454Lec02_Fab1

454Lec02_Fab1 - ECEN 454 Digital Integrated Circuit Design...

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ECEN 454 Lecture 2 1 ECEN 454 Digital Integrated Circuit Design Lecture 2 IC Fabrication I
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ECEN 454 Lecture 2 2 A Glimpse at MOS Device Polysilicon Aluminum
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ECEN 454 Lecture 2 3 Material Classification Insulators ± Glass, diamond, silicon oxide Semiconductors ± Germanium (Ge), Silicon (Si), Gallium Arsenide (GaAs) Conductors ± Aluminum, copper, gold Increasing conductivity
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ECEN 454 Lecture 2 4 Wafer Processing Czochralski method ± Melt pure polycrystalline silicon in a pot (1400C) ± A seed crystal is dipped to determine the crystal orientation ± Single-crystal ingot is made as polycrystalline silicon is slowly pulled out and freezes
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ECEN 454 Lecture 2 5 Wafer Processing Silicon ingots have a diameter of 8-12 inches Ingots are carefully cut into thin disks (wafers) A wafer is typically 200-500um thick
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ECEN 454 Lecture 2 6 Wafer From http://www.amd.com A single die Wafer and Die
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ECEN 454 Lecture 2 7 IC Fabrication Process Consists of a sequence of processing steps: ± Various conducting, semi-conducting and insulating material layers are fabricated to form appropriate 3d device structures Major processing steps are: ± Lithography ± Oxidation ± Layer deposition ± Etching ± Diffusion ± Implantation
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ECEN 454 Lecture 2 8 Lithography Process to transfer patterns defined on optical masks to the chip Selectively process a material layer Commonly employed procedure is photolithography
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This note was uploaded on 04/17/2008 for the course ELEN 454 taught by Professor Jianghu during the Spring '08 term at Texas A&M.

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454Lec02_Fab1 - ECEN 454 Digital Integrated Circuit Design...

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