HW8 - ECE 162A, Fall 2007 HW 8 Due: Thursday, 6th December...

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ECE 162A, Fall 2007 HW 8 Due: Thursday, 6 th December 1. It can be shown that the conduction and valence band-edges of an AlGaAs- GaAs-AlGaAs quantum well structure can be modeled as a finite potential well as shown in the figure below. The GaAs quantum well is 10 nm. wide. The only difference to be made is the replacement of the electronic mass ‘ m e with what is known as an electron’s “Effective Mass” in a solid. For GaAs the CB effective mass = 0.067m e . For the valence band maximum in GaAs, assume a hole effective masses of 0.45m e . Assume a bandgap energy of GaAs of 1.42 eV, 1.92 eV for AlGaAs, and assume a conduction band discontinuity of 0.3 eV and a valence band discontinuity of 0.2 eV. a) Assume the flat bands shown below. Using the code you wrote for HW 3, find out how many bound states there are in the conduction and valence bands and where they are located on the energy axis, w.r.t the conduction and valence band edges respectively. b) Assuming a temperature of 300K and the values of Nc and Nv given in
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This note was uploaded on 04/11/2008 for the course ECE 162a taught by Professor Johnbowers during the Fall '07 term at UCSB.

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HW8 - ECE 162A, Fall 2007 HW 8 Due: Thursday, 6th December...

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