ECE 3150 Homework 4
Due February 20, 2009
1.
(Bipolar transistor operating regions)
For the following silicon BJT conditions, state the
operating region (notice the voltage convention, e.x.,
V
BE
=

V
EB
)
(a)
NPN with
V
BE
= 0.7V and
V
CE
= 0.0V in commonemitter notation. (2 pts)
(b)
NPN with
V
BE
= 0.9V and
V
CE
= 2.0V in commonemitter notation. (2 pts)
(c)
NPN with
V
BC
= 0.7V and
V
EC
=

2.0V in commoncollector notation. (2 pts)
(d)
NPN with
V
EB
= 0.3V and
V
CB
= 2.0V in commonbase notation. (2 pts)
(e)
PNP with
V
BE
=

0.9V and
V
CE
=

2.0V in commonemitter notation. (2 pts)
(f)
PNP with
V
EB
= 0.9V and
V
CB
=

2.0V in commonbase notation. (2 pts)
2.
(Largesignal and smallsignal BJT models)
For an ideal NPN BJT at 300K,
(a)
Draw the largesignal EbersMoll model with the current gain parameters of
α
F
and
α
R
(pay attention to the direction of the dependent current source) (6 pts)
(b)
If we have designed the BJT with a large current gain by
N
E
>>N
B
>>N
C
and
W
B
<<L
n
,
denote the main current components (in terms of electronhole driftdiffusion
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 Spring '07
 SPENCER
 Microelectronics, Transistor, Volt, pts, Bipolar junction transistor, forward active mode

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