Lecture 22 - MOSFET Small Signal Response

Lecture 22 - MOSFET Small Signal Response - MOS ID-VD...

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1 MOS I D - V D Relationship and Small Signal Response Objective: Understand the physics and models of semiconductor devices including field-effect transistors including … field effect transistors. Questions to be answered: • What are the basic small signal equivalent circuits for a MOSFET? EE360 – Fall 2006 - Lecture 22 • How fast can a MOSFET operate? • How can we use the small signal models to characterize devices? NMOS (p-bulk) Operating Regions: I D vs. V D Saturation () 2 2 Dsat n o G T Z IC V V L µ ≈− Linear through Pinch-off 2 2 D D T G o n D V V V V C L Z I Dsat G T VV V =− EE360 – Fall 2006 - Lecture 22 Linear Region Dn o G T D Z V V V L 0 00 2 22 s A TF F s Kx qN V KK φ ε =+
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2 Small Signal Response • Goal: Determine MOSFET response when “small” AC signals ( v d and v g ) are applied on top of DC biases ( V D and V G ) • What defines a “small” signal? – Non-linear device behavior is approximately linear – Superposition holds, we can separately analyze and sum the effects of different AC signals EE360 – Fall 2006 - Lecture 22 • Drain current is given by: d G D D g G d D D i V V I v V v V I + + + ) , ( ) , ( dc current ac (small signal) current Small Signal Response • If we expand the drain current to first order
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Lecture 22 - MOSFET Small Signal Response - MOS ID-VD...

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