EE 435 Exam 1 Spring 2014

EE 435 Exam 1 Spring 2014 - 1 EE 435 Name Exam 1 Spring...

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1 EE 435 Name________________________ Exam 1 Spring 2014 Instructions: The points allocated to each problem are as indicated. Note that the first and last problem are weighted more heavily than the rest of the problems. On those problems that need technology parameters, assume you are working in a 0.5μm CMOS process with process with n C OX =100 A/v 2  p C OX =30 A/v 2 ,V TNO =0.8V, V TPO = - 0.8V, C OX = =2fF/ 2 , = 0.01v -1 ,    Cbdbot = 0.5fF/ 2 , and Cbdsw = 2.5fF/ . As a take-home exam, all work on this exam must be done individually. There should be no collaboration with anyone except for the course instructor, R. Geiger, should there be any questions. Since this is a take-home exam, please address any questions you may have by email to the course instructor. An immediate response can not be promised but I will check my email periodically throughout the weekend. You will be asked to make the following statement and provide your signature on the top of your solutions. All of the work on this exam is my own and I did not collaborate with anyone about this exam except possibly with the course instructor ____ signature here ______ Problem 1 (20 points) The operational amplifier has been designed with |V EB | = 400mV for all transistors with a total power dissipation of 20mW when biased with a single 4.5V supply (i.e. V DD =4.5V). The length of all transistors is 2μm. a) Determine the GB if it is driving a 10pF capacitive load b) What is the W/L ratio of M 1 ?
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