Online study resources available anywhere, at any time
High-quality Study Documents, expert Tutors and Flashcards
Everything you need to learn more effectively and succeed
We are not endorsed by this school |
We are sorry, there are no listings for the current search parameters.
School: Iowa State
Homework 3 On-campus students: Due by 10:40 AM on Monday, Oct. 3rd, 2011 Off-campus students: Due by 11:55 PM on Monday, Oct. 10th, 2011 (As usual, the problems labeled SS are for self-study and should not be submitted for grading.) B INOMIAL , G EOMETR
School: Iowa State
Suneil Hosmane ECE 440 Spring 05 HW 15 1. Aluminum and polysilicon are commonly used as gate metals for the MOS structure in silicon. Assume that platinum is used as the gate metal. Reconstruct a diagram similar to Figure 6-17 showing the variation of the
School: Iowa State
ECE 440 Homework XIII Summer 2005 (Solution to be posted after August 02) 1. A symmetric p-n junction of area 4cm x 4cm has rectifying I-V characteristics such that I=Ith[exp(qV/kT) 1], where Ith = 10 nA. Assume that the minority carrier diffusion lengths
School: Iowa State
ECE 440 Homework I Fall 2004 Due: Wednesday, September 01, 2004 1. How many atoms are found inside a unit cell of a simple cubic (sc), body-centered cubic (bcc), face-centered cubic (fcc), diamond structure, and zinc-blende structure crystal? Find the max
School: Iowa State
ECE 440 Homework II Fall 2004 Due: Wednesday, September 08, 2004 1. (a) An InP semiconductor crystal is doped with tin atoms. If the tin atoms displace indium atoms, does the crystal become an n-type or p-type material? Why? (b) For a nonstoichiometric Ga
School: Iowa State
ECE 340 Homework III Fall 2004 Due: Wednesday, September 15, 2004 1. In practice we assume that the intrinsic Fermi level, Ei, coincides with the center of the band gap. In reality it is not true. Derive an expression relating the intrinsic level Ei to th
School: Iowa State
School: Iowa State
List of potentially useful facts [V,D]=eig([25 22; -9.4 -9.4]) V = 0.94 -0.64 -0.33 0.77 D = 17.2 0 0 -1.64 [V,D]=eig([25 -4; -4 22]) V = -0.57 -0.82 -0.82 0.57 D = 19.2 0 0 27.8 [V,D]=eig([25 -9.4; -9.4 22]) V = -0.65 -0.76 -0.76 0.64 D = 14.0 0 0 33.0 [
School: Iowa State
School: Iowa State
School: Iowa State
EEL 5544 Midterm Examination Number 2 December 1, 2010 The time for this test is 2 hours. This is a closed book test, but you are allowed two formula sheets. The formula sheets cannot contain any examples. You should write your name on the formula sheets
School: Iowa State
EEL 5544 Midterm Examination Number 2 December 1, 2010 The time for this test is 2 hours. This is a closed book test, but you are allowed two formula sheets. The formula sheets cannot contain any examples. You should write your name on the formula sheets
School: Iowa State
Homework 3 On-campus students: Due by 10:40 AM on Monday, Oct. 3rd, 2011 Off-campus students: Due by 11:55 PM on Monday, Oct. 10th, 2011 (As usual, the problems labeled SS are for self-study and should not be submitted for grading.) B INOMIAL , G EOMETR
School: Iowa State
ECE 440 Homework XI Spring 2009 Due on Wednesday, April 22, 2009 1. 2. Assume that a p-n-p transistor is doped such that the emitter doping is 10 times that in the base, the minority carrier mobility in the emitter is one-half that in the base, and the ba
School: Iowa State
ECE 440 Homework X Spring 2009 Due on Wednesday April 15, 2009 1. Assume that a p+ -n diode with a uniform cross section area, A, is built with an n region width l smaller than a hole diffusion length ( l < Lp). This is the so-called narrow base diode. Si
School: Iowa State
ECE 440 Homework X Spring 2009 Due on Wednesday April 15, 2009 1. Assume that a p+ -n diode with a uniform cross section area, A, is built with an n region width l smaller than a hole diffusion length ( l < Lp). This is the so-called narrow base diode. Si
School: Iowa State
ECE 440 Homework X Spring 2009 Due on Wednesday April 15, 2009 1. Assume that a p+ -n diode with a uniform cross section area, A, is built with an n region width l smaller than a hole diffusion length ( l < Lp). This is the so-called narrow base diode. Si
School: Iowa State
sherECE 440 Homework IX Spring 2009 Due on Wednesday April 08, 2009 1. A newly fabricated silicon p-n junction in the ECE440 lab is to be characterized under forward biasing. The uncompensated doping concentrations in the p and n side are NA=4x1017/cm3 an
School: Iowa State
1 Spring 2009 ELECTRICAL AND COMPUTER ENGINEERING 440 Solid State Electronic Devices The course director is Prof. K.C. Hsieh The course structure consists of three lecture/discussion meetings per week. Final course grades are based on the distribution of
School: Iowa State
EEL 5544 - Noise in Linear Systems (Should be called Probability and Random Processes for Electrical Engineers) July 15, 2011 S YLLABUS 1. Catalog Description: (3 credits) Passage of electrical noise and signals through linear systems. Statistical represe
School: Iowa State
