EE_331F_2007_-_HW5S

EE_331F_2007_-_HW5S - EE 331 Devices and Circuits I Problem...

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EE 331 Devices and Circuits I Autumn 2007 Problem Set #5 Solution 4.4 (a) K n ' = μ n C ox " = n ε ox T ox = n 3.9 o T ox = 500 cm 2 V sec 3.9 8.854 x 10 14 F / cm ( ) 50 x 10 9 m 100 cm / m () K n ' = 34.5 x 10 6 F V sec = 34.5 x 10 6 A V 2 = 34.5 A V 2 (b) & (c) Scaling the result from part (a) yields K n ' = 34.5 A V 2 50 nm 20 nm = 86.3 A V 2 | K n ' = 34.5 A V 2 50 nm 10 nm = 173 A V 2 K n ' = 34.5 A V 2 50 nm 5 nm = 345 A V 2 4.9 a K n = K n ' W L = 200 A V 2 60 m 3 m = 4.00 mA V 2 b K n = 200 A V 2 3 m 0.15 m = 4.00 mA V 2 c K n = 200 A V 2 10 m 0.25 m = 8.00 mA V 2 4.10 a 0 < 1 V cutoff region, I D = 0 b ( ) 1V = 1V cutoff region, I D =0 (c) V GS - V TN =1 V , V DS = 0.1 V triode region I D = K n ' W L V GS V TN V DS 2 V DS = 250 A V 2 10 m 1 m 2 1 0.1 2 0.1 =+ 231 A (d) V GS - V TN =2 V V DS = 0.1 V triode region I D = K n ' W L V GS V TN V DS 2 V DS = 250 A V 2 10 m 1 m
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This homework help was uploaded on 04/10/2008 for the course EE 331 taught by Professor Taicheng during the Spring '08 term at University of Washington.

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EE_331F_2007_-_HW5S - EE 331 Devices and Circuits I Problem...

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