HW3_soln

HW3_soln - (c) 28 mA (Assuming V GS = V dd ) Comments: For...

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ECE124A VLSI Principles Solutions to Homework #3 Problem 1: (b) Potential Barrier : 4.05 – 0.95 = 3.1 eV.
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Problem 2:
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Problem 3: Ø F =KT/q ln(n i /N a )=0.37 We have given = -1.13 = 0.125 So , Vt = - 0.25
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(b) V T = - 0.25 + 0.0627=-0.1873 Body biasing increases the threshold voltage (makes more positive) of NMOS. Body biasing decreases the threshold voltage (makes more negative) of PMOS.
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Unformatted text preview: (c) 28 mA (Assuming V GS = V dd ) Comments: For NMOS generally the threshold voltage is greater than zero. When the threshold voltage of NMOS becomes negative it shows that the gate material should change to achieve a positive threshold voltage. Regarding to body biasing it should increase the Problem 4: Problem 5: End of solutions to Homework # 3...
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HW3_soln - (c) 28 mA (Assuming V GS = V dd ) Comments: For...

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