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HW2sol
School: UT Arlington
Course: Random Probabilities
EE 351K Probability and Random Processes Instructor: Haris Vikalo Homework 2 Solutions FALL 2010 hvikalo@ece.utexas.edu Problem 1 Bob, Carol, Ted and Alice take turns (in that order) tossing a coin with probability of tossing a Head, P (H ) = p, where 0 <

Hw4
School: UT Arlington
Course: Random Probabilities
EE 351K Probability and Random Processes Instructor: Haris Vikalo Homework 4 FALL 2010 hvikalo@ece.utexas.edu Due on : Tuesday 09/28/10 Problem 1 There are n multiplechoice questions in an exam, each with 5 choices. The student knows the correct answer t

EE5307Fall07
School: UT Arlington
Course: Linear Systems
EE5307 EXAM I October 11, 2007 Name (Print): _ (Last) (First) I.D.: _ Solve ALL THREE problems. Time: 1 hr. 30 min. Maximum Score: 36 points. Problem 1 (a) Set up the statevariable description for the following circuit with input u, output y and state va

Hw3sol
School: UT Arlington
Course: Random Probabilities
EE 351K Probability and Random Processes Instructor: Haris Vikalo Homework 3 Solutions FALL 2010 hvikalo@ece.utexas.edu Problem 1 There are three dice in a bag. One has one red face, another has two red faces, and the third has three red faces. One of the

Solution_2
School: UT Arlington
Course: Semiconductor
Score distribution of EE 5368 Midterm spring 2011 Average =59.22 Mid=58.75 Variance =l6.05 EE 5368 Wireless Commun tcation Systems Exarn#I Spring 201 1 Student name: 5, hhvn SN #: March23,20Il The lJniversity of Texas atArlington Problem Part (I) l. (15%

Fall 2012
School: UT Arlington

FETparameterExtraction
School: UT Arlington
Course: ELECTRONICS I
Problem: For the FET drain characteristics in Figure 5.11 (Page 297 of the textbook) nd Vto , and K . Solution: The drain currunt iD is given by equation 5.11 (Page 294) iD = K(vGS Vto )2 (1 + vDS ) To calculate Vto , select two points in the saturation r