ENGRI111_HW2_2007 - a patterned metal line on the silicon...

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ENGRI 111 Homework #2 Due Wednesday, September 19, 2007 1) A p-n junction is formed using p-doped and n-doped silicon. a) Draw the shape of the band diagram (showing both the conduction and valence bands) from one side of the junction to the other with no applied bias. b) Show the direction of electron flow when the junction is forward biased. c) Discuss BRIEFLY how the shape of the bands is important to changes in the electron flow when the temperature increases during forward bias. 2) Discuss BRIEFLY two applications of SiO 2 in the fabrication or operation of a MOSFET. Use sketches to illustrate these applications, 3) A metal line needs to be fabricated on top of a silicon wafer using photolithography. The mask that is available to pattern this line is a piece of transparent glass with an opaque strip down the middle. Ignoring the details of how the shadow of this strip is projected onto the wafer, write down the processing steps that are needed to end up with
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Unformatted text preview: a patterned metal line on the silicon wafer without doing any etching of the metal itself. 4) a) Describe the pros and cons of various metals used in interconnects. b) What is electromigration and what are some of the consequences of electromigration in electronic devices. 5) The time to turn on a MOSFET is directly proportional to the product of the gate resistance and the capacitance of the gate. The gate resistance is proportional to the area of the gate times the thickness of the metal used for the gate. The capacitance of the gate is proportional to the area of the gate divided by the thickness of the gate oxide. If the length and width of the gate, the thickness of the gate metallization, and the thickness of the gate oxide are all multiplied by the same factor n, where n< 1, then how does the time to turn on the MOSFET scale? (Use mathematical equations for your answer)....
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This note was uploaded on 02/28/2008 for the course ENGRI 1110 taught by Professor Giannelis during the Fall '07 term at Cornell.

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