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EE 143 - Berkeley Study Resources
  • 13 Pages EE143_Midterm1_Solns_Sp08
    EE143_Midterm1_Solns_Sp08

    School: Berkeley

  • 4 Pages hw 10 solutions
    Hw 10 Solutions

    School: Berkeley

    Course: Microfabrication Technology

  • 3 Pages Midterm 2 Solutions 03
    Midterm 2 Solutions 03

    School: Berkeley

    Course: Microfabrication Technology

    EE143 Midterm Exam #2 Solutions Problem 1 (a) (i )Let translational error be (xt, yt). After subtracting the translational error, we have: Top x y Right +3 -xt +3 - yt Center 0 0 Left -2 -xt +1 - yt Fall 2003 Bottom Since thermal run out/in error is antis

  • 9 Pages Midterm 2 04
    Midterm 2 04

    School: Berkeley

    Course: Microfabrication Technology

  • 11 Pages Midterm 2 Solutions 11
    Midterm 2 Solutions 11

    School: Berkeley

    Course: Microfabrication Technology

    EE143 Microfabrication Technology Spring 2011 Prof. J. Bokor Midterm Exam 2 Name: -=~- Signature: _ SID: _ l' CLOSED BOOK. TWO 8 1/2" X 11" SHEET OF NOTES, AND SCIENTIFIC POCKET CALCULATOR PERMITTED. MAKE SURE THE EXAM PAPER HAS PAGES. DO ALL WORK ON THE

  • 12 Pages Midterm 10
    Midterm 10

    School: Berkeley

    Course: Microfabrication Technology

    EE 143 C. Nguyen MIDTERM EXAM March 18, 2010 NAME _ INSTRUCTIONS Read all of the instructions and all of the questions before beginning the exam. There are 4 problems on this midterm exam, totaling 100 points. The tentative credit for each part is given

  • 12 Pages Midterm 1 Solutions 12
    Midterm 1 Solutions 12

    School: Berkeley

    Course: Microfabrication Technology

    EE143 Microfabrication Technology Spring 2012 Prof. 1. Bokor Midterm Exam 1 Name: -~- Signature: _ SID: _ CLOSED BOOK. ONE 8 112" X 11" SHEET OF NOTES, AND SCIENTIFIC POCKET CALCULATOR PERMITTED. MAKE SURE THE EXAM PAPER HAS 12 PAGES. DO ALL WORK ON THE E

  • 10 Pages MIdterm 2 Solutions 12
    MIdterm 2 Solutions 12

    School: Berkeley

    Course: Microfabrication Technology

    EE143 Microfabrication Technology Spring 2012 Prof. J. Bokor Midterm Exam 2 Name: So lu+i 0 (\5 , -=~=-~- Signature: SID: _ - CLOSED BOOK. ONE 8 112" X 11" SHEET OF NOTES, AND SCIENTIFIC POCKET CALCULATOR PERMITTED. MAKE SURE THE EXAM PAPER HAS 10 PAGES.

  • 3 Pages Midterm 1 Solutions 04
    Midterm 1 Solutions 04

    School: Berkeley

    Course: Microfabrication Technology

    EE143 Fall 2004 Midterm 1 solutions Problem 1 (i ) Three lithography steps are used in this process flow. Mask 1: Pattern Poly-1 hinge plate Mask 2: Pattern the staple anchor openings through bottom PSG Mask 3: Pattern the Poly-2 staple (ii) Four CVD step

  • 18 Pages Final Exam 10
    Final Exam 10

    School: Berkeley

    Course: Microfabrication Technology

    EE 143 C. Nguyen FINAL EXAM May 10, 2010 NAME _ INSTRUCTIONS Read all of the instructions and all of the questions before beginning the exam. There are 5 problems on this Final Exam, totaling 143 points. The tentative credit for each part is given to he

  • 15 Pages Final Exam Solutions 11
    Final Exam Solutions 11

    School: Berkeley

    Course: Microfabrication Technology

    -EE143 Microfabrication Technology Spring 2011 Prof. J. Bokor Final Exam Name: -~-Signature: - SID: -CLOSED BOOK. THREE 8 112" X 11" SHEET OF NOTES, AND SCIENTIFIC POCKET CALCULATOR PERMITTED. MAKE SURE THE EXAM PAPER HAS 15 PAGES. DO ALL WORK ON THE EXAM

  • 3 Pages Midterm 1 Solutions 03
    Midterm 1 Solutions 03

    School: Berkeley

    Course: Microfabrication Technology

    Midterm Exam #1 Solutions Problem 1 (a) Cross-section along B-B EE143, Fall F2003 Poly-Si Gate oxide Al SiO2 (FOX) p (channel stop) CVD SiO2 p (channel stop) p- substrate (b) Cross-section along C-C Al CVD SiO2 CVD SiO2 SiO2 (FOX) p (channel stop) n+ p (c

  • 14 Pages Exam 1 Solutions 08
    Exam 1 Solutions 08

    School: Berkeley

    Course: Microfabrication Technology

    UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EECS 143 Professor Ali Javey Fall 2008 Exam 1 Answer Key Name: _ SID: 1337 _ Closed book. One sheet of notes is allowed. There are a total of 13 pag

  • 4 Pages hw 9 solutions
    Hw 9 Solutions

    School: Berkeley

    Course: Microfabrication Technology

    EE 143 MICROFABRICATION TECHNOLOGY SPRING 2010 C. Nguyen PROBLEM SET #9 SOLUTION 1. Referring to the layout and process flow in HW#8, answer the following questions. a) Why did we etch the oxide before well drive-in in step 5.2? To create p-well pattern f

