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ECE 440 - Solid State Electronic Devices - University Of Illinois, Urbana Champaign Study Resources
  • 3 Pages ece340Spring04HW1Sol
    Ece340Spring04HW1Sol

    School: University Of Illinois, Urbana Champaign

    Course: Ece440

    ECE 340 Homework I Due: Wednesday, January 28, 2004 (30 points total) Spring 2004 1. How many atoms are found inside a unit cell of a simple cubic (sc), body-centered cubic (bcc), facecentered cubic (fcc), diamond structure, and zinc-blende structure crys

  • 1 Page Hw4
    Hw4

    School: University Of Illinois, Urbana Champaign

    ECE 340 Homework IV Fall 2005 Due: Friday, September 16, 2005 17 3 13 3 1. A compensated germanium sample is doped with 1x10 /cm acceptors and 5x10 /cm donors. (a) What is the electron and hole concentration respectively at room temperature 15 3 13 3 unde

  • 3 Pages ece340Spring04hw7sol
    Ece340Spring04hw7sol

    School: University Of Illinois, Urbana Champaign

    Course: Ece440

    ECE 340 Homework VII Due: Monday, February 23, 2004 Spring 2004 1. In soldering wires to a sample such as that shown in Fig. 3-25, it is difficult to align the Hall probes A and B precisely. If B is displaced slightly down the length of the bar from A, an

  • 2 Pages hw6
    Hw6

    School: University Of Illinois, Urbana Champaign

    Course: Ece440

    ECE 440 Homework VI Due: Friday, October 16, 2009 Fall 2009 Please write your name and net ID on your homework. For full credit please show all work leading to your answer. Note some of the metal work functions given below may differ slightly from the tex

  • 3 Pages ece340Spring04HW11Sol
    Ece340Spring04HW11Sol

    School: University Of Illinois, Urbana Champaign

    Course: Ece440

    ECE 340 1. Homework IX Due: Friday, March 19, 2004 Spring 2004 A n+-p Si junction with a long p-region has the following properties: Na =1.5x1016/cm3; n = 1020 cm2/V-s; p = 380 cm2/V-s; n =1 s. If we apply 0.7 V forward bias to the junction at 300 K, what

  • 3 Pages ece340Spring04hw13Sol
    Ece340Spring04hw13Sol

    School: University Of Illinois, Urbana Champaign

    Course: Ece440

    ECE 340 Homework XIII Due: Wednesday, April 07, 2004 Spring 2004 1. Redraw Fig. 7-3 for an n+-p-n transistor, and explain the various components of carrier flow and current directions. 2. Sketch the energy band diagram for an n-p-n transistor in equilibri

  • 5 Pages ece340Spring04HW10Sol
    Ece340Spring04HW10Sol

    School: University Of Illinois, Urbana Champaign

    Course: Ece440

    ECE 340 1. Homework X Due: Monday, March 15, 2004 Spring 2004 When a prolonged diffusion or a high-energy implantation is conducted to form a p/n junction. The doping profile near the junction is usually graded, and the step-junction approach is no longer

  • 1 Page hw14
    Hw14

    School: University Of Illinois, Urbana Champaign

    ECE 440 Homework XIV Fall 2006 Due: Wednesday, November 15, 2006 1. For an ideal MOS structure, the SiO2 thickness is 200 , and the substrate is doped with 16 3 10 /cm acceptors. Determine the threshold voltage, VT, required to achieve strong inversion an

  • 1 Page hw13
    Hw13

    School: University Of Illinois, Urbana Champaign

    ECE 440 Homework XIII Fall 2006 Due: Friday, November 10, 2006 1. Field-effect transistors employ a mechanism different from that of BJT to control the output current by changing the charge density in the active region. The following problem is designed t

  • 1 Page hw12
    Hw12

    School: University Of Illinois, Urbana Champaign

    ECE 440 Homework XII Fall 2006 Due: Wednesday, Nov 01, 2006 + 1. Redraw Fig. 7-3 for an n -p-n transistor, and explain the various components of carrier flow and current directions. 2. Sketch the energy band diagram for an n-p-n transistor in equilibrium

  • 1 Page hw11
    Hw11

    School: University Of Illinois, Urbana Champaign

    ECE 440 Homework XI Fall 2006 Due: Wednesday, October 25, 2006 1. A Schottky barrier is formed between a metal having a work function of 4.2 eV and p-type Si (electron affinity = 4 eV). The acceptor doping in the Si is 6x1017/cm3. (a) Draw the equilibrium

  • 1 Page hw10
    Hw10

    School: University Of Illinois, Urbana Champaign

    ECE 440 Homework X Fall 2006 Due: Friday, October 20, 2006 + 17 3 1. A p -n silicon diode (Vo = 0.956 volts) has a donor doping of 10 /cm and an nregion width = 1 m. Does it break down by avalanche or punchthrough? What if the 16 3 doping is only 10 /cm ?

