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School: Iowa State
Homework 3 On-campus students: Due by 10:40 AM on Monday, Oct. 3rd, 2011 Off-campus students: Due by 11:55 PM on Monday, Oct. 10th, 2011 (As usual, the problems labeled SS are for self-study and should not be submitted for grading.) B INOMIAL , G EOMETR
School: Iowa State
Suneil Hosmane ECE 440 Spring 05 HW 15 1. Aluminum and polysilicon are commonly used as gate metals for the MOS structure in silicon. Assume that platinum is used as the gate metal. Reconstruct a diagram similar to Figure 6-17 showing the variation of the
School: Iowa State
ECE 440 Homework XIII Summer 2005 (Solution to be posted after August 02) 1. A symmetric p-n junction of area 4cm x 4cm has rectifying I-V characteristics such that I=Ith[exp(qV/kT) 1], where Ith = 10 nA. Assume that the minority carrier diffusion lengths
School: Iowa State
ECE 440 Homework I Fall 2004 Due: Wednesday, September 01, 2004 1. How many atoms are found inside a unit cell of a simple cubic (sc), body-centered cubic (bcc), face-centered cubic (fcc), diamond structure, and zinc-blende structure crystal? Find the max
School: Iowa State
ECE 440 Homework II Fall 2004 Due: Wednesday, September 08, 2004 1. (a) An InP semiconductor crystal is doped with tin atoms. If the tin atoms displace indium atoms, does the crystal become an n-type or p-type material? Why? (b) For a nonstoichiometric Ga
School: Iowa State
ECE 340 Homework III Fall 2004 Due: Wednesday, September 15, 2004 1. In practice we assume that the intrinsic Fermi level, Ei, coincides with the center of the band gap. In reality it is not true. Derive an expression relating the intrinsic level Ei to th
School: Iowa State
School: Iowa State
List of potentially useful facts [V,D]=eig([25 22; -9.4 -9.4]) V = 0.94 -0.64 -0.33 0.77 D = 17.2 0 0 -1.64 [V,D]=eig([25 -4; -4 22]) V = -0.57 -0.82 -0.82 0.57 D = 19.2 0 0 27.8 [V,D]=eig([25 -9.4; -9.4 22]) V = -0.65 -0.76 -0.76 0.64 D = 14.0 0 0 33.0 [
School: Iowa State
School: Iowa State
School: Iowa State
EEL 5544 Midterm Examination Number 2 December 1, 2010 The time for this test is 2 hours. This is a closed book test, but you are allowed two formula sheets. The formula sheets cannot contain any examples. You should write your name on the formula sheets
School: Iowa State
EEL 5544 Midterm Examination Number 2 December 1, 2010 The time for this test is 2 hours. This is a closed book test, but you are allowed two formula sheets. The formula sheets cannot contain any examples. You should write your name on the formula sheets
School: Iowa State
Homework 3 On-campus students: Due by 10:40 AM on Monday, Oct. 3rd, 2011 Off-campus students: Due by 11:55 PM on Monday, Oct. 10th, 2011 (As usual, the problems labeled SS are for self-study and should not be submitted for grading.) B INOMIAL , G EOMETR
School: Iowa State
ECE 440 Homework XI Spring 2009 Due on Wednesday, April 22, 2009 1. 2. Assume that a p-n-p transistor is doped such that the emitter doping is 10 times that in the base, the minority carrier mobility in the emitter is one-half that in the base, and the ba
School: Iowa State
ECE 440 Homework X Spring 2009 Due on Wednesday April 15, 2009 1. Assume that a p+ -n diode with a uniform cross section area, A, is built with an n region width l smaller than a hole diffusion length ( l < Lp). This is the so-called narrow base diode. Si
School: Iowa State
ECE 440 Homework X Spring 2009 Due on Wednesday April 15, 2009 1. Assume that a p+ -n diode with a uniform cross section area, A, is built with an n region width l smaller than a hole diffusion length ( l < Lp). This is the so-called narrow base diode. Si
School: Iowa State
ECE 440 Homework X Spring 2009 Due on Wednesday April 15, 2009 1. Assume that a p+ -n diode with a uniform cross section area, A, is built with an n region width l smaller than a hole diffusion length ( l < Lp). This is the so-called narrow base diode. Si
School: Iowa State
sherECE 440 Homework IX Spring 2009 Due on Wednesday April 08, 2009 1. A newly fabricated silicon p-n junction in the ECE440 lab is to be characterized under forward biasing. The uncompensated doping concentrations in the p and n side are NA=4x1017/cm3 an
School: Iowa State
1 Spring 2009 ELECTRICAL AND COMPUTER ENGINEERING 440 Solid State Electronic Devices The course director is Prof. K.C. Hsieh The course structure consists of three lecture/discussion meetings per week. Final course grades are based on the distribution of
School: Iowa State
EEL 5544 - Noise in Linear Systems (Should be called Probability and Random Processes for Electrical Engineers) July 15, 2011 S YLLABUS 1. Catalog Description: (3 credits) Passage of electrical noise and signals through linear systems. Statistical represe