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h06_lecture4_2

# h06_lecture4_2 - Lecture 4 EE214 Technology gm/ID...

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EE 214 Lecture 4 (HO#6) B. Murmann 1 Lecture 4 EE214 Technology: g m /I D Subthreshold Operation Short Channel Effects Boris Murmann Stanford University [email protected] Copyright © 2004 by Boris Murmann EE 214 Lecture 4 (HO#6) B. Murmann 2 Overview Reading 1.8 (Weak Inversion) 1.7 (Short Channel Effects) Introduction Last lecture, we found that one important figure of merit for transistors is the transconductor efficiency, g m /I D . Today we'll look at g m /I D in our EE214 0.35 µ m technology. We will find that additional modeling is needed to explain the behavior of this parameter below and around V t , and also the deviation from the long channel model in strong inversion. This leads us to an analysis of subthreshold current and an introduction to short channel effects.

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EE 214 Lecture 4 (HO#6) B. Murmann 3 g m /I D Simulation \$ gm/id vs. gate overdrive \$ Boris Murmann, September 2004 .param gs=1 vgs g 0 dc 'gs' mn1 g g 0 0 nch214 L=0.35um W=10um .op .dc gs 0.4V 1.2V 10mV .probe ov = par('gs-vth(mn1)') .probe gm_id = par('gmo(mn1)/i(mn1)') .options post brief .lib './ee214_hspice.txt' nominal .end 10/0.35 EE 214 Lecture 4 (HO#6) B. Murmann 4 Result -0.2 -0.1 0 0.1 0.2 0.3 0.4 0.5 0 5 10 15 20 25 30 35 40 V OV [V] g m /I D [1/V] EE214 technology 2/V OV BJT (q/kT)