  • 4 Pages hw3_solutions
    Hw3_solutions

    School: University Of Illinois, Urbana Champaign

    ECE 440 Homework III Solutions Spring 2008 1. (a) It was mentioned in Section 3.2 that the covalent bonding model gives false impression of the localization of carriers. As an illustration, calculate the radius of the electron orbit around the donor in Fi

  • 1 Page hw9
    Hw9

    School: University Of Illinois, Urbana Champaign

    ECE 440 Homework IX Fall 2006 Due: Monday, October 16, 2006 1. An abrupt Si p-n junction has the following properties at 300 K: p-side -3 n-side 17 Na = 3x10 /cm 3 n = 0.1 s A = 10 cm 15 Na = 6x10 /cm 2 3 p = 10 s 2 n = 1160 cm /V-s 2 p = 420 cm /V-s p

  • 1 Page hw7
    Hw7

    School: University Of Illinois, Urbana Champaign

    ECE 440 Homework VII Fall 2006 Due: Friday, September 29, 2006 1. Consider a silicon sample at 300 K. Assume that the electron concentration varies linearly with distance. At x=0, the electron concentration is n(0). At x=10 m, the electron concentration i

  • 1 Page hw6
    Hw6

    School: University Of Illinois, Urbana Champaign

    ECE 440 Homework VI Fall 2006 Due: Monday, September 25, 2006 17 3 1. (a) Construct a semilogarithmic plot such as Fig. 4-7 for GaAs doped with 1x10 /cm 15 3 acceptors and having 2x10 EHP/cm created uniformly at t = 0. Assume that n= p =50 ns. (b) Calcula

  • 6 Pages hw6_solutions
    Hw6_solutions

    School: University Of Illinois, Urbana Champaign

    ECE 440 Homework VI Fall 2008 Due: Wednesday, October 08, 2008 1. Consider a silicon sample at 300 K. Assume that the electron concentration varies linearly with distance. At x=0, the electron concentration is n(0). At x=10 m, the electron concentration i

  • 1 Page hw5
    Hw5

    School: University Of Illinois, Urbana Champaign

    ECE 440 Homework V Fall 2006 Due: Friday, September 22, 2006 2 17 3 1. A Ge bar 1m long and 100 m in cross-sectional area is doped with 1x10 /cm gallium. Find the current at 300 K with 10 V applied assuming that the saturation thermal velocity of 7 electr

  • 1 Page hw3
    Hw3

    School: University Of Illinois, Urbana Champaign

    ECE 340 Homework III Fall 2006 Due: Monday, September 11, 2006 1. In practice we assume that the intrinsic Fermi level, Ei, coincides with the center of the band gap. In reality it is not true. Derive an expression relating the intrinsic level Ei to the c

  • 1 Page hw15
    Hw15

    School: University Of Illinois, Urbana Champaign

    ECE 440 Homework XV Fall 2006 Due: Wednesday, November 29, 2006 + 1. An n -polysilicon-gate p-channel MOS transistor is made on an n-type Si substrate with Nd = 16 3 5x10 /cm . The SiO2 thickness is 100 in the gate region, and the effective interface char

  • 1 Page hw16
    Hw16

    School: University Of Illinois, Urbana Champaign

    ECE 440 Homework XVI Fall 2006 Due: Monday, December 04, 2006 1. A lightly-doped-drain (LDD) structure is incorporated in a MOSFET. To fabricate such a structure, a heavy diffusion or implantation is first used to increase the doping in the drain region.

