454Fall07HW4

454Fall07HW4 - 3. (5 points) The I-V characteristic of an...

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ECEN 454 Digital Integrated Circuit Design Fall 2007 Homework 4 Due on October 19, Friday 1. (5 points) Prob. 5.1 of the textbook. 2. (5 points) An enhancement-type nMOS load inverter (see figure below) has the following device parameters: V V T 8 . 0 0 = , 2 / 0 . 45 V A C ox n μ = 0 = λ (no channel length modulation) V DD = 5V. Assume that the body-effect can be neglected. a) Compute V OH , V OL and noise margins. b) Assume that the input is a logic “1” (V in = V OH ) for 50% of time. Compute the DC power consumption of the inverter.
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Unformatted text preview: 3. (5 points) The I-V characteristic of an nMOS transistor is plotted in the following figure. A resistive-load inverter is designed using this nMOS transistor and a 15K Ohms resistive load. Determine the VTC of the inverter graphically. You should explain in details how you obtain the points on your VTC. 4. (5 points) Problem 5.6 of the textbook. I DS (uA) V DS (V) V GS =5V V GS =4V V GS =3V V GS =2V V GS =1V...
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454Fall07HW4 - 3. (5 points) The I-V characteristic of an...

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