Homework 3 On-campus students: Due by 10:40 AM on Monday, Oct. 3rd, 2011 Off-campus students: Due by 11:55 PM on Monday, Oct. 10th, 2011 (As usual, the problems labeled SS are for self-study and should not be submitted for grading.) B INOMIAL , G EOMETR
School: Iowa State
Suneil Hosmane ECE 440 Spring 05 HW 15 1. Aluminum and polysilicon are commonly used as gate metals for the MOS structure in silicon. Assume that platinum is used as the gate metal. Reconstruct a diagram similar to Figure 6-17 showing the variation of the
School: Iowa State
ECE 440 Homework XIII Summer 2005 (Solution to be posted after August 02) 1. A symmetric p-n junction of area 4cm x 4cm has rectifying I-V characteristics such that I=Ith[exp(qV/kT) 1], where Ith = 10 nA. Assume that the minority carrier diffusion lengths
School: Iowa State
ECE 440 Homework I Fall 2004 Due: Wednesday, September 01, 2004 1. How many atoms are found inside a unit cell of a simple cubic (sc), body-centered cubic (bcc), face-centered cubic (fcc), diamond structure, and zinc-blende structure crystal? Find the max
School: Iowa State
ECE 440 Homework II Fall 2004 Due: Wednesday, September 08, 2004 1. (a) An InP semiconductor crystal is doped with tin atoms. If the tin atoms displace indium atoms, does the crystal become an n-type or p-type material? Why? (b) For a nonstoichiometric Ga
School: Iowa State
ECE 340 Homework III Fall 2004 Due: Wednesday, September 15, 2004 1. In practice we assume that the intrinsic Fermi level, Ei, coincides with the center of the band gap. In reality it is not true. Derive an expression relating the intrinsic level Ei to th
School: Iowa State
ECE 340 Homework IV Fall 2004 Due: Friday, September 17, 2004 17 3 13 3 1. A compensated germanium sample is doped with 1x10 /cm acceptors and 5x10 /cm donors. (a) What is the electron and hole concentration respectively at room temperature 15 3 13 3 unde
School: Iowa State
ECE 340 Homework V Fall 2004 Due: Wednesday, September 22, 2004 2 17 3 1. A Ge bar 0.1 cm long and 100 m in cross-sectional area is doped with 1x10 /cm gallium. Find the current at 300 K with 10 V applied. Repeat for a Ge bar 1 m long assuming that 7 the
School: Iowa State
ECE 340 Homework VI Fall 2004 Due: Monday, September 27, 2004 17 3 1. (a) Construct a semilogarithmic plot such as Fig. 4-7 for GaAs doped with 1x10 /cm 15 3 acceptors and having 2x10 EHP/cm created uniformly at t = 0. Assume that n= p =50 ns. (b) Calcula
School: Iowa State
ECE 340 Homework VII Fall 2004 Due: Friday, October 01, 2004 1. Consider a silicon sample at 300 K. Assume that the electron concentration varies linearly with distance. At x=0, the electron concentration is n(0). At x=10 m, the electron concentration is
School: Iowa State
ECE 440 Homework VIII Fall 2004 Due: Monday, October 11, 2004 16 3 17 3 1. An abrupt Si p-n junction has Na = 7x10 /cm on the p-side and Nd = 2x10 /cm on the nside. (a) Calculate the Fermi level positions at 300 K in the p and n regions. (b) Draw an equil
School: Iowa State
ECE 440 Homework IX Fall 2004 Due: Monday, October 18, 2004 1. An abrupt Si p-n junction has the following properties at 300 K: p-side -3 n-side 17 3 Na = 2x10 /cm n = 0.1 s 2 p = 190 cm /V-s 2 n = 600 cm /V-s 2 A = 10 cm 15 3 Na = 4x10 /cm p = 10 s 2
School: Iowa State
ECE 440 Homework X Fall 2004 Due: Friday, October 22, 2004 + 1. A p -n silicon diode (Vo = 0.956 volts) has a donor doping of 1017/cm3 and an nregion width = 1 m. Does it break down by avalanche or punchthrough? What if the 16 3 doping is only 10 /cm ? Re
School: Iowa State
ECE 440 Homework XI Fall 2004 Due: Wednesday, October 27, 2004 1. A Schottky barrier is formed between a metal having a work function of 4.2 eV and p-type Si (electron affinity = 4 eV). The acceptor doping in the Si is 5x1017/cm3. (a) Draw the equilibrium
School: Iowa State
ECE 440 Homework XII Summer 2005 Due: Tuesday, August 02, 2005 + 1. An n poly-gate n-channel MOS transistor is made on a p-type Si substrate with Na = 17 3 2x10 /cm . The SiO2 thickness is 100 in the gate region, and the effective interface charge 10 2 Qi
School: Iowa State
ECE 440 Homework XI Due: Thursday, July 28, 2005 Summer 2005 1. Redraw Fig. 6-12 for the p-channel (n-type substrate) case. Also include schematic drawings showing the electric circuit and contact configurations. 15 3 2. An ideal MOS capacitor which is ma
School: Iowa State
ECE 440 Homework X Due: Thursday, July 21, 2005 Summer 2005 1. Calculate and plot the normalized excess hole distribution p(xn)/pE as a function of normalized distance xn /Wb across the neutral base region of a p-n-p transistor from Eq. 7-14, for both Wb/
School: Iowa State
Suneil Hosmane ECE 440 Spring 05 HW 16 1. For an n-channel Si MOSFET with an oxide thickness d=150 , a channel mobility n = 1000 cm2 /V-s, Z=100 m, and L=5 m, determine the threshold voltages for Na = 1015 and 1017/cm3, respectively. Calculate and tabulat
School: Iowa State
