Lecture_7_2_Ionimplantation

Lecture_7_2_Ionimplantation - Lecture 7.2 Ion Implantation...

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Ion Implantation Lecture 7.2
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IH2655 Spring 2009 Mikael Östling KTH Ion implantation Introduction Technology and applications Classical distribution model for a -Si Extended model for a -Si Channeling Annealing Damage Activation
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IH2655 Spring 2009 Mikael Östling KTH Implantation of ions in silicon Doping method Control parameters Diffusion Time and temperature Ion implantation (I/I) Current (dose) and voltage (energy) (Sze p.381 ) Diffusion Ion Implantation
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IH2655 Spring 2009 Mikael Östling KTH Advantages with I/I: Low temperature process (hardened resist mask can be used up to ~120 ° C) Accurate measurement of dose using a Faraday cup Good control of resulting vertical dopant profile Lateral engineering possible by tilted implants Very uniform doping across wafer Disadvantages with I/I: I/I introduces crystal damage which requires subsequent annealing at high temperature Anomalous enhanced impurity diffusion during annealing after I/I
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IH2655 Spring 2009 Mikael Östling KTH Schematics of Implantation Tool
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IH2655 Spring 2009 Mikael Östling KTH Ion implantation technology dt q I A Dose = 1 U = extraction voltage B = magnetic field R = radius of analyzing magnet v = ion velocity q MU RB qvB R Mv 2 2 = = Permits separation of ion with mass M and charge q Energy range: 200 eV up to several MeV Ion current I Up to 30 mA Dose range 10 11 up to 2x10 16 cm -2 Gaseous ion sources: BF 3 (for BF 2 and B), Ar Solid ion sources: As, Sb, Ph, Ge, Si Mass separation where A = implanted area
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IH2655 Spring 2009 Mikael Östling KTH Application of Ion Implantation in ICs CMOS Manufacturing 9-10 different I/I identified !
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IH2655 Spring 2009 Mikael Östling KTH
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IH2655 Spring 2009 Mikael Östling KTH
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IH2655 Spring 2009 Mikael Östling KTH Application of I/I: Shallow p + -n junctions Difficult producing shallow p + -n junctions * with depth x j < 1000 Å using light B ions Classical solution: Replace B by BF
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Lecture_7_2_Ionimplantation - Lecture 7.2 Ion Implantation...

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