EE_331F_2007_-_HW5S

EE_331F_2007_-_HW5S - EE 331 Devices and Circuits I Problem...

This preview shows pages 1–2. Sign up to view the full content.

EE 331 Devices and Circuits I Autumn 2007 Problem Set #5 Solution 4.4 (a) K n ' = μ n C ox " = n ε ox T ox = n 3.9 o T ox = 500 cm 2 V sec 3.9 8.854 x 10 14 F / cm ( ) 50 x 10 9 m 100 cm / m () K n ' = 34.5 x 10 6 F V sec = 34.5 x 10 6 A V 2 = 34.5 A V 2 (b) & (c) Scaling the result from part (a) yields K n ' = 34.5 A V 2 50 nm 20 nm = 86.3 A V 2 | K n ' = 34.5 A V 2 50 nm 10 nm = 173 A V 2 K n ' = 34.5 A V 2 50 nm 5 nm = 345 A V 2 4.9 a K n = K n ' W L = 200 A V 2 60 m 3 m = 4.00 mA V 2 b K n = 200 A V 2 3 m 0.15 m = 4.00 mA V 2 c K n = 200 A V 2 10 m 0.25 m = 8.00 mA V 2 4.10 a 0 < 1 V cutoff region, I D = 0 b ( ) 1V = 1V cutoff region, I D =0 (c) V GS - V TN =1 V , V DS = 0.1 V triode region I D = K n ' W L V GS V TN V DS 2 V DS = 250 A V 2 10 m 1 m 2 1 0.1 2 0.1 =+ 231 A (d) V GS - V TN =2 V V DS = 0.1 V triode region I D = K n ' W L V GS V TN V DS 2 V DS = 250 A V 2 10 m 1 m

This preview has intentionally blurred sections. Sign up to view the full version.

View Full Document
This is the end of the preview. Sign up to access the rest of the document.

This homework help was uploaded on 04/10/2008 for the course EE 331 taught by Professor Taicheng during the Spring '08 term at University of Washington.

Page1 / 3

EE_331F_2007_-_HW5S - EE 331 Devices and Circuits I Problem...

This preview shows document pages 1 - 2. Sign up to view the full document.

View Full Document
Ask a homework question - tutors are online