Suneil Hosmane ECE 440 Spring 05 HW 17 1. An n-channel enhancement MOSFET with VT=2 V and (ZC n/L)=0.5 mA/V2 is to be i operated in the saturation region with ID=10 mA. What is the lowest permissible VDS and what is the gate bias? This problem is extremel
School: Iowa State
Suneil Hosmane ECE 440 Spring 05 HW 18 1. Refer to Fig. 1-13. Assuming the lattice constant varies linearly with composition x for a ternary alloy, what composition of InxGa1-xP is lattice-matched to GaAs? What is the bandgap energy of the InxGa1-xP layer
School: Iowa State
School: Iowa State
School: Iowa State
ECE 440 Homework III Summer 2005 Due: Thursday, June 23, 2005 1. Calculate the value of the effective density of states in the conduction band for both silicon and germanium at room temperature (300 K). The effective mass values are mn* = 0.55 mo for Ge a
School: Iowa State
ECE 440 Homework IV Summer 2005 Due: Tuesday, June 28, 2005 1. The following experimental data were obtained from performing Hall measurement on a silicon bar: L = 1.5 cm, t = 500 m, Ix = 1 mA, w = 0.4 cm and the magnetic field is 10 kG with the sample ar
School: Iowa State
ECE 440 Homework V Summer 2005 Due: Thursday, June 30, 2005 14 1. A 1-cm long Ge bar has a linear acceptor distribution NA = 10 3 (1 +ax) /cm , where a = 20/mm and x is expressed in cm. (a) Plot the hole carrier distribution at equilibrium at 300 K from x
School: Iowa State
ECE 440 Homework VI Summer 2005 Due: Friday, July 08, 2005 17 3 15 3 1. An abrupt Si p-n junction has NA = 3 x 10 /cm on the p-side and ND = 2x10 /cm on the n-side. (a) Calculate the Fermi level positions in the p and n regions at 300 K. (b) Draw an equil
School: Iowa State
ECE 440 Homework VII Due: Tuesday, July 12, 2005 17 3 15 Summer 2005 3 -4 1. A Si step junction has NA = 10 /cm , ND = 7 x 10 /cm and a cross-sectional area of 10 2 -8 -7 cm . Assume that minority carrier life times n = 10 sec and p = 10 sec. The diode is
School: Iowa State
ECE 440 Homework VIII Due: Thursday, July 14, 2005 Summer 2005 1. Modify Eq. (5-23) for the case of reverse bias Vr > Vo. Solve for Vr in terms of the peak + electric field for a p -n junction. If avalanche occurs at a peak field of about 400 kV/cm in a S
School: Iowa State
ECE 440 Homework IX Due: Tuesday, July 19, 2005 Summer 2005 16 3 1. Assume that an ideal Schottky barrier is formed on p-type Si having Na =10 /cm . The metal work function is 4.5 eV, and the Si electron affinity is 4 eV. Draw equilibrium diagrams such as
School: Iowa State
ECE 440 Homework XII Fall 2004 Due: Monday, November 01, 2004 1. Redraw Fig. 7-3 for an n+-p-n transistor, and explain the various components of carrier flow and current directions. 2. Sketch the energy band diagram for an n-p-n transistor in equilibrium
School: Iowa State
ECE 440 Homework XIII Fall 2004 Due: Friday, November 12, 2004 1. Field-effect transistors employ a mechanism different from that of BJT to control the output current by changing the charge density in the active region. The following problem is designed t
School: Iowa State
eECE 440 Homework VI Spring 2009 Due on Wednesday, March 04, 2009 1. Consider a silicon sample at 300 K. Assume that the difference of hole concentration varies linearly with distance. At x=0, the hole concentration is p(0). At x=10 m, the hole concentrat
School: Iowa State
ECE 440 Homework VII Spring 2009 Due on Monday, March 16, 2009 1. An abrupt Si p-n junction is formed by alloying a uniformly doped n-type silicon bar of which Nd = 5x1016/cm3. During the alloying process, a uniform counter doping of acceptors of Na = 1.5
School: Iowa State
ECE 440 Homework VII Spring 2009 Due on Monday, March 16, 2009 1. An abrupt Si p-n junction is formed by alloying a uniformly doped n-type silicon bar of which Nd = 5x1016/cm3. During the alloying process, a uniform counter doping of acceptors of Na = 1.5
School: Iowa State
ECE 440 Homework VIII Spring 2009 Due on Wednesday, April 01, 2009 1. An abrupt Si p-n junction has the following properties at 300 K: p-side n-side Na = 1x1017/cm3 n = 1 s p = 220 cm2/V-s n = 700 cm2/V-s A = 10-4cm2 Nd = 1x1016/cm3 p = 10 s n = 1080 c
School: Iowa State
ECE 440 Homework VIII Spring 2009 Due on Wednesday, April 01, 2009 1. An abrupt Si p-n junction has the following properties at 300 K: p-side n-side Na = 1x1017/cm3 n = 1 s p = 220 cm2/V-s n = 700 cm2/V-s A = 10-4cm2 Nd = 1x1016/cm3 p = 10 s n = 1080 c
School: Iowa State
ECE 440 Homework IX Spring 2009 Due on Wednesday April 08, 2009 1. A newly fabricated silicon p-n junction in the ECE440 lab is to be characterized under forward biasing. The uncompensated doping concentrations in the p and n side are NA=4x1017/cm3 and ND
School: Iowa State
sherECE 440 Homework IX Spring 2009 Due on Wednesday April 08, 2009 1. A newly fabricated silicon p-n junction in the ECE440 lab is to be characterized under forward biasing. The uncompensated doping concentrations in the p and n side are NA=4x1017/cm3 an
School: Iowa State
