Berkeley, EE 141
Excerpt: ... How to extract parasitic capacitance ? Please refer to lab3 tutorial extraction section. To extract the parasitic capacitance , click on the "Set Switches" and select Extract_parasitic_caps as shown below. That is the only difference from the tutorial in lab 3. Note that capacitance under 2fF is ignored. Then just follow the lab 3 tutorial on how to get the netlist. ...
Berkeley, EE 105
Excerpt: ... Supplemental Part for Lab 3 Find the parasitic capacitance in our metal runner 1. Use signal generator to insert a 1Vp-p, 1KHz sinusoidal waveform into PIN#13 of Lab Chip 1. Use oscilloscope to observe the waveforms at PIN#13 (input) and PIN#15 (output). Please note that the references of the oscilloscope probes and the signal generator should all be connected to PIN#14 (VSS). Write down the magnitudes of the input and output waveforms and the phase shift (if any) under this frequency. 2. Keep increasing the input frequency and observe the waveforms. When dose the magnitude of output become 0.707 times that of the input? What is the phase shift under this frequency? Why do we choose the value 0.707 here? 3. Keep increasing the input frequency till you reach the maximum frequency the generator could generate. Carefully record the values of magnitude and phase shift around the break frequency . Sketch the Bode plot by using the values of magnitude and phase shift you just recorded. 4. By using the ...
Georgia Tech, ECE 4430
Excerpt: ... licon dioxide, FOX, TOX, IOX, polysilicon, metal, etc. Be able to find the parasitic capacitance from a MOSFET or BJT terminal to ground Be able to find the bulk resistance between the actual MOSFET or BJT to its external terminals Be able to identify a circuit from a layout How a passive component is made from MOS or BJT technologies Be able to identify the cross-section of a passive component Know the typical values and accuracies of passive components Purpose and definition of design rules Be able to connect the physical aspects of the active and passive components to their performance. The examples in Lectures 210 and 215 are a good study guide for this exam. The exam will be proctored by Susanta Sengupta because Dr. Allen will not be in town on the 16th. Office hours for Dr. Allen are Monday 12-1pm and Wednesday 11-12 noon. ...
Iowa State, EE 508
Excerpt: ... l input and output OTAs Parasitic Capacitance s and Floating Nodes R2 R3 CP1 CP2 C1 R1 C2 VOUT CP3 VIN CP4 1 1 2 OUT P2 P3 2 P4 There is invariably a parasitic capacitance associated with every terminal of every element in a filter These parasitic capacitance s can be significant in integrated filters These can be combined into a single parasitic capacitance on each node IN P1 Parasitic Capacitance s and Floating Nodes R2 R3 CP1 CP2 C1 R1 C2 VOUT CP3 VIN CP4 A floating node is a node that is not connected to either a zeroimpedance element or across a null-port Floating nodes are generally avoided in integrated filters because the parasitic capacitance s on the floating nodes usually degrades filter performance and often increases the order of the filter Some filter architectures inherently have no floating nodes, specifically, most of the basic integrator-based filters have no floating nodes Parasitic Capacitance s and Floating Nodes Parasitic Capacitance s and Floating Nodes No floating nodes ! Sign ...
CSU Sacramento, EEE 244
Excerpt: ... EEE 244 Homework 4 Due Wednesday, 4/11/07 The Problem Parasitic Capacitance between circuit boards and ground planes can be a troublesome source of power consumption and/or increased delay time in circuit operations. The figure above shows the surface charge density distribution (rhos) in nC/cm2 on a 4 cm x 6 cm ground plane located just below a circuit board in an instrument enclosure. The ground plane is at a potential of 5 V with respect to the circuit board, and the parasitic capacitance in this case can be found from C = Q/V where Q is the total charge on the ground plane. You are asked to use the "Cell by Cell" approach to numerical surface integration, which was illustrated using the Trapezoidal rule in class. Write a MATLAB m-file program to find Q = (rhos)ds and calculate the parasitic capacitance , C, for this circuit/ground s plane arrangement, using Simpson's 1/3 rule. Then write one that uses a combination of Simpson's 1/3 and Simpson's 3/8 rules. Include appropriate Romberg error correction ...
University of Florida, EEL 5225
Excerpt: ... EEL5225: Principles of MEMS Transducers (Fall 2003) Instructor: Dr. Hui-Kai Xie Accelerometers Capacitive Position Sensing Circuits for Capacitive Sensing ADI Capacitive Accelerometers Other MEMS Accelerometers Reading: Senturia, Chapter 19, p.497-530 Note: Most of figures in this lecture are copied from Senturia, Microsystem Design, Chapter 19. EEL5225: Principles of MEMS Transducers (Fall 2003) Lecture 33 by 11/24/2003 1 H.K. Xie 11/24/2003 Capacitive Position Sensing Capacitive Position Sensing MEMS Capacitive Sensors: High impedance Small sensing capacitance Very small signal Parasitic capacitance Noise 11/24/2003 EEL5225: Principles of MEMS Transducers (Fall 2003) 2 Differential Capacitive Sensing V0 = Vs + = C1 ( 2Vs ) C1 + C2 C1 C2 Vs C1 + C2 Differential Capacitive Sensing First order cancellation of many effects Temperature variations Common mode rejection 11/24/2003 EEL5225: Principles of MEMS Transducers (Fall 2003) 3 Circuits for Capacitive Sensing Interf ...
