Lecture 21 - MOSFET Operation

Lecture 21 - MOSFET Operation - Exam 2 March 28th(next...

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1 Exam 2 • March 28 th (next Friday) Review in class on Wednesday • Review in class on Wednesday • Covers material through Monday (03/24/07) • Not cumulative • Two note sheets (single sided, 8.5” x 11” paper EE360 – Lecture 21 paper) MOSFETs: Basic Device Characteristics Objective: Understand the physics and models of semiconductor devices including … field-effect transistors. Questions to be answered: • How do we form a MOSFET? EE360 – Lecture 21 • What are the MOSFET operating regions?
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2 MOSFET Structure p-bulk (n-channel or NMOS) device MOSFET: M etal- O xide- S emiconductor F ield E ffect T ransistor From S.M. Sze EE360 – Lecture 21 • MOS Capacitor with pn-junctions on each side • 4 terminal device: source, drain, gate, and substrate (or body) terminals • Source is grounded and often connected to the body • Z is the width of the device, L is the length of the channel MOSFET Structure • p-bulk (n-channel) with typical connections (source, drain, gate, and 2D body) shown • electrons flow from left to right (from source to drain) • positive drain current, I D , From Pierret, pg. 612 Principle of operation: EE360 – Lecture 21 is defined as flowing from right to left V G controls I D
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3 Operating Regions -F o r V G < V T no inv. Layer exists and V D 0 a) Equilibrium: no source-drain bias, gate biased for inversion ( V G > V T, V D =0) b) Linear region ( V G > V T V D small): T, small): • drain reverse biased with respect to the bulk • drain depletion region expands • channel carrier concentration reduced near drain c) Pinch-off ( V G > V T, V D = V
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This note was uploaded on 04/20/2008 for the course EE 360 taught by Professor Hastings during the Spring '08 term at Kentucky.

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Lecture 21 - MOSFET Operation - Exam 2 March 28th(next...

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