  • 12 Pages exam1_solutions
    Exam1_solutions

    School: University Of Illinois, Urbana Champaign

  • 10 Pages exam2_solutions
    Exam2_solutions

    School: University Of Illinois, Urbana Champaign

  • 12 Pages ECE 440 Review Problems
    ECE 440 Review Problems

    School: University Of Illinois, Urbana Champaign

    ECE 444 Fall 2005 Sakulsuk Unarunotai sunarun2@uiuc.edu ECE 440 Review Problems 5.9 18 3 15 3 An abrupt Si p-n junction has N a = 10 cm on one side and N d = 5 10 cm on the other side (a) Calculate the Fermi level positions at 300 K in the p and n regions

  • 16 Pages Final_exam_example_sp03
    Final_exam_example_sp03

    School: University Of Illinois, Urbana Champaign

    In answering the following multiple choice questions select and circle the most nearly correct answers. 1. (5 points) Consider silicon doped with 1017 cm-3 donors which are all ionized. Knowing that the electron concentration is always much greater than t

  • 12 Pages ECE%20440%20Review%20Problems
    ECE%20440%20Review%20Problems

    School: University Of Illinois, Urbana Champaign

    ECE 444 Fall 2005 Sakulsuk Unarunotai sunarun2@uiuc.edu ECE 440 Review Problems 5.9 An abrupt Si p-n junction has N a = 1018 cm 3 on one side and N d = 5 1015 cm 3 on the other side (a) Calculate the Fermi level positions at 300 K in the p and n regions.

  • 1 Page ECE 440 Review Problems
    ECE 440 Review Problems

    School: University Of Illinois, Urbana Champaign

    x e -0.002 0 0.455 0 -3.48 0 2 1 0 -0.1 0 0.1 0.2 0.3 0.4 0.5 -1 -2 -3 -4 -0.1 0 -0.02 0 -0.02 -1.00E+18 0 -1.00E+18 0 2.00E+16 0.455 2.00E+16 0.455 0.00E+00 0.5 0.00E+00 200000000000000000 0 -0.1 0 -200000000000000000 0.1 0.2 0.3 5x10 -400000000000000000

  • 7 Pages hw4_sol_09
    Hw4_sol_09

    School: University Of Illinois, Urbana Champaign

    ECE 440 Homework IV Fall 2009 Due: Friday, September 25, 2009 Print your name and netid legibly. Show all work leading to your answer clearly and neatly. Staple multiple pages. 1. A Si bar is 0.2 cm long and 200 m2 in cross-sectional area. Find the curren

  • 4 Pages hw3_solution
    Hw3_solution

    School: University Of Illinois, Urbana Champaign

    ECE 440 Homework III Fall 2008 Due: Monday, September 15, 2008 1. (a) A GaAs semiconductor crystal is doped with carbon atoms. If the carbon atoms displace arsenic atoms, does the crystal become an n-type or p-type material? Why? (b) For a nonstoichiometr

  • 10 Pages HW3_sol
    HW3_sol

    School: University Of Illinois, Urbana Champaign

    ECE 440 Homework III Fall 2009 Due: Friday, September 18, 2009 Print your name and netid legibly. Show all work leading to your answer clearly and neatly. Staple multiple pages. 1. a) Construct a semi-logarithmic plot for the following experimental result

  • 10 Pages Hw5_solution_fall09
    Hw5_solution_fall09

    School: University Of Illinois, Urbana Champaign

    ECE 440 Homework V Fall 2009 Due: Friday, October 09, 2009 Please write your name and net ID on your homework. Show all work leading to your answer. 1. The acceptor profile of a silicon sample is shown below. Assume that the majority carrier mobility can

  • 2 Pages hw17
    Hw17

    School: University Of Illinois, Urbana Champaign

    ECE 440 Homework XVII Fall 2006 Due: Friday, December 8, 2006 1. Refer to Fig. 1-13. Assuming the lattice constant varies linearly with composition x for a ternary alloy, what composition of GaSb1-xAsx is lattice-matched to InP? What composition of InxGa1

  • 1 Page hw4
    Hw4

    School: University Of Illinois, Urbana Champaign

    ECE 440 Homework IV Fall 2006 Due: Friday, September 15, 2006 17 3 13 3 1. A compensated germanium sample is doped with 1x10 /cm acceptors and 5x10 /cm donors. (a) What is the electron and hole concentration respectively at room temperature 15 3 13 3 unde

