Documents about Parasitic Capacitance

  • 1 Pages

    parasitic_extraction

    Berkeley, EE 141

    Excerpt: ... How to extract parasitic capacitance ? Please refer to lab3 tutorial extraction section. To extract the parasitic capacitance , click on the "Set Switches" and select Extract_parasitic_caps as shown below. That is the only difference from the tutorial in lab 3. Note that capacitance under 2fF is ignored. Then just follow the lab 3 tutorial on how to get the netlist. ...

  • 1 Pages

    Exp3.supplement

    Berkeley, EE 105

    Excerpt: ... Supplemental Part for Lab 3 Find the parasitic capacitance in our metal runner 1. Use signal generator to insert a 1Vp-p, 1KHz sinusoidal waveform into PIN#13 of Lab Chip 1. Use oscilloscope to observe the waveforms at PIN#13 (input) and PIN#15 (output). Please note that the references of the oscilloscope probes and the signal generator should all be connected to PIN#14 (VSS). Write down the magnitudes of the input and output waveforms and the phase shift (if any) under this frequency. 2. Keep increasing the input frequency and observe the waveforms. When dose the magnitude of output become 0.707 times that of the input? What is the phase shift under this frequency? Why do we choose the value 0.707 here? 3. Keep increasing the input frequency till you reach the maximum frequency the generator could generate. Carefully record the values of magnitude and phase shift around the break frequency . Sketch the Bode plot by using the values of magnitude and phase shift you just recorded. 4. By using the ...

  • 1 Pages

    Exam3Info

    Georgia Tech, ECE 4430

    Excerpt: ... licon dioxide, FOX, TOX, IOX, polysilicon, metal, etc. Be able to find the parasitic capacitance from a MOSFET or BJT terminal to ground Be able to find the bulk resistance between the actual MOSFET or BJT to its external terminals Be able to identify a circuit from a layout How a passive component is made from MOS or BJT technologies Be able to identify the cross-section of a passive component Know the typical values and accuracies of passive components Purpose and definition of design rules Be able to connect the physical aspects of the active and passive components to their performance. The examples in Lectures 210 and 215 are a good study guide for this exam. The exam will be proctored by Susanta Sengupta because Dr. Allen will not be in town on the 16th. Office hours for Dr. Allen are Monday 12-1pm and Wednesday 11-12 noon. ...

  • 27 Pages

    EE 508 Lect 39 Fall 2008

    Iowa State, EE 508

    Excerpt: ... l input and output OTAs Parasitic Capacitance s and Floating Nodes R2 R3 CP1 CP2 C1 R1 C2 VOUT CP3 VIN CP4 1 1 2 OUT P2 P3 2 P4 There is invariably a parasitic capacitance associated with every terminal of every element in a filter These parasitic capacitance s can be significant in integrated filters These can be combined into a single parasitic capacitance on each node IN P1 Parasitic Capacitance s and Floating Nodes R2 R3 CP1 CP2 C1 R1 C2 VOUT CP3 VIN CP4 A floating node is a node that is not connected to either a zeroimpedance element or across a null-port Floating nodes are generally avoided in integrated filters because the parasitic capacitance s on the floating nodes usually degrades filter performance and often increases the order of the filter Some filter architectures inherently have no floating nodes, specifically, most of the basic integrator-based filters have no floating nodes Parasitic Capacitance s and Floating Nodes Parasitic Capacitance s and Floating Nodes No floating nodes ! Sign ...

  • 1 Pages

    EEE244HW4S07

    CSU Sacramento, EEE 244

    Excerpt: ... EEE 244 Homework 4 Due Wednesday, 4/11/07 The Problem Parasitic Capacitance between circuit boards and ground planes can be a troublesome source of power consumption and/or increased delay time in circuit operations. The figure above shows the surface charge density distribution (rhos) in nC/cm2 on a 4 cm x 6 cm ground plane located just below a circuit board in an instrument enclosure. The ground plane is at a potential of 5 V with respect to the circuit board, and the parasitic capacitance in this case can be found from C = Q/V where Q is the total charge on the ground plane. You are asked to use the "Cell by Cell" approach to numerical surface integration, which was illustrated using the Trapezoidal rule in class. Write a MATLAB m-file program to find Q = (rhos)ds and calculate the parasitic capacitance , C, for this circuit/ground s plane arrangement, using Simpson's 1/3 rule. Then write one that uses a combination of Simpson's 1/3 and Simpson's 3/8 rules. Include appropriate Romberg error correction ...