  • 5 Pages hw 8 solutions
    Hw 8 Solutions

    School: Berkeley

    Course: Microfabrication Technology

    EE 143 MICROFABRICATION TECHNOLOGY SPRING 2010 C. Nguyen PROBLEM SET #8 SOLUTION 1. The following pages comprise an actual pwell CMOS process flow with poly-to-poly capacitors. No details are spared in this flow; even equipment names are given, as are dia

  • 4 Pages hw 7 solutions
    Hw 7 Solutions

    School: Berkeley

    Course: Microfabrication Technology

    EE 143 MICROFABRICATION TECHNOLOGY SPRING 2010 C. Nguyen PROBLEM SET #7 SOLUTION 1. An ion implanter with an accelerating voltage of 50 kV is used to implant the following ions into Si to an ion dose of 1015 ions/cm2: (1) B+; (2) B2+; (3) B2+ ; (4) (BF2)2

  • 3 Pages Sample_Exam_1_Answers
    Sample_Exam_1_Answers

    School: Berkeley

    a) The intrinsic carrier concentration is calculated by integrating the Fermi function / density of states function product. Using this fact, explain why the intrinsic carrier concentration increases with increasing temperature. The Fermi function br

  • 1 Page EE143quiz1-wed-ans
    EE143quiz1-wed-ans

    School: Berkeley

    EE 143: Lab Quiz 1 Fall 2008, University of California, Berkeley 1. Which type of photoresist (positive or negative) do we use in this lab? What happens to this type of resist in the areas that are exposed to light? (2 points) 2. a) Which type of o

  • 1 Page EE143quiz1-fri-ans
    EE143quiz1-fri-ans

    School: Berkeley

    .renniht ti sekam gnihcte-revo os ,dnalsi na si enil eht snaem tsiser evitageN over-etched under-etched Name: Fall 2008, University of California, Berkeley EE 143: Lab Quiz 1 1. Why was it important to soak the wafers in Piranha before putting th

  • 45 Pages Section 4 - Thermal Oxidation
    Section 4 - Thermal Oxidation

    School: Berkeley

    Section 4: Thermal Oxidation Jaeger Chapter 3 EE143 - Ali Javey Properties of SiO2 Thermal SiO2 is amorphous. Weight Density = 2.20 gm/cm3 Molecular Density = 2.3E22 molecules/cm3 Crystalline SiO2 [Quartz] = 2.65 gm/cm3 SiO2 <Si> (1) Excellent E

  • 6 Pages DOC_vs1
    DOC_vs1

    School: Berkeley

  • 29 Pages NMOS-process-flow
    NMOS-process-flow

    School: Berkeley

    1 NMOS Fabrication Process Description Modified by Alex Chediak on March 2000. Modified by TAs team (Eric Hobbs, Paul Hung, Paul Friedberg, Min She) in Fall semester, 2002. Part 1) A checklist: what do you need in EE143 lab and microlab? At the beg

  • 4 Pages hw 1 solutions
    Hw 1 Solutions

    School: Berkeley

    Course: Microfabrication Technology

  • 5 Pages hw 2 solutions
    Hw 2 Solutions

    School: Berkeley

    Course: Microfabrication Technology

    EE 143 MICROFABRICATION TECHNOLOGY SPRING 2010 C. Nguyen PROBLEM SET #2 Solution I. Process Flow/Layout to Cross-Section 1. Consider the cross-section of a device shown below: a. What kind of device is this? A pn diode b. Generate a possible process flowc

  • 5 Pages hw 3 solutions
    Hw 3 Solutions

    School: Berkeley

    Course: Microfabrication Technology

    EE 143 MICROFABRICATION TECHNOLOGY SPRING 2010 C. Nguyen PROBLEM SET #3 Solution I. Lithography 1. Consider the overhead-view NMOS device pattern below obtained after S/D and gate lithography. Circle the misaligned areas. For each misalignment, state whet

  • 1 Page hw 4 solutions
    Hw 4 Solutions

    School: Berkeley

    Course: Microfabrication Technology

    EE 143 MICROFABRICATION TECHNOLOGY SPRING 2010 C. Nguyen PROBLEM SET #4 SOLUTION Issued: Thursday, Feb. 18, 2010 Due: Thursday, Feb. 25, 2010, 7:00 p.m. in the EE 143 homework box in 240 Cory 1. In HW#2, you created a process flow for fabricating a pn dio

  • 3 Pages hw 5 solution
    Hw 5 Solution

    School: Berkeley

    Course: Microfabrication Technology

    EE 143 MICROFABRICATION TECHNOLOGY SPRING 2010 C. Nguyen PROBLEM SET #5 SOLUTION 1. You would like to oxidize a 1-m radius cylindrical polysilicon rod as shown below via thermal oxidation at 1000C to form a 1-m-thick oxide sheath. 1 m 1 m Si SiO2 Si ? m P

  • 6 Pages hw 6 solutions
    Hw 6 Solutions

    School: Berkeley

    Course: Microfabrication Technology

    EE 143 MICROFABRICATION TECHNOLOGY SPRING 2010 C. Nguyen PROBLEM SET #6 SOLUTION 1. The cross-section below is to be etched via reactive ion etching (RIE). For this problem, assume that the RIE etch is 100% anisotropic and that it etches polysilicon at th

  • 12 Pages Midterm 1 Solutions 11
    Midterm 1 Solutions 11

    School: Berkeley

    Course: Microfabrication Technology

    EE143 Microfabrication Technology Midterm Exam 1 Name: -~- Signature: SID: _ _ CLOSED BOOK. ONE 8 112" X 11" SHEET OF NOTES, AND SCIENTIFIC POCKET CALCULATOR PERMITTED. TIME ALLOTTED: 80 MINUTES b. Why is contact printing unsuitable for high-volume manufa

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