  • 1 Page hw2
    Hw2

    School: University Of Illinois, Urbana Champaign

    ECE 440 Homework II Fall 2006 Due: Wednesday, September 06, 2006 1. (a) A GaAs semiconductor crystal is doped with carbon atoms. If the carbon atoms displace arsenic atoms, does the crystal become an n-type or p-type material? Why? (b) For a nonstoichiome

  • 1 Page hw1
    Hw1

    School: University Of Illinois, Urbana Champaign

    ECE 440 Homework I Fall 2006 Due: Wednesday, August 30, 2006 1. How many atoms are found inside a unit cell of a simple cubic (sc), body-centered cubic (bcc), face-centered cubic (fcc), diamond structure, and zinc-blende structure crystal? Find the maximu

  • 12 Pages ECE440_1st HE_Sol Spr05
    ECE440_1st HE_Sol Spr05

    School: University Of Illinois, Urbana Champaign

  • 9 Pages ECE440_1st HE_Sol Fall07
    ECE440_1st HE_Sol Fall07

    School: University Of Illinois, Urbana Champaign

  • 8 Pages ECE440_1st HE Conflict_Sol Fall08
    ECE440_1st HE Conflict_Sol Fall08

    School: University Of Illinois, Urbana Champaign

  • 2 Pages ex2_example2_solution
    Ex2_example2_solution

    School: University Of Illinois, Urbana Champaign

  • 2 Pages Problem 3
    Problem 3

    School: University Of Illinois, Urbana Champaign

    Solar Cell problem A single p-n junction solar cell with the cross-sectional area of 1 cm x 1 cm is placed in a completely dark environment. The top layer of the p-n junction is a 15 m thick p-type silicon layer and the bottom layer is a 100 m thick n-typ

  • 2 Pages Problem 4
    Problem 4

    School: University Of Illinois, Urbana Champaign

    Exam 2 Question 3 Solution (DW) a 18 3 d 15 3 An abrupt p+n junction has N =2x10 cm- , N =5x10 cm- and T=300K. a) (4pts) The pn-junction is reverse biased with V=-5V. What are the excess hole and electron concentrations at the edges of the transition regi

  • 2 Pages ex2_example1_solution
    Ex2_example1_solution

    School: University Of Illinois, Urbana Champaign

    1. The room temperature I-V characteristic of a silicon np junction under reverse bias is shown below. The doping density for the P-side (NA) is 4 times that in the N-side (NA = 4ND). Relevant data is given below: Ln L p L 1 m ; Dn D p D 40 cm 2 ; n i 101

  • 1 Page Problem 1 and 2
    Problem 1 And 2

    School: University Of Illinois, Urbana Champaign

    ECE 340 Exam 2 Problem 1 - 2 Solution 1. The band diagram of a silicon N-P+ junction at T = 300K is shown below. Assume the intrinsic level is just in the middle of the band gap Ei = Eg /2 and ECn Fn = 0.18eV (a) Calculate the dopant concentration on the

  • 11 Pages Example Final Exam
    Example Final Exam

    School: University Of Illinois, Urbana Champaign

    1) MOS CAPACITOR (20 points) A high-frequency capacitance voltage measurement of a silicon MOS structure was fitted by the following expression, where VG is the gate voltage in units of Volts: C(VG) = 6 pF +12 pF/(1 + exp(VG) The area of the capacitor is

  • 9 Pages quiz3
    Quiz3

    School: University Of Illinois, Urbana Champaign

  • 1 Page Quiz1D_solution
    Quiz1D_solution

    School: University Of Illinois, Urbana Champaign

  • 8 Pages Problem 1 and 3
    Problem 1 And 3

    School: University Of Illinois, Urbana Champaign

    ECE 340 February 28, 2012 First Hour Exam Name:_Section_ Useful Formulas and Data: Problem1 A semiconductor has a non-uniform doping profile that results in the band diagram shown in the figure below. At T=300K the energy gap is EG=42kBT, and the intrinsi

  • 27 Pages NarrowBaseBJT
    NarrowBaseBJT

    School: University Of Illinois, Urbana Champaign

    N arrow-BaseD iode A n arrow-base *-n d iode i s s ketched elow a long w ith t he e quilibrium b and p b diagram.D iffusion o f m inority h oles w ithin t he n -regionw ill b e c haracterizedvery simply t hroughu se o f a ' straight-line' a pproximation.