New Mexico, ECE 650
Excerpt: ... VERSITY O F U M B C 1966 UMBC MO 4 (5/1/07) RE COUNT Y UN Digital Systems Clock Distribution II CMPE 650 Clock Signal Duty Cycle This circuit computes the average DC value and stores it on C2. The value on C2 adjusts the input switching threshold to achieve an output duty cycle closer to 50%. Canceling Parasitic Capacitance of Clock Repeaters Adding a device to the clock wire adds parasitic capacitance , which shifts the received clock phase on all devices on the line. This circuit can be used to combat the parasitic capacitance . Clock input VCC R1 R2 100K 100K L1 C1 Cp parasitic capacitance of circuit trace, connector and gate. M AR YLAND BA L TI IVERSITY O F U M B C 1966 UMBC MO 5 (5/1/07) RE COUNT Y UN Digital Systems Clock Distribution II CMPE 650 Canceling Parasitic Capacitance of Clock Repeaters The inductor presents a negative reactance at the clock frequency and partially cancels the parasitic capacitance of the clk receiver circuit. This is called a matching network. Note ...
W. Alabama, ECE 637
Excerpt: ... ECE 637 Integrated VLSI Circuits Introduction EE141 Introduction 1 Course Details Instructor Mohab Anis; manis@vlsi.uwaterloo.ca Text Digital Integrated Circuits, Jan Rabaey, Prentice Hall, 2nd edition Grading Project 35%, Presentation 15%, Final 50% EE141 Introduction 2 Course Outline Introduction this lecture (1) Diode (3) Static behavior; Parasitic capacitance s and dynamic behavior; Secondary effects & SPICE model MOS Transistor (6) Static behavior; Parasitic capacitance s and dynamic behavior; Short channel effects; scaling; SPICE MOS models; Process variations & process impact MOS Inverter (7) Properties; Static behavior; Dynamic behavior; Power, energy consumption and power-delay, energy-delay products; Layout considerations/design rules EE141 Introduction 3 Course Outline (Contd.) Combinational Circuits (8) Implementation styles - static, ratioed, pass transistor; CPL, dynamic logic ; Signal integrity issues in dynamic circuits; Cascading dynamic circuits; Low power, high performanc ...
Concordia Canada, COEN 6511
Excerpt: ... Objectives What affects CMOS circuit performance? And how do we characterize its elements. What are the parasitic capacitance s? What is a SPICE model for a transistor ? What are the rise time and fall time How do we model a load? How do we calculate delays CONCORDIA VLSI DESIGN LAB ...
Berkeley, EE 105
Excerpt: ... itic capacitance to the substrate from the drain regions of inverter 1 and the interconnections between the output of inverter 1 and the inputs of inverters 2 and 3. V DD W L p2 s Hand calculation of propagation delays: use approximation that input changes instantaneously VIN VOH tCYCLE VIN VDD V DD W L p1 + CL VOUT VIN 1 W L n1 2 W L n2 VDD W L p3 3 VOL t VOUT VOH 50% VOL t tCYCLE tPHL tPLH VOH s (a) (b) W L n3 For hand calculation, we do a worst case estimate of CG by adding the maximum gate capacitances for inverters 2 and 3 C G = C ox [ ( W L ) p2 + ( W L ) + ( W L ) p3 + ( W L ) ] n2 n3 EECS 105 Fall 1998 Lecture 16 EECS 105 Fall 1998 Lecture 16 Parasitic Capacitance from Drain Depletion Regions s Calculation of Parasitic Depletion Capacitance s The drain n and p regions have depletion regions whose stored charge changes during the transient. Take the worst case and use the zero-bias depletion capacitance (the maximum value) as a linear charge-storage element during th ...
N.C. State, ECE 546
Excerpt: ... ECE 546 VLSI Final Project Report (Group 30) A 2 GHz 48 bit Multi-Ports SRAM Design in 45 nm CMOS Fabrication Process Chun-Ying Huang, Ho-Hsin Yeh, Seung Kyun Heo Introduction 1 The appealing point of the static circuit is the low power consumption, compared with dynamic circuits. In order to drive the larger parasitic capacitance s in the word lines, the sizes of the transistors are optimized. Fig 7 presents the column decoder and multiplexer circuitry. The sizing of the transistors also needs careful optimization in order to drive the larger parasitic capacitive loads in the bit lines. Fig 8 presents the Flip-Flops used to hold the data in the outputs. The Flip-Flops are implemented with TSPCL D Flip Flops. This circuit is originally the TSPC flip flop. Additional transistor added in TSPC will make this dynamic edge triggered flip flop be susceptible of the noise [2] [3]. According to this SRAM design, only one type of the circuit, which is the edge triggered flip flop, needs the clocking input. The inserti ...