ECE 440 Homework X Spring 2009 Due on Wednesday April 15, 2009 1. Assume that a p+ -n diode with a uniform cross section area, A, is built with an n region width l smaller than a hole diffusion length ( l < Lp). This is the so-called narrow base diode. Si
School: Iowa State
ECE 440 Homework X Spring 2009 Due on Wednesday April 15, 2009 1. Assume that a p+ -n diode with a uniform cross section area, A, is built with an n region width l smaller than a hole diffusion length ( l < Lp). This is the so-called narrow base diode. Si
School: Iowa State
ECE 440 Homework X Spring 2009 Due on Wednesday April 15, 2009 1. Assume that a p+ -n diode with a uniform cross section area, A, is built with an n region width l smaller than a hole diffusion length ( l < Lp). This is the so-called narrow base diode. Si
School: Iowa State
ECE 440 Homework XI Spring 2009 Due on Wednesday, April 22, 2009 1. 2. Assume that a p-n-p transistor is doped such that the emitter doping is 10 times that in the base, the minority carrier mobility in the emitter is one-half that in the base, and the ba
School: Iowa State
EEL 5544 - Noise in Linear Systems (Should be called Probability and Random Processes for Electrical Engineers) July 15, 2011 S YLLABUS 1. Catalog Description: (3 credits) Passage of electrical noise and signals through linear systems. Statistical represe
School: Iowa State
ECE 440 Homework VI Spring 2009 Due on Wednesday, March 04, 2009 1. Consider a silicon sample at 300 K. Assume that the difference of hole concentration varies linearly with distance. At x=0, the hole concentration is p(0). At x=10 m, the hole concentrati
School: Iowa State
ECE 440 Homework V Spring 2009 Due on Wednesday, February 25, 2009 1. (a) Construct a semi-logarithmic plot such as Fig. 4-7 for Si doped with 5x10 16/cm3 donors and having 3x1014 EHP/cm3 created uniformly at t = 0. Assume that n= p = 2 s. How much time i
School: Iowa State
ECE 440 Homework V Spring 2009 Due on Wednesday, February 25, 2009 1. (a) Construct a semi-logarithmic plot such as Fig. 4-7 for Si doped with 5x10 16/cm3 donors and having 3x1014 EHP/cm3 created uniformly at t = 0. Assume that n= p = 2 s. How much time i
School: Iowa State
ECE 440 Homework XIV Fall 2004 Due: WednesdaY, November 17, 2004 1. Other than aluminum, polysilicon is another common gate metal for the MOS structure in silicon. By incorporating heavy doping during chemical vapor deposition of polysilicon one can great
School: Iowa State
ECE 440 Homework XV Fall 2004 Due: Monday, November 29, 2004 + 1. An n -polysilicon-gate p-channel MOS transistor is made on an n-type Si substrate with Nd = 16 3 6x10 /cm . The SiO2 thickness is 100 in the gate region, and the effective interface charge
School: Iowa State
ECE 440 Homework XVI Fall 2004 Due: Friday, December 03, 2004 1. A lightly-doped-drain (LDD) structure is incorporated in a MOSFET. To fabricate such a structure, a heavy diffusion or implantation is first used to increase the doping in the drain region.
School: Iowa State
ECE 440 Homework XVII Fall 2004 Due: Wednesday, December 08, 2004 1. Refer to Fig. 1-13. Assuming the lattice constant varies linearly with composition x for a ternary alloy, what composition of GaSb1-xAsx is lattice-matched to InP? What composition of In
School: Iowa State
ECE 440 Homework I Spring 2009 Due on Wednesday, January 28, 2009 1. How many atoms are found inside a unit cell of a simple cubic (sc), body-centered cubic (bcc), face-centered cubic (fcc), diamond structure, and zinc-blende structure crystal? Find the m
School: Iowa State
ECE 440 11. Homework I Solutions Spring 2009 How many atoms are found inside a unit cell of a simple cubic (sc), body-centered cubic (bcc), face-centered cubic (fcc), diamond structure, and zinc-blende structure crystal? Find the maximum fractions of the
School: Iowa State
ECE 440 Homework II Spring 2009 Due on Wednesday, February 04, 2009 1. (a) A GaAs semiconductor crystal is doped with silicon atoms. If all silicon atoms displace Ga atoms, does the crystal become an n-type or p-type material? Why? What if 3/4 silicon ato
School: Iowa State
ECE 440 Homework II Spring 2009 Due on Wednesday, February 04, 2009 1. (a) A GaAs semiconductor crystal is doped with silicon atoms. If all silicon atoms displace Ga atoms, does the crystal become an n-type or p-type material? Why? What if 3/4 silicon ato
School: Iowa State
ECE 440 Homework III Spring 2009 Due on Wednesday, February 11, 2009 1. (a) It was mentioned in Section 3.2 that the covalent bonding model gives false impression of the localization of carriers. As an illustration, calculate the radius of the electron or
School: Iowa State
ECE 440 Homework III Spring 2009 Due on Wednesday, February 11, 2009 1. (a) It was mentioned in Section 3.2 that the covalent bonding model gives false impression of the localization of carriers. As an illustration, calculate the radius of the electron or
School: Iowa State
ECE 440 Homework IV Spring 2009 Due on Wednesday, February 18, 2009 1. A silicon sample is doped with 2x10 14 As atoms/cm3. (a) What are the electron and hole concentrations, respectively, at 500 K under equilibrium conditions? (b) Where is E F positioned