  • 2 Pages Problem 2
    Problem 2

    School: University Of Illinois, Urbana Champaign

  • 6 Pages hw14_solutions
    Hw14_solutions

    School: University Of Illinois, Urbana Champaign

    ECE 440 Homework XIV Solutions Fall 2005 Due: Wednesday, November 16, 2005 1. For an ideal MOS structure, the SiO2 thickness is 150 , and the substrate is doped with 16 3 10 /cm acceptors. Determine the threshold voltage, VT, required to achieve strong in

  • 6 Pages hw7_solutions
    Hw7_solutions

    School: University Of Illinois, Urbana Champaign

  • 7 Pages hw8_solutions
    Hw8_solutions

    School: University Of Illinois, Urbana Champaign

    ECE 440 Homework VIII Fall 2005 Due: Monday, October 10, 2005 16 3 17 3 1. An abrupt Si p-n junction has Na = 7x10 /cm on the p-side and Nd = 2x10 /cm on the nside. (a) Calculate the Fermi level positions at 300 K in the p and n regions. P region: 7 1016

  • 6 Pages hw9_solutions
    Hw9_solutions

    School: University Of Illinois, Urbana Champaign

    ECE 440 Homework IX Solutions Fall 2005 Due: Monday, October 17, 2005 1. An abrupt Si p-n junction has the following properties at 300 K: -3 n-side p-side 17 3 2 A = 10 cm 15 3 Na = 2x10 /cm Nd = 4x10 /cm n = 0.1 s p = 10 s 2 n = 1200 cm /V-s 2 p = 420

  • 7 Pages hw6_solutions
    Hw6_solutions

    School: University Of Illinois, Urbana Champaign

    17 - p(t) = p + p0 [cm 3] 1.02 Carrier Concentrations x 10 1.015 1.01 1.005 1 0 50 100 150 200 250 300 0 50 100 150 t [ns] 200 250 300 16 - log( n(t) = n + n0 ) [cm 3] 10 15 10 14 10 13 10 12 10

  • 4 Pages hw4_solutions
    Hw4_solutions

    School: University Of Illinois, Urbana Champaign

  • 4 Pages hw5_solutions
    Hw5_solutions

    School: University Of Illinois, Urbana Champaign

  • 7 Pages ECE440fa05_HW1_sol
    ECE440fa05_HW1_sol

    School: University Of Illinois, Urbana Champaign

  • 5 Pages hw3_solutions
    Hw3_solutions

    School: University Of Illinois, Urbana Champaign

  • 4 Pages hw2_solutions
    Hw2_solutions

    School: University Of Illinois, Urbana Champaign

  • 9 Pages ECE440_1st HE_Sol Spr07
    ECE440_1st HE_Sol Spr07

    School: University Of Illinois, Urbana Champaign

  • 10 Pages quiz2
    Quiz2

    School: University Of Illinois, Urbana Champaign

  • 13 Pages hw11_solutions
    Hw11_solutions

    School: University Of Illinois, Urbana Champaign

    ECE 440 1. Homework XI Summer 2006 (a) Find the voltage VFB required to reduce to zero the negative charge induced at the semiconductor surface by a sheet of positive charge Qox located x below the metal. (b) In the case of an arbitrary distribution of ch

  • 6 Pages hw4_solutions
    Hw4_solutions

    School: University Of Illinois, Urbana Champaign

    ECE 440 Homework IV 10 3 Summer 2006 15 3 1. A direct semiconductor with n i = 10 /cm is doped with 10 /cm donors. Its low-level carrier -7 lifetime n = p = 10 sec. (a) If a sample of this material is uniformly exposed to a steady optical generation rate

  • 1 Page hw5
    Hw5

    School: University Of Illinois, Urbana Champaign

    ECE 440 Homework V Summer 2006 Due: Thursday, June 29, 2006 14 1. A 1-cm long Ge bar has a linear acceptor distribution NA = 10 3 (1 +ax) /cm , where a = 10/mm. (a) Plot the hole carrier distribution at equilibrium at 300 K from x=0 to 1 cm. (b) Estimate

  • 3 Pages hw3_solutions
    Hw3_solutions

    School: University Of Illinois, Urbana Champaign

    ECE 440 Homework III Summer 2006 1. Calculate both the electron and hole concentrations for a germanium sample doped with 16 3 1x10 arsenic atoms/cm Doping germanium with arsenic will make the sample n-type. Thus, ND = 1x1016 cm-3. To find the concentrati

