hw2_sol - EE214 Winter 04/05 Page 1 of 1 HOMEWORK #2...

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EE214 Winter 04/05 Page 1 of 1 HOMEWORK #2 Solutions (Due: Monday, October 11, 2004, noon PT) 1. Use Spice to simulate g m /I D vs. V OV , (e.g. as shown on slides 3 and 4 of lecture 4). a) Generate a plot of g m /I D for EE214 NMOS devices with L=0.35 µ m and L=0.7 µ m in one diagram from V OV = 0V to 300 mV. b) Repeat part (a) for PMOS devices, also using the above two channel lengths. c) Measure (e.g. using .measure statements or graphically in Awaves) and tabulate selected g m /I D values using the table below Simulated g m /I D Long Channel Estimate % Error NMOS, L=0.35 µ m, V OV =50mV 18.3 40 118 NMOS, L=0.7 µ m, V OV =50mV 18.6 40 115 NMOS, L=0.35 µ m, V OV =250mV 7.06 8 13 NMOS, L=0.7 µ m, V OV =250mV 7.47 8 7 PMOS, L=0.35 µ m, V OV =50mV 14.2 40 181 PMOS, L=0.7 µ m, V OV =50mV 14.6 40 174 PMOS, L=0.35 µ m, V OV =250mV 6.49 8 23 PMOS, L=0.7 µ m, V OV =250mV 6.97 8 15 Spice Deck (PMOS in comments) * Hw 2, Number 1 .param length=.35u .param gs=1 vgs g 0 dc 'gs' mn1 g g 0 0 nch214 W=10u L='length'
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This note was uploaded on 04/17/2008 for the course EE 214 taught by Professor Murmann,b during the Fall '04 term at Stanford.

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hw2_sol - EE214 Winter 04/05 Page 1 of 1 HOMEWORK #2...

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