  • 1 Pages

    test2_study_guide

    Mississippi State, ECE 4263

    Excerpt: ... ECE 4263 (VLSI) Test 2 Study Guide The test is closed book/closed notes. a. Be able to size a static CMOS gate for equal TPLH, TPHL delay. b. Be able to give the definitions of TPLH, TPHL for a gate, and specify a method for measuring these values. c. Understand the definition of contamination (shortest-path) delay and how to measure it. d. Be able to compute the RC Elmore Delay for a complex static MOS gate using drain/source parasitic capacitance s and gate load capacitance (this means that you understand the RC model of a static CMOS gate) e. Be able to explain how to determine from simulation a method for determining pullup/pulldown inverter ratios that optimize the average delay through a chain of inverters. f. Be able to use the simple K model to model gate delay (delay = no-load delay + K*C load) g. Be able to explain and use the 2D- lookup table for propagation delay through a chain of gates. h. Be able to use/explain a greedy gate sizing algorithm for improving delay for a chain of gates. i. Be ...

  • 24 Pages

    Lecture33

    University of Florida, EEL 5225

    Excerpt: ... EEL5225: Principles of MEMS Transducers (Fall 2003) Instructor: Dr. Hui-Kai Xie Accelerometers Capacitive Position Sensing Circuits for Capacitive Sensing ADI Capacitive Accelerometers Other MEMS Accelerometers Reading: Senturia, Chapter 19, p.497-530 Note: Most of figures in this lecture are copied from Senturia, Microsystem Design, Chapter 19. EEL5225: Principles of MEMS Transducers (Fall 2003) Lecture 33 by 11/24/2003 1 H.K. Xie 11/24/2003 Capacitive Position Sensing Capacitive Position Sensing MEMS Capacitive Sensors: High impedance Small sensing capacitance Very small signal Parasitic capacitance Noise 11/24/2003 EEL5225: Principles of MEMS Transducers (Fall 2003) 2 Differential Capacitive Sensing V0 = Vs + = C1 ( 2Vs ) C1 + C2 C1 C2 Vs C1 + C2 Differential Capacitive Sensing First order cancellation of many effects Temperature variations Common mode rejection 11/24/2003 EEL5225: Principles of MEMS Transducers (Fall 2003) 3 Circuits for Capacitive Sensing Interf ...

  • 8 Pages

    clk_dist2

    New Mexico, ECE 650

    Excerpt: ... VERSITY O F U M B C 1966 UMBC MO 4 (5/1/07) RE COUNT Y UN Digital Systems Clock Distribution II CMPE 650 Clock Signal Duty Cycle This circuit computes the average DC value and stores it on C2. The value on C2 adjusts the input switching threshold to achieve an output duty cycle closer to 50%. Canceling Parasitic Capacitance of Clock Repeaters Adding a device to the clock wire adds parasitic capacitance , which shifts the received clock phase on all devices on the line. This circuit can be used to combat the parasitic capacitance . Clock input VCC R1 R2 100K 100K L1 C1 Cp parasitic capacitance of circuit trace, connector and gate. M AR YLAND BA L TI IVERSITY O F U M B C 1966 UMBC MO 5 (5/1/07) RE COUNT Y UN Digital Systems Clock Distribution II CMPE 650 Canceling Parasitic Capacitance of Clock Repeaters The inductor presents a negative reactance at the clock frequency and partially cancels the parasitic capacitance of the clk receiver circuit. This is called a matching network. Note ...