  • 4 Pages hw1_solution
    Hw1_solution

    School: University Of Illinois, Urbana Champaign

    ECE 440 Homework I Solutions Summer 2006 1. Assuming that the lattice constant varies linearly with the composition, determine the unit cell side length for a silicon-germanium alloy (in diamond structure) which has an atomic 22 3 density of 4.5x10 atoms/

  • 1 Page hw3
    Hw3

    School: University Of Illinois, Urbana Champaign

    ECE440 HomeworkIII Summer2006 Due:Thursday,June22,2006 1. Calculateboththeelectronandholeconcentrationsforagermaniumsampledopedwith 16 3 1x10 arsenicatoms/cm (a)atroomtemperature(b)at450K. 14 3 13 3 2. Agermaniumsampleisdopedwith1x10 /cm acceptorsand6x10

  • 5 Pages hw2_solutions
    Hw2_solutions

    School: University Of Illinois, Urbana Champaign

    ECE 440 Homework II Summer 2006 1. An InP semiconductor crystal is doped with tin atoms. If the tin displaces phosphorous atoms, does the crystal become an n-type or p-type material? Why? InP is a III V compound semiconductor. Tin (Sn) is a column IV elem

  • 1 Page hw2
    Hw2

    School: University Of Illinois, Urbana Champaign

    ECE440 HomeworkII Summer2006 Due:Tuesday,June20,2006 1. AnInPsemiconductorcrystalisdopedwithtinatoms.Ifthetindisplacesphosphorous atoms,doesthecrystalbecomeanntypeorptypematerial?Why? 2. CalculateandexplicitlyplottheFermifunctionversusenergyfromE=EF0.20eV

  • 1 Page hw1
    Hw1

    School: University Of Illinois, Urbana Champaign

    ECE440 HomeworkI Summer2006 Due:Thursday,June15,2006 1. Assumingthatthelatticeconstantvarieslinearlywiththecomposition,determinetheunit cellsidelengthforasilicongermaniumalloy(indiamondstructure)whichhasanatomic 22 3 densityof4.5x10 atoms/cm .Also,findthe

  • 5 Pages hw13_solutions
    Hw13_solutions

    School: University Of Illinois, Urbana Champaign

    ECE 440 Homework XIII Fall 2008 Due: Monday, Dec. 08, 2008 1. Other than aluminum, polysilicon is another common gate metal for the MOS structure in silicon. By incorporating heavy doping during chemical vapor deposition of polysilicon one can greatly inc

  • 1 Page hw13
    Hw13

    School: University Of Illinois, Urbana Champaign

    ECE 440 Homework XIII Fall 2008 Due: Monday, Dec. 08, 2008 1. Other than aluminum, polysilicon is another common gate metal for the MOS structure in silicon. By incorporating heavy doping during chemical vapor deposition of polysilicon one can greatly inc

  • 4 Pages hw12_solutions
    Hw12_solutions

    School: University Of Illinois, Urbana Champaign

    ECE 440 Homework XII Fall 2008 Due: Monday, December 01, 2008 1. Field-effect transistors employ a mechanism different from that of BJT to control the output current by changing the charge density in the active region. The following problem is designed to

  • 1 Page hw4
    Hw4

    School: University Of Illinois, Urbana Champaign

    ECE440 HomeworkIV Summer2006 Due:Tuesday,June27,2006 10 3 15 3 1. Adirectsemiconductorwithni=10 /cm isdopedwith10 /cm donors.Itslowlevelcarrier 7 lifetimen=p=10 sec.(a)Ifasampleofthismaterialisuniformlyexposedtoasteadyoptical 22 3 generationrateofgop=2x10

  • 1 Page hw6
    Hw6

    School: University Of Illinois, Urbana Champaign

    ECE 440 Homework VI Summer 2006 Due: Thursday, July 06, 2006 17 3 15 3 1. An abrupt Si p-n junction has NA = 3 x 10 /cm on the p-side and ND = 2x10 /cm on the n-side. (a) Calculate the Fermi level positions in the p and n regions at 300 K. (b) Draw an equ

  • 6 Pages hw10_solutions
    Hw10_solutions

    School: University Of Illinois, Urbana Champaign

    ECE 440 Homework X Solutions Summer 2006 1. Redraw Fig. 6-12 for the p-channel (n-type substrate) case. Also include schematic drawings showing the electric circuit and contact configurations. 1 15 3 2. An ideal MOS capacitor which is made on an n-type Si

