h04_hw1

h04_hw1 - a) Draw an equivalent small signal model for this...

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EE214 Winter 04/05 Handout #4 B. Murmann Page 1 of 2 HOMEWORK #1 (Due: Monday, October 4, 2004, noon PT) You will not need (and should not use) Spice for any part of this problem set. Use simple long channel MOS models in all problems and ignore finite output resistance and device capacitances. 1. Text, Problem 2.12. 2. Text, Problem 2.18. 3. Text, Problem 3.4 (No need to check your answer with Spice). 4. Derive the equation at the bottom of slide 8, lecture 2 by differentiating the large signal transfer function of the common source amplifier. 5. In the common source stage shown below, the MOS device is purposely biased to operate in the triode region. Derive an expression for the low frequency small signal gain v o /v i as a function of the devices quiescent point voltages V GS and V DS . Please comment on the achievable gain. V o V i 6. Consider the two-stage amplifier shown below.

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Unformatted text preview: a) Draw an equivalent small signal model for this circuit. . b) Calculate the small signal gains v o2 /v i and v o1 /v i . Assume that V B and the devices sizes are chosen such that the DC bias point of nodes V o1 and V o2 is exactly at V DD /2. You are also given V tn =|V tp |=0.5V. Assume V DD =2V. c) Suppose we now reduce V DD , with all device sizes and V B unchanged from (b). What is the minimum V DD that guarantees to keep the transistors in saturation at all times? Assume that the peak amplitude of v i is 5mV. Note : There are several Last modified 9/27/2004 8:02 AM EE214 Winter 04/05 Handout #4 B. Murmann Page 2 of 2 possible ways to solve this problem. In case you make any simplifying assumptions, especially with respect to small signals, make sure to state them clearly. V o1 v i V B V o2 V DD Last modified 9/27/2004 8:02 AM...
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This note was uploaded on 04/17/2008 for the course EE 214 taught by Professor Murmann,b during the Fall '04 term at Stanford.

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h04_hw1 - a) Draw an equivalent small signal model for this...

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