  • 23 Pages

    lecture-15_mar2-2006

    UCSC, EE 171

    Excerpt: ... Amplifier: Frequency Response Bode plot Miller effect High frequency response Low frequency response Figure 8.1 Low-pass RC filter. Figure 8.2 Logarithmic frequency scale. Figure 8.3 Bode plot for the low-pass RC filter. Figure 8.4 Bode plot for phase of the low-pass RC filter. Figure 8.5 Circuit for Example 8.1. Figure 8.6 Bode plots of the terms on the right-hand side of Equation (8.19). Figure 8.7 Bode plot of the magnitude of Av for the circuit of Figure 8.5. Figure 8.8 Approximate plots of the terms of Equation (8.20). Figure 8.9 Bode phase plot of the voltage-transfer function for the circuit of Figure 8.5. High frequency FET model with parasitic capacitance s Small signal model should include the parasitic capacitance s of the device to determine the frequency response. High-frequency FET equivalent circuit. We can draw the small signal equivalent circuit for the common source amplifier given below. Common-source amplifier. Using same node equations as before, we can find ...

  • 21 Pages

    photran_31-Jan-2005

    Purdue, JONES 105

    Excerpt: ... Preamp Model 50 load, 50 mV/div preamp, 50 mV/div output, 500 mV/div Response to 0.01 nC pulse 5 Preamp Model 50 load, 200 mV/div preamp, 200 mV/div output, 1 V/div Soft saturation properly modeled Response to 0.05 nC pulse 6 Preamp Model Gain response parameterized as in CDF Note 5362: Hard saturation 27 C Soft saturation 47 C 57 C High gain region 7 Preamp Model Measured parameters: Simulation: 8 Preamp Model Comparison of gain parameters with measured distributions: Small signal differential gain Large signal differential gain SPICE model Gain switching threshold Width of gain switching region 9 Preamp Model Comparison of node voltages: Small differences are not likely to affect small signal gain. 10 Preamp Model Probable unknowns: Supply voltages in the detector Measure them next time the plugs are open Temperature in the detector No simulation of parasitic capacitance Parameters for gain switching diode model Qualitative behavior seems reasonable. ...

  • 22 Pages

    photran_31-Jan-2005

    Purdue, JONES 105

    Excerpt: ... ut, 1 V/div Soft saturation properly modeled Response to 0.05 nC pulse 6 Gain response parameterized as in CDF Note 5362: Hard saturation 27 37 C 47 C 57 C High gain region C Soft saturation 7 Measured parameters: Simulation: 8 Comparison of gain parameters with measured distributions: Small signal differential gain Large signal differential gain SPICE model Gain switching threshold Width of gain switching region 9 Comparison of node voltages: Small differences are not likely to affect small signal gain. 10 Probable unknowns: Supply voltages in the detector Measure them next time the plugs are open Temperature in the detector No simulation of parasitic capacitance Parameters for gain switching diode model Qualitative behavior seems reasonable. Small signal response agrees well with measurements and should be adequately described. 11 SPICE3 simulation now interfaced with photon transport Monte Carlo: Response to 1 MIP through bar at z=0. This is an important achievement! 12 PM ...

  • 23 Pages

    intro_637

    W. Alabama, ECE 637

    Excerpt: ... ECE 637 Integrated VLSI Circuits Introduction EE141 Introduction 1 Course Details Instructor Mohab Anis; manis@vlsi.uwaterloo.ca Text Digital Integrated Circuits, Jan Rabaey, Prentice Hall, 2nd edition Grading Project 35%, Presentation 15%, Final 50% EE141 Introduction 2 Course Outline Introduction this lecture (1) Diode (3) Static behavior; Parasitic capacitance s and dynamic behavior; Secondary effects & SPICE model MOS Transistor (6) Static behavior; Parasitic capacitance s and dynamic behavior; Short channel effects; scaling; SPICE MOS models; Process variations & process impact MOS Inverter (7) Properties; Static behavior; Dynamic behavior; Power, energy consumption and power-delay, energy-delay products; Layout considerations/design rules EE141 Introduction 3 Course Outline (Contd.) Combinational Circuits (8) Implementation styles - static, ratioed, pass transistor; CPL, dynamic logic ; Signal integrity issues in dynamic circuits; Cascading dynamic circuits; Low power, high performanc ...

