4500PG06 - Generation-Recombination Noise in p-i-n...

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Generation-Recombination Noise in p-i-n Photodiode A p-i-n photodiode is used to detect 1 . 30 μm wavelength light. The diameter of the active detection area of the photodiode is 85 μm . It is operated at a reverse bias voltage of 5 volts . At this bias, the dark current is 0 . 20 nA and the responsivity is 0 . 90 amp/watt . The photogenerated carrier lifetime in this photodiode is 2 . 00 nanoseconds . For a steady (CW or zero frequency envelope variation) illumination of the photodiode at a given optical power level there is a generation-recombination noise current of 8 nA . For the same average illumination level as above, calculate, showing all work, the magnitude of the generation-recombination noise at 100 MHz , 300 , 500 ,1 GHz , 3 ,5 , and 10
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4500PG06 - Generation-Recombination Noise in p-i-n...

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