School: Iowa State
ECE 440 Homework IV Spring 2009 Due on Wednesday, February 18, 2009 1. A silicon sample is doped with 2x10 14 As atoms/cm3. (a) What are the electron and hole concentrations, respectively, at 500 K under equilibrium conditions? (b) Where is E F positioned
School: Iowa State
1 Spring 2009 ELECTRICAL AND COMPUTER ENGINEERING 440 Solid State Electronic Devices The course director is Prof. K.C. Hsieh The course structure consists of three lecture/discussion meetings per week. Final course grades are based on the distribution of
School: Iowa State
Suneil Hosmane ECE 440 Spring 05 HW 14 1. A bipolar junction transistor uses a current variation in the base region to modulate the injected emitter current leading to a variation in the collector output current. So it is a current control mechanism. Fiel
School: Iowa State
School: Iowa State
List of potentially useful facts [V,D]=eig([25 22; -9.4 -9.4]) V = 0.94 -0.64 -0.33 0.77 D = 17.2 0 0 -1.64 [V,D]=eig([25 -4; -4 22]) V = -0.57 -0.82 -0.82 0.57 D = 19.2 0 0 27.8 [V,D]=eig([25 -9.4; -9.4 22]) V = -0.65 -0.76 -0.76 0.64 D = 14.0 0 0 33.0 [
School: Iowa State
School: Iowa State
School: Iowa State
EEL 5544 Midterm Examination Number 2 December 1, 2010 The time for this test is 2 hours. This is a closed book test, but you are allowed two formula sheets. The formula sheets cannot contain any examples. You should write your name on the formula sheets
School: Iowa State
EEL 5544 Midterm Examination Number 2 December 1, 2010 The time for this test is 2 hours. This is a closed book test, but you are allowed two formula sheets. The formula sheets cannot contain any examples. You should write your name on the formula sheets
School: Iowa State
School: Iowa State
School: Iowa State
EEL 5544 Midterm Examination Number 1 September 29, 2011 The time for this test is 2 hours and 10 minutes. This is a closed book test, but you are allowed one formula sheet. The formula sheet cannot contain any examples. You should write your name on the
School: Iowa State
EEL 5544 Midterm Examination Number 1 September 29, 2011 The time for this test is 2 hours and 10 minutes. This is a closed book test, but you are allowed one formula sheet. The formula sheet cannot contain any examples. You should write your name on the
School: Iowa State
School: Iowa State
School: Iowa State
CPRE 308 Fall 2004 This quiz is worth 10 points. Quiz 3 (December 3, 2004) Name: Section: Problem 1: (2 points) Given the page reference string: 5, 3, 2, 4, 1, 3, 5, 1, 6, show the pages in the main memory right before the virtual page # 6 is ref
School: Iowa State
On-line cascading event tracking and avoidance decision support tool by Siddhartha Kumar Khaitan A dissertation submitted to the graduate faculty in partial fulfillment of the requirements for the degree of DOCTOR OF PHILOSOPHY Major: Electrical
School: Iowa State
Phased array system design by Shannon Wanner A dissertation submitted to the graduate faculty in partial fulfillment of the requirements for the degree of DOCTOR OF PHILOSOPHY Major: Electrical Engineering Program of Study Committee: Robert J. We
School: Iowa State
Homework 3 On-campus students: Due by 10:40 AM on Monday, Oct. 3rd, 2011 Off-campus students: Due by 11:55 PM on Monday, Oct. 10th, 2011 (As usual, the problems labeled SS are for self-study and should not be submitted for grading.) B INOMIAL , G EOMETR
School: Iowa State
ECE 440 Homework XI Spring 2009 Due on Wednesday, April 22, 2009 1. 2. Assume that a p-n-p transistor is doped such that the emitter doping is 10 times that in the base, the minority carrier mobility in the emitter is one-half that in the base, and the ba
School: Iowa State
ECE 440 Homework X Spring 2009 Due on Wednesday April 15, 2009 1. Assume that a p+ -n diode with a uniform cross section area, A, is built with an n region width l smaller than a hole diffusion length ( l < Lp). This is the so-called narrow base diode. Si
School: Iowa State
ECE 440 Homework X Spring 2009 Due on Wednesday April 15, 2009 1. Assume that a p+ -n diode with a uniform cross section area, A, is built with an n region width l smaller than a hole diffusion length ( l < Lp). This is the so-called narrow base diode. Si
School: Iowa State
ECE 440 Homework X Spring 2009 Due on Wednesday April 15, 2009 1. Assume that a p+ -n diode with a uniform cross section area, A, is built with an n region width l smaller than a hole diffusion length ( l < Lp). This is the so-called narrow base diode. Si
School: Iowa State
sherECE 440 Homework IX Spring 2009 Due on Wednesday April 08, 2009 1. A newly fabricated silicon p-n junction in the ECE440 lab is to be characterized under forward biasing. The uncompensated doping concentrations in the p and n side are NA=4x1017/cm3 an
School: Iowa State
ECE 440 Homework IX Spring 2009 Due on Wednesday April 08, 2009 1. A newly fabricated silicon p-n junction in the ECE440 lab is to be characterized under forward biasing. The uncompensated doping concentrations in the p and n side are NA=4x1017/cm3 and ND