  • 70 Pages

    EE 435 Lect 43 Spring 2009

    Iowa State, EE 435

    Excerpt: ... T)=VOUT(nT)-(C1/C)VIN(nT) C - 1 C I( z ) = z-1 Switched-capacitor circuits are analyzed in the z-domain rather than in the s-domain Coefficients are precisely controlled with small area even if TCLK is not much smaller than TSIG Assumption of input S/H is really not necessary Often no underlying Active RC circuit (direct synthesis in the discrete domain) SC circuits are discrete-time continuous-amplitude circuits Switched-Capacitor Filters Parasitic Capacitance s Parasitic capacitance s are large, do not match, and most are nonlinear ! Switched-Capacitor Filters Parasitic Capacitance s Parasitics affecting charge transfer are indicated CP=Cs1+Cd2+CT1 VOUT(nT+T) = VOUT(nT) - ([C1+CP]/C)VIN(nT) Can affect the ratio C1/CP by 30% or more Most of the accuracy improvements offered by SC technique lost in parasitics ! Switched-Capacitor Filters Consider: with input S/H VOUT(nT+T) = VOUT(nT) + (C1/C)VIN(nT) C1 C I( z ) = ...

  • 1 Pages

    L5_objectives

    Concordia Canada, COEN 6511

    Excerpt: ... Objectives What affects CMOS circuit performance? And how do we characterize its elements. What are the parasitic capacitance s? What is a SPICE model for a transistor ? What are the rise time and fall time How do we model a load? How do we calculate delays CONCORDIA VLSI DESIGN LAB ...

  • 6 Pages

    093098_lecture16

    Berkeley, EE 105

    Excerpt: ... itic capacitance to the substrate from the drain regions of inverter 1 and the interconnections between the output of inverter 1 and the inputs of inverters 2 and 3. V DD W L p2 s Hand calculation of propagation delays: use approximation that input changes instantaneously VIN VOH tCYCLE VIN VDD V DD W L p1 + CL VOUT VIN 1 W L n1 2 W L n2 VDD W L p3 3 VOL t VOUT VOH 50% VOL t tCYCLE tPHL tPLH VOH s (a) (b) W L n3 For hand calculation, we do a worst case estimate of CG by adding the maximum gate capacitances for inverters 2 and 3 C G = C ox [ ( W L ) p2 + ( W L ) + ( W L ) p3 + ( W L ) ] n2 n3 EECS 105 Fall 1998 Lecture 16 EECS 105 Fall 1998 Lecture 16 Parasitic Capacitance from Drain Depletion Regions s Calculation of Parasitic Depletion Capacitance s The drain n and p regions have depletion regions whose stored charge changes during the transient. Take the worst case and use the zero-bias depletion capacitance (the maximum value) as a linear charge-storage element during th ...

  • 4 Pages

    grp30

    N.C. State, ECE 546

    Excerpt: ... ECE 546 VLSI Final Project Report (Group 30) A 2 GHz 48 bit Multi-Ports SRAM Design in 45 nm CMOS Fabrication Process Chun-Ying Huang, Ho-Hsin Yeh, Seung Kyun Heo Introduction 1 The appealing point of the static circuit is the low power consumption, compared with dynamic circuits. In order to drive the larger parasitic capacitance s in the word lines, the sizes of the transistors are optimized. Fig 7 presents the column decoder and multiplexer circuitry. The sizing of the transistors also needs careful optimization in order to drive the larger parasitic capacitive loads in the bit lines. Fig 8 presents the Flip-Flops used to hold the data in the outputs. The Flip-Flops are implemented with TSPCL D Flip Flops. This circuit is originally the TSPC flip flop. Additional transistor added in TSPC will make this dynamic edge triggered flip flop be susceptible of the noise [2] [3]. According to this SRAM design, only one type of the circuit, which is the edge triggered flip flop, needs the clocking input. The inserti ...