Lecture_8_1_LPCVD

Lecture_8_1_LPCVD - Lecture 8.1 CVD of polysilicon and...

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CVD of polysilicon and dielectric thin films Lecture 8.1
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IH2655 SPRING 2009 Mikael Östling KTH Basic definitions Reactor designs Polysilicon Silicon oxide Silicon nitride Modeling Basic definitions Reactor designs Polysilicon Silicon oxide Silicon nitride Modeling Polysilicon and deposited oxides in a conventional NMOSFET: (Fig. 9.1 Sze) CVD of polysilicon and dielectric thin films
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IH2655 SPRING 2009 Mikael Östling KTH Chemical vapor deposition (CVD) Thermal CVD typically between 400-900 ° C : Low-pressure CVD (LPCVD): 0.1- 1 torr Atmospheric-pressure CVD (APCVD) Lower temperature budget by: Plasma-enhanced CVD (PECVD) Photon-induced CVD: Photon generation by UV or laser. Present CVD trends: Rapid Thermal CVD (RTCVD) > 10 torr High-density PECVD (HDPCVD) CVD parameters important for film properties: Reactor design Temperature Pressure
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IH2655 SPRING 2009 Mikael Östling KTH Increased Increased supersaturation temp. Fundamental CVD aspects Thermodynamics and kinetics Transport phenomena Nucleation and thin film growth Effect of supersaturation and temperature on thin film structure:
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IH2655 SPRING 2009 Mikael Östling KTH CVD basic reactor design Hot wall Cold wall Trend is from hot-wall batch reactors to cold-wall single-wafer tools
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IH2655 SPRING 2009 Mikael Östling KTH Thermal CVD LPCVD hot-wall. Most common in production. Both horizontal and vertical deisgn. APCVD. Not very common today. (Fig. 6.1 VLSI Techn. p. 236)
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IH2655 SPRING 2009 Mikael Östling KTH PECVD Parallel-plate: Common in production Hot-wall: Not very common today (Fig. 6.2 VLSI Techn. p. 237)
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IH2655 SPRING 2009 Mikael Östling KTH Characteristics of various CVD processes (Table 1. ULSI Technology p. 211)
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IH2655 SPRING 2009 Mikael Östling KTH The LPCVD workhorse system for Si 3 N 4 , silicon oxide and polysilicon
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Lecture_8_1_LPCVD - Lecture 8.1 CVD of polysilicon and...

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