School: Iowa State
ECE 440 Homework VIII Spring 2009 Due on Wednesday, April 01, 2009 1. An abrupt Si p-n junction has the following properties at 300 K: p-side n-side Na = 1x1017/cm3 n = 1 s p = 220 cm2/V-s n = 700 cm2/V-s A = 10-4cm2 Nd = 1x1016/cm3 p = 10 s n = 1080 c
School: Iowa State
ECE 440 Homework VIII Spring 2009 Due on Wednesday, April 01, 2009 1. An abrupt Si p-n junction has the following properties at 300 K: p-side n-side Na = 1x1017/cm3 n = 1 s p = 220 cm2/V-s n = 700 cm2/V-s A = 10-4cm2 Nd = 1x1016/cm3 p = 10 s n = 1080 c
School: Iowa State
ECE 440 Homework VII Spring 2009 Due on Monday, March 16, 2009 1. An abrupt Si p-n junction is formed by alloying a uniformly doped n-type silicon bar of which Nd = 5x1016/cm3. During the alloying process, a uniform counter doping of acceptors of Na = 1.5
School: Iowa State
ECE 440 Homework VII Spring 2009 Due on Monday, March 16, 2009 1. An abrupt Si p-n junction is formed by alloying a uniformly doped n-type silicon bar of which Nd = 5x1016/cm3. During the alloying process, a uniform counter doping of acceptors of Na = 1.5
School: Iowa State
eECE 440 Homework VI Spring 2009 Due on Wednesday, March 04, 2009 1. Consider a silicon sample at 300 K. Assume that the difference of hole concentration varies linearly with distance. At x=0, the hole concentration is p(0). At x=10 m, the hole concentrat
School: Iowa State
ECE 440 Homework VI Spring 2009 Due on Wednesday, March 04, 2009 1. Consider a silicon sample at 300 K. Assume that the difference of hole concentration varies linearly with distance. At x=0, the hole concentration is p(0). At x=10 m, the hole concentrati
School: Iowa State
ECE 440 Homework V Spring 2009 Due on Wednesday, February 25, 2009 1. (a) Construct a semi-logarithmic plot such as Fig. 4-7 for Si doped with 5x10 16/cm3 donors and having 3x1014 EHP/cm3 created uniformly at t = 0. Assume that n= p = 2 s. How much time i
School: Iowa State
ECE 440 Homework V Spring 2009 Due on Wednesday, February 25, 2009 1. (a) Construct a semi-logarithmic plot such as Fig. 4-7 for Si doped with 5x10 16/cm3 donors and having 3x1014 EHP/cm3 created uniformly at t = 0. Assume that n= p = 2 s. How much time i
School: Iowa State
ECE 440 Homework IV Spring 2009 Due on Wednesday, February 18, 2009 1. A silicon sample is doped with 2x10 14 As atoms/cm3. (a) What are the electron and hole concentrations, respectively, at 500 K under equilibrium conditions? (b) Where is E F positioned
School: Iowa State
ECE 440 Homework IV Spring 2009 Due on Wednesday, February 18, 2009 1. A silicon sample is doped with 2x10 14 As atoms/cm3. (a) What are the electron and hole concentrations, respectively, at 500 K under equilibrium conditions? (b) Where is E F positioned
School: Iowa State
ECE 440 Homework III Spring 2009 Due on Wednesday, February 11, 2009 1. (a) It was mentioned in Section 3.2 that the covalent bonding model gives false impression of the localization of carriers. As an illustration, calculate the radius of the electron or
School: Iowa State
ECE 440 Homework III Spring 2009 Due on Wednesday, February 11, 2009 1. (a) It was mentioned in Section 3.2 that the covalent bonding model gives false impression of the localization of carriers. As an illustration, calculate the radius of the electron or
School: Iowa State
ECE 440 Homework II Spring 2009 Due on Wednesday, February 04, 2009 1. (a) A GaAs semiconductor crystal is doped with silicon atoms. If all silicon atoms displace Ga atoms, does the crystal become an n-type or p-type material? Why? What if 3/4 silicon ato
School: Iowa State
ECE 440 Homework II Spring 2009 Due on Wednesday, February 04, 2009 1. (a) A GaAs semiconductor crystal is doped with silicon atoms. If all silicon atoms displace Ga atoms, does the crystal become an n-type or p-type material? Why? What if 3/4 silicon ato
School: Iowa State
ECE 440 11. Homework I Solutions Spring 2009 How many atoms are found inside a unit cell of a simple cubic (sc), body-centered cubic (bcc), face-centered cubic (fcc), diamond structure, and zinc-blende structure crystal? Find the maximum fractions of the
School: Iowa State
ECE 440 Homework I Spring 2009 Due on Wednesday, January 28, 2009 1. How many atoms are found inside a unit cell of a simple cubic (sc), body-centered cubic (bcc), face-centered cubic (fcc), diamond structure, and zinc-blende structure crystal? Find the m
School: Iowa State
ECE 440 Homework XVII Fall 2004 Due: Wednesday, December 08, 2004 1. Refer to Fig. 1-13. Assuming the lattice constant varies linearly with composition x for a ternary alloy, what composition of GaSb1-xAsx is lattice-matched to InP? What composition of In
School: Iowa State
ECE 440 Homework XVI Fall 2004 Due: Friday, December 03, 2004 1. A lightly-doped-drain (LDD) structure is incorporated in a MOSFET. To fabricate such a structure, a heavy diffusion or implantation is first used to increase the doping in the drain region.
