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EE 5302 - UT Arlington Study Resources

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  • 3 Pages HW2sol
    HW2sol

    School: UT Arlington

    Course: Random Probabilities

    EE 351K Probability and Random Processes Instructor: Haris Vikalo Homework 2 Solutions FALL 2010 hvikalo@ece.utexas.edu Problem 1 Bob, Carol, Ted and Alice take turns (in that order) tossing a coin with probability of tossing a Head, P (H ) = p, where 0 <

  • 3 Pages EE5307Fall07
    EE5307Fall07

    School: UT Arlington

    Course: Linear Systems

    EE5307 EXAM I October 11, 2007 Name (Print): _ (Last) (First) I.D.: _ Solve ALL THREE problems. Time: 1 hr. 30 min. Maximum Score: 36 points. Problem 1 (a) Set up the state-variable description for the following circuit with input u, output y and state va

  • 1 Page hw4
    Hw4

    School: UT Arlington

    Course: Random Probabilities

    EE 351K Probability and Random Processes Instructor: Haris Vikalo Homework 4 FALL 2010 hvikalo@ece.utexas.edu Due on : Tuesday 09/28/10 Problem 1 There are n multiple-choice questions in an exam, each with 5 choices. The student knows the correct answer t

  • 3 Pages hw3sol
    Hw3sol

    School: UT Arlington

    Course: Random Probabilities

    EE 351K Probability and Random Processes Instructor: Haris Vikalo Homework 3 Solutions FALL 2010 hvikalo@ece.utexas.edu Problem 1 There are three dice in a bag. One has one red face, another has two red faces, and the third has three red faces. One of the

  • 11 Pages solution_2
    Solution_2

    School: UT Arlington

    Course: Semiconductor

    Score distribution of EE 5368 Midterm spring 2011 Average =59.22 Mid=58.75 Variance =l-6.05 EE 5368 Wireless Commun tcation Systems Exarn#I Spring 201 1 Student name: 5, hhvn SN #: March23,20Il The lJniversity of Texas atArlington Problem Part (I) l. (15%

  • 8 Pages Fall 2012
    Fall 2012

    School: UT Arlington

  • 2 Pages FETparameterExtraction
    FETparameterExtraction

    School: UT Arlington

    Course: ELECTRONICS I

    Problem: For the FET drain characteristics in Figure 5.11 (Page 297 of the textbook) nd Vto , and K . Solution: The drain currunt iD is given by equation 5.11 (Page 294) iD = K(vGS Vto )2 (1 + vDS ) To calculate Vto , select two points in the saturation r

  • 2 Pages MOSFET nChaneel and pChannel Enhancement
    MOSFET NChaneel And PChannel Enhancement

    School: UT Arlington

    Course: ELECTRONICS I

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