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# MCD_3E_Answers - MICROELECTRONIC CIRCUIT DESIGN Third...

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MICROELECTRONIC CIRCUIT DESIGN Third Edition Richard C. Jaeger and Travis N. Blalock Answers to Selected Problems – Updated 9/18/07 Chapter 1 1.3 1.52 years, 5.06 years 1.5 1.95 years, 6.46 years 1.8 113 MW, 511 kA 1.10 2.50 mV, 5.12 V, 5.885 V 1.12 19.53 mV/bit, 10001110 2 1.16 0.002 A, 0.002 cos (1000 t ) A 1.19 v DS = [5 + 2 sin (2500 t ) + 4 sin (1000 t )] V 1.21 15.7 V, 2.31 V, 70.0 μ A, 210 μ A 1.23 120 μ A, 125 μ A, 10.3 V 1.25 39.6 Ω , 0.0253 v s 1.27 56 k Ω , 1.33 x 10 -3 v s 1.29 1.00 M Ω , 2.50 x 10 8 i s 1.33 5 / 45 ° , 100 / 12 ° 1.35 -90.1 sin 750 π t mV, 11.0 sin 750 π t μ A 1.37 1 + R 2 /R 1 1.39 -1.875 V, -2.500 V 1.41 Band-pass amplifier 1.43 50.0 sin (2000 π t ) + 30.0 cos (8000 t ) V 1.45 0 V 1.47 [2970 Ω , 3030 Ω ], [2850 Ω , 3150 Ω ], [2700 Ω , 3300 Ω ] 1.52 6200 Ω , 800 ppm/ o C 1.58 3.29, 0.995, 6.16; 3.295, 0.9952, 6.155

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2 Chapter 2 2.4 For Ge: 35.9/cm 3 , 2.27 × 10 13 /cm 3 , 8.04 × 10 15 /cm 3 2.7 1.75 x 10 6 cm s , + 6.25 x 10 5 cm s , 2.80 x 10 4 A cm 2 , 1.00 x 10 10 A cm 2 2.8 305.2 K 2.10 4 ΜΑ /cm 2 2.13 1.60 x 10 7 A/cm 2 , 4.00 A 2.15 316.6 K 2.19 Donor, acceptor 2.20 200 V/cm 2.22 5 x 10 3 atoms 2.24 4 x 10 16 /cm 3 , 2.50 x 10 5 /cm 3 2.28 6 x 10 18 /cm 3 , 16.7/cm 3 , 5 x 10 9 /cm 3 , 8.80 x 10 -10 /cm 3 2.30 3 x 10 17 /cm 3 , 333/cm 3 2.32 100/cm 3 , 10 18 /cm 3 , 375 cm 2 /s, 100 cm 2 /s, p-type, 62.4 m Ω -cm 2.34 10 16 /cm 3 , 10 4 /cm 3 , 800 cm 2 /s, 1230 cm 2 /s, n-type, 0.781 Ω -cm 2.38 3.06 x 10 18 /cm 3 2.40 Yes—add equal amounts of donor and acceptor impurities. Then n = n i = p , but the mobilities are reduced. See Prob. 2.37. 2.42 2.00/ Ω -cm, 3.1 x 10 19 /cm 3 , 2.44 75K: 6.64 mV, 150K: 12.9 mV, 300K: 25.8 mV, 400K: 34.5 mV 2.46 -1.20 x10 5 exp (-5000 x/cm) A/cm 2 ; 12. 0 mA 2.48 The width in the figure should be 2 μ m: For x = 0, -535 A/cm 2 2.50 1.108 μ m
3 Chapter 3 3.1 0.0373 μ m, 0.0339 μ m, 3.39 x 10 -3 μ m, 0.979 V, 5.24 x 10 5 V/cm 3.3 10 18 /cm 3 , 10 2 /cm 3 , 10 18 /cm 3 , 10 2 /cm 3 , 0.921 V, 0.0488 μ m 3.6 2.55 V, 1.05 μ m 3.10 6400 A/cm 2 3.13 1.00 x 10 21 /cm 4 3.17 290 K 3.20 312K 3.21 1.39, 3.17 pA 3.22 0.837 V; 0.768 V; 0 A; 9.43 x 10 -19 A, -1.00 x 10 -18 A 3.25 1.34 V; 1.38 V 3.28 0.518 V; 0.633 V 3.31 0.757 V; 0.721 V 3.34 1.96 mV/K 3.37 0.633 V, 0.949 μ m, 3.89 μ m, 12.0 μ m 3.39 374 V 3.41 4 V, 0 Ω 3.43 9.80 nF/cm 2 ; 188 pF 3.45 400 fF, 10 fC; 100 pF, 0.5 pC 3.49 9.97 MHz; 15.7 MHz 3.51 0.495 V, 0.668 V 3.53 0.708 V, 0.718 V 3.56 (a) Load line: (450 μ A, 0.500 V); SPICE: (443 μ A, 0.575 V) (b) Load line: (-667 μ A, -4 V); (c) Load line: (0 μ A, -3 V); 3.59 (0.600 mA, -4 V) , (0.950 mA, 0.5 V) , (-2.00 mA, -4 V) 3.65 Load line: (50 μ A, 0.5 V); Mathematical model: (49.9 μ A, 0.501 V); Ideal diode model: (100 μ A, 0 V); CVD model: (40.0 μ A, 0.6 V) 3.69 (a) 0.625 mA, 3 V; 0.625 mA, -5 V; 0 A, -5 V; 0 A, 7 V 3.71 (a) (409 μ A, 0 V), (270 μ A, 0 V); (c) (0 A -3.92 V), (230 μ A, 0 V) 3.73 (a) (0.990 mA, 0 V) (0 mA, -1.73 V) (1.09 mA, 0)

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MCD_3E_Answers - MICROELECTRONIC CIRCUIT DESIGN Third...

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