4500PG04WOS - Gallium Arsenide Slab Waveguide Operation A...

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Unformatted text preview: Gallium Arsenide Slab Waveguide - Operation A heterostructure semiconductor slab waveguide is fabricated by molecular beam epitaxial growth of layers of the ternary alloy semiconductor Al x Ga 1- x As . The wave- guide structure consists of a 1 . 000 μm thick layer of GaAs surrounded by a 500 μm thick cover of Al . 40 Ga . 60 As and a 500 μm thick substrate of Al . 30 Ga . 70 As . The GaAs layer acts as the “film” of the slab waveguide and has a refractive index of n f = 3 . 4210. The waveguide guides light in the GaAs layer. The Al . 40 Ga . 60 As layer has a refractive index of n c = 3 . 2617. The Al . 30 Ga . 70 As layer has a refractive index of n s = 3 . 2998. Since the thicknesses of the cover and substrate are very large compared to the wave- length of the light, these regions may be treated as if they are semi-infinite in thickness. Both TE and TM modes can be excited in the waveguide....
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This note was uploaded on 04/29/2008 for the course ECE 4500 taught by Professor Gaylord during the Spring '08 term at Georgia Tech.

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4500PG04WOS - Gallium Arsenide Slab Waveguide Operation A...

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