HW_3_solutions - down Release the structure To minimize the...

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HW 3 solutions, ECE432 MEMS MUMPS Process
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P.2 Thin Film Stress: P.3
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Silicon substrate Nitride deposition Deposit and pattern oxide Deposit and pattern poly, oxide (0.2 um) and nitride (0.4um) are etched
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Unformatted text preview: down Release the structure To minimize the over etching problem by changing the layout: Deposit Oxide Pattern oxide for anchor hole Deposit and pattern poly Release the structure...
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HW_3_solutions - down Release the structure To minimize the...

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