  • 1 Page hw11
    Hw11

    School: University Of Illinois, Urbana Champaign

    ECE 440 1. Homework XI Summer 2006 Due: Tuesday, August 01, 2006 (a) Find the voltage VFB required to reduce to zero the negative charge induced at the semiconductor surface by a sheet of positive charge Qox located x below the metal. (b) In the case of a

  • 5 Pages hw9_solutions
    Hw9_solutions

    School: University Of Illinois, Urbana Champaign

    ECE 440 Homework IX Due: Thursday, July 20, 2006 Summer 2006 + 1. Assume that a p -n diode is built with an n region width l smaller than a hole diffusion length ( l < Lp). This is the so-called narrow base diode. Since for this case holes are injected in

  • 2 Pages hw9
    Hw9

    School: University Of Illinois, Urbana Champaign

    ECE 440 Homework IX Due: Thursday, July 20, 2006 Summer 2006 + 1. Assume that a p -n diode is built with an n region width l smaller than a hole diffusion length ( l < Lp). This is the so-called narrow base diode. Since for this case holes are injected in

  • 7 Pages hw5_solutions
    Hw5_solutions

    School: University Of Illinois, Urbana Champaign

    ECE440 HomeworkV Summer2006 14 3 1. A1cmlongGebarhasalinearacceptordistributionNA=10 (1+ax)/cm ,wherea= 10/mm. (a)Plottheholecarrierdistributionatequilibriumat300Kfromx=0to1cm. Theapproximation p0 N A isvalidif N A n i .Sincetheminimumvalueofthevariable d

  • 5 Pages hw8_solutions
    Hw8_solutions

    School: University Of Illinois, Urbana Champaign

    ECE 440 Homework VIII Solutions + Summer 2006 17 3 1. A p -n silicon diode (Vo = 0.956 volts) has a donor doping of 2x10 /cm and nregion width = 1 m. Does it break down by avalanche or punchthrough? What if the 16 3 doping is only 1.5x10 /cm ? Refer to Fi

  • 1 Page hw10
    Hw10

    School: University Of Illinois, Urbana Champaign

    ECE 440 Homework X Summer 2006 Due: Thursday, July 27, 2006 1. Redraw Fig. 6-12 for the p-channel (n-type substrate) case. Also include schematic drawings showing the electric circuit and contact configurations. 15 3 2. An ideal MOS capacitor which is mad

  • 11 Pages exam1
    Exam1

    School: University Of Illinois, Urbana Champaign

  • 1 Page hw8
    Hw8

    School: University Of Illinois, Urbana Champaign

    ECE 440 Homework VIII Due: Monday, July 17, 2006 + Summer 2006 17 3 1. A p -n silicon diode (Vo = 0.956 volts) has a donor doping of 2x10 /cm and nregion width = 1 m. Does it break down by avalanche or punchthrough? What if the 16 3 doping is only 1.5x10

  • 6 Pages hw6_solutions
    Hw6_solutions

    School: University Of Illinois, Urbana Champaign

    ECE 440 Homework VI 17 Summer 2006 3 15 3 1. An abrupt Si p-n junction has NA = 3 x 10 /cm on the p-side and ND = 2x10 /cm on the n-side. (a) Calculate the Fermi level positions in the p and n regions at 300 K. P region: (1) Ei E f = 3 1017 kT p ln = .0

  • 7 Pages hw7_solutions
    Hw7_solutions

    School: University Of Illinois, Urbana Champaign

    ECE 440 Homework VII 17 3 Summer 2006 15 3 1. A Si step junction has NA = 10 /cm , ND = 8 x 10 /cm and a cross-sectional area -4 2 -8 -7 of 10 cm . Assume that minority carrier life times n = 10 sec and p = 10 sec. The diode is forward biased at V = (2/3)

  • 1 Page hw7
    Hw7

    School: University Of Illinois, Urbana Champaign

    ECE 440 Homework VII Due: Wednesday, July 12, 2006 17 3 15 Summer 2006 3 1. A Si step junction has NA = 10 /cm , ND = 8 x 10 /cm and a cross-sectional area -4 2 -8 -7 of 10 cm . Assume that minority carrier life times n = 10 sec and p = 10 sec. The diode