School: Iowa State
ECE 440 Homework XV Fall 2004 Due: Monday, November 29, 2004 + 1. An n -polysilicon-gate p-channel MOS transistor is made on an n-type Si substrate with Nd = 16 3 6x10 /cm . The SiO2 thickness is 100 in the gate region, and the effective interface charge
School: Iowa State
ECE 440 Homework XIV Fall 2004 Due: WednesdaY, November 17, 2004 1. Other than aluminum, polysilicon is another common gate metal for the MOS structure in silicon. By incorporating heavy doping during chemical vapor deposition of polysilicon one can great
School: Iowa State
ECE 440 Homework XIII Fall 2004 Due: Friday, November 12, 2004 1. Field-effect transistors employ a mechanism different from that of BJT to control the output current by changing the charge density in the active region. The following problem is designed t
School: Iowa State
ECE 440 Homework XII Fall 2004 Due: Monday, November 01, 2004 1. Redraw Fig. 7-3 for an n+-p-n transistor, and explain the various components of carrier flow and current directions. 2. Sketch the energy band diagram for an n-p-n transistor in equilibrium
School: Iowa State
ECE 440 Homework XI Fall 2004 Due: Wednesday, October 27, 2004 1. A Schottky barrier is formed between a metal having a work function of 4.2 eV and p-type Si (electron affinity = 4 eV). The acceptor doping in the Si is 5x1017/cm3. (a) Draw the equilibrium
School: Iowa State
ECE 440 Homework X Fall 2004 Due: Friday, October 22, 2004 + 1. A p -n silicon diode (Vo = 0.956 volts) has a donor doping of 1017/cm3 and an nregion width = 1 m. Does it break down by avalanche or punchthrough? What if the 16 3 doping is only 10 /cm ? Re
School: Iowa State
ECE 440 Homework IX Fall 2004 Due: Monday, October 18, 2004 1. An abrupt Si p-n junction has the following properties at 300 K: p-side -3 n-side 17 3 Na = 2x10 /cm n = 0.1 s 2 p = 190 cm /V-s 2 n = 600 cm /V-s 2 A = 10 cm 15 3 Na = 4x10 /cm p = 10 s 2
School: Iowa State
ECE 440 Homework VIII Fall 2004 Due: Monday, October 11, 2004 16 3 17 3 1. An abrupt Si p-n junction has Na = 7x10 /cm on the p-side and Nd = 2x10 /cm on the nside. (a) Calculate the Fermi level positions at 300 K in the p and n regions. (b) Draw an equil
School: Iowa State
ECE 340 Homework VII Fall 2004 Due: Friday, October 01, 2004 1. Consider a silicon sample at 300 K. Assume that the electron concentration varies linearly with distance. At x=0, the electron concentration is n(0). At x=10 m, the electron concentration is
School: Iowa State
ECE 340 Homework VI Fall 2004 Due: Monday, September 27, 2004 17 3 1. (a) Construct a semilogarithmic plot such as Fig. 4-7 for GaAs doped with 1x10 /cm 15 3 acceptors and having 2x10 EHP/cm created uniformly at t = 0. Assume that n= p =50 ns. (b) Calcula
School: Iowa State
ECE 340 Homework V Fall 2004 Due: Wednesday, September 22, 2004 2 17 3 1. A Ge bar 0.1 cm long and 100 m in cross-sectional area is doped with 1x10 /cm gallium. Find the current at 300 K with 10 V applied. Repeat for a Ge bar 1 m long assuming that 7 the
School: Iowa State
ECE 340 Homework IV Fall 2004 Due: Friday, September 17, 2004 17 3 13 3 1. A compensated germanium sample is doped with 1x10 /cm acceptors and 5x10 /cm donors. (a) What is the electron and hole concentration respectively at room temperature 15 3 13 3 unde
School: Iowa State
ECE 340 Homework III Fall 2004 Due: Wednesday, September 15, 2004 1. In practice we assume that the intrinsic Fermi level, Ei, coincides with the center of the band gap. In reality it is not true. Derive an expression relating the intrinsic level Ei to th
School: Iowa State
ECE 440 Homework II Fall 2004 Due: Wednesday, September 08, 2004 1. (a) An InP semiconductor crystal is doped with tin atoms. If the tin atoms displace indium atoms, does the crystal become an n-type or p-type material? Why? (b) For a nonstoichiometric Ga
School: Iowa State
ECE 440 Homework I Fall 2004 Due: Wednesday, September 01, 2004 1. How many atoms are found inside a unit cell of a simple cubic (sc), body-centered cubic (bcc), face-centered cubic (fcc), diamond structure, and zinc-blende structure crystal? Find the max
School: Iowa State
ECE 440 Homework XIII Summer 2005 (Solution to be posted after August 02) 1. A symmetric p-n junction of area 4cm x 4cm has rectifying I-V characteristics such that I=Ith[exp(qV/kT) 1], where Ith = 10 nA. Assume that the minority carrier diffusion lengths
School: Iowa State
ECE 440 Homework XII Summer 2005 Due: Tuesday, August 02, 2005 + 1. An n poly-gate n-channel MOS transistor is made on a p-type Si substrate with Na = 17 3 2x10 /cm . The SiO2 thickness is 100 in the gate region, and the effective interface charge 10 2 Qi
School: Iowa State
ECE 440 Homework XI Due: Thursday, July 28, 2005 Summer 2005 1. Redraw Fig. 6-12 for the p-channel (n-type substrate) case. Also include schematic drawings showing the electric circuit and contact configurations. 15 3 2. An ideal MOS capacitor which is ma
