# hw03 - ECE 315 Homework 3 Due in the drop box 1(P-N...

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ECE 315 Homework 3 Due 2/13/2009 in the drop box 1. (P-N junction, continued from Prob. 7 of HW 2. Please follow the numbers there. ) For a p-n junction well described by the depletion region approximation as shown below, assume the electron mobility μ n =1000cm 2 /Vs, the hole mobility μ p =400cm 2 /Vs, and the minority lifetime τ n = τ p =10 -7 s (a) In equilibrium, which region(s) satisfy the charge neutrality condition? Explain briefly. (4 pts) (b) In equilibrium, which region(s) satisfy the relation of np=n i 2 ? Explain briefly. (4 pts) (c) At V D =0, Calculate the depletion capacitance in F/cm 2 . (4 pts) (d) Estimate the ideal saturation current I S at 300K and 400K. You can use the n i values from Problem 2 of Homework 2. Assume A = 1cm 2 . (4 pts) 2. (Generation and carrier concentrations in the depletion region) For the p-n junction in Prob. 1, the voltage across the diode is V D and the current is I D . (a) At V D = 0.6V forward bias, what is the minority carrier concentrations at –x p and x n ? (4 pts) (b) At V D = 1.0V reverse bias, what is the minority carrier concentrations at –x p and x n ? (4 pts) (c) Plot the log( n ) and log( p ) throughout the entire device under V D =0V, V D =0.6V and V D = 1.0V in the same plot (for better comparison). (4 pts) (d) Plot J n , J p and J n +J p throughout the entire device under V D =0V, V D =0.6V and V D = 1.0V in separate plots. (4 pts) (e) Under the reverse bias, when the electrons n p in region 2 and the holes p n

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