# hw04 - ECE 3150 Homework 4 Due 1(Bipolar transistor...

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ECE 3150 Homework 4 Due February 20, 2009 1. (Bipolar transistor operating regions) For the following silicon BJT conditions, state the operating region (notice the voltage convention, e.x., V BE = - V EB ) (a) NPN with V BE = 0.7V and V CE = 0.0V in common-emitter notation. (2 pts) (b) NPN with V BE = 0.9V and V CE = 2.0V in common-emitter notation. (2 pts) (c) NPN with V BC = 0.7V and V EC = - 2.0V in common-collector notation. (2 pts) (d) NPN with V EB = 0.3V and V CB = 2.0V in common-base notation. (2 pts) (e) PNP with V BE = - 0.9V and V CE = - 2.0V in common-emitter notation. (2 pts) (f) PNP with V EB = 0.9V and V CB = - 2.0V in common-base notation. (2 pts) 2. (Large-signal and small-signal BJT models) For an ideal NPN BJT at 300K, (a) Draw the large-signal Ebers-Moll model with the current gain parameters of α F and α R (pay attention to the direction of the dependent current source) (6 pts) (b) If we have designed the BJT with a large current gain by N E >>N B >>N C and W B <<L n , denote the main current components (in terms of electron-hole drift-diffusion-

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