spring 2004 Lecture 21: 03/08/04 A.R. Neureuther Ver 03/07/04 EE 243 Advanced IC Layout and Processing Andrew R. Neureuther Lecture # 21 Deposition: Vacuum and CVD Basic vacuum characteristics Typical values of free path and impingment rate Chemical Vapor Deposition CVD model: transport and surface reaction CVD technology Reading: PDG Chapter 9 Depositon of Thin-Fil ms www.inst.EECS.Berkeley.EDU/~ee243 Copyright 2004, Regents of University of California EECS 243 Adv. IC Processing Spring 2004 Lecture 21: 03/08/04 A.R. Neureuther Ver 03/07/04 Rotary Pump Vacuum Pumps Turbo Molecular Pump Cryogenic Pump Copyright 2004, Regents of University of California 1 EECS 243 Adv. IC Processing Spring 2004 Lecture 21: 03/08/04 A.R. Neureuther Ver 03/07/04 Vacuum Basics 1. Units 1 atmosphere = 760 torr 1 torr = 1 mm Hg 1 mtorr = 1 micron Hg Note: MKS Units 1Pa = 7.5 mtorr = 1 newton/m2 1 bar = 1 Pascals (Pa) = 750 torr or 1 torr = 133.3 Pa 2. Ideal Gas Law: P ...
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e495out03
Sveriges lantbruksuniversitet, E 495
Excerpt: ... echn iques. Week 8: Thin Film Deposition: Evaporation and Sputtering ! Theo retical and ex perim ental ope ration of v acuum sy stems. ! Theory and operation of evaporation and sputtering systems Week 9: Thin Film Deposition: Chemical Vapor Deposition ! Theory and operation of Chemical Vapor Deposition (CVD), Plasma Enhanced CVD ! Film thick ness m easurem ent and film problem s Week 10 : Expitaxy CVD and Dry Etching Processes ! Expitaxy (deposition with same crystal structure) & laser CVD ! dry etching processes (Plasma, Sputtering and Reactive Ion) Week 11 : Packaging, Yields, Processing Facility Setup and Silicon Foundries ! Testing, dicin g of w afers, pack aging, bond ing, yield theory an d m easurem ents. ! Measurement techniques: Optical microscope, Scanning Electron Microscope, energy dispersive analysis of X-ray s, Augue analysis, Secondary Ion M ass Spectroscopy (SIM S), Laser Ion M ass Spectroscopy (LIM S), Rutherford Backscatter Spectroscopy (RBS), X-ray diffraction. ! Silicon Foundries Week 12 : ...
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EE 330 Lect 9 Fall 2008
Iowa State, EE 330
Excerpt: ... moved when developed Exposure Projection through reticle with stepper Alignment is critical ! E-Bean Exposures Eliminate need fro reticle Capacity very small Review from Last Time Deposition Application of something to the surface of the silicon wafer or substrate Layers 15A to 20u thick Methods Physical Vapor Deposition (nonselective) Evaporation/Condensation Sputtering (better host integrity) Chemical Vapor Deposition (nonselective) Reaction of 2 or more gases with solid precipitate Reduction by heating creates solid precipitate (pyrolytic) Screening (selective) For thick films Low Tech, not widely used today Review from Last Time Implantation Application of impurities into the surface of the silicon wafer or substrate - Individual atoms are first ionized (so they can be accelerated) - Impinge on the surface and burry themselves into the upper layers - Often very shallow but with high enough energy can go modestly deep - Causes damage to target on impact - Anne ...
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EE 330 Lect 9 Fall 2007
Iowa State, EE 330
Excerpt: ... posed material removed when developed Positive-exposed material removed when developed Exposure Projection through reticle with stepper Alignment is critical ! E-Bean Exposures Eliminate need fro reticle Capacity very small Review from Last Time Deposition Application of something to the surface of the silicon wafer or substrate Layers 15A to 20u thick Methods Physical Vapor Deposition (nonselective) Evaporation/Condensation Sputtering (better host integrity) Chemical Vapor Deposition (nonselective) Reaction of 2 or more gases with solid precipitate Reduction by heating creates solid precipitate (pyrolytic) Screening (selective) For thick films Low Tech, not widely used today Review from Last Time Implantation Application of impurities into the surface of the silicon wafer or substrate - Individual atoms are first ionized (so they can be accelerated) - Impinge on the surface and burry themselves into the upper layers - Ofte ...
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lecture23-F04
Berkeley, EE 40
Excerpt: ... m EECS40, Fall 2004 Lecture 23, Slide 18 Prof. White Selective Oxidation Techniques Window Oxidation Local Oxidation (LOCOS) EECS40, Fall 2004 Lecture 23, Slide 19 Prof. White Chemical Vapor Deposition (CVD) of SiO2 SiH 4 + O2 SiO2 + 2H 2 Temperature range: 350oC to 450oC for silane Process: Precursor gases dissociate at the wafer surface to form SiO2 No Si on the wafer surface is consumed Film thickness is controlled by the deposition time EECS40, Fall 2004 Lecture 23, Slide 20 "LTO" oxide thickness t time, t Prof. White Chemical Vapor Deposition (CVD) of Si Polycrystalline silicon ("poly-Si"): Like SiO2, Si can be deposited by Chemical Vapor Deposition : Wafer is heated to ~600oC Silicon-containing gas (SiH4) is injected into the furnace: SiH4 = Si + 2H2 Si film made up of crystallites SiO2 Silicon wafer Properties: sheet resistance (heavily doped, 0.5 m thick) = 20 / can withstand high-temperature anneals major advantage EECS40, Fall 2004 Lecture 23, Slide 21 Prof. Wh ...
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lecture17
Berkeley, EE 40
Excerpt: ... es Window Oxidation Local Oxidation (LOCOS) EE40 Summer 2006: Lecture 17 Instructor: Octavian Florescu 14 Chemical Vapor Deposition (CVD) of SiO2 SiH 4 + O2 SiO 2 + 2H 2 Temperature range: 350oC to 450oC for silane Process: Precursor gases dissociate at the wafer surface to form SiO2 No Si on the wafer surface is consumed Film thickness is controlled by the deposition time EE40 Summer 2006: Lecture 17 oxide thickness t time, t Instructor: Octavian Florescu 15 Chemical Vapor Deposition (CVD) of Si Polycrystalline silicon (poly-Si): Like SiO2, Si can be deposited by Chemical Vapor Deposition : Wafer is heated to ~600oC Silicon-containing gas (SiH4) is injected into the furnace: SiH4 = Si + 2H2 Si film made up of crystallites SiO2 Silicon wafer Properties: sheet resistance (heavily doped, 0.5 m thick) = 20 / can withstand high-temperature anneals EE40 Summer 2006: Lecture 17 major advantage 16 Instructor: Octavian Florescu Physical Vapor Deposition (Spu ...
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