ENGRI111_HW2_solutions - ENGRI 111 Homework #2 Solutions 1)...

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Homework #2 Solutions 1) A p-n junction is formed using p-doped and n-doped silicon. a) Draw the shape of the band diagram (showing both the conduction and valence bands) from one side of the junction to the other with no applied bias. b) Show the direction of electron flow when the junction is forward biased. c) Discuss BRIEFLY how the shape of the bands is important to changes in the electron flow when the temperature increases during forward bias. a) no bias b) forward bias c) The slope of the bending between the bands (connecting the p and the n type regions) decreases when the junction is in a forward bias. This decrease in barrier height, along with increased energy (from higher temperature), allows easier flow of electrons. However the total current in forward bias depends also on how many of the electrons flowing over the barrier recombine with holes as they do so, and it turns out that the increase in total current with increasing temperature is not that large. 2) Discuss BRIEFLY two applications of SiO
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This note was uploaded on 02/28/2008 for the course ENGRI 1110 taught by Professor Giannelis during the Fall '07 term at Cornell University (Engineering School).

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ENGRI111_HW2_solutions - ENGRI 111 Homework #2 Solutions 1)...

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