Lecture 6 - Carrier Concentrations - Fermi Level - Drift

Lecture 6 - Carrier Concentrations - Fermi Level - Drift -...

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Unformatted text preview: 1 EE360 Lecture 64 Carrier Concentrations and Carrier Action Objective: Be able to calculate carrier concentrations and currents in semiconductor devices. Questions to be Answered: Review and examples: How do we calculate carrier concentrations in practice? How and why do we calculate the Fermi level? How does drift describe carrier motion? EE360 Lecture 64 Carrier Distributions and Concentrations: Review n-type material (more electrons than holes) intrinsic material (equal number of electrons and holes) p-type material (more holes than electrons) Pierret, p. 47 Pierret, p. 49 2 EE360 Lecture 64 Carrier Concentration: Direct Approach Integrate carrier distribution over the conduction band to find n and over the valence band to find p Integral of cond. band carrier distribution Integral of val. band carrier distribution Integrate Integrate Carrier Distribution Pierret, p. 50 Pierret, p. 47 EE360 Lecture 64 Carrier Concentration: Direct Approach Definition: effective density of states (does not depend on E ) Non-degenerate assumption: If E C- E F 3 kT and E F- E C 3 kT, then we say the semiconductor is non-degenerate kT E E kT E E C C F F C e e E f / ) ( / ) ( 1 1 ) ( + = Pierret, p. 51 Pierret, p. 52 3...
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This note was uploaded on 04/20/2008 for the course EE 360 taught by Professor Hastings during the Spring '08 term at Kentucky.

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Lecture 6 - Carrier Concentrations - Fermi Level - Drift -...

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