LF412 - LF412 Low Offset, Low Drift Dual JFET Input...

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LF412 Low Offset, Low Drift Dual JFET Input Operational Amplifier General Description These devices are low cost, high speed, JFET input opera- tional amplifiers with very low input offset voltage and guar- anteed input offset voltage drift. They require low supply current yet maintain a large gain bandwidth product and fast slew rate. In addition, well matched high voltage JFET input devices provide very low input bias and offset currents. The LF412 dual is pin compatible with the LM1558, allowing designers to immediately upgrade the overall performance of existing designs. These amplifiers may be used in applications such as high speed integrators, fast D/A converters, sample and hold circuits and many other circuits requiring low input offset voltage and drift, low input bias current, high input imped- ance, high slew rate and wide bandwidth. Features n Internally trimmed offset voltage: 1 mV (max) n Input offset voltage drift: 10 μV/˚C (max) n Low input bias current: 50 pA n Low input noise current: n Wide gain bandwidth: 3 MHz (min) n High slew rate: 10V/μs (min) n Low supply current: 1.8 mA/Amplifier n High input impedance: 10 12 n Low total harmonic distortion 0.02% n Low 1/f noise corner: 50 Hz n Fast settling time to 0.01%: 2 μs Typical Connection 00565641 Ordering Information LF412XYZ X indicates electrical grade Y indicates temperature range “M” for military “C” for commercial Z indicates package type “H” or “N” Connection Diagrams Metal Can Package 00565642 Order Number LF412MH, LF412CH or LF412MH/883 (Note 1) See NS Package Number H08A Dual-In-Line Package 00565644 Order Number LF412ACN, LF412CN or LF412MJ/883 (Note 1) See NS Package Number J08A or N08E BI-FET II™ is a trademark of National Semiconductor Corporation. August 2000 LF412 Low Offset, Low Drift Dual JFET Input Operational Amplifier © 2004 National Semiconductor Corporation DS005656 www.national.com
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Simplified Schematic 1/2 Dual 00565643 Note 1: Available per JM38510/11905 Detailed Schematic 00565632 LF412 www.national.com 2
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Absolute Maximum Ratings (Note 2) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. (Note 11) LF412A LF412 Supply Voltage ±22V ±18V Differential Input Voltage ±38V ±30V Input voltage Range (Note 3) ±19V ±15V Output Short Circuit Duration (Note 4) Continuous Continuous H Package N Package Power Dissipation H Package N Package (Note 12) (Note 5) 670 mW T j max 150˚C 115˚C θ jA (Typical) 152˚C/W 115˚C/W Operating Temp. Range (Note 6) (Note 6) Storage Temp. -65˚C T A 150˚C -65˚C T A 150˚C Range Lead Temp. (Soldering, 10 sec.) 260˚C 260˚C ESD Tolerance (Note 13) 1700V 1700V DC Electrical Characteristics (Note 7) Symbol Parameter Conditions LF412A LF412 Units Min Typ Max Min Typ Max V OS Input Offset Voltage R S =10 k ,T A =25˚C 0.5 1.0 1.0 3.0 mV V OS / T Average TC of Input R S =10 k (Note 8) 7 10 7 20 μV/˚C Offset Voltage I OS Input Offset Current V S =±15V T j =25˚C 25 100 25 100 pA (Notes 7, 9) T j =70˚C 2 2 nA T j =125˚C 25 25 nA I B Input Bias Current V S =±15V T j =25˚C 50 200 50 200 pA (Notes 7, 9) T j =70˚C 4 4 nA T j =125˚C 50 50
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LF412 - LF412 Low Offset, Low Drift Dual JFET Input...

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