  • 8 Pages hw11_solutions
    Hw11_solutions

    School: University Of Illinois, Urbana Champaign

    ECE 440 Homework XI Fall 2008 Due: Monday, Nov. 17, 2008 1. Redraw Fig. 7-3 for an n+-p-n transistor, and explain the various components of carrier flow and current directions. 2. Sketch the energy band diagram for an n-p-n transistor in equilibrium (all

  • 1 Page hw11
    Hw11

    School: University Of Illinois, Urbana Champaign

    ECE 440 Homework XI Fall 2008 Due: Monday, Nov. 17, 2008 1. Redraw Fig. 7-3 for an n+-p-n transistor, and explain the various components of carrier flow and current directions. 2. Sketch the energy band diagram for an n-p-n transistor in equilibrium (all

  • 4 Pages hw3_solutions
    Hw3_solutions

    School: University Of Illinois, Urbana Champaign

    ECE 440 Homework III Fall 2008 Due: Monday, September 15, 2008 1. (a) A GaAs semiconductor crystal is doped with carbon atoms. If the carbon atoms displace arsenic atoms, does the crystal become an n-type or p-type material? Why? (b) For a nonstoichiometr

  • 1 Page hw4
    Hw4

    School: University Of Illinois, Urbana Champaign

    ECE 440 Homework IV Fall 2008 Due: Monday, September 22, 2008 1. In practice we assume that the intrinsic Fermi level, Ei, coincides with the center of the band gap. In reality it is not true. Derive an expression relating the intrinsic level Ei to the ce

  • 1 Page hw2_solutions
    Hw2_solutions

    School: University Of Illinois, Urbana Champaign

    ECE 440 Homework II Fall 2008 Due: Monday, September 08, 2008 1. Gold, one of the best conductors, has a face-centered cubic lattice. The lattice constant is 4.08. The force holding the lattice together is the metallic bonding, i.e. an interaction between

  • 1 Page hw3
    Hw3

    School: University Of Illinois, Urbana Champaign

    ECE 440 Homework III Fall 2008 Due: Monday, September 15, 2008 1. (a) A GaAs semiconductor crystal is doped with carbon atoms. If the carbon atoms displace arsenic atoms, does the crystal become an n-type or p-type material? Why? (b) For a nonstoichiometr

  • 1 Page hw2
    Hw2

    School: University Of Illinois, Urbana Champaign

    ECE 440 Homework II Fall 2008 Due: Monday, September 08, 2008 1. Gold, one of the best conductors, has a face-centered cubic lattice. The lattice constant is 4.08. The force holding the lattice together is the metallic bonding, i.e. an interaction between

  • 4 Pages hw1_solutions
    Hw1_solutions

    School: University Of Illinois, Urbana Champaign

    ECE 440 Homework I Solutions Fall2008 1. How many atoms are found inside a unit cell of a simple cubic (sc), body-centered cubic (bcc), face-centered cubic (fcc), diamond structure, and zinc-blende structure crystal? Find the maximum fractions of the unit

  • 1 Page hw1
    Hw1

    School: University Of Illinois, Urbana Champaign

    ECE 440 Homework I Fall 2008 Due: Wednesday, September 03, 2008 1. How many atoms are found inside a unit cell of a simple cubic (sc), body-centered cubic (bcc), face-centered cubic (fcc), diamond structure, and zinc-blende structure crystal? Find the max

  • 1 Page formula
    Formula

    School: University Of Illinois, Urbana Champaign

  • 1 Page _hw9
    _hw9

    School: University Of Illinois, Urbana Champaign

    #Mac OS X # #2#ATTR;#x# # # # # # # # # # # #

  • 1 Page _hw8
    _hw8

    School: University Of Illinois, Urbana Champaign

    #Mac OS X # #2#ATTR;#x# # # # # # # # # # # #

  • 9 Pages hw7_solutions
    Hw7_solutions

    School: University Of Illinois, Urbana Champaign

    ECE 440 Homework VII Fall 2008 Due: Monday, October 20, 2008 1. An abrupt Si p-n junction has Na = 6x1016/cm3 on the p-side and Nd = 2x1017/cm3 on the nside. (a) Calculate the Fermi level positions at 300 K in the p and n regions. P region: (1) Ei Ef = kT

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