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Unformatted text preview: Eli33}. Devices and Circuits E . Instructor: Tai—Chang Chen
Midterm #1 10:30 — 11203111 10/26/2007 Monday Complete the following information: Name: éﬂ‘bkbﬁ‘KOﬂ " Student Number: Notes: 1. This exam is closed book, closed notes, closed homework and homework solutions.
You are permitted one 8.5” x 11” doublesided sheet of summary notes. 2. Try to ﬁt your work onto the same sheet as the problem itself. If you need to include
additional sheets, place these immediately behind the sheet that the problem is on. 3. Partial credit will be based upon how well you describe What you are doing.
4. Answers with no units, when applicable, will receive zero credit. 5. The grade is distributed among the problems as follows: _ Points Possible Problem 1 —
ProblemZ — Problem 3 6. Good luck! Problem 1: Intrinsic carrier concentration calculation (20 points) In a Borondoped silicon layer with impurity concentration of 1016 lcm3, ﬁnd the holerand
electron concentrations at 25°C and 125°C. . r a I
Nﬁ: toi Cm; bum “Tawin agent qugﬂa) am; 11?; {3431) 8 m; Ar\i§17‘\\o tin/{'3 1, Problem 2: IanJunction Calculations: (60 points) A pllqulCtiOD is shown below and has the following material and structural parameters: In = 1010 sin3, NA = 2.0 x 1016 urn3, ND = 1.0 x 10” mi VT 2 26 mV, 6 = 1.6 2110'” C,
er = 11.7, 80 = 8.85 x 10'14 Plan, L1,, = 1200 cmles, pp = 450 cmZNs, Ln = 50 pm,
L1) = 50 pm,h=10(} pm, (1 =100 pm. VD [A; 15 points] Compute the width of the depletion region W in microns at zero bias. V19? 1*" VTQWKNAAﬁ? 3 :OJjCHaE V \ N K we was) = ﬂ..k_l_+_l_)vbﬂ 1, NfA Nb “Mm ' [B; 10 points} Compute the total junction (depletion) capacitance Cj in picoFaIads. .‘ _ erérc ._
L3  TA M tot/amt =1“;th = LM‘I w [C; 15 points] Indicate the direction of the drift and diffusion currents generated by
electrons and holes.  mm cum
Electron _
_
~ IS: (an; Du +_ EA. 7. 6%. t NAILn A}? M at) 3L 2 . it is
"‘" . ‘0 x 1 _ A. 9"”?
‘ w ‘0 inc‘bxoen‘? iD‘jm‘wg [13; 10 points] Compute the current through the diode in in microamperes under the above
conduction of V1) ‘= 0.5V. . . “w; ,
“Vii? K—1 '41)‘ _‘ w
z empowe‘bit. 51) _—. O.{2./,U>,.. D #N? Wis Problem 3. Diode Circuit Analysis: (20 points) Assuming that the diodes in the circuits are ideal, determine the diode states (ON or OFF)
and ﬁnd the value of voltages (V). (a) (b) , 9v 5v 7
e ‘f
10kg 10““ 10k
D1 I 02
V5 VA v
V +
gzokn Emma  10kg glen; ___.L 0] ‘0) 6f 
émes's DM “2% 0R; 20K“ 20K :. VA: 2\5V VB: 4‘gv Epaq" _ 7 V: VA“V:;=ZV.
20K ~— 0‘4gmA \l: Q‘ CMA‘g PCin 2'. lingv, DZ B??— Dl ON <9 ‘3 “2V5? V; ...
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 Spring '08
 Taicheng
 Pn junction, intrinsic carrier concentration, depletion region, 20K ~— 0‘4gmA

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