Midterm_2007FS - Eli-33}. Devices and Circuits E ....

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Unformatted text preview: Eli-33}. Devices and Circuits E . Instructor: Tai—Chang Chen Midterm #1 10:30 — 11203111 10/26/2007 Monday Complete the following information: Name: éfl‘bkbfi‘K-Ofl " Student Number: Notes: 1. This exam is closed book, closed notes, closed homework and homework solutions. You are permitted one 8.5” x 11” double-sided sheet of summary notes. 2. Try to fit your work onto the same sheet as the problem itself. If you need to include additional sheets, place these immediately behind the sheet that the problem is on. 3. Partial credit will be based upon how well you describe What you are doing. 4. Answers with no units, when applicable, will receive zero credit. 5. The grade is distributed among the problems as follows: _ Points Possible Problem 1 — ProblemZ — Problem 3 6. Good luck! Problem 1: Intrinsic carrier concentration calculation (20 points) In a Boron-doped silicon layer with impurity concentration of 1016 lcm3, find the holerand electron concentrations at 25°C and 125°C. . r a I Nfi: toi Cm; bum “Ta-win agent qugfla) am; 11?; {3431) 8 m; Ar\i§17‘\\o tin/{'3 1, Problem 2: Ian-Junction Calculations: (60 points) A pll-qulCtiOD is shown below and has the following material and structural parameters: In = 1010 sin-3, NA = 2.0 x 1016 urn-3, ND = 1.0 x 10” mi VT 2 26 mV, 6 = 1.6 2110'” C, er = 11.7, 80 = 8.85 x 10'14 Plan, L1,, = 1200 cmles, pp = 450 cmZNs, Ln = 50 pm, L1) = 50 pm,h=10(} pm, (1 =100 pm. VD [A; 15 points] Compute the width of the depletion region W in microns at zero bias. V19? 1*" VTQWKNAAfi? 3 :O-JjCHaE V \ N K we was) = fl..k_l_+_l_)vbfl 1, NfA Nb “Mm ' [B; 10 points} Compute the total junction (depletion) capacitance Cj in picoFaIads. .‘ _ erérc -._ L3 - TA M tot/amt =1“;th = LM‘I w [C; 15 points] Indicate the direction of the drift and diffusion currents generated by electrons and holes. - mm cum Electron _ -_ ~ IS: (an; Du +_ EA. 7. 6%. t NAIL-n A}? M at) 3L 2 . it is "‘-" . ‘0 x 1- _ A. 9"”? ‘ w ‘0 inc‘bxoen‘? iD‘jm‘wg [13; 10 points] Compute the current through the diode in in microamperes under the above conduction of V1) ‘= 0.5V. . . “w; , “Vii? K—1 '41)‘ _‘ w z empowe‘bit. 5-1) -_—. O.{2./|,U>,.. D #N? Wis Problem 3. Diode Circuit Analysis: (20 points) Assuming that the diodes in the circuits are ideal, determine the diode states (ON or OFF) and find the value of voltages (V). (a) (b) , 9v 5v 7 e ‘f 10kg 10““ 10k D1 I 02 V5 VA v V + gzokn Emma - 10kg glen; ___.L 0-] ‘0) 6f - émes's DM- “2% 0R; 20K“ 20K :. VA: 2\5V- VB: 4‘gv- Epaq" _ 7 V: VA“V:;=-ZV. 20K ~— 0‘4gmA- \l: Q‘ CMA‘g PCin 2'. ling-v, DZ B??— Dl ON <9 ‘3 “2V5? V; ...
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This test prep was uploaded on 04/10/2008 for the course EE 331 taught by Professor Taicheng during the Spring '08 term at University of Washington.

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Midterm_2007FS - Eli-33}. Devices and Circuits E ....

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