School: Iowa State
ECE 440 Homework X Due: Thursday, July 21, 2005 Summer 2005 1. Calculate and plot the normalized excess hole distribution p(xn)/pE as a function of normalized distance xn /Wb across the neutral base region of a p-n-p transistor from Eq. 7-14, for both Wb/
School: Iowa State
ECE 440 Homework IX Due: Tuesday, July 19, 2005 Summer 2005 16 3 1. Assume that an ideal Schottky barrier is formed on p-type Si having Na =10 /cm . The metal work function is 4.5 eV, and the Si electron affinity is 4 eV. Draw equilibrium diagrams such as
School: Iowa State
ECE 440 Homework VIII Due: Thursday, July 14, 2005 Summer 2005 1. Modify Eq. (5-23) for the case of reverse bias Vr > Vo. Solve for Vr in terms of the peak + electric field for a p -n junction. If avalanche occurs at a peak field of about 400 kV/cm in a S
School: Iowa State
ECE 440 Homework VII Due: Tuesday, July 12, 2005 17 3 15 Summer 2005 3 -4 1. A Si step junction has NA = 10 /cm , ND = 7 x 10 /cm and a cross-sectional area of 10 2 -8 -7 cm . Assume that minority carrier life times n = 10 sec and p = 10 sec. The diode is
School: Iowa State
ECE 440 Homework VI Summer 2005 Due: Friday, July 08, 2005 17 3 15 3 1. An abrupt Si p-n junction has NA = 3 x 10 /cm on the p-side and ND = 2x10 /cm on the n-side. (a) Calculate the Fermi level positions in the p and n regions at 300 K. (b) Draw an equil
School: Iowa State
ECE 440 Homework V Summer 2005 Due: Thursday, June 30, 2005 14 1. A 1-cm long Ge bar has a linear acceptor distribution NA = 10 3 (1 +ax) /cm , where a = 20/mm and x is expressed in cm. (a) Plot the hole carrier distribution at equilibrium at 300 K from x
School: Iowa State
ECE 440 Homework IV Summer 2005 Due: Tuesday, June 28, 2005 1. The following experimental data were obtained from performing Hall measurement on a silicon bar: L = 1.5 cm, t = 500 m, Ix = 1 mA, w = 0.4 cm and the magnetic field is 10 kG with the sample ar
School: Iowa State
ECE 440 Homework III Summer 2005 Due: Thursday, June 23, 2005 1. Calculate the value of the effective density of states in the conduction band for both silicon and germanium at room temperature (300 K). The effective mass values are mn* = 0.55 mo for Ge a
School: Iowa State
School: Iowa State
School: Iowa State
Suneil Hosmane ECE 440 Spring 05 HW 18 1. Refer to Fig. 1-13. Assuming the lattice constant varies linearly with composition x for a ternary alloy, what composition of InxGa1-xP is lattice-matched to GaAs? What is the bandgap energy of the InxGa1-xP layer
School: Iowa State
Suneil Hosmane ECE 440 Spring 05 HW 17 1. An n-channel enhancement MOSFET with VT=2 V and (ZC n/L)=0.5 mA/V2 is to be i operated in the saturation region with ID=10 mA. What is the lowest permissible VDS and what is the gate bias? This problem is extremel
School: Iowa State
Suneil Hosmane ECE 440 Spring 05 HW 16 1. For an n-channel Si MOSFET with an oxide thickness d=150 , a channel mobility n = 1000 cm2 /V-s, Z=100 m, and L=5 m, determine the threshold voltages for Na = 1015 and 1017/cm3, respectively. Calculate and tabulat
School: Iowa State
Suneil Hosmane ECE 440 Spring 05 HW 15 1. Aluminum and polysilicon are commonly used as gate metals for the MOS structure in silicon. Assume that platinum is used as the gate metal. Reconstruct a diagram similar to Figure 6-17 showing the variation of the
School: Iowa State
Suneil Hosmane ECE 440 Spring 05 HW 14 1. A bipolar junction transistor uses a current variation in the base region to modulate the injected emitter current leading to a variation in the collector output current. So it is a current control mechanism. Fiel
School: Iowa State
Suneil Hosmane ECE 440 Spring 05 HW 13 1. Sketch the energy band diagram for an n-p-n transistor in equilibrium (all terminals grounded) and also under normal active bias (emitter junction forward biased, collector junction reverse biased). With the emitt
School: Iowa State
Suneil Hosmane ECE 440 Spring 05 HW 12 1. Assume that a p+ -n diode with a uniform cross section area, A, is built with an n region width smaller than a hole diffusion length (l < Lp). This is the socalled narrow base diode. Since for this case holes are
School: Iowa State
1 Spring 2009 ELECTRICAL AND COMPUTER ENGINEERING 440 Solid State Electronic Devices The course director is Prof. K.C. Hsieh The course structure consists of three lecture/discussion meetings per week. Final course grades are based on the distribution of
School: Iowa State
EEL 5544 - Noise in Linear Systems (Should be called Probability and Random Processes for Electrical Engineers) July 15, 2011 S YLLABUS 1. Catalog Description: (3 credits) Passage of electrical noise and signals through linear systems. Statistical represe