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CSU Channel Islands | EECS 217

#### 21 sample documents related to EECS 217

• CSU Channel Islands EECS 217
EECS 277C Nanotechnology Problem Set #2 Due Friday, May 6, 2005 Calculate the change in the Gibbs free energy for a two-island circuit with no gates. (I.e. three tunnel junctions in series) for all possible electron transitions. (Left lead to island

• CSU Channel Islands EECS 217
EECS 277C Nanotechnology Problem Set #1 Due Monday, May 2, 2005 1) Using Moore\'s law, and available empirical data from Moore\'s most recent ISSCC presentation, calculate the year in which the size of a transistor will be the size of a single atom. Do

• CSU Channel Islands EECS 217
Nanotechnology Nanofabrication techniques Characterization techniques Single electron transistors Quantization of electrical resistance Molecular electronics Nanotubes, nanowires Bio-nano-electronics Last modified 3/18/2003 EECS 217C Nanotec

• CSU Channel Islands EECS 217
Quantum mechanics of free electrons Important for quantized resistance calculation Important for single electron transistors Density of states 3 dimensions 2 dimensions 1 dimensions 0 dimensions Dimensionality (effective) Set by size of nan

• CSU Channel Islands EECS 217
ECE 217C Nanotechnology Spring 2003 Textbook: Prerequisites: Outline (tentative): Code 15840 Book chapters and articles will be available in the copy center. EECS 113A and Physics 51A Week 1 Introduction to nanoscale systems. Length, energy, and t

• CSU Channel Islands EECS 217
EECS 217C Nanotechnology Homework #3 Due Wed, April 30, 2003at the beginning of class 1) How does the RT C time of a tunnel junction depend on the area of the junction? 2) Estimate the RT C time for the tunnel junction measured in class. 3) For a tun

• CSU Channel Islands EECS 217
EECS 217C Nanotechnology Homework #1 Due Monday, April 7, 2003, at the beginning of class 1) Using Moore\'s law, and available empirical data from Moore\'s most recent ISSCC presentation, calculate the year in which the size of a transistor will be the

• CSU Channel Islands EECS 217
EECS 217C Nanotechnology Homework #4 Due Friday May 30, 2003 1) What is the Fermi wavelength of electrons in aluminum? Is it possible to fabricate 1d Al wires using photolithography? Is it possible to fabricate Al wires using electron beam lithograph

• CSU Channel Islands EECS 217
EECS 217C Nanotechnology Midterm Monday, May 17, 2004 1a 1b 2 3 4 5a 5b 5c 5d 5e 6a 6b 6c Total /10 /10 /15 /10 /10 /5 /5 /5 /5 /5 /10 /5 /5 /100 1) A (10 points) What is the smallest dimension that can be lithographically fabricated? B (10 points)

• CSU Channel Islands EECS 217
EECS 277C: Nanotechnology Spring 2005 Textbook: Code 15915 Ferry and Goodnick, Transport in Nanostructures, Cambridge University Press There will also be a reading packet and the lecture notes available in the copy center at the base of Engineering

• CSU Channel Islands EECS 217
Announcements Reading list now posted online Today\'s lecture online less copyrighted figures Today\'s full lecture @ copy center Last modified 5/27/2003 EECS 217C Nanotechnology 2003 P. Burke 1 Lecture 11: Quantum dots R=? d ~ Fermi Last mod

• CSU Channel Islands EECS 217
1. Conduction in DNA (is it a wire?) 2. Nanowire lasers 3. Nanomechanical RF resonators 4. Nanoimprint lithography 5. Quantum computing - theory 6. Quantum computing - experimental realizations 7. Break junctions 8. Nanowire/Nanotube chemical sensors

• CSU Channel Islands EECS 217
1. B.J. van Wees et al. (1988), Phys. Rev. Lett., 60, 848. 2. Zhou, et al, Applied Physics Letters 67, 8 (1995) p. 1160. 3. A.F.Morpurgo, C.M.Marcus and D. B. Robinson, Controlled Fabrication of Metallic Electrodes with Atomic Separation, Appl. Phys.

• CSU Channel Islands EECS 217
Tunnel junctions I Al2 O 3 Al Al V An important circuit element in single electron transistors. Last modified 3/18/2003 EECS 217C Nanotechnology 2003 P. Burke 1 Energy Quantum tunnel probability z P~e -d d Last modified 3/18/2003 EECS 217C

• CSU Channel Islands EECS 217
EECS 217C Nanotechnology Homework #2 Due Monday, April 21, at the beginning of class 1) Calculate the density of states in a 2 dimensional world. 2) Calculate the density of states in a 1 dimensional world. 3) Calculate the probability for an electro

• CSU Channel Islands EECS 217
Lecture 13: Carbon nanotubes R=? Last modified 6/1/2003 EECS 217C Nanotechnology 2003 P. Burke 1 Ballistic vs. diffusive transport Diffusive R= L W2 W l L Ballistic R=? W l Last modified 6/1/2003 EECS 217C Nanotechnology 2003 P. Burke

• CSU Channel Islands EECS 217
Lecture 6: Single electron box g at e Al2 O 3 l ne on n tu ncti ju Al islan d Al2 O 3 Al Al V RTC CG V + Last modified 3/31/2003 EECS 217C Nanotechnology 2003 P. Burke 1 Electrostatic energy (no tunneling) Q- Q+ Q- Q+ RTC CG V Cseries

• CSU Channel Islands EECS 217
Lecture 9 2 dimensional electron gas (2DEG) Last modified 5/11/2003 EECS 217C Nanotechnology 2003 P. Burke 1 Vacuum level E0 \"electron affinity\" e = 4.07 eV in GaAs Ec EFermi E g = 1.4 eV in GaAs Ev Last modified 5/11/2003 EECS 217C Nanotechn

• CSU Channel Islands EECS 217
Lecture 10: Nanowires Al2 O 3 d ~ Fermi In semiconductors, Fermi ~ 1-10 nm What is the resistance? Last modified 5/11/2003 EECS 217C Nanotechnology 2003 P. Burke 1 1 Drift current Caused by electric field Electron density constant Analogy:

• CSU Channel Islands EECS 217
Fabrication Top down approach to nanotechnology This is overview, for more details take MAE courses by Marc Madou, Andre Shkel Thanks to Sungmu Kang for INRF images Last modified 4/1/2003 EECS 217C Nanotechnology 2003 P. Burke 1 Photomasks De

• CSU Channel Islands EECS 217
Lecture 7: Double tunnel junction t ju unn nc e tio l n Al2 O l ne on n tu ncti ju 3 \"islan d\" Al2 O 3 Al Al Al V V + C1 C2 Last modified 3/31/2003 EECS 217C Nanotechnology 2003 P. Burke 1 Electrostatic energy (no tunneling) Q+ QQ+ Q-