ECE231 - 2007 - Term Test 2 Solutions

ECE231 - 2007 - Term Test 2 Solutions - ECE23IS ——...

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Unformatted text preview: ECE23IS —— Introductory Electronics Midterm Examination 2 Lecturers — K. Phang, R. Genov, B. Wang Date — Friday, March 23, 2007 Duration: 50 minutes 1. Answers should be written in non—erasable pen. Warning: answers written in pencil may be considered ineligible for remarking. 2. The marks for each question are indicated within brackets. Place your final answers in the boxes where given. 3. Show your work: answers without justification will not receive full marks! 4. Use back sides of sheets if necessary. Extra sheets are also provided at the end. 5. Aids: any calculators (including programmable ones) and the equation sheet. /5 Last Name: First Name: Student #: Circle your regular tutorial room: BAB024 / BA2145 / 2155 / 2165 / 2175 / 2185 / 2195 page 1 of 9 Equation Sheet Constants: VT = Hz 25mV at room temperature k = 1.38 x 10—23JK_I q = 1.6 x 1049C 5] Diode equations: 110/” V7 _1) General expression: I'D = 13(e iD = IsevD/HVT Forward biased region: VD : 2_303nVT10g(iD/IS) ng—VD] = 2.303nV710g(iD2/im) - . nVT Small-Signal re51stance: rd : 7.. D NMOS Transistor Equations: C Saturation (or active) region: i0 = Elli—E‘VZVOIGS— Vm)2(1 + lizDS) 2 v Triode region: I'D = pl7C0xVZV|:(vGS— V,")vDS— ——%§-—] 1 W MnCcmZ-(VGS _ Vin) Deep triode region: rDS = PMOS Transistor Equations: C . Saturation (active) region: I'D = E‘92-‘31/21/(VSG—|V,p|)2(1 + [MvSD) W v 2 Triode region: I'D = upCaxf[(vSG—|le|)v50__§22_] 1 W lJ‘pCaxf(vSG _ |th[) Deep triode region: r05 = Small-signal transistor equations (for NMOS): . W _ W 21D Transconductance. gm : anCox—L—ID — pnCDIZ(VGS— Vm) : V—_—V GS In Output resistance r — L — K4 0 ’ MD _ ID Last Name: Question 1: [5] For the circuit shown below assume the “ON” diode voltage is 0.7V. Sketch the output voltage, v0U7(t), on the graph below for the given input voltage, v1N( t). Mark all of the important points on your graph. V]N(t) VOL/fit) page 2 of 9 Last Name: Question 2: [5] For the circuit shown below, assume that HPCOX=50HAN2, th=—O.8V, and 7t=0. 5V 5V 6kg 4k£2 (a) What region is the PMOS transistor operating in (circle one answer)? fia/LLIath/m jigfiO/w’l—VM if => Va wA 2 2v] aw! W am Vs; =- S’Vr'Zt/"r 3V > )WH: 05v Cut—off Triode W cm ’wadgflmmw." Saturation) " I if? __. K m x” ' . A 2125;331:3232: i‘ , .. g f % 1 : 4.. "will 3 m ‘ {3% v» {3,an «w-wtj iarffi 3" lama (b) Determine the aspect ratio, W/L, of the PMOS transistor required to bias the drain at 3.2V. page 3 of 9 Last Name: Question 3: [5] For the diode attenuator circuit shown below find the value of VDD needed to achieve a small—signal ac voltage gain, v0(t)/vi(t), of 0.01. For dc analysis, assume that the diode has a 0.7V voltage drop across it when conducting. For small—signal analysis, assume that n=1 and VT=25mV. Assume also that the capacitors have very large values. Last Name: Question 3: extra sheet. D C Q JM‘d-lflf’; 5W? V} VT »5 _~ ##— \ mV ngxm For “‘ 7- ‘5 «.71: V : /———————~:: 0.116,”; “B r44 ZIOJY {#933 well V ’o—7V iii?) :13; (m) lollflmfl ’ how page 6 of 9 Last Name: Question 4: [5] The circuit shown below acts as a low—pass filter. Assume that unCOX=100tLA/V2, Vm=0.7V, 9t=0 and ignore the Body effect. Assume also that v, is a sinusoidal signal with a small amplitude and a zero dc offset. VOUT C=lnF .1|__| (a) What region is the NMOS transistor operating in (circle one answer)? [,3 ZéV*’*Q\J:. Law >— wfioyv Saturation Cut—off (b) What is the time constant of this circuit? Es <£’(~6>{S page 7 of 9 ...
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This note was uploaded on 04/17/2008 for the course ECE 231 taught by Professor Phang during the Winter '08 term at University of Toronto- Toronto.

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ECE231 - 2007 - Term Test 2 Solutions - ECE23IS ——...

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