EE_331F_2007_-_HW1S

EE_331F_2007_-_HW1S - EE 331 Devices and Circuits I...

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EE 331 Devices and Circuits I Autumn 2007 Solution Set #1 Answer the following problems from Jaeger (3 rd Ed.). Each problem has 20 points (100 points total) 2.2 Based upon Table 2.1, a resistivity of 10 15 Ω -cm > 10 5 Ω -cm, and silicon dioxide is an insulator. 2.5 Define an M-File: function f=temp(T) ni=1E14; f=ni^2-1.08e31*T^3*exp(-1.12/(8.62e-5*T)); n i = 10 14 /cm 3 for T = 506 K n i = 10 16 /cm 3 for T = 739 K 2.11 v n =− μ n E 1000 cm 2 V s 2000 V cm =+ 2.00 x 10 6 cm s v p p E 400 cm 2 V s 2000 V cm 8.00 x 10 5 cm s j n qnv n 1.60 x 10 19 C () 10 3 1 cm 3 + 2.00 x 10 6 cm s 3.20 x 10 10 A cm 2 j p = qnv p = 1.60 x 10 19 C 10 17 1 cm 3 8.00 x 10 5 cm s 1.28 x 10 4 A cm 2 2.14
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For intrinsic silicon, σ = q μ n n i + p n i () = qn i n + p ( ) 1000 Ω− cm 1 for a conductor n i q n + p = 1000 cm 1 1.602 x 10 19 C 100 + 50 cm 2 v sec = 4.16 x 10 19 cm 3 n i 2 = 1.73 x 10 39 cm 6 = BT 3 exp E G kT with B = 1.08 x 10 31 K 3 cm 6 , k = 8.62x10 -5 eV/K and E G = 1.12 eV This is a transcendental equation and must be solved numerically by iteration.
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This note was uploaded on 04/10/2008 for the course EE 331 taught by Professor Taicheng during the Spring '08 term at University of Washington.

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EE_331F_2007_-_HW1S - EE 331 Devices and Circuits I...

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